Ing. Jozef HURAN, CSc.

  • 2018

Perný, M., Šály, V., Janíček, F., Mikolášek, M., Váry, M., and Huran, J.: Electric measurements of PV heterojunction structures a-SiC/c-Si, J. Electr. Engn. 69 (2018) 52-57.

Balalykin, N.I., Huran, J., Nozdrin, M.A., Feshchenko, A.A., Kobzev, A.P., Sasinková, V., Boháček, P., and Arbet, J.: Reactive magnetron sputtering of N-doped carbon thin films on quartz glass for transmission photocathode applications, J. Phys.: Conf. Ser. 992 (2018) 012031.

Balalykin N. I., Aleksandrova, V.S., Gacheva, E.I., Huran, J., Zelenogorskii, V.V., Luchinin, G.A., Minashkin, V.F., Nozdrin, M.A., Poteomkin, A.K., Shirkov, G.D., and Shabratov, V.G.: Start-up of the DC-photoinjector prototype (up to 400 keV) in the transmission photocathode operation mode, Phys. Particles Nuclei Lett. 15 (2018) 886-890.

Huran, J., Boháček, P., Sasinková, V., Kleinová, A., Kobzev, A.P., Kováčová, E., Sekáčová, M., and Arbet, J.: Amorphous silicon carbide films wit wide range of phosphorus concentration: Structural and electrical properties. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. P. 216-219. ISBN 978-80-554-1450-8.

Huran, J., Balalykin, N.I., Nozdrin, M.A., Sasinková, V., Kleinová, A., Kobzev, A.P., Kováčová, E., Laurenčíková, A., and Arbet, J.: Electron emission from N-doped carbon-based very thin films prepared by reactive magnetron sputtering. In Proc. 6th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. P. 13-16. ISBN 978-80-554-1450-8.

Huran, J., Balalykin, N.I., Kováčová, E., Nozdrin, M.A., Sasinková, V., Kleinová, A., Kobzev, A.P., and Laurenčíková, A.: Photo-induced electron emission properties of N-doped carbon-based very thin films. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 65-68. (VEGA 2/0149/17, APVV 04443-12)

  • 2017
Huran, J., Mikolášek, M., Perný, M., Šály, V., Kleinová, A., Sasinková, V., Kobzev, A.P., and Arbet, J.: HWCVD of B-doped silicon carbide thin films for SHJ solar cell technology, J. Integrated Ferroelectr. 184 (2017) 23-31.

Šály, V., Perný, M., Packa, J., Janíček, F., Váry, M., Mikolášek, M., Huran, J., : AC and DC response of heterojunction a-SiC/c-Si for PV application. In: Proc. 18th Inter. Sci Conf. Electric Power Engn. – EPE 2017. Art. No. 7967267.

 

Balalykin, N., Minashkin, V., Nozdrin, M., Shirkov, G., Zelenogorskii, V., Gacheva, E., Poteomkin, A., Huran, J., : Electron gun with a transmission photocathode for the Joint Institute for Nuclear Research photoinjector. Phys. Usp. 60 (10) (2017), also УФН 187 (2017) 1134–1141.

 

Šály, V., Perný, M., Janíček, F., Huran, J., Mikolášek, M., Packa, J., : Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures. J. Phys.: Conf. Ser. 829 (2017) 012019. (VEGA 1/0651/16).

 

Perný, M., Šály, V., Packa, J., Mikolášek, M., Váry, M., Huran, J., Hrubčín, L., Skuratov, V., Arbet, J., :Influnce of exposure with Xe radiation on heterojunction solar cell a-SiC/c-Si studied by impedance spectroscopy. J. Phys.: Conf. Ser. 829 (2017) 012016. (APVV 0443-12). (VEGA 1/0651/16).

 

Huran, J., Boháček, P., Kleinová, A., Sasinková, V., Kobzev, A., Arbet, J., Kováčová, E., Sekáčová, M., : PECVD silicon carbide films for electromagnetic energy absorption in the 0.1-2.0THz frequency range In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 203-206.. (APVV 0443-12). (ITMS 26220220170).

 

Huran, J., Balalykin, N., Boháček, P., Nozdrin, M., Kováčová, E., Kobzev, A., Haščík, Š., Sekáčová, M., Arbet, J., Ryzá, J., : PECVD silicon carbide films on quartz glass as prospective transmission photocathodes In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 150-153.. (APVV 0443-12).

 

Huran, J., Boháček, P., Hrubčín, L., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Kováčová, E., Arbet, J., : PECVD silicon carbide thin films for harsh environment applications In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 215-218.. (APVV 0443-12). (VEGA 1/0651/16). (ITMS 26220220170).

 

  • 2016
Bystritsky, V., Dudkin, G., Krylov, A., Gaži, Š., Huran, J., Nechaev, B., Padalko, V., Sadovsky, A., Tuleushev, Y., Filipowicz, M., Philippov, A., : A method for investigation of the D(4He, ᵧ)6Li reaction in the ultralow energy region under a high background. Nuclear Instr. Methods Phys. Res. A 825 (2016) 24-30.

 

Packa, J., Perný, M., Váry, M., Mikolášek, M., Šály, V., Huran, J., : Accelerated ageing of a-SiC:H/c-Si photovoltaic heterostructures. In: Proc. 17th Inter. Sci Conf. on Electric Power Engn. – EPE 2016. Eds. Z. Müller and M. Müller. IEEE 2016. ISBN 978-1-5090-0907-7. P. 1-5.

 

Mikolášek, M., Harmatha, L., Perný, M., Šály, V., Huran, J., : Development of silicon heterojunction solar cells with IZO and ITO antireflection coatings In: Proc. 6th Inter. Sci Conf. OZE 2016 „Renewable Energy Sources 2016“. Eds. J. Cirák et al. Bratislava: STU 2016. ISBN 978-80-89402-82-3. P. 104-109. (APVV 0443-12).

 

Huran, J., Balalykin, N., Haščík, Š., Feshchenko, A., Kobzev, A., Sasinková, V., Kleinová, A., Arbet, J., : Dry etching of phosphorus doped SiC thin films prepared by PECVD technology for transmission photocathode In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 35-38. (APVV 0443-12).

 

Bystritsky, V., Dudkin, G., Filipowicz, M., Huran, J., Krylov, A., Nechaev, B., Padalko, V., Penkov, F., Philippov, A., Tuleushev, Y., : Effect of pd and dd reactions enhancement in deuterides TiD2, ZrD2 and Ta2D in the astrophysical energy range. Phys. Particles Nuclei Lett. 13 (2016) 79-97.

 

Perný, M., Šály, V., Mikolášek, M., Kujan, V., Váry, M., Huran, J., : Electrical properties of solar heterojunction a-SiC/c-Si irradiated by neutrons In: Proc. 6th Inter. Sci Conf. OZE 2016 „Renewable Energy Sources 2016“. Eds. J. Cirák et al. Bratislava: STU 2016. ISBN 978-80-89402-82-3. P. 151-154. (APVV 0443-12).

 

Burkatovskaya, Y., Bystritsky, V., Dudkin, G., Krylov, A., Lysakov, A., Gaži, Š., Huran, J., Nechaev, B., Padalko, V., Sadovsky, A., Tuleushev, Y., Filipowicz, M., Philippov, A., : Investigation of the reaction D(4He, ᵧ)6Li at ultralow energies. Phys. Particles Nuclei Lett. 13 (2016) 190-197.

 

Balalykin, N., Minashkin, V., Nozdrin, M., Trubnikov, G., Shirkov, G., Gacheva, E., Katin, E., Khazanov, E., Luchinin, G., Poteomkin, A., Zelenogorskii, V., Huran, J., : JINR LHEP photoinjector prototype Phys. Particles Nuclei Lett. 13 (2016) 897-900.

 

Huran, J., Boháček, P., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Hrubčín, L., Arbet, J., Sekáčová, M., : Silicon carbide thin films deposited by PECVD technology for applications in photoelectrochemical water splitting devices In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 215-219. (APVV 0443-12).

 

Perný, M., Váry, M., Šály, V., Mikolášek, M., Huran, J., : The influence of neutrons and Xe-ions flux on c-Si – a-SiC photovoltaic device In 32nd European Photovoltaic Solar Energy Conference and Exhibition – EU PVSEC 2016. Eds. M. Topič et al. Münich: WIP, 2016. P. 260-262. ISBN 3-936338-41-8. ISSN 2196-0992. (APVV 0443-12).

 

Perný, M., Šály, V., Mikolášek, M., Váry, M., Packa, J., Huran, J., : The influence of Xe-Ions irradiation on c-Si/a-SiC photovoltaic device. In: Proc. Diagnostic of Electric. Machines Insulating Systems in Electrical Engn. – DEMISEE 2016. Eds. M. Brandt and M. Váry. IEEE 2016. ISBN: 978-1-5090-1249-7. P. 11-15.

 

Balalykin, N., Huran, J., Nozdrin, M., Feshchenko, A., Kobzev, A., Arbet, J., : Transmission photocathodes based on stainless steel mesh and quartz glass coated with n doped DLC thin films prepared by reactive magnetron sputtering. J. Phys.:Conf. Ser. 700 (2016) 012050.

 

Huran, J., Perný, M., Hrubčín, L., Skuratov, V., Šály, V., Mikolášek, M., Kobzev, A., Arbet, J., : Xe ion irradiation of heterojunction solar cell structures with ITO antireflection film In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 151-154. (APVV 0443-12). (APVV 0321-11).

 

  • 2015
Mikolášek, M., Kováč, J., Huran, J., Perný, M., Šály, V., Harmatha, L., : Analysis of low temperature current-voltage measurements under illumination of silicon heterojunction solar cells In: Proc. 31th Europ. Photovoltaic Solar Energy Conf. and Exhib. – EU PVSEC. Eds. S. Rinck, N. Taylor and P. Helm. Munchen: WIP 2015. ISBN: 3-936338-39-6. P. 817-820. (APVV 0443-12). (VEGA 1/0712/14).

 

Hotový, I., Predanocy, M., Mikolášek, M., Řeháček, V., Spiess, L., Gunschman, S., Schiermeyer, S., Huran, J., : Fabrication and characterization of nickel oxide nanostructures on needle-shaped silicon substrates. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 62-63.. (VEGA 1/1106/12).

 

Kleinová, A., Huran, J., Sasinková, V., Perný, M., Šály, V., Packa, J., : FTIR spectroscopy of silicon carbide thin films prepared by PECVD technology for solar cell application,. Proc. SPIE 9563 (2015) 95630U. (APVV 0443-12). (VEGA 2/0062/13). (VEGA 2/0175/13). (VEGA 2/0173/13).

 

Perný, M., Šály, V., Huran, J., Mikolášek, M., Váry, M., : Heterojunction a-SiC:H/c-Si solar cells structures and their electrical characterization In: Proc. 31th Europ. Photovoltaic Solar Energy Conf. and Exhib. – EU PVSEC. Eds. S. Rinck, N. Taylor and P. Helm. Munchen: WIP 2015. ISBN: 3-936338-39-6. P. 683-687. (APVV 0443-12). (KCMTE).

 

Huran, J., Mikolášek, M., Boháček, P., Kleinová, A., Sasinková, V., Kobzev, A., Sekáčová, M., Arbet, J., : HWCD technology of silicon carbide thin films: properties In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 104-107. (APVV 0443-12). (APVV 0321-11). (VEGA 2/0062/13). (VEGA 2/0175/13). (VEGA 2/0173/13).

 

Huran, J., Boháček, P., Kučera, M., Kleinová, A., Sasinková, V., : Plasma deposition of amorphous silicon carbide thin films irradiated with neutrons,. Bull. American Phys. Soc 60 (2015) IW.00005.. (APVV 0443-12).

 

Huran, J., Boháček, P., Kobzev, A., Kleinová, A., Sasinková, V., Sekáčová, M., Arbet, J., : Plasma-enhanced chemical vapour deposition of B-doped silicon carbide thin films for heterojunction application. In: 22nd Inter. Symp. on Plasma Chemistry. Antwerpy 2015. Proc. Extend. Abstracts P-III-6-22. (APVV 0443-12). (VEGA 2/0062/13). (VEGA 2/0175/13). (VEGA 2/0173/13).

 

Sasinková, V., Huran, J., Kleinová, A., Boháček, P., Arbet, J., Sekáčová, M., : Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment,. Proc. SPIE 9563 (2015) 95630V. (APVV 0443-12). (VEGA 2/0062/13). (VEGA 2/0175/13). (VEGA 2/0173/13).

 

Perný, M., Šály, V., Mikolášek, M., Váry, M., Huran, J., : Solar cell heterojunction a-SiC:H/c-Si structure under dark and illumination.. In: Proc. 16th Inter. Sci Conf. on Electric Power Engn. (EPE). Eds. S. Rusek and R. Gono. Ostrava: VSB-TU 2015. ISBN: 978-1-4673-6788-2. P. 672-675. (APVV 0443-12).

 

Bystritsky, V., Gaži, Š., Huran, J., Dudkin, G., Krylov, A., Lysakov, A., Nechaev, B., Padalko, V., Sadovsky, A., Filipowicz, M., Philippov, A., : Studying the D(p, ᵧ)3He reaction in zirconium deuteride within the proton energy range of 9-35 keV. Phys. Particles Nuclei Lett. 12 (2015) 550-558.

 

Huran, J., Hrubčín, L., Boháček, P., Borzakov, S., Skuratov, V., Kobzev, A., Kleinová, A., Sasinková, V., : The effect of xe ion and neutron irradiation on the properties of SiC and SiC(N) film prepared by PECVD technology In: RAD Proc. Ed. G. Ristič. Niš: RAD Ass. 2015. P. 399-403. (APVV 0443-12). (VEGA 2/0062/13). (VEGA 2/0175/13). (VEGA 2/0173/13).

 

Huran, J., Balalykin, N., Feshchenko, A., Kobzev, A., Sasinková, V., Kleinová, A., Arbet, J., : Transmission photocathodes based on quartz glass coated with N or P-doped SiC thin films prepared by HWCVD technology In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 186-189. (APVV 0443-12).

 

  • 2014
Perný, M., Šály, V., Váry, M., Mikolášek, M., Huran, J., Packa, J., : AC impedance spectroscopy of Al/a-SiC/c-Si(p)/Al heterostructure under illumination. J. Electr. Engn. 65 (2014) 174-178. (APVV 0443-12).

 

Huran, J., Balalykin, N., Feshchenko, A., Kováč, J., Kobzev, A., Arbet, J., : Deuterated diamond like carbon films prepared by reactive magnetron sputtering for transmission photocathode application In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 247-250. (APVV 0443-12).

 

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., : Effect of the crystal structure of a deuterated target on the yield of neutrons in the dd reaction at ultralow energies. JETP Lett. 99 (2014) 497-502.

 

Perný, M., Huran, J., Šály, V., Váry, M., Packa, J., Kobzev, A., : Electrical and structural characterization of carbon based films prepared by RF-PECVD and ECR-PECVD techniques for photovoltaic applications J. Optoelectr. Adv. Mater. 16 (2014) 306-310. (APVV 0443-12).

 

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., : Experimental observation of electron screening for the D( p, ᵧ)3He nuclear reaction in titanium deuteride TiD,. Phys. Particles Nuclei Lett. 11 (2014) 467-472.

 

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., Varlachov, V., : Experimental verification of hypothesis of dd reaction enhancement by channeling of deuterons in titanium deuteride at ultralow energies,. Nuclear Instr. Methods Phys. Res. A 764 (2014) 42-47.

 

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., : First experimental evidence of D(p, ᵧ)3He reaction in deuteride titanium in ultralow collision energy region. Nuclear Instr. Methods Phys. Res. A 753 (2014) 91-96.

 

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., : First experimental evidence of D(p, ᵧ)3He reaction in titanium deuteride in ultralow collision energy region,. J. Experiment. Theoret. Phys. 119 (2014) 54-62.

 

Huran, J., Kleinová, A., Sasinková, V., Kobzev, A., Boháček, P., Sekáčová, M., Arbet, J., : Plasma enhanced chemical vapor deposition of low-k a-SiC:H thin films:FTIR study of chemical bonding In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 168-171. (APVV 0443-12). (APVV 0321-11). (VEGA 2/0062/13). (VEGA 2/0175/13). (VEGA 2/0173/13).

 

Huran, J., Boháček, P., Kulikov, S., Bulavin, M., Sasinková, V., Kleinová, A., Kobzev, A., Sekáčová, M., Arbet, J., : Radiation hardness investigation of PECVD silicon carbide layers for PV applications.. In: 40th IEEE Photovoltaic Specialist Conf. – PVSC. IEEE 2014. ISBN: 978-147994398-2. P. 1815-1820. (APVV 0443-12). (VEGA 2/0062/13). (VEGA 2/0175/13). (VEGA 2/0173/13).

 

Hrubčín, L., Huran, J., Gurov, J., Katulina, S., Rozov, S., Sandukovskij, V., : Silicon detectors for multilayered spectrometers of charged particles Bezpečnost jaderné energie 22 (2014) 87-92.

 

Šály, V., Huran, J., Perný, M., Váry, M., : Study of Al/a-SiC/c-Si(p) Al structures for PV applications. J. Inter. Sci Publ.: Mater., Methods Technol. 8 (2014) 547-556.

 

Váry, M., Huran, J., Perný, M., Mikolášek, M., Šály, V., Packa, J., Kobzev, A., : Study of Al/a-SiC/c-Si(p)/Al structure prepared by PECVD.. In: 40th IEEE Photovoltaic Specialist Conf. – PVSC. IEEE 2014. ISBN: 978-147994398-2. P. 1879-1883. (APVV 0443-12).

 

Bystritsky, V., Kobzev, A., Krylov, A., Parzhitskii, S., Philippov, A., Dudkin, G., Nechaev, B., Padalko, V., Penkov, F., Tuleushev, Y., Filipowicz, M., Bystritsky, V., Gaži, Š., Huran, J., : Study of the d(p, ᵧ)3He reaction at ultralow energies using a zirconium deuteride target,. Nuclear Instr. Methods Phys. Res. A 737 (2014) 248-252.

 

Huran, J., Balalykin, N., Feshchenko, A., Kobzev, A., Kleinová, A., Sasinková, V., Hrubčín, L., : Transmission photocathodes based on stainless steel mesh coated with deuterated diamond like carbon films. Nuclear Instr. Methods Phys. Res. A 753 (2014) 14-18. (APVV 0443-12).

 

  • 2013
Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Sasinková, V., Balalykin, N., Sekáčová, M., Arbet, J., : Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.. (APVV 0713-07). (APVV 0321-11). (VEGA 2/0062/13). (VEGA 2/0175/13). (VEGA 2/0173/13).

 

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Sasinková, V., Balalykin, N., Sekáčová, M., Arbet, J., : Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications.. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.

 

Perný, M., Mikolášek, M., Šály, V., Ružinský, M., Ďurman, V., Pavúk, M., Huran, J., Országh, J., Matejčík, Š., : Behaviour of amorphous silicon carbide in Au/a-SiC/Si heterostructures prepared by PECVD technology using two different RF modes,. Applied Surface Sci 267 (2013) 143-147. (APVV 0713-07).

 

Perný, M., Mikolášek, M., Šály, V., Packa, J., Huran, J., : Electric transport mechanisms in heterostructures a-SiC/c-Si for heterojunction solar cells EEA-Electrotehnica, Electronica, Automatica 61 (2013) 15–19.

 

Huran, J., Perný, M., Mikolášek, M., Šály, V., Kobzev, A., Kleinová, A., : Elektrická a štrukturálna charakterizácia heteroštruktúr tenkých vrstiev na báze uhlíka pripravených na kremíku pre fotovoltaické aplikácie, Jemná mechanika a optika 58 (2013) 67-70.

 

Huran, J., Balalykin, N., Hotový, I., Šoltýs, J., Feshchenko, A., Haščík, Š., : GaAs mesh type transmission photocathode prepared by inductively oupled plasma CCl2F2 etching of GaAs substrate. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 233-236. (ITMS 26240220041).

 

Bystritsky, V., Kobzev, A., Krylov, A., Parzhitskii, S., Philippov, A., Dudkin, G., Nechaev, B., Padalko, V., Penkov, F., Tuleushev, Y., Filipowicz, M., Bystritsky, V., Gaži, Š., Huran, J., : Measuring the astrophysical S factor and the cross sections of the p(d, ᵧ)3He reaction in the ultralow energy region using a zirconium deuteride target. Phys. Particles Nuclei Lett. 10 (2013) 717-722.

 

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Borzakov, S., Hrubčín, L., Sekáčová, M., Balalykin, N., : Neutron-irradation effect on the electrical chracteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology. Phys. Status Solidi a 210 (2013) 2756-2761. (APVV 0713-07). (VEGA 2/0192/10). (VEGA 2/0153/10). (VEGA 2/0144/10).

 

Huran, J., Balalykin, N., Feshchenko, A., Boháček, P., Kobzev, A., Sasinková, V., Kleinová, A., Zaťko, B., :Plasma enhanced chemical vapor deposition of deuterated diamond like carbon films for photocathode application. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.. (APVV 0713-07). (APVV 0321-11). (VEGA 2/0175/13).

 

Huran, J., Kováč, J., Boháček, P., Kováč, J., Kleinová, A., Mikolášek, M., Sekáčová, M., : Spectral response study of Schottky photodetectors based on nanocrystalline silicon carbide thin films prepared by PECVD technology at different conditions. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 93-96. (APVV 0713-07). (APVV 0321-11).

 

Huran, J., Valovič, A., Boháček, P., Shvetsov, V., Kobzev, A., Borzakov, S., Kleinová, A., Sekáčová, M., Arbet, J., Sasinková, V., : The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition,. Applied Surface Sci 267 (2013) 88-91. (APVV 0713-07). (VEGA 2/0192/10). (VEGA 2/0144/10).

 

Perný, M., Mikolášek, M., Šály, V., Packa, J., Huran, J., : Vlastnosti heteroštruktúr Au/a-SiC/c-Si/Al pripravených metódou PECVD dopovaných dusíkom Jemná mechanika a optika (2013) 269-271.

 

  • 2012
Perný, M., Mikolášek, M., Šály, V., Huran, J., Országh, J., : Current transport mechanisms of amorphous n–doped silicon carbide/crystalline silicon heterostructure: impact of nitrogen dopation. In: 35th ISSE. Eds. M.Franz et al. Piscataway: IEEE 2012. ISBN 978-1-4673-2240-9. P. 25-30.

 

Huran, J., Kučera, M., Boháček, P., Kobzev, A., Kleinová, A., Sekáčová, M., Kováčová, E., : Electron cyclotron resonance plasma technology of silicon carbon nitride thin films. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 267-270.

 

Huran, J., Valovič, A., Kučera, M., Kleinová, A., Kováčová, E., Boháček, P., Sekáčová, M., : Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties. J. Electr. Engn. 65 (2012) 333-335. (CENTE II). (APVV 0713-07). (VEGA 2/0192/10).

 

Perný, M., Šály, V., Mikolášek, M., Huran, J., : Characterization and electrical transport in a-SiC/c-Si heterojunction structure. EEA-Electrotehnica, Electronica, Automatica 60 (2012) 38 – 42.

 

Huran, J., Balalykin, N., Shirkov, G., Boháček, P., Kobzev, A., Valovič, A., Malinovsky, L., Sekáčová, M., :Characterization of nanocrystalline diamond/amorphous composite carbon films prepared by PECVD technology. Phys. Procedia 32 (2012) 875-879. (APVV 0713-07). (APVV 51-0459-06). (VEGA 2/0192/10).

 

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., :Investigation of temperature dependence of neutron yield and electron screening potentials for d(d,n)3He reaction proceeding in deuterides ZrD2 and TiD2. Phys. Atomic Nuclei 75 (2012) 913-922.

 

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., :Measurement of astrophysical S factors and electron screening potentials for d(d,n)3He reaction in ZrD2, TiD2, D2D, and CD2 targets in the ultralow energy region using plasma accelerators. Phys. Atomic Nuclei 75 (2012) 53-62.

 

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., :Measurement of astrophysical S-factors and electron screening potentials for View the MathML source reaction in ZrD2, TiD2 and TaD0.5 targets in the ultralow energy region using plasma accelerator. Nuclear Phys. A 889 (2012) 93-104.

 

Huran, J., Kadlečíková, M., Zaťko, B., Feschenko, A., Kobzev, A., Vančo, L., Nozdrin, M., Kleinová, A., Kováčová, E., : Photocathodes based on diamond like carbon films prepared by reactive magnetron sputtering and PECVD technology. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 263-266.

 

Huran, J., Valovič, A., Kobzev, A., Balalykin, N., Kučera, M., Haščík, Š., Malinovsky, L., Kováčová, E., :Stuctural and physical characteristics of PECVD nanocrystalline silicon carbide thin films. Phys. Procedia 32 (2012) 303-307. (APVV 0713-07). (VEGA 2/0192/10).

 

  • 2011
Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., and Ryc, L. : Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics. Nuclear Instr. Methods Phys. Res. A 633 (2011) S131-S133. (VEGA 2/0192/10).

 

Perný, M., Šály, V., Huran, J., : Electric and dielectric properties of amorphous silicon carbide thin films produced at high temperature. In: Proc. 26th Europ. Photovoltaic Solar Energy Conf. Eds. H. Ossenbrink et al. München: WIP 2011. ISBN 3-936338-27-2. P. 317-320.

 

Perný, M., Šály, V., Váry, M., Huran, J., : Electrical and structural properties of amorphous silicon carbide and its application for photovoltaic heterostructures, Elektroenergetika 4 (2011) 17-19.

 

Perný, M., Šály, V., Váry, M., Huran, J., : Electrical structural properties of amorphous nitride-doped silicon carbide and its application for photovoltaics. In: 2nd Inter. Conf. Renewable Energy Sources. Eds. J. Cirák et al. Bratislava: STU 2011. ISBN 978-80-89402-38-0. P. 208-209.

 

Perný, M., Šály, V., Mikolášek, M., Huran, J., Országh, J., : Electronic and structural properties of amorphous N-doped silicone carbide. In: 34th ISSE. Eds. M.Franz et al. Piscataway: IEEE 2011. ISBN: 978-1-4577-2112-0. P. 212-215.

 

Nozdrin, M., Balalykin, N., Feschenko, A., Minashkin, V., Shirkov, G., Trubnikov, G., Gaži, Š., Huran, J., : Hollow photocathode prototype for e-gun. In: 10th Europ. Workshop on Beam Diagnostics and Instrument. for Particle Accelerators (DIPAC2011). Eds. M. Marx et al. Hamburg 2011. P. 242-244.

 

Huran, J., Balalykin, N., Shirkov, G., Kobzev, A., Valovič, A., : Nanocrystalline diamond/amorphous composite carbon films prepared by plasma chemical vapor deposition Acta Technica 56 (2011) T278-T283.(APVV 0713-07).

 

Valovič, A., Huran, J., Kobzev, A., Balalykin, N., Kučera, M., Haščík, Š., : Nanocrystalline silicon carbide thin films prepared by plasma enhanced chemical vapor deposition Acta Technica 56 (2011) T291-T298. (APVV 0713-07).

 

Valovič, A., Huran, J., Kučera, M., Kobzev, A., Gaži, Š., : Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology. European Phys. J. Applied Phys. 56 (2011) 24013.

 

Huran, J., Zaťko, B., Boháček, P., Shvetsov, V., Kobzev, A., : Study of wide band gap nanocrystalline silicon carbide films for radiation imaging detectors. Nuclear Instr. Methods Phys. Res. A 633 (2011) S75-S77.(APVV 0713-07).

 

Boháček, P., Dubecký, F., Zaťko, B., Sekáčová, M., Huran, J., Nečas, V., Mudroň, J., : Technology and performance study of a two-line monolithic X- and \gamma -ray detection chip Based on Semi-Insulating GaAs. IEEE Trans. Nuclear Sci 58 (2011) 3354-3358.

 

  • 2010
Huran, J., Shindov, P., Šmatko, V., Valovič, A., Kobzev, A., : Electrical and optical characterization of PECVD silicon carbon nitride thin films, Annual J. Electr. 4 (2010) 94.

 

Perný, M., Šály, V., Huran, J., : Elektrické vlastnosti nanokryštalického SiC tvoriaceho súčasť štruktúry MSM, Energetika 60 (2010) 654-657.

 

Perný, M., Šály, V., Huran, J., : Material properties of SiC and its application for photovoltaic devices. In: DISEE 2010. Ed. M. Váry. Bratislava: STU 2010. ISBN: 978-80-227-3366-3. P. 182-185.

 

Boháček, P., Huran, J., Valovič, A., Kobzev, A., Shvetsov, V., Kučera, M., Malinovsky, L., : N-doped nanocrystalline silicon carbide films prepared by PECVD technology. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 81-84.

 

Huran, J., Balalykin, N., Shirkov, G., Boháček, P., Kobzev, A., Valovič, A., : Nanocrystalline diamond/amorphous composite carbon films prepared by PECVD technology for photocathode application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 77-80.

 

Boháček, P., Dubecký, F., Zaťko, B., Sekáčová, M., Huran, J., Šalát, T., Nečas, V., Mudroň, J., : Performance study of 2×64 pixel two-line monolithic x-ray detection chip on semi-insulating GaAs. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 244-247.

 

Huran, J., Zaťko, B., Boháček, P., Kobzev, A., Vincze, A., Malinovsky, L., Valovič, A., : Properties of hydrogenated amorphous/nanocrystalline carbon films prepared by plasma enhanced chemical vapour deposition. IoP Conf. Series: Mater. Sci Engn. 12 (2010) 012005. (APVV 0713-07). (APVV 51-0459-06). (VEGA 1/3095/27). (VEGA 2/7170/27).

 

  • 2009
Dubecký, F., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Huran, J., : A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics. Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 132-134. (VEGA 2/7170/27).

 

Kobzev, A., Huran, J., Maczka, D., Turek, M., : Investigation of light element contents in subsurface layers of silicon. Vacuum 83 (2009) S124-S126.

 

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., : Spectrometric performance study of semi-insulating GaAs radiation detector at reduced temperatures. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 231-234.

 

  • 2008
Huran, J., Kobzev, A., Balalykin, N., Petzold, J., : Hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 127-130.

 

Boháček, P., Huran, J., Kobzev, A., Balalykin, N., Petzold, J., : PECVD silicon carbon nitrid thin films: properties. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 291-294.

 

Dubecký, F., Ryć, L., Kaczmarczyk, J., Scholz, M., Zaťko, B., Boháček, P., Huran, J., Ladzianský, M., : Registration of fast netrons emission from hot plasmas by bulk semi-insulating GaAs detectors. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 299-302.

 

Boháček, P., Zaťko, B., Dubecký, F., Chromik, Š., Huran, J., Sekáčová, M., : Role of new ohmic electrode metallization in detection performance of bulk semi-insulating GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 591 (2008) 105-108. (APVV 51-0459-06). (VEGA 2/7170/27).

 

  • 2007
Hotový, I., Huran, J., Spiess, L., Romanus, H., Capone, S., Řeháček, V., Taurino, A., Donoval, D., Siciliano, P., : Au-NiO nanocrystalline thin films for sensor application. J. Phys. Conf. Ser. 61 (2007) 435-439.

 

Huran, J., Hotový, I., Balalykin, N., Starikov, A., : Physical and bonding characteristics of N-doped hydrogenated amorphous silicon carbide films grown by PECVD and annealed by pulsed electron beam J. Phys.: Conf. Ser. 61 (2007) 430-431.

 

Huran, J., Hotový, I., Petzold, J., Balalykin, N., Kobzev, A., : Wide band gap amorphous silicon carbide films deposited by PECVD. In: Light Sources 2007. Ed. Liu, M.Q. Shanghai: 2007. ISBN 978-0-9555445-0-7. P. 61-62.

 

  • 2006
Huran, J., Hotový, I., Petzold, J., Balalykin, N., Kobzev, A., : Effect of deposition temperature on the properties of amorphous silicon carbide thin films. Thin Solid Films 515 (2006) 651-653.

 

Šagátová-Perďochová, A., Dubecký, F., Nečas, V., Haščík, Š., Sekáčová, M., Huran, J., : Investigation of etched trenches in technology of LEG semi-insulating GaAs monolithic linear detector array. Nuclear Physics B – Proc. Suppl. 150 (2006) 194-199.

 

Chromik, Š., Huran, J., Štrbik, V., Španková, M., Vávra, I., Bohne, W., Rohrich, J., Strub, E., Kováč, P., Stanček, S., : Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by an in situ method. Supercond. Sci Technol. 19 (2006) 577-580.

 

Hotový, I., Donoval, D., Huran, J., Haščík, Š., Spiess, L., Gubisch, M., Capone, S., : NiO nanostructured films with Pt coating prepared by magnetron sputtering Czechoslov. J. Phys. B 56 (2006) S1192-S1198.

 

Hotový, I., Huran, J., Spiess, L., Romanus, H., Búc, D., Kosiba, R., : NiO-based nanostructured thin films with Pt surface modification for gas detection. Thin Solid Films 515 (2006) 658-661.

 

Huran, J., Zaťko, B., Hotový, I., Petzold, J., Kobzev, A., Balalykin, N., : PECVD silicon carbide deposited at different temperatures Czechoslov. J. Phys. B 56 (2006) S1207-S1211.

 

Huran, J., Hotový, I., Petzold, J., Balalykin, N., Kobzev, A., : RF plasma deposition of thin amorphous silicon carbide films using a combination of silan and methane. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 59-62.

 

  • 2005
Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., Huran, J., : Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images. Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

 

Hotový, I., Huran, J., McPhail, D., Řeháček, V., : Enhanced magnetron sputtering deposition of NiO by gas flow modulation. In: ISPC 17. Eds. J. Mostaghimi et al. Toronto: Univ. Toronto Press Inc. 2005. P. 570-571.

 

Hotový, I., Huran, J., Spiess, L., Gubisch, M., Romanus, H., Schawohl, J., : Hydrogen microsensors based on NiO modified thin film. In: 50. Inter. Wissenschaft. Kolloquium. Ilmenau: TU 2005. P. 193-194.

 

Huran, J., Hotový, I., Balalykin, N., : Plasma enhanced chemical vapour deposited amorphous silicon carbide films. In: ISPC 17. Eds. J. Mostaghimi et al. Toronto: Univ. Toronto Press Inc. 2005. P. 528-529.

 

Dubecký, F., Zaťko, B., Gombia, E., Sekáčová, M., Boháček, P., Huran, J., : Recent progress in development of monolithic strip line X-ray detectors based on semi-insulating InP. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 157-160.

 

  • 2004
Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Šagátová-Perďochová, A., Sekáčová, M., Boháček, P., Hudec, M., Huran, J., : Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 314-320.

 

Hotový, I., Huran, J., Siciliano, P., Capone, S., Spiess, L., Řeháček, V., : Enhancement of H2 sensing properties of NiO-based thin films with a Pt surface modification. Sensors & Actuators B 103 (2004) 300-311.

 

Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : Further studies of N doped a-SiC:H films deposited by PECVD and annealed by pulse electron beam. Thin Solid Films 459 (2004) 149-151.

 

Hotový, I., Huran, J., Spiess, L., : Characterization of sputtered NiO films using XRD and AFM. J. Materials Sci 39 (2004) 2609-2612.

 

Huran, J., Hotový, I., Dubecký, F., Balalykin, N., : N-doped a-SiC:H films deposited by PECVD annealed by pulse electron beam. In: SIMC-XIII-2004. Ed. Wang, Z. et al. Piscataway: IEEE, 2004. P. 93-97.

 

Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : New results of low temperature PECVD amorphous silicon carbide. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 123-126.

 

Hotový, I., Huran, J., Spiess, L., Gubisch, M., Schawohl, J., : NiO modified thin films for gas monitoring. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 303-306.

 

Zaťko, B., Dubecký, F., Boháček, P., Gombia, E., Frigeri, P., Mosca, R., Franchi, S., Huran, J., Nečas, V., Sekáčová, M., Förster, A., Kordoš, P., : On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 111-120.

 

Dubecký, F., Ščepko, P., Nečas, V., Zaťko, B., Sekerka, V., Sekáčová, M., Hudec, M., Huran, J., : Quantum digital x-ray scanner based on SI GaAs detectors: overal description and first imaging results. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 46-51.

 

Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : RBS study of amorphous silicon carbide films deposited by PECVD Czechosl. J. Phys. 54 (2004) Suppl. C C1006-C1010.

 

Dubecký, F., Boháček, P., Zaťko, B., Sekáčová, M., Huran, J., Šmatko, V., Fornari, R., Gombia, E., Mosca, R., Pelfer, P., : Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 181-191.

 

Hotový, I., Huran, J., McPhail, D., : Study of enhanced magnetron sputtering process of NiO by using flow modulation of oxygen Czechosl. J. Phys. 54 (2004) Suppl. C C976-C983.

 

  • 2003
Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : Low temperature plasma deposition of N-doped a-SiC:H films and annealed by pulsed electron beam. In: Proc. 16th Int. Symposium on Plasma Chemistry. Taormina 2003. P. 401.

 

Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Boháček, P., Šagátová-Perďochová, A., Hudec, M., Sekáčová, M., Huran, J., : Modular X-ray scanner based on GaAs detectors: status of development. In: APCOM 2003. Eds.: P. Bury et al. Žilina: FEE ŽU, 2003. ISBN: 80-8070-088-5. P. 115-119.

 

  • 2002
Boháček, P., Korytár, D., Ferrari, C., Dubecký, F., Surma, B., Zaťko, B., Šmatko, V., Huran, J., Fornari, R., Sekáčová, M., Strzelecka, S., : Correlation of crystal defects and galvanomagnetic parameters of semi-insulating InP with performance of radiation detectors fabricated from characterised materials. Materials Sci Engn. B 91-92 (2002) 516-520.

 

Dubecký, F., Zaťko, B., Nečas, V., Ščepko, P., Gajtanská, M., Sekáčová, M., Šagátová-Perďochová, A., Sekerka, V., Huran, J., Boháček, P., Hudec, M., : Development and performance of imaging radiation detector based on semi-insulating GaAs: Application in γ-ray computer tomograph for industrial purposes. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 258.

 

Huran, J., Hotový, I., Stano, J., Kobzev, A., Balalykin, N., : Effects of pulsed electron beam annealing on radiation damage in n-doped a-SiC:H films deposited by PECVD Solid State Phenomena 82-84 (2002) 529-532.

 

Morvic, M., Boháček, P., Betko, J., Dubecký, F., Huran, J., Sekáčová, M., : Electrical properties of semi-insulating GaAs irradiated with neutrons. Nuclear Instr. Methods in Phys. Res. B 197 (2002) 240-246.

 

Boháček, P., Morvic, M., Betko, J., Dubecký, F., Huran, J., : Electrical properties of semi-insulating GaAs irradiated with neutrons. In: SIMC-XII-2002. Eds.: J. Breza et al. Piscataway: IEEE 2002. P. 31.

 

Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : Influence of nitrogen concentration on conductivity of N-doped a-SiC:H films deposited by PECVD. Vacuum 67 (2002) 567-570.
Hotový, I., Huran, J., Siciliano, P., Capone, S., Spiess, L., Kremmer, J., : NiO thin films for NO2 and CO detection. In: EUROSENSORS XVI. Praha: 2002. P. 176-179.

 

Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : PECVD nitrogen doped a-SiC:H films: properties. In: ASDAM ’02. Ed. J. Breza and D. Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 67.

 

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Huran, J., Boháček, P., Ferrari, C., Kordoš, P., Förster, A., : Role of minority carrier extraction in performance of radiation detectors based on semi-insulating GaAs. In: ASDAM ’02. Ed. J. Breza and D. Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 145.

 

Hotový, I., Huran, J., Spiess, L., Liday, J., Sitter, H., Haščík, Š., : The influence of process parameters and annealing temperature on the physical properties of sputtered NiO thin films. Vacuum 69 (2002) 237-242.

 

  • 2001
Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : Some characteristics of n doped a-SiC: H films deposited by PE CVD. In: Diamond Films and Films of Related Materials. Eds. V.I.Lapshin et al. Charkov: NAS Ukraine 2001. P. 116-118.

 

Hotový, I., Huran, J., Siciliano, P., Capone, S., Spiess, L., Řeháček, V., : The influences of preparation parameters on NiO thin film properties for gas-sensing application. Sensors & Actuators B 78 (2001) 126-132.

 

  • 2000
Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : Further studies of N doped a-SiC:H films deposited by PECVD. In: Sensors and Microsystems. Singapore: World Sci, 2000. P. 355-360.

 

Hotový, I., Čapkovic, R., Huran, J., Siciliano, P., Rella, R., Spiess, L., : Characterization of NiO thin films for gas sensor. In: Sensors and Microsystems. Singapore: World Sci, 2000. P. 180-185.

 

Huran, J., Hotový, I., Haščík, Š., Kobzev, A., Balalykin, N., : Investigation of radiation damage in N doped a-SiC : H films annealed by pulsed electron beam. Vacuum 58 (2000) 428-433.

 

Hotový, I., Huran, J., Siciliano, P., Capone, S., Spiess, L., Řeháček, V., : Nickel oxide thin films as gas sensors. In: EUROSENSORS XIV. Copenhagen: MC 2000. P. 163-166.

 

Korytár, D., Ferrari, C., Surma, B., Strzelecka, S., Dubecký, F., Huran, J., Fornari, R., Pekárek, L., Procházková, O., Šmatko, V., Hruban, A., : On physical parameters and crystal defects of bulk semi-insulating InP for radiation detector fabrication. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 183-186.

 

Dubecký, F., Huran, J., Darmo, J., Zaťko, B., Krempasky, M., Boháček, P., Sekáčová, M., Bešše, I., Nečas, V., Hotový, I., Fornari, R., Gombia, E., Pelfer, P., : Performance of radiation detectors based on semiinsulating GaAs and InP. In: Sensors Microsystems. Singapore: World Sci 2000. P. 437-441.

 

Hotový, I., Huran, J., Spiess, L., Siciliano, P., Rella, R., Řeháček, V., : Physical and structural characterization of NiO thin films for gas detection. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 331-334.

 

Hotový, I., Huran, J., Spiess, L., Čapkovic, R., Haščík, Š., : Preparation and characterization of NiO thin films for gas sensor applications. Vacuum 58 (2000) 300-307.

 

Huran, J., Hotový, I., Kobzev, A., Balalykin, N., Stano, J., Spiess, L., : RBS study of amorphous silicon carbide films annealed by pulse electron beam. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 311-314.

 

Boháček, P., Morvic, M., Betko, J., Dubecký, F., Huran, J., : Study of semi-insulating GaAs irradiated with neutrons using conductivity, Hall effect, and magnetoresistance measurement. In: APCOM 2000. Eds. J.Mudroň et al. Liptovský Mikuláš: Military Academy 2000. P. 129.

 

  • 1999
Hotový, I., Huran, J., Haščík, Š., Srnánek, R., : Characterization of magnetron sputtering process of nickel oxide by using flow modulation of oxygen . In: Proc. 14th Int. Symp. Plasma Chemistry. Vol. III. Prague: IPP AS CR 1999. P. 1579.

 

Hotový, I., Huran, J., Spiess, L., Haščík, Š., Řeháček, V., : Preparation of nickel oxide films for gas sensors applications Sensors Actuators B 57 (1999) 147-152.

 

Wurmus, H., Vaněk, O., Hotový, I., Huran, J., Řeháček, V., Hrkút, P., : Sensing of micrograppers. In: 44. Inter. Wissenschaft. Kolloquium. Ilmenau: TU 1999. P. 300.

 

Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : Some characteristics of A doped a-SiC:H films deposited by PE CVD. In: Proc. 14th Int. Symp. Plasma Chemistry. Vol. III. Prague: IPP AS CR 1999. P. 2878.

 

  • 1998
Hotový, I., Huran, J., Janík, J., Kobzev, A., : Deposition and properties of nickel oxide films produced by DC reactive magnetron sputtering Vacuum 50 (1998) 157.

 

Hotový, I., Huran, J., Breternitz, V., Spiess, L., Teichert, G., Schawohl, J., : Effect of oxygen concentration in the sputtering mixture on the properties of dc magnetron sputtered NiO films. In: 43. Inter. Wissenschaft. Kolloquium. Ilmenau: TU 1998. P. 509.

 

Šafránková, J., Huran, J., Hotový, I., Kobzev, A., Korenev, S., : Characterization of nitrogen-doped amorphous silicon carbide thin films Vacuum 51 (1998) 165.

 

Hotový, I., Řeháček, V., Janík, J., Srnánek, R., Huran, J., Haščík, Š., Kubenka, J., Spiess, L., : Nickel oxide films for gas sensor applications. In: NEXUSPAN. Eds. R.Ivanič and V.Tvarožek. Bratislava: STU 1998. P. 87.

 

Hotový, I., Huran, J., Srnánek, R., : Nickel oxide thin films for gas sensor applications. In: EUROSENSORS XII. Ed. N.M.White. Vol. 1. Bristol: IOP Publ, 1998. P. 237-240.

 

Mudroň, J., Müllerová, J., Dubecký, F., Huran, J., : Optical properties of InP:Fe irradiated by fast neutrons. In: ASDAM 98. Eds. J.Breza et al. Piscataway: IEEE 1998. ISBN 0-7803-4909-1. P. 235.

 

Huran, J., Hotový, I., Kobzev, A., : PE CVD SiC thin films modified by pulsed electron and ion beams. In: 43. Inter. Wissenschaft. Kolloquium. Ilmenau: TU 1998. P. 665.

 

Hotový, I., Janík, J., Huran, J., Spiess, L., : Preparation and structural characterisation of nickel oxide films for gas sensor devices. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 175.

 

Huran, J., Šafránková, J., Kobzev, A., : Preparation of hydrogenated amorphous silicon carbide thin films by plasma enhanced chemical vapour deposition Vacuum 50 (1998) 103.

 

Hotový, I., Huran, J., Haščík, Š., Lalinský, T., : Reactively sputtered NbN Schottky contacts on GaAs and their thermal stability Vacuum 50 (1998) 403.

 

Huran, J., Šafránková, J., Hotový, I., Kobzev, A., Korenev, S., : Structural and electrical properties of amorphous nitrogen doped SiC thin films annealed by pulsed electron beam. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 179.

 

Hotový, I., Huran, J., Búc, D., Srnánek, R., : Thermal stability of NbN films deposited on GaAs substrates Vacuum 50 (1998) 45.

 

  • 1997
Huran, J., Hotový, I., Kobzev, A., Šafránková, J., : Characterization of amorphous SiC thin films prepared by PECVD technology. In: Proc. 18th Symp. Plasma Phys. Technol. Ed. J.Píchal. Prague: MFF UK 1997. P. 274.

 

Huran, J., Hotový, I., Šafránková, J., Kobzev, A., : Preparation and properties of amorphous SiC thin films prepared by PECVD technology. In: EUROSENSORS XI. Ed. R.S.Jachowicz. Warsaw: 1997. P. 699.

 

  • 1996
Hromádko, M., Hotový, I., Huran, J., Brčka, J., : Dry etching of InP and GaAs materials for optoelectronic devices. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 319.

 

Huran, J., Hrubčín, L., Kobzev, A., Liday, J., : Properties of amorphous silicon carbide films prepared by PECVDtechnology Vaccum 47 (1996) 1223.

 

Huran, J., Šafránková, J., Kobzev, A., Hotový, I., : Structural and electrical properties of SiC thin films prepared by PECVD technology. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 25.

 

Korenev, S., Huran, J., Kobzev, A., : Surface modification of SiC thin films by pulsed electron and ion beams, IEEE Semicond. and Semi-Insulating Materials Conf. SIMC. (1996) 253-256. (Not IEE SAS).

 

  • 1995
Huran, J., Hotový, I., Hrubčín, L., : Evaluation of hydrogen content in PECVD silicon nitride prepared in multi-freequency plasma deposition system, Acta Phys. Univ. Comenianae 1 (1995) 73.

 

Hotový, I., Brčka, J., Huran, J., : Investigation of reactively sputtered NbN films, Fizika A4 (1995) 337.

 

  • 1994
Hrubčín, L., Huran, J., Šándrik, R., Kobzev, A., Shirokov, D., : Application of the ERD method for hydrogen determination in silicon (oxy)nitride thin films prepared by ECR plasma deposition Nuclear Instrum. Methods in Phys. Research B 85 (1994) 60.

 

Hrubčín, L., Huran, J., Guldan, A., : Bariérové pásikové detektory ionizujúceho žiarenia vyrobené planárnou technológiou, Sensor 1 (1994) 14.

 

Guldan, A., Omastová, M., Huran, J., : Plasma polymerization of chlorbenzene Chemical Papers 48 (1994) 63.

 

Haščík, Š., Horniaková, A., Huran, J., : Silicon trench etching multifrequency discharge reactor Vacuum 45 (1994) 915.

 

  • 1993
Huran, J., Szulényi, F., Hrubčín, L., Turanská, E., : ECR plasma deposition of SiNx and SiNxOx thin films. In: 7th Czecho-Slovak Conf. Thin Films. Ed.: V.Tvarožek. Lipt. Mikuláš: 1993. P. 46.

 

Hrubčín, L., Horniaková, A., Huran, J., : Electrical characteristics of reactive ion etched GaAs Schottky structures. In: Proc. 16th Symp. Plasma Phys. Technol. Praha: CTU 1993. P. 292.

 

Horniaková, A., Huran, J., Haščík, Š., : Etching of GaAs in a multi-frequency discharge reactor Physica Status Solidi A 136 (1993) 93.

 

Huran, J., Szulényi, F., Hrubčín, L., : Physical properties of silicon (oxy) nitride thin films prepared by electron cyclotron resonance (ECR) plasma deposition. In: Proc. 16th Symp. Plasma Phys. Technol. Praha: CTU 1993. P. 283.

 

Hotový, I., Huran, J., : Properties of NbN films prepared by reactive magnetron sputtering Physica Status Solidi A 137 (1993) K25.

 

Horniaková, A., Huran, J., Haščík, Š., : Use of a CCl2F2/H2 plasma plasma for the reactive ion etching of GaAs Vacuum 44 (1993) 123.

 

  • 1992
Huran, J., Horniaková, A., Haščík, Š., : Deep plasma etching of Si in a CBrF 3 plasma through a submicron single layer electron-beam litographic mask Physica Status Solidi A 132 (1992) K81.

 

Guldan, A., Hrubčín, L., Huran, J., : Experimental surface barrier microscopic detector, Elektrotechn. časopis 43 (1992) 126.

 

  • 1991
Haščík, Š., Horniaková, A., Huran, J., : Influence of frequency of rf discharge on reactive ion etching of trench structures, Acta Physica Slovaca 41 (1991) 374.

 

Hrubčín, L., Huran, J., Guldan, A., : Kremíkové bariérové detektory s povrchovou ochranou, Jaderná energie 37 (1991) 409.

 

Szulényi, F., Huran, J., : Physical properties of plasma deposited silicon nitride layers, Acta Physica Slovaca 41 (1991) 5.

 

Handke, R., Haščík, Š., Huran, J., : Plasma etching of deep Si-trencheswith CBrF3 and dilutions Acta Phys. Slovaca 41 (1991) 122.

 

  • 1990
Huran, J., Szulényi, F., Pisarovičová, E., : Properties of silicon nitride films prepared by PE CVD of NH3-SiH4-Ar, NH3-SiH4-He and NH3-SiH4-N2 mictures, Acta Phys. Slovaca 39 (1990) 116.

 

Huran, J., Guldan, A., : Silicon oxide prepared by plasma oxidation of silicon and their application for tunnel MIS diodes, Acta Phys. Slovaca 39 (1990) 108.

 

  • 1989
Hrubčín, L., Huran, J., : Kremíkové bariérové pásikové detektory ionizujúceho žiarenia. In: Senzory a senzor. systémy. Košice: DT ČSVTS 1989. S. 19.

 

Huran, J., Prejda, M., Vlkovič, J., : Radiačná odolnosť MIS štruktúr s dvojvrstvovým dielektrikom. In: Senzory a senzor. systémy. Košice: DT ČSVTS 1989. S. 15.

 

Hrubčín, L., Huran, J., Guldan, A., Vajcík, S., : Senzor síl vyrobený planárnou technológiou. In: Senzory a senzor. systémy. Košice: DT ČSVTS 1989. S. 280.

 

Huran, J., Szulényi, F., Lalinský, T., Liday, J., Fapšo, L., : The silicon nitride layers prepared by PE CVD for GaAs IC technology. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 161.

 

  • 1987
Huran, J., Guldan, A., : Príprava veľmi tenkých vrstiev SiO2 v kyslíkovej plazme. In: 6. čs. konf. o tenkých vrstvách 1987. Ed. Z.Hájek. Praha: JČSMF 1987. S. 135.

 

Huran, J., Guldan, A., Hrubčín, L., : Znižovanie rozptylových prúdov povrchových bariérových detektorov ionizujúceho žiarenia povrchovou pasiváciou. In: Senzory a senzorové systémy. Ed. J.Felix. Košice: Dom ČSVTS 1987. S. 58.

 

  • 1985
Guldan, A., Huran, J., Čupcová, L., : Veľmi tenké vrstvy oxidu kremíka pripravené v kyslíkovej plazme, Elektrotechn. časopis 36 (1985) 907.

 

  • 1981
Chromik, Š., Luby, Š., Huran, J., : Príprava a vlastnosti tenkých vrstiev zliatin olova pre Josephsonove priechody. In: 7. konf. čs. fyzikov. Praha: 1981. S. 8.