Ing. Jozef OSVALD, DrSc.

  • 2019

Osvald, J.: Simulation of structure parameters’influence on the threshold voltage of normally-off p-GaN/AlGaN/GaN transistors, Phys. Status Solidi a 216 (2019) 1900453.

Zaťko, B., Hrubčín, L., Boháček, P., Osvald, J., Šagátová, A., Sekáčová, M., Kováčová, E., and Nečas, V.: Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer, AIP Conf. Proc. 2131 (2019) 020054.

Osvald, J.: Threshold voltage dependence of normally-off p-GaN/AlGaN/GaN transistors on structure parameters. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 51-54.

  • 2018
Osvald, J., Lalinský, T., and Vanko, G.: High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes, Applied Surface Sci 461 (2018) 206-211. (VEGA 2/0112/17, APVV 14-0613)

Osvald, J., : Fast and slow traps in Al2O3/(GaN)/AlGaN/GaN heterostructures studied by conductance technique. Physica E 97 (2018) 126-129. (VEGA 2/0112/17).

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280. 

Osvald, J. and Zaťko, B.: Inhomogeneous schottky barrier height in 4h-sic surface barrier detectors. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 208-211. (VEGA 2/0112/17)

Osvald, J.: On the effective barrier height in inhomogeneous Schottky diodes. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 125-128.(VEGA 2/0112/17)

  • 2017
Osvald, J., Lalinský, T., Vanko, G., : Analysis of current transport in gate oxide based (MOS) Schottky diodes on GaN/AlGaN/GaN In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 52-55. (VEGA 2/0112/17). (APVV 14-0613). (CENTE II).

Lalinský, T., Vanko, G., Dobročka, E., Osvald, J., Babchenko, O., Dzuba, J., Veselý, M., Vančo, Ľ., Vogrinčič, P., and Vincze, A.: Ir/Al multilayer gates for high temperature operated AlGaN/GaN HEMTs, Phys. Status Solidi A 214 (2017) 1700691.

Osvald, J., : Interface traps contribution to capacitance of Al2O3/(GaN)AlGaN/GaN heterostructures at low frequencies. Physica E 93 (2017) 238-242. (VEGA 2/0112/17). (APVV 14-0613). (CENTE II).

 

Osvald, J., Vanko, G., Chow, L., Chen, N., Chang, L., : Transition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas. Microelectron. Reliab. 78 (2017) 243–248. (VEGA 2/0112/17). (APVV 14-0613).

 

  • 2016
Osvald, J., : Electrical properties of back-to-back metal/insulator/semiconductor diodes based on AlGaN/GaN heterostructure In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 231-234.

 

Osvald, J., : Properties of AlGaN/GaN varactor with two dimensional electron gas In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 245-248.

 

  • 2015
Osvald, J., : Al2O3/AlGaN/GaN heterostructure interface studied by frequency dependent capacitance technique. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 105-106..

 

Osvald, J., : Back-to-back connected asymmetric Schottky diodes with series resistance as a single diode,. Phys. Status Solidi A 212 (2015) 2754-2758.

 

Osvald, J., : Back-to-back Schottky diodes with one low barrier In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 108-111.

 

Osvald, J., Stoklas, R., Kordoš, P., : Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance. Phys. Status Solidi B 252 (2015) 996-1000.

 

Osvald, J., Stoklas, R., Kordoš, P., : Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps. Mater. Sci in Semicond. Process. 31 (2015) 525-529.

 

  • 2014
Osvald, J., : Frequency dependence of capacitance characteristics of III-N heterostructures In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 136-138.

 

Osvald, J., Vanko, G., Fröhlich, K., : Frequency dependent capacitance of insulator GaN/AlGaN/GaN heterostructure In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 221-224.

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Osvald, J., : Influence of interface deep traps on capacitance of AlGaN/GaN heterojunctions In: Phys. Semicond. Devices. Eds. V.K. Jain, A. Verma. Heidelberg: Springer 2014. ISBN 978-3-319-03002-9. P. 215-217.

 

  • 2013
Kaushal, P., Chand, S., Osvald, J., : Current–voltage characteristics of Schottky diode simulated using semiconductor device equations,. Inter. J. Electron. 100 (2013) 686-698.

 

Osvald, J., : Deep interface traps influence on capacitance characteristics of III-N heterostructures. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 36-39.

 

Osvald, J., : Interface electron traps as a source of anomalous capacitance in AlGaN/GaN heterostructures,. J. Electr. Mater. 42 (2013) 1184-1189.

 

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J., : Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation. Applied Surface Sci 283 (2013) 160-167.

 

Chand, S., Kaushal, P., Osvald, J., : Numerical simulation study of current-voltage characteristic of a Schottky diode with inverse doped surface layer,. Mater. Sci in Semicond. Process. 16 (2013) 454-460.

 

Osvald, J., : Simulation of the influence of interface states on capacitance characteristics of insulator/AlGaN/GaN heterojunctions,. Phys. Status Solidi A 210 (2013) 1340-1344.

 

Osvald, J., : Surface states influence on capacitance properties of dielectric/AlGaN/GaN heterostructures,. Japan. J. Applied Phys. 52 (2013) 08JN09.

 

  • 2012
Chand, S., Kaushal, P., Osvald, J., : Effect of inverse doped surface layer in Schottky barrier modification: a numerical study. J. Electr. Mater. 41 (2012) 3387-3392.

 

Osvald, J., : Interface electron traps and capacitance characteristics of AlGaN/GaN. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 121-124.

 

Osvald, J., : Interface traps in insulator/AlGaN/GaN heterostructure capacitors. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 59-62.

 

  • 2011
Lalinský, T., Vanko, G., Vincze, A., Haščík, Š., Osvald, J., Donoval, D., Tomáška, M., Kostič, I., : Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs. Microelectr. Engn. 88 (2011) 166-169.

 

Osvald, J., : Influence of deep levels on capacitance-voltage characteristics of AlGaN/GaN heterostructures. J. Applied Phys. 110 (2011) 073702.

 

Osvald, J., : Possibility to detect deep levels in AlGaN/GaN heterostructures by C-V measurement. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 147-150.

 

  • 2010
Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., Vincze, A., : C–V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures. Applied Surface Sci 257 (2010) 1254-1256.

 

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., Vincze, A., : C–V characterization of SF6 plasma treated AlGaN/GaN heterostructures. Microelectr. Engn. 87 (2010) 2208-2210.

 

Osvald, J., : Influence of interface states on C-V characteristics of AlGaN/GaN heterostructures. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 167-170.

 

  • 2009
Osvald, J., : Capacitance properties of III-N heterostructures. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 53-53.

 

Osvald, J., : Influence of AlGaN/GaN heterojunction parameters on its capacitance-voltage characteristics. J. Applied Phys. 106 (2009) 013708.

 

Osvald, J., : Temperature dependence of barrier height parameters of inhomogeneous Schottky diodes. Microelectron. Engn. 86 (2009) 117-120.

 

  • 2008
Srnánek, R., Irmer, G., Donoval, D., Osvald, J., McPhail, D., Christoffi, A., Sciana, B., Radziewicz, D., Tlaczala, M., : Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures. Microelectr. J. 39 (2008) 1439-1443.

 

Osvald, J., : Numerical analysis of gate leakage current in AlGaN Schottky diodes. Applied Surface Sci 255 (2008) 793-795.

 

Osvald, J., : Simulation of influence of AlGaN/GaN heterojunction parameters on its capacitance curves. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 319-322.

 

Osvald, J., : Temperature dependence of ideality factor of inhomogeneous Schottky diodes. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 175-178.

 

  • 2007
Osvald, J., : Numerical simultation of tunneling current in GaN Schottky diodes. J. Applied Phys. 101 (2007) 103701.

 

Osvald, J., : Polarization effects and energy band diagram in AlGaN/GaN heterostructures. Applied Phys. A 87 (2007) 679-682.

 

Osvald, J., : Simulation of tunneling current in GaN Schottky diodes. In: APCOM 2007. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 40-43.

 

  • 2006
Osvald, J., : Energy band diagram and charge distribution in AlGaN/GaN heterostructure studied by classical approach. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 83-86.

 

Osvald, J., : Influence of lateral current spreading on the apparent barrier parameters of inhomogeneous Schottky diodes. J. Applied Phys. 99 (2006) 033708.

 

Osvald, J., : Intersecting behaviour of nanoscale Schottky diodes I-V curves. Solid State Comm. 138 (2006) 39-42.

 

Osvald, J., : Series resistance influence on intersecting behaviour of inhomogeneous Schottky diodes I–V curves. Solid-State Electr. 50 (2006) 228-231.

 

  • 2005
Osvald, J., : Electrical properties of inhomogeneous Schottky diodes In: New development in semiconductor research. Ed. T.S.Miller. New York: Nova Sci Publ. 2005. ISBN 1-59454-575-8. P. 113-138.

 

Osvald, J., : Ohmic contacts to moderately doped semiconductors—are they really Ohmic or low-barrier Schottky contacts?. Semicond. Sci Technol. 20 (2005) 611-614.

 

Osvald, J., Kuzmík, J., Konstantinidis, G., Lobotka, P., Georgakilas, A., : Temperature dependence of GaN Schottky diodes I–V characteristics. Microelectronic Engn. 81 (2005) 181-187.

 

  • 2004
Osvald, J., : Comment on “Negative Schottky barrier between titanium and n-type Si(0 0 1) for low-resistance ohmic contacts”. Solid-State Electronics 48 (2004) 2347-2349.

 

Osvald, J., : Electronic properties of a near surface Si δ-doped GaAs under an applied electric field. J. Phys. D: Appl. Phys. 37 (2004) 2655-2659.

 

Osvald, J., : Self-consistent analysis of Si δ-doped layer placed in a non-central position in GaAs structure. Physica E 23 (2004) 147-151.

 

Osvald, J., Horvath, Z., : Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer. Applied Surface Sci 234 (2004) 349-354.

 

  • 2003
Osvald, J., : C-V measurement of a doping profile of δ-doped GaAs and its spatial resolution – numerical study. Acta Physica Slovaca 53 (2003) 129-133.

 

Osvald, J., : New aspects of the temperature dependence of the current in inhomogeneous Schottky diodes. Semicond. Sci Technol. 18 (2003) L24-L26.

 

Osvald, J., : Numerical study of barrier height enhancement in n-In0.35Ga0.65As Schottky diodes using a p-type near-interface layer Physica Stat. Solidi (c) 0 (2003) 928-932.

 

  • 2001
Osvald, J., : C-V curves of Schottky diodes with a near-surface -doped layer. In: MIDEM 2001. Eds. F.Smole et al. Ljubljana: MIDEM 2001. ISBN 961-90001-9-6. P. 155-160.

 

Osvald, J., : Doping concentration dependence of apparent parameters of Schottky diodes with low-barrier defects. Semicond. Sci Technol. 16 (2001) 197-201.

 

Osvald, J., : Schottky diodes with a δ-doped near-surface layer. J. Applied Phys. 90 (2001) 6205-6209.

 

  • 2000
Osvald, J., : Delta-doped layer influence on Schottky diodes parameters. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 391-394.

 

Osvald, J., : Response to “Comment on ‘Numerical study of electrical transport in inhomogeneous Schottky diodes’ ” [J. Appl. Phys. 88, 7366 (2000)]. J. Applied Phys. 88 (2000) 7368-7369.

 

  • 1999
Osvald, J., : Numerical study of electrical transport in inhomogeneous Schottky diodes J. Applied Phys. 85 (1999) 1935-1942.

 

  • 1998
Osvald, J., Burian, E., : C-V dependence of inhomogeneous Schottky diodes Solid State Electron. 42 (1998) 191.

 

Lalinský, T., Breza, J., Vogrinčič, P., Osvald, J., Mozolová, Ž., Šišolák, J., : Iridium-based multilayer contacts to n-GaAs Solid State Electron. 42 (1998) 205.

 

Osvald, J., Burian, E., : Self-consistent analysis of electronic structure of coupled δ-doped layers in GaAs. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 79-82.

 

Osvald, J., : The influence of the pinch-off effect on I-V curves of inhomogeneous Schottky diodes. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 141-144.

 

  • 1996
Osvald, J., Burian, E., : C-V dependencies of inhomogeneous schottky diodes. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 177.

 

Osvald, J., Dobročka, E., : Generalized approach to the parameter extraction from Schttky diodes I.-V. characteristics Semicond. Sci Technol. 11 (1996) 1198-1202.

 

Lalinský, T., Osvald, J., Machajdík, D., Mozolová, Ž., Šišolák, J., Constantinidis, G., Kobzev, A., : High-temperature stable Ir-Al/n-GaAs Schottky diodes: Effect of the barrier height controlling J. Vacuum Sci Technol. 14 (1996) 657.

 

Lalinský, T., Osvald, J., Breza, J., Vogrinčič, P., Mozolová, Ž., Šišolák, J., : Indium-based multilayer contact systems to n-GaAs. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 33.

 

Osvald, J., : Structure of silicide/GaAs interfaces. In: Properties of Gallium Arsenide. 3rd Eds. Ed. M.R.Brozel, G.E.Stillman.EMIS Datarev. No.16. London: IEE 1996. P. 516.

 

  • 1995
Lalinský, T., Osvald, J., Mozolová, Ž., : Ir-Al bimetallic Schottky contact system on GaAs, Fizika A 4 (1995) 431-437.

 

Osvald, J., Hricovini, K., LeLay, L., Aristov, V., : Pb/Si(111)1y1-H Schottky barrier height, Fizika A 4 (1995) 191.

 

Dobročka, E., Osvald, J., : Response to „Comment on Influence of barrier height distribution on the parameters of Schottky diodes“ Applied Phys. Lett. 66 (1995) 3069.

 

  • 1994
Aristov, V., Le Lay, G., Soukiassian, P., Hricovini, K., Bonnet, J., Osvald, J., Olsson, O., : Alkali-metal-induced highest Fermi-level pinning position above semiconductor conduction band minimum Europhys. Lett. 26 (1994) 359.

 

Aristov, V., Le Lay, G., Soukiassian, P., Hricovini, K., Bonnet, J., Osvald, J., Olsson, O., : Cs-induced highest EF jump above InAs(110) conduction-band minimmum J. Vacuum Sci Technol. B 12 (1994) 2709.

 

Dobročka, E., Osvald, J., : Influence of barrier height distribution on the parameters of Schottky diodes Applied Phys. Lett. 65 (1994) 575.

 

Aristov, V., Le Lay, G., Hricovini, K., Taleb-Ibrahimi, A., Dumas, P., Gunther, R., Osvald, J., Indlekofer, G., : Nearly complete tuning of the Fermi level position at a prototypical metal-silicon interface: lead on unpinned Si(111)1×1-H J. Spectroscopy Related Phenomena 68 (1994) 419.

 

LeLay, L., Aristov, V., Hricovini, K., Taleb-Ibrahimi, A., Dumas, P., Osvald, J., Indlekofer, G., : Schottky limit on ideally H-terminated unpinned silicon(111) surfaces. In: Control of Semicond. Interfaces. Ed.: I.Ohdomari. Amsterdam: Elsevier 1994. P. 39.

 

  • 1993
Osvald, J., Lalinský, T., : Barrier height enhancement in WSix/GaAs Schottky diodes by rapid thermal anneali ng J. Mater. Sci 4 (1993) 267.

 

Osvald, J., Lalinský, T., : The influence of rapid thermal annealing on the WSix/GaAs Schottky barrier height. In: 7th Czecho-Slovak Conf. Thin Films. Ed.: V.Tvarožek. Lipt. Mikuláš: 1993. P. 165.

 

Aristov, V., LeLay, L., Hricovini, K., Taleb-Ibrahimi, A., Osvald, J., Dumas, P., Gunther, R., Indlekofer, G., : Tunning the Fermi level position through nearly the whole gap at a non-reactive metal-silcon interface. In: Formation of Semicond. Interfaces. Proc. 4th Int. Conf. Forschungszentrum Jülich. Ed.: B.Lengeler, H. Lüth. Singapore: World Sci. 1993. P. 245.

 

  • 1992
Osvald, J., : On the barrier height inhomogeneities at polycrystalline metal semiconductor contacts Solid State Electr. 35 (1992) 1629.

 

  • 1990
Missous, M., Morgan, D., Wood, J., Grovenor, C., Kendelewicz, T., McGlip, J., Duke, C., Osvald, J., Schwartz, G., Wieder, H., : In: Properites of Gallium Arsenide. 2nd ed. London: INSPEC 1990. P. 383.

 

  • 1989
Osvald, J., Šándrik, R., : Interdifussion between some refractory metal silicides and GaAs Thin Solid Films 169 (1989) 223.

 

Vávra, I., Dérer, J., Osvald, J., Illiťová, G., Wiedermann, M., : Naprašovanie viaczložkových tenkých vrstiev. In: Aktuality technologie a konstrukce polovodičových součástek TESLA. Díl 26. Eds. I. Vávra et al. Ostrava: DT ČSVTS 1989. S. 1.

 

Osvald, J., Dobročka, E., : The influence of postimplantation annealing on stresses in GaAs waters. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 219.

 

Osvald, J., : Vplyv elektronnej litografie na elektrické parametre MOS štruktúr. In: Aktuality technologie a konstrukce polovodičových součástek TESLA. Díl 26. Eds. I. Vávra et al. Ostrava: DT ČSVTS 1989. S. 24.

 

  • 1987
Osvald, J., Pavlenda, P., : Príprava a vlastnosti vrstiev WSi2 pre metalizáciu IO. In: Integrované obvody 87. Velké Karlovice: 1987. S. 100.

 

Osvald, J., Pavlenda, P., : Stabilita vrstiev WSix na GaAs pri vysokých teplotách. In: 6. čs. konf. o tenkých vrstvách 1987. Ed. Z.Hájek. Praha: JČSMF 1987. S. 175.

 

  • 1985
Osvald, J., : Influence of electron lithography on electrical parameters of MOS structures Phys. Status Solidi A 90 (1985) K225.

 

  • 1984
Osvald, J., : Maska pre roentgenovú litografiu. In: Integrované obvody 84. Rožnov p. Radhoštěm: 1984. S. 161.

 

Osvald, J., : Vplyv elektrónovej litografie na elektrické parametre MOS štruktúr. In: Integrované obvody 84. Rožnov p. Radhoštěm: 1984. S. 24.

 

  • 1981
Vávra, I., Lobotka, P., Zachar, F., Osvald, J., : TEM in situ observation of electromigration damage in Al-Cu stripe Physica Status Solidi A 63 (1981) 363.

 

  • 1980
Guldan, A., Osvald, J., Schilder, J., : Experimentálna kremíková maska pre rtg. litografiu, Elektrotechn. časopis 31 (1980) 782.

 

Osvald, J., Guldan, A., : Roentgenová litografia – metóda prenášania submikrometrových obrazcov, Slaboproudý obzor 41 (1980) 550.