Ing. Karol FRÖHLICH, DrSc.

  • 2019

Brndiarová, J., Šiffalovič, P., Hulman, M., Kalosi, A., Bodik, M., Skákalová, V., Micusik, M., Markovič, Z., Majková, E., and Fröhlich, K.:  Functionalized graphene transistor for ultrasensitive detection of carbon quantum dots, J. Applied Phys. 126 (2019) 214303.

Kundrata, I., Fröhlich, K., Vančo, L., Mičušík, M., and Bachmann, J.: Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films, Beilstein J. Nanotechnol. 10 (2019) 1443-1451.

Miranda, E., Muñoz-Gorriz, J., Suñé, J., and Fröhlich, K.: SPICE model for the current-voltage characteristic of resistive switching devices including the snapback effect, Microelectron. Engn. 215 (2019) 110998.

Chymo, F., Fröhlich, K., Kundrata, I., Hušeková, K., Harmatha, L., Racko, J., Breza, J., and Mikolášek, M.: Characterization of MIS photoanode with a thin SiO2 layer for photoelectrochemical water splitting, AIP Conf. Proc. 2131 (2019) 020020.

Miranda, E.A. and Fröhlich, K.: Compact modeling of complementary resistive switching devices using memdiodes, IEEE Trans. Electron Devices 66 (2019) 2831-2836.

Niu, G., Calka, P., Huang, P., Sharath, S.U., Petzold, S., Gloskovskii, A., Fröhlich, K., Zhao, Y., Kang, J., Schubert, M.A., Bärwolf, F., Ren, W., Ye, Z.-G., Perez, E., Wenger, C., Alff, L., and Schroeder, T.: Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy, Mater. Res. Lett. 7 (2019) 117-123.

Hudec, B., Chang, C.-C., Wang, I-T., Fröhlich, K., and Hou, T.-H.: Three-dimensional integration of ReRAMs, Proc. IEEE Conf. Nanotechnol. (2019) 8626351.

Pohorelec, O., Ťapajna, M., Gregušová, D., Fröhlich, K., and Kuzmík, J.: Investigation of threshold voltage instabilities in MOS-gated InGaN/AlGaN/GaN HEMTs. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 123-126.

Chymo, F., Fröhlich, K., Harmatha, L., Hušeková, K., Ondrejka, P., Kemeny, M.,  Hotový, I., and Mikolášek, M.: Development and characterization of photo-electrochemical MIS structures for hydrogen generation applications. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 103-106.

  • 2018

Fröhlich, K., Kundrata, I., Blaho, M., Precner, M., Ťapajna, M., Klimo, M., Šuch, O.,  and Škvarek, O.: Performance of HfOx– and TaOx-based resistive switching structures in circuits for min and max functions implementation, MRS Adv. 3 (2018) Iss. 59, 3427-3432.

Mikolášek, M., Fröhlich, K., Hušeková, K., Racko, J., Rehacek, V., Chymo, F., Ťapajna, M., and Harmatha, L.: Silicon based MIS photoanode for water oxidation: a comparison of RuO2 and Ni Schottky contacts, Applied Surface Sci 461 (2018) 48-53.

Fröhlich, K., Kundrata, I., Blaho, M., Precner, M., Ťapajna, M., Klimo, M., Šuch, O., and Škvarek, O.: Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions, J. Applied Phys. 124 (2018) 152109.

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, , Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

Mikolášek, M., Chymo, F., Fröhlich, K., Hušeková, K., Ondrejka, P., Racko, J., Hotovy, I., Breza, J., and Harmatha, L.: MIS structures with RuO2 Schottky contact for photoelectrochemical water splitting. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 163-166.

  • 2017
Blaho, M., Gregušová, D., Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., Kuzmík, J., : Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs. Applied Phys. Lett. 111 (2017) 033506. (APVV 15-0673). (CENTE).

 

Kukli, K., Kemeli, M., Vehkamäki, M., Heikkilä, M., Mizohata, K., Kalam, K., Ritala, M., Leskelä, M., Kundrata, I., Fröhlich, K., : Atomic layer deposition and properties of mixed Ta2O5 ZrO2 films,. AIP Adv. 7 (2017) 025001. (APVV 14-0560). (VEGA 2/0138/14).

 

Spassov, D., Paskaleva, A., Fröhlich, K., Ivanov, T., : Effect of oxygen concentration and metal electrode on the resistive switching in MIM capacitors with transition metal oxides. IOP Conf. Ser.: J. Phys. 794 (2017) 012016.

 

Stoklas, R., Gregušová, D., Blaho, M., Fröhlich, K., Novák, J., Matys, M., Yatabe, Z., Kordoš, P., Hashizume, T., : Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction,. Semicond. Sci Technol. 32 (2017) 045018. (VEGA 2/0105/13). (VEGA 2/0138/14). (APVV 14-0297). (CENTE).

 

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pecz, B., Brunner, F., Kuzmík, J., : Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties. Applied Surface Sci 426 (2017) 656-661. (CENTE II). (APVV 15-0031). (VEGA 2/0138/14).

 

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pecz, B., Kuzmík, J., : Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density. J. Vacuum Sci Technol. B 35 (2017) 01A107. (SAFEMOST). (VEGA 2/0138/14). (CENTE).

 

Harmatha, L., Mikolášek, M., Racko, J., Fröhlich, K., Ťapajna, M., Benko, P., : Silicon based MOS structures with a Ti02 layer grown by atomic layer deposition for solar fuel generation In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 263-266.

 

  • 2016
Hudec, B., Hsu, C., Wang, I., Lai, W., Chang, C., Wang, T., Fröhlich, K., Ho, C., Lin, C., Hou, T., : 3D resistive RAM cell design for high-density storage class memory – a review. Sci China Infor. Sci 59 (2016) 061403. (VEGA 2/0138/14).

 

Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., Kuzmík, J., : DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.(SAFEMOST). (APVV 15-0243). (APVV 15-0673).

 

Ťapajna, M., Hušeková, K., Pohorelec, O., Válik, L., Haščík, Š., Gucmann, F., Fröhlich, K., Gregušová, D., Kuzmík, J., : Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown Al2O3 gate dielectric In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 207-211. (SAFEMOST). (APVV 15-0031). (VEGA 2/0138/14).

 

Hudec, B., Wang, I., Lai, W., Chang, C., Jančovič, P., Fröhlich, K., Mičušík, M., Omastová, M., Hou, T., :Interface engineering HfO2-based 3D vertical ReRAM. J. Phys. D 49 (2016) 215102. (VEGA 2/0138/14).

 

Mikolášek, M., Racko, J., Řeháček, V., Harmatha, L., Ťapajna, M., Fröhlich, K., : Silicon based metal-insulator-semiconductor structures for photoelectrochemical solar fuel generation In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 45-48. (VEGA 2/0138/14).

 

Stoklas, R., Gregušová, D., Fröhlich, K., Kuzmík, J., : Temperature-dependent of sub-threshold slope of AlGaN/GaN MOSHFETs with HfO2 gate oxide prepared by ALD In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 189-192. (VEGA 2/0105/13). (VEGA 2/0138/14). (CENTE). (APVV 15-0673).

 

Benko, P., Mikolášek, M., Harmatha, L., Fröhlich, K., : The influence of ozone pre-treatment in Hf2-based resistive switching memory structures In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 243-246. (APVV 0509-10).

 

Ťapajna, M., Válik, L., Gregušová, D., Fröhlich, K., Gucmann, F., Hashizume, T., Kuzmík, J., : Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 1-4.. (SAFEMOST). (APVV 15-0031). (VEGA 2/0138/14).

 

  • 2015
Benko, P., Mikolášek, M., Jančovič, P., Harmatha, L., Fröhlich, K., : Influence of temperature on resistive switching mechanism in HfO2-based atomic layer deposition grown metal-insulator-metal structures In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 169-172.. (APVV 0509-10).

 

Brndiarová, J., Fröhlich, K., Hulman, M., Rosová, A., Dobročka, E., Kahro, T., Aarik, J., : Integration of atomic layer deposited Al2O3 dielectrics with graphene In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 169-174. (VEGA 2/0138/14). (ASFEU ITMS 26240220088).

 

Kundrata, I., Fröhlich, K., Ballo, P., : Lithium ion intercalation into thin film anatase In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 184-188.

 

Miranda, E., Hudec, B., Suñé, J., Fröhlich, K., : Model for the current–voltage characteristic of resistive switches based on recursive hysteretic operators. IEEE Electron Dev. Lett. 36 (2015) 944-946. (VEGA 2/0138/14). (APVV 14-0560).

 

Blasco, J., Jančovič, P., Fröhlich, K., Suñé, J., Miranda, E., : Modeling of the switching I-V characteristics in ultrathin (5nm) atomic layer deposited HfO2 films using the logistic hysteron. J. Vacuum Sci Technol. B 33 (2015) 01A102. (APVV 0509-10).

 

Šuch, O., Linn, E., Klimo, M., Jančovič, P., Frátrik, M., Fröhlich, K., : On passive permutation circuits. IEEE J. Emerg. Sel. Topics Circuits Syst. 5 (2015) 173-182. (APVV 0509-10).

 

Čičo, K., Jančovič, P., Dérer, J., Šmatko, V., Rosová, A., Blaho, M., Hudec, B., Gregušová, D., Fröhlich, K., :Resistive switching in nonplanar HfO2-based structures with variable series resistance. J. Vacuum Sci Technol. B 33 (2015) 01A108.. (APVV 0509-10). (VEGA 2/0138/14). (CENTE II).

 

Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J., Grandjean, N., Kuzmík, J., : Self-aligned normally-off metal-oxide-semiconductor n+++GaN/InAlN/GaN high-electron mobility transistors. Phys. Status Solidi A 112 (2015) 1086-1090. (MORGaN). (APVV 0367-11). (VEGA 2/0138/14). (CENTE).

 

Gregušová, D., Kúdela, R., Gucmann, F., Stoklas, R., Blaho, M., Ťapajna, M., Kordoš, P., Fröhlich, K., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 58.. (VEGA 2/0105/13). (APVV 14-0297). (CENTE).

 

  • 2014
Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmík, J., : Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth. Applied Phys. Lett. 104 (2014) 013506. (HiPoSwitch). (APVV 0367-11). (VEGA 2/0105/13).

 

Aarik, L., Arroval, T., Rammula, R., Mändar, H., Sammelselg, V., Hudec, B., Hušeková, K., Fröhlich, K., Aarik, J., : Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors,. Thin Solid Films 565 (2014) 19-24. (APVV 0133-07). (VEGA 2/0138/14).

 

Harmatha, L., Žiška, M., Jančovič, P., Fröhlich, K., Hrubčín, L., Mikolášek, M., Benko, P., Racko, J., Skuratov, V., : Electro-physical properties of mim structures after Xe heavy ion irradiation. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 44-47. (APVV 0509-10).

 

Osvald, J., Vanko, G., Fröhlich, K., : Frequency dependent capacitance of insulator GaN/AlGaN/GaN heterostructure In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 221-224.(VEGA 2/0167/13). (APVV 0450-10). (APVV 0199-10). (APVV 0455-12).

 

Stoklas, R., Gregušová, D., Blaho, M., Čičo, K., Fröhlich, K., Novák, J., Kordoš, P., : Gate leakage reduction of AlGaN/GaN MOS-HFETs with HfO2 prepared by ALD In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 133-136.. (VEGA 2/0105/13). (VEGA 2/0138/14). (APVV 0301-10). (CENTE).

 

Gucmann, F., Kúdela, R., Fröhlich, K., Liday, J., Vogrinčič, P., Gaži, Š., Stoklas, R., Kordoš, P., Novák, J., Gregušová, D., : III-As high electron mobility transistors with recessed ex-situ gate oxide In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 5-8. (VEGA 2/0105/13). (VEGA 2/0098/13). (CENTE).

 

Arroval, T., Aarik, L., Rammula, R., Mändar, H., Aarik, J., Hudec, B., Hušeková, K., Fröhlich, K., : Influence of growth temperature on the structure and electrical properties of high-permittivity TiO2 films in TiCl4-H2O and TiCl4-O3 atomic-layer-deposition processes,. Phys. Status Solidi a 211 (2014) 425-432. (VEGA 2-0147-11).

 

Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., Kordoš, P., : InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator. Applied Phys. Lett. 105 (2014) 183504. (VEGA 2/0105/13)(VEGA 2/0138/14). (CENTE).

 

Murakami, K., Rommel, M., Hudec, B., Rosová, A., Hušeková, K., Dobročka, E., Rammula, R., Kasikov, A., Han, J., Lee, W., Song, S., Paskaleva, A., Bauer, A., Frey, L., Fröhlich, K., Aarik, J., Hwang, C., : Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes. ACS Applied Mater. Interfaces 6 (2014) 2486-2492. (VEGA 2-0147-11). (APVV 0509-10).

 

Paskaleva, A., Hudec, B., Jančovič, P., Fröhlich, K., : Resistive switching effects in Pt/HfO2/TiN MIM structures and their dependence on bottom electrode interface engineering.. In: IEEE Proc. 29th Inter. Conf. Microelectr. – MIEL 2014. IEEE 2014. ISBN: 978-1-4799-5296-0. P. 285-288.(APVV 0509-10). (VEGA 2/0138/14).

 

Jančovič, P., Hudec, B., Dobročka, E., Dérer, J., Fedor, J., Fröhlich, K., : Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures. Applied Surface Sci 312 (2014) 112-116.(APVV 0509-10). (VEGA 2/0138/14). (CENTE).

 

Hudec, B., Paskaleva, A., Jančovič, P., Dérer, J., Fedor, J., Rosová, A., Dobročka, E., Fröhlich, K., :Resistiveswitching in TiO2-based metal-insulator-metal structures with Al2O3 barrier layer at the metal/dielectric interface. Thin Solid Films 563 (2014) 10-14. (VEGA 2/0138/14). (APVV 0509-10).

 

Paskaleva, A., Hudec, B., Jančovič, P., Fröhlich, K., Spassov, D., : The influence of technology and switching parameters on resistive switching behavious of Pt/HfO2/TiN MIM structures. Facta Universitas 27 (2014) 621.

 

  • 2013
Aarik, J., Arroval, T., Aarik, L., Rammula, R., Kasikov, A., Mändar, H., Hudec, B., Hušeková, K., Fröhlich, K., : Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current. J. Crystal Growth 382 (2013) 61-66. (VEGA 2-0147-11).

 

Fröhlich, K., Jančovič, P., Hudec, B., Dérer, J., Paskaleva, A., Bertaud, T., Schroeder, T., : Atomic layer deposition of thin oxide films for resistive switching. ECS Trans. 58 (2013) 163-170. (VEGA 2-0147-11). (APVV 0509-10). (KCMTE).

 

Hudec, B., Hušeková, K., Rosová, A., Šoltýs, J., Rammula, R., Kasikov, A., Uustare, T., Mičušík, M., Omastová, M., Aarik, J., Fröhlich, K., : Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor. J. Phys. D 46 (2013) 385304. (APVV 0133-07). (VEGA 2-0147-11). (KCMTE).

 

Blaho, M., Gregušová, D., Jurkovič, M., Haščík, Š., Fedor, J., Kordoš, P., Fröhlich, K., Brunner, F., Cho, E., Hilt, O., Würfl, H., Kuzmík, J., : Ni/Au-Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOSHEMTs. Microelectr. Engn. 112 (2013) 204-207. (HiPoSwitch). (APVV 0104-10). (APVV 0367-11).

 

Jurkovič, M., Gregušová, D., Palankovski, V., Haščík, Š., Blaho, M., Čičo, K., Fröhlich, K., Carlin, J., Grandjean, N., Kuzmík, J., : Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region,. IEEE Electron Dev. Lett. 34 (2013) 432-434. (MORGaN). (APVV 0104-10).

 

Fröhlich, K., : TiO2-based structures for nanoscale memory applications. Invited Review. Materials Sci Semicond Process. 16 (2013) 1186-1195. (APVV 0509-10). (VEGA 2-0147-11).

 

  • 2012
Aarik, J., Hudec, B., Hušeková, K., Rammula, R., Kasikov, A., Arroval, T., Uustare, T., Fröhlich, K., : Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes. Semicond. Sci Technol. 27 (2012) 074007. (APVV 0509-10). (VEGA 2-0147-11).

 

Válik, L., Ťapajna, M., Gucmann, F., Fedor, J., Šiffalovič, P., Fröhlich, K., : Distribution of fixed charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 227-230.

 

Čičo, K., Gregušová, D., Kuzmík, J., Jurkovič, M., Alexewicz, A., di Forte Poisson, M., Pogany, D., Strasser, G., Delage, S., Fröhlich, K., : Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation. Solid-State Electr. 67 (2012) 74-78. (MORGaN).

 

Fröhlich, K., Mičušík, M., Dobročka, E., Šiffalovič, P., Gucmann, F., Fedor, J., : Properties of Al2O3 thin films grown by atomic layer deposition. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 171-174.

 

Fröhlich, K., Hudec, B., Ťapajna, M., Hušeková, K., Rosová, A., Eliáš, P., Aarik, J., Rammula, R., Kasikov, A., Arroval, T., Aarik, L., Murakami, K., Rommel, M., Bauer, A., : TiO2-based metal-insulator-metal structures for future DRAM storage capacitors ECS Transactions 50 (2012) 79-87.

 

  • 2011
Racko, J., Mikolášek, M., Harmatha, L., Breza, J., Hudec, B., Fröhlich, K., Aarik, J., Tarre, A., Granzner, R., Schwierz, F., : Analysis of leakage current mechanisms in RuO2–TiO2–RuO2 MIM structures. J. Vacuum Sci Technol. B 29 (2011) 01AC08.

 

Hudec, B., Hušeková, K., Dobročka, E., Aarik, J., Rammula, R., Kasikov, A., Tarre, A., Vincze, A., Fröhlich, K., : Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer. J. Vacuum Sci Technol. B 29 (2011) 01AC09. (APVV 0133-07). (VEGA 2/0031/08).

 

Čičo, K., Hušeková, K., Ťapajna, M., Gregušová, D., Stoklas, R., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., Fröhlich, K., : Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics. J. Vacuum Sci Technol. B 29 (2011) 01A808.

 

Hudec, B., Hušeková, K., Tarre, A., Han, J., Han, S., Rosová, A., Lee, W., Kasikov, A., Song, S., Aarik, J., Hwang, C., Fröhlich, K., : Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes. Microelectr. Engn. 88 (2011) 1514-1516. (CENTE II). (APVV 0133-07). (VEGA 2-0147-11).

 

Fröhlich, K., Fedor, J., Kostič, I., Maňka, J., Ballo, P., : Gadolinium scandate: next candidate for alternative gate dielelectric in CMOS technology?, J. Electr. Engn. 62 (2011) 54-56.

 

Fröhlich, K., Hudec, B., Hušeková, K., Aarik, J., Tarre, A., Kasikov, A., Rammula, R., Vincze, A., : Low equivalent oxide thickness TiO2 based capacitors for DRAM applications, ECS Trans. 41 no. 2 (2011) 73.

 

Fröhlich, K., Hudec, B., Aarik, J., Tarre, A., Machajdík, D., Kasikov, A., Hušeková, K., Gaži, Š., : Post-deposition processing and oxygen content of TiO2-based capacitors. Microelectr. Engn. 88 (2011) 1525-1528. (APVV 0133-07).

 

Nemec, M., Benko, P., Neupauer, M., Čičo, K., Harmatha, L., Fröhlich, K., : Preparation and characterization of thin ZrO2 layers for gate insulation in MOSFET. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 98-101.

 

Paskaleva, A., Ťapajna, M., Dobročka, E., Hušeková, K., Atanassova, E., Fröhlich, K., : Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks. Applied Surface Sci 257 (2011) 7876-7880.(APVV 0133-07). (VEGA 2/0031/08).

 

Racko, J., Mikolášek, M., Granzner, R., Breza, J., Donoval, D., Grmanová, A., Harmatha, L., Schwierz, F.,Fröhlich, K., : Trap-assisted tunnelling current in MIM structures. Central Europ. J. Phys. 9 (2011) 230-241.

 

  • 2010
Ťapajna, M., Paskaleva, A., Atanassova, E., Dobročka, E., Hušeková, K., Fröhlich, K., : Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures Semicond. Sci Technol. 25 (2010) 075007.

 

Hušeková, K., Dobročka, E., Rosová, A., Šoltýs, J., Šatka, A., Fillot, F., Fröhlich, K., : Growth of RuO2 thin films by liquid injection atomic layer deposition. Thin Solid Films 518 (2010) 4701-4704.

 

Hudec, B., Hušeková, K., Dobročka, E., Lalinský, T., Aarik, J., Aidla, A., Fröhlich, K., : High-permittivity metal-insulator-metak capacitors with TiO2 rutile dielectric and RuO2 bottom electrode IOP Conf. Series: Mater. Sci Engn. 8 (2010) 012024.

 

Jurkovič, M., Hušeková, K., Čičo, K., Dobročka, E., Nemec, M., Fedor, J., Fröhlich, K., : Characterization of high permittivity GdScO3 films prepared by liquid injection MOCVD. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 247-250.

 

Nemec, M., Jurkovič, M., Harmatha, L., Mokryš, P., Weber, B., Písečný, P., Fröhlich, K., : Characterization of MOS structures by conductance method. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 150-153.

 

Kohn, E., Alomari, M., Denisenko, A., Dipalo, M., Maier, D., Medjoub, F., Pietzka, C., Delage, S., di Forte Poisson, M., Morvan, E., Sarazin, N., Jacquet, J., Dua, C., Carlin, J., Grandjean, N., Py, M., Gonschorek, M., Kuzmík, J., Pogany, D., Pozzovivo, G., Ostermaier, C., Tóth, L., Pecz, B., De Jaeger, J., Gaquiere, C., Čičo, K.,Fröhlich, K., Georgakilas, A., Iliopoulos, E., Konstantinidis, G., Giessen, C., Heuken, M., Schineller, B., : InAlN/GaN heterostructures for microwave power and beyond. In: IEDM 2009. Piscataway: IEEE, 2010. ISBN 978-1-4244-5639-0. P. 173-176.

 

Čičo, K., Gregušová, D., Gaži, Š., Šoltýs, J., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., Fröhlich, K., : Optimization of the ohmic contact processing in InAlN/GaN high electron mobility transistors for lower temprerature of annealing, Phys. Status Solidi c 7 (2010) 108-111.

 

Kuzmík, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquiere, C., DeJaeger, J., Čičo, K., Fröhlich, K., Škriniarová, J., Kováč, J., Strasser, G., Pogany, D., Gornik, E., : Proposal and performance analysis of normally off GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier. IEEE Trans. Electron Dev. 57 (2010) 2144-2154.

 

Hudec, B., Hranai, M., Hušeková, K., Aarik, J., Tarre, A., Fröhlich, K., : Resistive switching in RuO2/TiO2/RuO2 MIM structures for non-volatile memory application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 255-258.

 

Kordoš, P., Mikulics, M., Fox, A., Gregušová, D., Čičo, K., Carlin, J., Grandjean, N., Novák, J., Fröhlich, K., :RF performance of InAlN/GaN HFETs and MOSHFETs with up to 21. IEEE Electron Dev. Lett. 31 (2010) 180-182.

 

Hudec, B., Hušeková, K., Aarik, J., Tarre, A., Kasikov, A., Fröhlich, K., : RuO2/TiO2 based MIM capacitors for DRAM application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 341-344.

 

  • 2009
Fröhlich, K., Aarik, J., Ťapajna, M., Rosová, A., Aidla, A., Dobročka, E., Hušeková, K., : Epitaxial growth of high-κ TiO2 rutile films on RuO2 electrodes. J. Vacuum Sci Technol. B 27 (2009) 266-270. (APVV 0133-07). (VEGA 2/0031/08).

 

Čičo, K., Kuzmík, J., Liday, J., Hušeková, K., Pozzovivo, G., Carlin, J., Grandjean, N., Pogany, D., Vogrinčič, P., Fröhlich, K., : InAlN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases. J. Vacuum Sci Technol. B 27 (2009) 218-222. (VEGA 2/0031/08).

 

Ťapajna, M., Kuzmík, J., Čičo, K., Pogany, D., Pozzovivo, G., Strasser, G., Abermann, S., Bertagnolli, E., Carlin, J., Grandjean, N., Fröhlich, K., : Interface states and trapping effects in Al2O3- and ZrO2/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures. Japan. J. Applied Phys. 48 (2009) 090201.

 

Hušeková, K., Jurkovič, M., Čičo, K., Machajdík, D., Dobročka, E., Lupták, R., Fröhlich, K., : Preparation of high permitivity GdScO3 films by liquid injection MOCVD, ECS Trans. 25 (2009) 1061.

 

Vincze, A., Lupták, R., Hušeková, K., Dobročka, E., Fröhlich, K., : Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD. Vacuum 84 (2009) 170. (VEGA 2/0031/08).

 

Fröhlich, K., Vincze, A., Dobročka, E., Hušeková, K., Čičo, K., Uherek, F., Lupták, R., Ťapajna, M., Machajdík, D., : Thermal stability of GdScO3 dielectric films grown on Si and InAlN/GaN substrates, Mater. Res. Soc. Symp. Proc. 1155 (2009) C09-03.

 

Ťapajna, M., Čičo, K., Kuzmík, J., Pogany, D., Pozzovivo, G., Strasser, G., Carlin, J., Grandjean, N., Fröhlich, K., : Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures. Semicond. Sci Technol. 24 (2009) 035008.

 

Ostermaier, C., Pozzovivo, G., Carlin, J., Basnar, B., Schrenk, W., Douvry, Y., Gaquiere, C., DeJaeger, J., Čičo, K., Fröhlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmík, J., : Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation. IEEE Electron Dev. Lett. 30 (2009) 1030-1032.

 

  • 2008
Fröhlich, K., : Ako polovodiče spôsobili informačnú revolúciu. In: Rozprávanie o materiáloch. Bratislava: ÚMMS SAV, 2008. ISBN 978-80-970027-6-3. S. 17-24.

 

Paskaleva, A., Ťapajna, M., Atanassova, E., Fröhlich, K., Vincze, A., Dobročka, E., : Effect of Ti doping on Ta2O5 stacks with Ru and Al gates. Applied Surface Sci 254 (2008) 5879-5885.

 

Ťapajna, M., Dobročka, E., Paskaleva, A., Hušeková, K., Atanassova, E., Fröhlich, K., : Electrical characterization of Ru- and RuO2/Ta2O5 gate stacks for nanoscale DRAM technology. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 267-270.

 

Fröhlich, K., Ťapajna, M., Rosová, A., Dobročka, E., Hušeková, K., Aarik, J., Aidla, A., : Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes. Electrochem. Solid-State Lett. 11 (2008) G19-G21. (VEGA 2/0031/08).

 

Vincze, A., Lupták, R., Hušeková, K., Fröhlich, K., : High κ semiconductor structures investigation using SIMS. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 246-249.

 

Čičo, K., Gregušová, D., Kuzmík, J., di Forte Poisson, M., Lalinský, T., Pogany, D., Delage, S., Fröhlich, K., : InAlN/GaN MOSHEMT with Al2O3 insulating film. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 87-91.

 

Pozzovivo, G., Kuzmík, J., Golka, K., Čičo, K., Fröhlich, K., Carlin, J., Gonschorek, M., Grandjean, N., Schrenk, W., Strasser, G., Pogany, D., : Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al2O3 gate insulation grown by CVD. Physica Status Solidi c 5 (2008) 1956-1958.

 

Hudec, B., Ťapajna, M., Hušeková, K., Aarik, J., Aidla, A., Fröhlich, K., : Low equivalent oxide thickness metal/insulator/metal structures for DRAM applications. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 123-126.

 

Benko, P., Ťapajna, M., Paskaleva, A., Atanassova, E., Fröhlich, K., : Measurement of electrical properties on MOS structure with Ta2O5 gate dielectric layer and Ru-based gate electrodes. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 28-31.

 

Ťapajna, M., Rosová, A., Dobročka, E., Štrbik, V., Gaži, Š., Fröhlich, K., Benko, P., Harmatha, L., Manke, C., Baumann, P., : Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes. J. Applied Phys. 103 (2008) 073702.

 

  • 2007
Ťapajna, M., Rosová, A., Hušeková, K., Roozeboom, F., Dobročka, E., Fröhlich, K., : Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1-xOy ultrathin gate dielectrics gated with Ru electrode. Microelectr. Engn. 84 (2007) 2366-2369.

 

Pozzovivo, G., Kuzmík, J., Golka, K., Schrenk, W., Strasser, G., Pogany, D., Čičo, K., Ťapajna, M., Fröhlich, K., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., : Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors. Applied Phys. Lett. 91 (2007) 043509.

 

Čičo, K., Kuzmík, J., Gregušová, D., Stoklas, R., Lalinský, T., Georgakilas, A., Pogany, D., Fröhlich, K., :Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures. Microelectr. Reliability 47 (2007) 790-793.

 

Gregušová, D., Stoklas, R., Čičo, K., Lalinský, T., Fröhlich, K., Novák, J., Kordoš, P., : Preparation and properties of MOSHFETs based on MOVPE grown AlGaN/GaN heterostructure and MOCVD deposited Al2O3 gate oxide. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 85-88.

 

Kuzmík, J., Pozzovivo, G., Čičo, K., Golka, K., Schrenk, W., Carlin, J., Gonschorek, M., Grandjean, N.,Fröhlich, K., Strasser, G., Pogany, D., : Technology and performance of Al2O3/InAlN/AlN/GaN MOS HEMTs. In: Proc. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits. Ed. G. Meneghesso. Venice: 2007. P. 359-362.

 

Machajdík, D., Kobzev, A., Hušeková, K., Ťapajna, M., Fröhlich, K., Schram, T., : Thermal stability of advanced gate stacks consisting of a Ru electrode and Hf-based gate dielectrics for CMOS technology. Vacuum 81 (2007) 1379-1384.

 

  • 2006
Ťapajna, M., Hušeková, K., Machajdík, D., Kobzev, A., Schram, T., Lupták, R., Harmatha, L., Fröhlich, K., :Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology. Microelectr. Engn. 83 (2006) 2412.

 

Balog, M., Šajgalík, P., Hofer, F., Warbichler, P., Fröhlich, K., Vávra, O., Janega, J., Huang, J., : Electrically conductive SiC–(Nb,Ti)ss–(Nb,Ti)Css cermet. J. Europ. Ceramic Soc. 26 (2006) 1259-1266.

 

Fröhlich, K., Espinos, J., Ťapajna, M., Hušeková, K., Lupták, R., : Energy band diagram of the Ru/Hf0.75Si0.25Oy/Si gate stack. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 29-32.

 

Fröhlich, K., Lupták, R., Ťapajna, M., Hušeková, K., Weber, U., Baumann, P., Lindner, J., : Fixed oxide charge in Ru-based chemical vapour deposited high-κ gate stacks In: Defects in high-κ gate dielectric stacks. Ed. E.P. Gusev. Springer 2006. P. 277-286.

 

Manke, C., Boissiere, O., Weber, U., Barbar, G., Baumann, P., Lindner, J., Ťapajna, M., Fröhlich, K., :Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures. Microelectr. Engn. 83 (2006) 2277.

 

Fröhlich, K., Lupták, R., Dobročka, E., Hušeková, K., Čičo, K., Rosová, A., Lukosius, M., Abrutis, A., Písečný, P., Espinos, J., : Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition. Materials Sci Semicond Process. 9 (2006) 1065-1072.

 

Ťapajna, M., Hušeková, K., Fröhlich, K., Dobročka, E., Roozeboom, F., : Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 21-24.

 

Franta, M., Rosová, A., Ťapajna, M., Dobročka, E., Fröhlich, K., : Microstructure of HfO2 and HfxSi1-xOy dielectric films prepared on Si for advanced CMOS application. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 47-50.

 

Rossel, C., Rosová, A., Hušeková, K., Machajdík, D., Fröhlich, K., : Phase stability of La0.5Sr0.5CoO3−y films upon annealing in hydrogen atmosphere. J. Applied Phys. 100 (2006) 044501.

 

Ťapajna, M., Hušeková, K., Espinos, J., Harmatha, L., Fröhlich, K., : Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high-κ dielectric. Materials Sci Semicond Process. 9 (2006) 969-974.

 

Fröhlich, K., Lupták, R., Hušeková, K., Čičo, K., Ťapajna, M., Weber, U., Baumann, P., Lindner, J., Espinos, J., : Properties of Ru/HfxSi1-xOy/Si metal oxide semiconductor gate stack structures grown by atomic vapor deposition. J. Electrochem. Soc. 153 (2006) F176-F179.

 

Čičo, K., Kuzmík, J., Gregušová, D., Lalinský, T., Georgakilas, A., Pogany, D., Fröhlich, K., : Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 197-200.

 

  • 2005
Machajdík, D., Kobzev, A., Fröhlich, K., : Complementarity of X-ray diffraction and RBS in thin film characterization. Vacuum 78 (2005) 455-461.

 

Ťapajna, M., Harmatha, L., Fröhlich, K., Hušeková, K., De Gendt, S., Schram, T., : Electrical characterisation of Ru/Hf-based high-k dielectric gate stacks for advanced CMOS technology. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 98-101.

 

Písečný, P., Harmatha, L., Jakabovič, J., Búc, D., Fröhlich, K., : Electrical characterization of Ni/La2O3 high-k dielectric gate stack for advanced CMOS technology. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 94-97.

 

Lupták, R., Fröhlich, K., Rosová, A., Hušeková, K., Ťapajna, M., Machajdík, D., Jergel, M., Espinos, J., Mansilla, C., : Growth of gadolinium oxide films for advanced MOS structure. Microelectr. Engn. 80 (2005) 154-157.

 

Čičo, K., Rosová, A., Fröhlich, K., Hušeková, K., Valent, P., Jergel, M., : Characterization of Al2O3 gate dielectric films grown on Si substrate. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 196-199.

 

Ťapajna, M., Harmatha, L., Hušeková, K., Fröhlich, K., : Measurement of generation parameters on Ru/HfO2/Si MOS capacitor, Measurement Sci Rev. 5 (2005) 42.

 

Fröhlich, K., Lupták, R., Hušeková, K., Čičo, K., Ťapajna, M., Weber, U., Baumann, P., Lindner, J., : Properties of Ru/HfxSi1-xOy/SI MOS gate stack structures grown by MOCVD. In: Proc. 207th Electrochemical Soc Meeting. Eds. E.P.Gusev et al. Pennington: The Electrochem. Soc, 2005. P. 339.

 

Lupták, R., Fröhlich, K., Hušeková, K., Ťapajna, M., Machajdík, D., Jergel, M., Espinos, J., Mansilla, C., : Structure and electrical properties of the thin Gd2O3 films. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 200-203.

 

Kallel, N., Fröhlich, K., Pignard, S., Oumezzine, M., Vincent, H., : Structure, magnetic and magnetoresistive properties of La0.7Sr0.3Mn1−xSnxO3 samples (0 ≤ x ≤ 0.20). J. Alloys Compounds 399 (2005) 20-26.

 

  • 2004
Písečný, P., Harmatha, L., Espinos, J., Fröhlich, K., Hušeková, K., : Application of lanthanum oxide insulator layer for new high=k Mos technology. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 203.

 

Ťapajna, M., Písečný, P., Lupták, R., Hušeková, K., Fröhlich, K., Harmatha, L., Hooker, J., Roozeboom, F., Jergel, M., : Application of Ru-based gate materials for CMOS technology. Materials Sci Semicond. Process. 7 (2004) 271-276.

 

Abilio, C., Rosina, M., Dubourdieu, C., Weiss, F., Fröhlich, K., Godinho, M., : Effect of magnetic field orientation on magnetization of (La0.7Sr0.3MnO3/SrTiO3)15 superlattices. J. Magnetism Magn. Materials 272–276 (2004) 1260–1262.

 

De Santis, A., Barucca, G., Bobba, F., Caciuffo, R., Fröhlich, K., Pripko, M., Cucolo, A., : Effect of oxygen post-annealing on the magnetoresistance of highly epitaxial La0.7Ca0.3MnO3 thin films. J. Magnetism Magn. Mater. 272-276 (2004) e1501-1502.

 

Fröhlich, K., Hušeková, K., Machajdík, D., Lupták, R., Ťapajna, M., Hooker, J., : Growth and properties of ruthenium based metal gates for pMOS devices. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 163-166.

 

Písečný, P., Hušeková, K., Fröhlich, K., Harmatha, L., Šoltýs, J., Machajdík, D., Espinos, J., Jergel, M., Jakabovič, J., : Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology. Materials Sci Semicond. Process. 7 (2004) 231-236.

 

Kallel, N., Fröhlich, K., Oumezzine, M., Ghedira, M., Vincent, H., Pignard, S., : Magnetism and giant magnetoresistance in La0.7Sr0.3Mn1−xMxO3 (M = Cr, Ti) systems. Phys. Stat. Solidi (c) 1 (2004) 1649–1654.

 

Fröhlich, K., Hušeková, K., Öszi, Z., Hooker, J., Fanciulli, M., Wiemer, C., Dimoulas, A., Vellianitis, G., Roozeboom, F., : Metal oxide gate electrodes for advanced CMOS technology. Annalen der Physik 13 (2004) 31.

 

Fröhlich, K., Hušeková, K., Machajdík, D., Lupták, R., Ťapajna, M., Hooker, J., Roozeboom, F., Kobzev, A., Wiemer, C., Ferrari, C., Fanciulli, M., Rossel, C., Cabral, C., : Preparation of SrRuO3 films for advanced CMOS metal gates. Materials Sci Semicond. Process. 7 (2004) 265-269.

 

Fröhlich, K., Hušeková, K., Machajdík, D., Hooker, J., Perez, N., Fanciulli, M., Ferrari, C., Wiemer, C., Dimoulas, A., Roozeboom, F., : Ru and RuO2 gate electrodes for advanced CMOS technology. Materials Sci Engn. B 109 (2004) 117–121.

 

Ťapajna, M., Písečný, P., Harmatha, L., Fröhlich, K., Hušeková, K., Lupták, R., Hooker, J., Jakabovič, J., : Ruthenium-based gate materials for advanced MOS technology. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 270-273.

 

Ťapajna, M., Čičo, K., Lupták, R., Hušeková, K., Fröhlich, K., Harmatha, L., Hooker, J., Roozeboom, F., : Thermal stability of ruthenium MOS gate electrodes. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 167-170.

 

  • 2003
Rosina, M., Audier, M., Dubourdieu, C., Fröhlich, K., Weiss, F., : Defects in (La0.7Sr0.3Mno3/SrTiO3)15 superlattices grown by pulsed injection MOCVD. J. Crystal Growth 259 (2003) 358-366.

 

Fröhlich, K., Cambel, V., Machajdík, D., Baumann, P., Lindner, J., Schumacher, M., Jurgensen, H., : Low-temperature growth of RuO2 films for conductive electrode applications. Materials Sci in Semicond. Processing 5 (2003) 173-177.

 

Babonas, G., Reza, A., Szymczak, M., Baran, M., Fröhlich, K., Jasutis, V., Diduszko, R., : Optical response of La1-xMnO3/Al2O3 films Acta Physica Polonica A 103 (2003) 77-83.

 

Machajdík, D., Kobzev, A., Fröhlich, K., Cambel, V., : RBS and ERD study of epitaxial RuO2 films deposited on different single crystal substrates. Vacuum 70 (2003) 313-317.

 

De Santis, A., Bobba, F., Cristiani, G., Cucolo, A., Fröhlich, K., Habermeier, H., Salvato, M., Vecchione, A., :Structural and electrical characterization of magnetoresistive La0.7Ca0.3MnO3 thin films. J. Magnetism Magnetic Mater. 262 (2003) 150-153.

 

  • 2002
Plecenik, A., Fröhlich, K., Espinos, J., Holdago, J., Halabica, A., Pripko, M., Gilabert, A., : Degradation of LaMnO3−y surface layer in LaMnO3−y/metal interface. Applied Phys. Lett. 81 (2002) 859.

 

Fröhlich, K., Machajdík, D., Cambel, V., Kostič, I., Pignard, S., : Epitaxial growth of low-resistivity RuO2 films on View the MathML source-oriented Al2O3 substrate. J. Crystal Growth 235 (2002) 377-383.

 

Rosová, A., Fröhlich, K., Machajdík, D., : Epitaxial growth of oxide thin films by MOCVD – characterization by TEM. In: 2nd (re-established) Annual Meeting of the Czechoslov. Microscopy Soc. Ed. L.Frank. Brno: CMS 2002. ISBN 80-238-8749-1. P. 101-104.

 

Plecenik, A., Gilabert, A., Fröhlich, K., Halabica, A., Pripko, M., Medici, M., Espinos, J., Holdago, J., : Oxygen loss of the manganite surface layer in La1-δ MnO3/metal interface. Transport, XPS, and photoconductivity measurements J. Supercond. 15 (2002) 579-582.

 

Baumann, P., Doppelt, P., Fröhlich, K., Gueroudji, L., Cambel, V., Machajdík, D., Schumacher, M., Lindner, J., Schienle, F., Burgess, D., Strauch, G., Jurgensen, H., Guillon, H., Jimenez, C., : Platinum, ruthenium and ruthenium dioxide electrodes deposited by metal organic chemical vapor deposition for oxide applications Integrated Ferroelectrics 44 (2002) 135.

 

Kováč, P., Hušek, I., Pachla, W., Melišek, T., Diduszko, R., Fröhlich, K., Morawski, A., Presz, A., Machajdík, D., : Structure, grain connectivity and pinning of as-deformed commercial MgB2 powder in Cu and Fe/Cu sheaths. Supercond. Sci Technol. 15 (2002) 1127-1132.
  • 2001
Bydžovský, J., Vávra, I., Fröhlich, K., Polák, M., Šmatko, V., Kováčová, E., Paškevic, P., : Application of La1−xMnO3 giant magnetoresistance sensors for testing of high-TC superconducting tapes. Sensors & Actuators A 91 (2001) 21-25.

 

Machajdík, D., Pevala, A., Fröhlich, K., Weiss, F., Figueras, A., : Experimental study of the resolution function of a texture diffractometer Materials Sci Forum 378-381 (2001) 235-239.

 

Rosina, M., Dubourdieu, C., Audier, M., Dooryhee, E., Hodeau, J., Weiss, F., Fröhlich, K., : Fine-structural characterisation of magnetic superlattices J. de Physique 11 (2001) Pr11-23-27.

 

Pripko, M., Halabica, A., Fröhlich, K., Plecenik, A., Cambel, V., Chromik, Š., Machajdík, D., : Growth and characterization of LaMnO3/SrTiO3, Bi-layer J. de Physique 11 (2001) Pr11-127-131.

 

Fröhlich, K., Pripko, M., Vávra, I., Sedlačková, K., Machajdík, D., : Growth of magnetoresistant La1-xMnO3 films on r-plane cut sapphire J. de Physique 11 (2001) Pr3-333-339.

 

Fröhlich, K., Machajdík, D., Cambel, V., Fedor, J., Pisch, A., Lindner, J., : Growth of Ru and Ru2 films by metal-organic chemical vapour deposition J. de Physique 11 (2001) Pr3-325-332.

 

Lenčéž, Z., Šajgalík, P., Balog, M., Fröhlich, K., Roncari, E., : Layered Si3N4/(SiAION+TiN) composites with self-diagnostic ability. In: Ceramic Materials and Componets for Engines. Weinheim: Wiley-VCH, 2001. P. 559-564.

 

Kováč, P., Hušek, I., Pachla, W., Diantoro, M., Bonfait, G., Maria, J., Fröhlich, K., Kopera, Ľ., Diduszko, R., Presz, A., : Material for resistive barriers in Bi-2223/Ag tapes. Supercond. Sci Technol. 14 (2001) 966-972.

 

Gilabert, A., Plecenik, A., Fröhlich, K., Gaži, Š., Pripko, M., Mozolová, Ž., Machajdík, D., Beňačka, Š., Medici, M., Grajcar, M., Kúš, P., : Photoinduced insulator–metal transition in La0.81MnO3/Al2O3/Nb tunnel junctions. Applied Phys. Lett. 78 (2001) 1712-1714.

 

Babonas, G., Reza, A., Fröhlich, K., Pripko, M., Machajdík, D., : Spectral ellipsometry of La1-xMnO3 films with different degree of epitaxy J. de Physique 11 (2001) Pr11-181-185.

 

Rosina, M., Dubourdieu, C., Weiss, F., Senateur, J., Fröhlich, K., : Structural properties of [La0.7Sr0.3MnO3/SrTiO3]15 superlattices prepared by pulsed injection-MOCVD J. de Physique 11 (2001) Pr3-341-347.

 

Fröhlich, K., Machajdík, D., Cambel, V., Lupták, R., Pignard, S., Weiss, F., Baumann, P., Lindner, J., : Substrate dependent growth of highly conductive RuO2 films J. de Physique 11 (2001) Pr11-77-81.

 

Halabica, A., Plecenik, A., Pripko, M., Fröhlich, K., : Time evolution of LaxMnO3/normal metal point contact resistance. J. de Physique 11 (2001) Pr11-205-208.

 

  • 2000
Španková, M., Vávra, I., Gaži, Š., Machajdík, D., Chromik, Š., Fröhlich, K., Hellemans, L., Beňačka, Š., :Growth and recrystallization of CeO2 thin films deposited on R-plane sapphire by off-axis RF sputtering. J. Crystal Growth 218 (2000) 287-293.

 

Weiss, F., Lindner, J., Senateur, J., Dubourdieu, C., Galindo, V., Audier, M., Abrutis, A., Rosina, M., Fröhlich, K., Haessler, W., Oswald, S., Figueras, A., Santiso, J., : Injection MOCVD: ferroelectric thin films and functional oxide superlattices. Surface Coatings Technol. 133-134 (2000) 191-197.

 

Fröhlich, K., Vávra, I., Gömöry, F., Šouc, J., Bydžovský, J., Kováč, P., Dobrovodský, J., Marysko, M., :Microstructure-dependent magnetoresistance in La1−xMnO3 thin films. J. Magnetism Magnetic Mater. 211 (2000) 67-72.

 

  • 1999
Fröhlich, K., Machajdík, D., Hellemans, L., Snauwaert, J., : Growth of high crystalline quality thin epitaxial CeO2 films on (1102) saphire J. de Physique IV 9 (1999) Pr8-341-347.

 

Machajdík, D., Pevala, A., Rosová, A., Fröhlich, K., Šouc, J., Weiss, F., Figueras, A., : On the problem of overlopping ? scans measured on thin films deposited on monocrystal substrates J. Applied Crystall. 32 (1999) 736-743.

 

  • 1998
Pignard, S., Vincent, H., Senateur, J., Fröhlich, K., Šouc, J., : Effect of crystallinity on the magnetoresistive properties of 0,8MnO3-δ thin films grown by chemical vapor deposition Applied Phys. Lett. 73 (1998) 999.

 

Fröhlich, K., Šouc, J., Rosina, M., Bydžovský, J., : Magnetoresistivity in thin La1-xMnO3 films prerared by metal organic chemical vapour deposition Acta Physica Slovaca 48 (1998) 727.

 

Fröhlich, K., Šouc, J., Machajdík, D., Jergel, M., Snauwaert, J., Hellemans, L., : Surface quality of epitaxial CeO2 thin films grown on sapphire by aerosol metal organic chemical vapour deposition Chemical Vapor Deposition 4 (1998) 216.

 

  • 1997
Šouc, J., Fröhlich, K., Šmatko, V., Takács, S., Weiss, F., Delaboulighe, G., : Critical current anisotropy of YBa2Cu3O7 thin films. IoP Conf. Series No. 158 (1997) 97.

 

Kováč, P., Cesnak, L., Melišek, T., Hušek, I., Fröhlich, K., : Critical current to n-exponent relation in Bi(2223)/Ag tapes Supercond. Sci Technol. 10 (1997) 605.

 

Fröhlich, K., Rosová, A., Machajdík, D., Šouc, J., Figueras, A., Weiss, F., Chenevier, B., Snauwaert, J., : Growth and structure of buffer layers for high temperature superconducting films Acta Physica Polonica A 92 (1997) 255.

 

Fröhlich, K., Machajdík, D., Vávra, I., Šouc, J., Rosová, A., Figueras, A., Weiss, F., Dahmen, K., : Growth of YBa2Cu3O7/CeO2/Al2O3 heteroepitaxial films by aerosol MOCVD J. Alloys Compounds 251 (1997) 284.

 

Weiss, F., Schmatz, U., Pisch, A., Felten, F., Pignard, S., Senateur, J., Abrutis, A., Fröhlich, K., Selbmann, D., Klippe, J., : HTS thin films by innovative MOCVD processes J. Alloys Compounds 251 (1997) 264.

 

Fröhlich, K., Šouc, J., Rosová, A., Machajdík, D., Graboy, I., Svetchnikov, V., Figueras, A., Weiss, F., : Superconducting YBa2Cu3O7 films prepared by aerosol metal organic chemical vapour deposition on Al2O3 substrate with CeO2 buffer layer Supercond. Sci Technol. 10 (1997) 657.

 

Fröhlich, K., Šouc, J., Machajdík, D., Weiss, F., : YBa2Cu3O7 films grown on CeO2/Al2O3 substrate by aerosol MOCVD IoP Conf. Series No. 158 (1997) 233.

 

  • 1996
Cesnak, L., Gömöry, F., Kováč, P., Šouc, J., Fröhlich, K., : Scaling of voltage-current characteristics of superconductors with low and high critical temperatures. In.: Cryogenics ’96. Prague: 1996. P. 19-23.

 

Fröhlich, K., Šouc, J., Machajdík, D., Rosová, A., : Tenké vrstvy kysličníkov pripravovaných metódou MOCV. In: Tenké vrstvy, príprava a technické aplikácie. Bratislava: FEI STU 1996. S. 38.

 

Machajdík, D., Fröhlich, K., Weiss, F., Kobzev, A., : Texture analysis et the YBCO thin films reveals twinning in the YBCO crystallites Mater. Sci Forum 228 (1996) 901-906.

 

Cesnak, L., Gömöry, F., Kováč, P., Šouc, J., Fröhlich, K., Melišek, T., Hilscher, G., Puttner, M., Holubar, T., : Treating the I-V characteristics of low as well high Tc superconductors in context with the pinning potential Applied Supercond. 4 (1996) 277.

 

  • 1995
Fröhlich, K., Machajdík, D., Rosová, A., Vávra, I., Weiss, F., Bochu, B., Senateur, J., : Growth of SrTiO3 thin epitaxial films by aerosol MOCVD Thin Solid Films 260 (1995) 187-191.

 

Fröhlich, K., Šouc, J., Machajdík, D., Kobzev, A., Weiss, F., Senateur, J., Dahmen, K., : Propeties of thin epitaxial aerosol MOCVD CeO2 films grown on (1102) sapphire J. de Physique IV Coll. 5 Suppl. II (1995) C5-533.

 

Vávra, I., Rosová, A., Fröhlich, K., Šouc, J., Chromik, Š., : TEM characterisation of buffer layers for epitaxial YBaCuO growth Physica Status Solidi A 150 (1995) 371.

 

Weiss, F., Schmatz, U., Senateur, J., Fröhlich, K., Machajdík, D., Selbmann, D., Krellmann, M., : YBCO films with buffer layers on technical substrates prepared by aerosol MOCVD IoP Conf. Ser. No. 148 (1995) 919.

 

  • 1994
Kováč, P., Hušek, I., Fröhlich, K., Šouc, J., Machajdík, D., Tarenkov, V., Weiss, F., : Influence of heat treatment on the properties of Bi1.8Pb0.2Sr2Ca2Cu3Ox ceramics and Ag-sheathed tapes Physica C 235-240 (1994) 3441.

 

Fröhlich, K., Weiss, F., Boursier, D., Senateur, J., : Superconducting properties of YBa2Cu3O7 films prepared by aerosol MOCVD Physica C 235-240 (1994) 659.

 

Fröhlich, K., Machajdík, D., Weiss, F., Bochu, B., : Thin epitaxial CeO2 films prepared by aerosol MOCVD Materials Lett. 21 (1994) 377.

 

Gömöry, F., Lobotka, P., Fröhlich, K., : Variable temperature insert for AC susceptiibility measurements at AC field amplitude up to 0.1T Cryogenics 34 (1994) 837.

 

Chenevier, B., Marsden, A., Weiss, F., Machajdík, D., Fröhlich, K., : X-ray diffraction analysis of YBCO thin films synthesized by aerosol MOCVD Physica C 235-240 (1994) 657.

 

  • 1993
Gömöry, F., Fröhlich, K., Šouc, J., Kováč, P., Tarenkov, V., : Current-carrying capacity of different high Tc superconductors compared by jt=const lines. In: EUCAS 93. Ed. H.C.Freyhardt. Oberursel: DGM, 1993. P. 771.

 

Šouc, J., Fröhlich, K., : Preparation of the YBaCuO thin films by MOCVD method. In: 7th Czecho-Slovak Conf. Thin Films. Ed.: V.Tvarožek. Lipt. Mikuláš: 1993. P. 59.

 

Weiss, F., Fröhlich, K., Haase, R., Labeau, M., Selbmann, D., Senateur, J., Thomas, O., : Preparation of YBa2Cu3O7 films by low pressure MOCVD using liquid solution sources J. de Physique IV, C3 (1993) 321.

 

Fedorko, P., Skákalová, V., Fröhlich, K., Foltin, O., Annus, J., : Pressure relaxation of the dc conductivity and optical absorption spectra in doped polypyrrole Mater. Sci Forum 122 (1993) 99.

 

Fröhlich, K., Šouc, J., Machajdík, D., Pochaba, I., Kliment, V., : Properties of thin superconducting YBa2Cu3O7-x films. In: 7th Czecho-Slovak Conf. Thin Films. Ed.: V.Tvarožek. Lipt. Mikuláš: 1993. P. 85.

 

Fröhlich, K., Šouc, J., Machajdík, D., Pochaba, I., Gömöry, F., Kliment, V., : Properties of YBaCuO thin films prepared by MOCVD technique with post-deposition annealing. In: EUCAS 93. Ed. H.C.Freyhardt. Oberursel: DGM, 1993. P. 395.

 

Weiss, F., Delabouglise, G., Lebedev, O., Fröhlich, K., Mossang, E., Senateur, J., Thomas, O., : Transport critical current in MOCVD YBa2Cu3O7-x thin films using a pulse technique J. Alloys and Compounds 195 (1993) 475.

 

Weiss, F., Fröhlich, K., Haase, R., Labeau, M., Selbmann, D., Senateur, J., Thomas, O., : YBa2Cu3O7 films prepared by aerosol MOCVD. In: EUCAS 93. Ed. H.C.Freyhardt. Oberursel: DGM, 1993. P. 403.

 

  • 1992
Šouc, J., Fröhlich, K., Machajdík, D., : Characterization of the thin YBaCuO superconducting films deposited on the MgO and SrTiO3 single crystals by MO CVD method using fluorocarbon-based precursor. In: Cryogenics 92. Brno: ČS VTS 1992. P. 159.

 

Fröhlich, K., Šouc, J., Machajdík, D., Vávra, I., : Characterization of thin superconducting YBa2Cu3O7-x films prepared by MO CVD deposition Mater. Sci Engn. B 14 (1992) 43.

 

Fröhlich, K., Šouc, J., Chromik, Š., Machajdík, D., : MO CVD of YBa2Cu3O7-x thin films using Ba Flourocarbon-based precursor Physica C 202 (1992) 121.

 

Park, J., Wattiaux, A., Grenier, J., Fröhlich, K., Dordor, P., Peuchard, M., Hagenmuller, P., : Preparation and characterization of highly densified YBa2Cu3O7- ceramics used for electrochemical oxidation, Zeitschrift für Anorg. Algemeine Chemie 608 (1992) 153.

 

  • 1991
Fröhlich, K., Rosová, A., Nganga, L., Chaminade, J., Dordor, P., : A.c. susceptibility characterization of as grown YBa2Cu3O7-x single crystals Solid State Comm. 80 (1991) 267.

 

Fröhlich, K., Gömöry, F., Lobotka, P., Rosová, A., : A.C. susceptibility study of YBa2Cu3O7-x single crystals. In: 2nd Czechoslov.-Italian Symp. Supercond. Bratislava: IEE SAS 1991. P. 47.

 

Šouc, J., Machajdík, D., Šmatko, V., Štrbik, V., Fröhlich, K., Hríb, Š., Štefánik, S., Kordoš, P., Ivan, J., : Preparation and properties of Ba-deficient superconducting thin Y-Ba-Cu-O films J. Crystal Growth 107 (1991) 710.

 

Šouc, J., Fröhlich, K., Bukovenová, V., Machajdík, D., Šmatko, V., Chromik, Š., Kliment, V., : Preparation of thin YBa2Cu3O7-x films by MOCVD method. In: 2nd Czechoslov.-Italian Symp. Supercond. Bratislava: IEE SAS 1991. P. 18.

 

Šouc, J., Fröhlich, K., Machajdík, D., Vávra, I., Chromik, Š., Kliment, V., : Properties of YBa2Cu3O7-x MOCVD prepared thin films. In: 6th Inter. Symp. Weak Supercond. Eds. Š.Beňačka et al. Singapore: World Sci Publ. 1991. P. 25.

 

Hlásnik, I., Kokavec, J., Fröhlich, K., Janšák, L., : Static and dynamic characteristics of Nb3Ge layers for rapid superconducting power switches Cryogenics 31 (1991) 590.

 

  • 1990
Heintz, J., Magro, C., Fröhlich, K., Dordor, P., Bonnet, J., : Analysis of critical current density limitations in YBa2Cu3O7-x sin tered at low temperature European J. Solid State Inorg. Chemie 27 (1990) 703.

 

Nganga, L., Hung, P., Chaminade, J., Dordor, P., Fröhlich, K., Jergel, M., : Influence of annealing under oxygen on the chemical and superconducting properties of YBa2Cu3Ox single crystals J. Less-Common Metals 164-165 (1990) 208.

 

Choy, J., Kim, S., Park, J., Fröhlich, K., Dordor, P., Grenier, J., : Inter- and intra-granular critical currents in Bi1.4Pb0.6Sr2Ca2Cu3.6Ox superconducting oxid, Bull. Korean Chem. Soc. 11 (1990) 560.

 

  • 1989
Gömöry, F., Takács, S., Lobotka, P., Fröhlich, K., Plecháček, V., : AC magnetization of high Tc superconductors at low superimposed DC fields Physica C 160 (1989) 1.

 

Fröhlich, K., Melišek, T., : Critical currents and scaling law in CVD prepared Nb3Ge superconductor alloyed with Al Cryogenics 29 (1989) 736.

 

Fröhlich, K., Machajdík, D., Zaťko, B., Rosová, A., Takács, S., : Effects of deposition temperature on properties of CVD prepared Nb3Ge superconductor Czechosl. J. Phys. 39 (1989) 196.

 

Kováč, P., Fröhlich, K., : Porovnanie možnosti použitia Nb3Sn a Nb3Ge v silných magnetických poliach, Elektrotechn. časopis 40 (1989) 255.

 

  • 1988
Fröhlich, K., Šouc, J., : Kritické parametre supravodiča Nb3Ge legovaného Ti. In: Kryogenika ’88. Ústí nad Labem: DT ČSVTS 1988. S.101.

 

  • 1987
Černuško, V., Jergel, M., Fröhlich, K., Polák, M., : A small Nb3Ge test solenoid IEEE Trans. Magnetics 23 (1987) 577.

 

Fröhlich, K., Rosová, A., : Elektrické vlastnosti supravodivých vrstiev Nb3Ge pripravených metódou CVD. In: 6. čs. konf. o tenkých vrstvách 1987. Ed. Z.Hájek. Praha: JČSMF 1987. S. 192.

 

Fröhlich, K., : Chemical vapour deposition of superconducting Nb3Ge controlled by diffusion in the gas phase Thin Solid Films 150 (1987) 311.

 

  • 1986
Fröhlich, K., Melišek, T., Černuško, V., : Scaling law for pinning forces in superconducting Nb3Ge compound prepared by chemical vapor-deposition Phys. Low Temper. 12 (1986) 563.

 

  • 1984
Černuško, V., Fröhlich, K., Jergel, M., Machajdík, D., Tarnovská, M., : Nb3Ge – perspektívny technický supravodič. In: Kryogenika 84. Ed. T. Klajbanová. Bratislava: ČS VTS 1984. S. 134.

 

Fröhlich, K., Tarnovská, M., Černuško, V., Lendel, A., : Príprava krátkych vzoriek supravodiča Nb3Ge metodou CVD, Elektrotechn. časopis 35 (1984) 817.

 

Černuško, V., Fröhlich, K., Jergel, M., Machajdík, D., Tarnovská, M., Fedorov, V., Cheremnykh, P., : Properties of Nb3Ge tape superconductor prepared by CVD method J. de Physique 45 (1984) C1-429.

 

  • 1982
Fröhlich, K., Machajdík, D., Beňačka, Š., Černuško, V., : On the Tc measurement of Nb3Ge superconductors Acta Physica Hungarica 53 (1982) 419.

 

  • 1981
Černuško, V., Fröhlich, K., Machajdík, D., Jergel, M., : Development of long Nb3Ge tape with Tc above 20K IEEE Trans. Magnet. 17 (1981) 2051.