Ing. Marian MORVIC, CSc.

2008

Hasenöhrl, S., Kučera, M., Morvic, M., and Novák, J.: OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor. In: ASDAM 2008. The 7th Inter. Conf. Advanced Semicond. Devices Microsyst. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 111-114.

2007

Hasenöhrl, S., Kučera, M., Morvic, M., and Novák, J.: Manganese incorporation during the OMVPE growth of GaAs. In: 12th European Workshop on Metalorganic Vapour Phase Epitaxy – EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 117-120.

2005

Morvic, M. and Betko, J.: Planar Hall effect in Hall sensors made from InP/InGaAs heterostructure, Sensors Actuators A 120 (2005) 130-133.

Serényi, M., Betko, J., Nemcsics, Á., Khanh, N.Q., Basa, D.K., and Morvic, M.: Study on the RF sputtered hydrogenated amorphous silicon–germanium thin films, Microelectr. Reliability 45 (2005) 1252.

2004

Hasenöhrl, S., Betko, J., Morvic, M., Novák, J., and Fedor, J.: Resistivity and mobility in ordered InGaP grown by MOVPE, Physica Status Solidi (c) 1 (2004) 382-387.

Morvic, M. and Betko, J.: Planar Hall effect and magnetoresistance in Hall sensors. In: ASDAM 2004. Piscataway: IEEE 2004. S. 263-266.

Kordoš, P., Morvic, M., Betko, J., Novák, J., Flynn, J., and Brandes, G.: Conductivity and Hall effect of freestanding highly-resistive epitaxial GaN:Fe substrates, Applied Phys. Lett. 85 (2004) 5616-5620.

2003

Hasenöhrl, S., Novák, J., Kúdela, R., Betko, J., Morvic, M., and Fedor, J.: Anisotropy in tran-sport properties of ordered strained InGaP, J. of Crystal Growth 248 (2003) 369.

Serenyi, M., Betko, J., Nemcsics, Khahn N.Q., and Morvic, M.: Fabrication of a-SiGe structure by RF sputtering for solar cell purpose, Physica Stat. Solidi (c) 0 (2003) 857-861.

Hasenöhrl, S., Betko, J., Morvic, M., Novák, J., and Fedor, J.: Temperature dependent magnetoresistance characterization of ordered strained InGaP grown by MOVPE. In: Booklet of Extended Abstracts from 10th Int. Workshop on Metal-Organic Vapour Phase Epitaxy – EW MOVPE X. Univ. of Lecce 2003. P. 163.

2002

Morvic, M., Boháček, P., Betko, J., Dubecký, F., Huran, J., and Sekáčová, M.: Electrical properties of semi-insulating GaAs irradiated with neutrons, Nuclear Instr. and Methods in Phys. Res. B 197 (2002) 240-246.

Boháček, P., Morvic, M., Betko, J., Dubecký, F., and Huran, J.: Electrical properties of semi-insulating GaAs irradiated with neutrons. In: SIMC-XII-2002. Piscataway: IEEE 2002. P. 31-34.

2000

Kordoš, P., Javorka, P., Morvic, M., Betko, J., Van Hove, J.M., Wowchak, A.M., and Chow, P.P.: Conductivity and Hall-effect in highly resistive GaN layers, Applied Phys. Letters 76 (2000) 3762-3764.

Betko, J. and Morvic, M.: Indication of mixed conductivity in III-V semiconductors using conductivity, Hall effect and magnetoresistance measurements, Physica Status Solidi A 181 (2000) 169-175.

Kordoš, P., Morvic, M., Betko, J., Van Hove, J.M., Wowchak, A.M., and Chow, P.P.: Conductivity and Hall effect characterization of highly resestive molecular-beam epitaxial GaN layers, J. of Applied Physics 88 (2000) 5821-5826.

Morvic, M.: On the measurement of high resistance semiconductors by the van der Pauw method. In: ASDAM 2000 : 3rd Int. EuroConf. on Advanced Semiconductor Devices and Microsystems. Piscataway, IEEE 2000. P. 327-330.

Kúdela, R., Morvic, M., Kučera, M., Kičin, S., and Novák, J.:Electrical properties of 2DEG in the GaAs/InGaP based structures. In: ASDAM 2000 : 3 rd Int. EuroConf. on Advanced Semiconductor Devices and Microsystems. Piscataway, IEEE 2000. P. 223-226.

Boháček, P., Morvic, M., Betko, J., Dubecký, F., and Huran, J.: Study of semi-insulating GaAs irradiated with neutrons using conductivity, Hall effect, and magnetoresistance measurement. In: APCOM 2000. Proc. of the 6th Int. Workshop on Applied Phys. and Condensed Matter. Eds. J.Mudro ň, P.Šutta, J.Vajda, D.Barančok. Liptovský Mikuláš, Military Academy 2000. P. 129.

Kordos, P., Alam, A., Betko, J., Chow, P.P., Heuken, M., Javorka, P., Kocan, M., Marso, M., Morvic, M., and Van Hove, J.M.: Material and device issues of GaN-based HEMTs. In: 8th IEEE Int. Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. IEEE 2000. P. 61-66.

Kordoš, P., Betko, J., and Morvic, M.: Electrical transport in highly resistive GaN layers. In: Institut für Schicht- und Ionentechnik 2000. Jülich: Forschungszentrum, 2000. P. 28.

1999

Betko, J., Morvic, M., Novák, J., Förster, A., and Kordoš, P.: Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs, J. of Applied Physics 86 (1999) 6243-6248.

1998

Morvic, M., Betko, J., Novák, J., Kordoš, P., and Förster, A.: On the hopping and band conductivity in molecular beam epitaxial low-temperature grown GaAs, Physica Status Solidi (b) 205 (1998) 125.

Morvic, M., Betko, J., Hasenöhrl, S., Gregušová, D., Cambel, V., Eliáš, P., and Novák, J.: On quantum Hall resistance and Shubnikov de Haas effect measurements on InP/InGaAs structures. In: Heterostructure Epitaxy and Devices – HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht, Kluwer Acad Pub 1998. P. 285.

1997

Malacký, L., Kúdela, R., Morvic, M., Novák, J., and Wehman, H.: Properties of silicon-pulse-doped InGaP layers grown by LP MOCVD, Materials Sci & Engn. B 44 (1997) 33.

  • Novák, J., Kučera, M., Morvic, M., Betko, J., Förster, A., and Kordoš, P.: Characterization of low-temperature GaAs by galvanomagnetic and photoluminiscence measurements, Materials Sci & Engn. B 44 (1997) 341.

    1996

    Malacký, L., Kúdela, R., Morvic, M ., Černiansky, M., Peiner, E., and Wehmann, H.H.: Deltadoped InGaP grown by low pressure metallorganic chemical vapour deposition, Applied Physics Letters 69 (1996) 1731.

    Betko, J., Morvic, M., Novák, J., Förster, A., and Kordoš, P.: Hall mobility analysis in low-teperature-grown molecular beam epitxial GaAs, Applied Physics Letters 69 (1996) 2563.

    Novák, J., Morvic, M., Betko, J., Förster, A., and Kordoš, P.: Wet chemical separation of low-temperature GaAs layes from their GaAs substrate, Materials Sci & Engn. B 40 (1996) 58.

    Dubecký, F., Betko, J., Morvic, M., Darm o, J., Bešše, I., Hrubčín, L., Hlaváč, S., Benovič, M., Pelfer, P.G., Gombia, E., and Mosca, R.: Neutron irradiated undoped SI GaAs: I.Galvanomagnetic. I-V, PC and alpha detection study. In: 3 rd Int. Workshop on GaAs and Related Compounds. San Miniato 1995. Ed. P.G.Pelfer. Singapore, World Sci. 1996. P. 152-157.

    Morvic, M., Betko, J., Novák, J., Förster, A., and Kordoš, P.: Transport properties of MBE GaAs layers grown at 420oC. In : Heterostructure Epitaxy and Devices. Eds. J. Novák and A. Schlachetzki. NATO ASI Series 3, High Technology 11. Dordrecht, Kluwer Academic Publ. 1996. P. 197.

    1995

    Kordoš, P., Förster, A., Betko, J., Morvic, M., and Novák, J.: Semi-insulating GaAs layers grown by molecular-beam epitaxy, Applied Phys. Lett. 67 (1995) 983.

    1994

    Morvic, M . and Kučera, M.: Photoreflectance as a method for determination of In xGa1-x composition, Elektrotechn. časopis 45 (1994) 249.

    1989

    Novák, J., Kuliffayová, M., Morvic, M., and Kordoš, P.: Growth and properties of low-doped In0.53Ga0.47As LPE layers using rare earth oxides, J. of Crystal Growth 96 (1989) 645.

    Hasenöhrl, S., Novák, J. a Morvic, M.: Zn difussion in GaInAs. In: Proc. 3rd Conf. on Physics and Technology of GaAs and Other III-V Semiconductors. Ed. P.Kordoš. Zürich, Trans. Tech. Publ. 1989. P. 235.

    Kúdela, R. and Morvic, M.: Observation of immiscibility in InGaAsP substrates. In: Proc. 3rd Conf. on Physics and Technology of GaAs and Other III-V Semiconductors. Ed. P.Kordoš. Zürich, Trans. Tech. Publ. 1989. P. 121.

    Kuliffayová, M., Novák, J., Morvic, M., and Hasenöhrl, S.: Preparation of the undoped InGaAs/InP LPE layers. In: Proc. 3rd Conf. on Physics and Technology of GaAs and Other III-V Semiconductors. Ed. P.Kordoš. Zürich, Trans. Tech. Publ. 1989. P. 227.

    Morvic, M., Novák, J., Kúdela, R., and Malacký, L.: Planar detector-construction and properties. In: Proc. 3rd Conf. on Physics and Technology of GaAs and Other III-V Semiconductors. Ed. P.Kordoš. Zürich, Trans. Tech. Publ. 1989. P. 319.

    1987

    Thurzo, I., Pinčík, E., Morvic, M., and Görög, I.: Observation of Fermi level pinning at the GaAs-plasma-oxide interface, Semicond. Sci & Techn. 2 (1987) 636.

    Kúdela, R. and Morvic, M.: Phase diagram and LPE growth of InGaAsP on GaAs, J. of Crystal Growth 82 (1987) 717.

    Malacký, L., Novák, J., Morvic, M., and Kordoš, P.: Study of dark current in Ga1-xInxAs/GaAs diodes, Crystal Properties & Preparation 12 (1987) 303.

    Novák, J., Malacký, L., Morvic, M., and Kordoš, P.: Dependence of InGaAs photodiode characteristics on the composition of the ternary, Crystal Properties & Preparation 12 (1987) 307.

    1986

    Kúdela, R. and Morvic, M.: Immiscibility in In1-xGaxP1-xAsy lattice matched to GaAs, Physica Status Solidi A 95 (1986) K1.

    Kordoš, P. a Morvic, M .: Fotodiody dlja volokonn-optičeskich system 1,3mkm, Zarubežnaja elektronika 11 (1986) 80.

    Kolchanova, N.M., Mikhailova, M.P., Reschikov, M.A., Morvic, M., Dubecký, F., and Kordoš, P.: High-sensitive GaAs photodetector in the range of 0.6+1.6µ. In: 12th Int. Symposium of the Technical Committee on Photon-Detectors. Ed. J.Schanda. Budapešť, OMIKK-TE CHNOINFORM 1986. P. 168.

    1984

    Kúdela, R., Benč, V., Morvic, M., Novák, J., and Kordoš, P.: Photodiodes on InGaAs/InP and InGaAsP/InP structures. In: Photovoltaic and Optpelectronic Processes. Bukurest 1984. P. 113.

    1983

    Konakova, R.V., Tchorik, Ju.A., Zaitsevskij, I.L., Kordoš, P., Morvic, M., and Červenák, J .: The influence of stress on the fine structure of Schottky diode V-A characteristics in the breakdown region, Physica Status Solidi (a) 77 (1983) K125.

    Konakova, R.V., Tchorik, Ju.A., Zaitsevskij, I.L., Benč, V., Kordoš, P., Morvic, M., and Červenák, J .: Electrical characteristics of GaAs LPE Schottky diodes, Crystal Research & Techn. 18 (1983) 1451.

    Tchorik, Ju.A., Konakova, R.V., Jevstignejev, A.M., Krasiko, A.N., Kordoš, P., Morvic, M . a Červenák, J.: Vlijanije ionizurujuščej radiacii na spektry poverchnostno-bariernovo elektrootrayenija AlxGa1-xAs, Poverchnost 2 (1983) 12.

    1982

    Novák, J., Morvic, M., and Kordoš, P.: High gain (p) AlGaAs-(n) GaAs heterojunction avalanele photodiodes, Solid State Electr. 25 (1982) 82.

    1981

    Konakova, R.V., Tchorik, Y.A., Zajcevskij, I.L., Kordoš, P., Morvic, M ., and Červenák, J.: Avalanche breakdoron pecularities of Al xGa1-xAs IMPATT diodes, Physica Status Solidi A 63 (1981) K163.

    1977

    Hrivnák, L., Morvic, M., and Betko, J.: Current-voltage characteristics of GaAs p-i-n and n-i-n diodes, Solid State Electronics 20 (1977) 417.

    1973

    Betko, J., Boguslavskij, I.V., Hlásnik, I., Žernin, J.D. Morvic, M., Pol ák, M., and Štofanik, F.: Izmerenije vektora magnitnoj indukcii pri pomošči trech datčikov Cholla. Deponirovannaja publ. SÚJV B2-13-7464. Dubna 1973.

    1971

    Morvic, M.: Phys. Status Solidi A 5 (1971) K23.

    Betko, J. and Morvic, M.: On the frequency response of Ge-magnetodiodes, Solid State Electronics 14 (1971) 1059.

    1968

    Měřínsky, K., Betko, J., Morvic, M., and Kordoš, P.: Über dieelektrischen eigenschaften von Ge-Magnetodioden, Solid State Electronics 11 (1968) 187.

    1967

    Betko, J. and Morvic, M.: p-n junction structures. In: Proc. Symp. on Test Methods and Measur. of Semicond. Devices. Budapest 1967. P. 501.