Ing. Milan ŤAPAJNA, PhD.

  • 2019

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

  • 2018

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dinesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A  215 (2018) 1800090.

Fröhlich, K., Kundrata, I., Blaho, M., Precner, M., Ťapajna, M., Klimo, M., Šuch, O.,  and Škvarek, O.: Performance of HfOx– and TaOx-based resistive switching structures in circuits for min and max functions implementation, MRS Adv. 3 (2018) Iss. 59, 3427-3432.

Mikolášek, M., Fröhlich, K., Hušeková, K., Racko, J., Rehacek, V., Chymo, F., Ťapajna, M., and Harmatha, L.: Silicon based MIS photoanode for water oxidation: a comparison of RuO2 and Ni Schottky contacts, Applied Surface Sci 461 (2018) 48-53.

Fröhlich, K., Kundrata, I., Blaho, M., Precner, M., Ťapajna, M., Klimo, M., Šuch, O., and Škvarek, O.: Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions, J. Applied Phys. 124 (2018) 152109.

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, , Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

Ťapajna, M., Vincze, A., Noga, P., Dobrovodsky, J., Šagátová, A., Hasenöhrl, S., Gregušová, D., and Kuzmík, J.: Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 141-144. (VEGA 2/0012/18, APVV 14-0716, ITMS 26220220179)

  • 2017
Blaho, M., Gregušová, D., Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., Kuzmík, J., : Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs. Applied Phys. Lett. 111 (2017) 033506.

 

Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A., : Current conduction mechanism and electrical break-down in InN grown on GaN. Applied Phys. Lett. 110 (2017) 232103.

 

Brytavskyi, I., Gregušová, D., Ťapajna, M., Stoklas, R., Blaho, M., Seifertová, A., Hasenöhrl, S., Dobročka, E., Kuzmík, J., : Hafnium oxide as a promising material for gate isolation in GaN-based MOS HFETs In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 207-210.

 

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pecz, B., Brunner, F., Kuzmík, J., : Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties. Applied Surface Sci 426 (2017) 656-661.

 

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pecz, B., Kuzmík, J., : Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density. J. Vacuum Sci Technol. B 35 (2017) 01A107.

 

Harmatha, L., Mikolášek, M., Racko, J., Fröhlich, K., Ťapajna, M., Benko, P., : Silicon based MOS structures with a Ti02 layer grown by atomic layer deposition for solar fuel generation In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 263-266.

 

  • 2016
Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., Kuzmík, J., : DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12

 

Ťapajna, M., Hušeková, K., Pohorelec, O., Válik, L., Haščík, Š., Gucmann, F., Fröhlich, K., Gregušová, D., Kuzmík, J., : Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown Al2O3 gate dielectric In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 207-211.

 

Ťapajna, M., Hilt, O., Bahat-Triedel, E., Würfl, H., Kuzmík, J., : Gate reliability investigation in normally-off p-type-gan cap/AlGaN/GaN HEMTs under forward bias stress. IEEE Electron Device Lett. 37 (2016) 385 – 388.

 

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Priesol, J., Kuzmík, J., : Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 177-180.

 

Mikolášek, M., Racko, J., Řeháček, V., Harmatha, L., Ťapajna, M., Fröhlich, K., : Silicon based metal-insulator-semiconductor structures for photoelectrochemical solar fuel generation In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 45-48.

 

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Carlin, J., Grandjean, N., Konstantinidis, G., Kuzmík, J., : Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics. Semicond. Sci Technol. 31 (2016) 065011.

 

Ťapajna, M., Válik, L., Gregušová, D., Fröhlich, K., Gucmann, F., Hashizume, T., Kuzmík, J., : Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 1-4.

 

  • 2015
Ťapajna, M., Hilt, O., Bahat-Triedel, E., Würfl, H., Kuzmík, J., : Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors. Applied Phys. Lett. 107 (2015) 193506

 

Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J., Grandjean, N., Kuzmík, J., : Self-aligned normally-off metal-oxide-semiconductor n+++GaN/InAlN/GaN high-electron mobility transistors. Phys. Status Solidi A 112 (2015) 1086-1090.

 

Gregušová, D., Kúdela, R., Gucmann, F., Stoklas, R., Blaho, M., Ťapajna, M., Kordoš, P., Fröhlich, K., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 58.. (VEGA 2/0105/13).

 

Molnár, M., Donoval, D., Chvála, A., Marek, J., Príbytný, P., Ťapajna, M., Hilt, O., Brunner, F., Würfl, H., Kuzmík, J., : Thermal management in high-power GaN HEMTs: investigation of selected thermal issues by 3-D simulation approach In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 136-139. (Contribution: 40, 14, 10, 10, 10, 5, 2, 2, 5).

 

  • 2014
Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmík, J., : Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth. Applied Phys. Lett. 104 (2014) 013506.

 

Kuzmík, J., Jurkovič, M., Gregušová, D., Ťapajna, M., Brunner, F., Cho, E., Meneghesso, G., Würfl, H., :Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown. J. Applied Phys. 115 (2014) 164504.

 

Ťapajna, M., Killat, N., Palankovski, V., Gregušová, D., Čičo, K., Carlin, J., Grandjean, N., Kuball, M., Kuzmík, J., : Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors,. IEEE Trans. Electron Dev. 61 (2014) 2793-2801.

 

Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E., Hashizume, T., Kuzmík, J., : Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations. J. Applied Phys. 116 (2014) 104501.

 

Ťapajna, M., Válik, L., Kotara, P., Zhytnytska, R., Brunner, F., Hilt, O., Bahat-Triedel, E., Würfl, H., Kuzmík, J., : Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 121-124.

 

Kuzmík, J., Ťapajna, M., Válik, L., Molnár, M., Donoval, D., Fleury, C., Pogany, D., Strasser, G., Hilt, O., Brunner, F., Würfl, H., : Self-heating in GaN transistors designed for high-power operation,. IEEE Trans. Electron Dev. 61 (2014) 3429-3434.

 

  • 2013
Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E., Kuzmík, J., : Bulk and interface trapping in the gate dielectric of GaN based metal–oxide–semiconductor high-electron mobility transistors. Applied Phys. Lett. 102 (2013) 243509.

 

Ťapajna, M., Kuzmík, J., : Control of threshold voltage in GaN based metal–oxide–semiconductor high-electron mobility transistors towards the normally-off operation. Japan. J. Applied Phys. 52 (2013) 08JN08.

 

  • 2012
Ťapajna, M., Kuzmík, J., : A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors. Applied Phys. Lett. 100 (2012) 113509.

 

Válik, L., Ťapajna, M., Gucmann, F., Fedor, J., Šiffalovič, P., Fröhlich, K., : Distribution of fixed charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 227-230.

 

Ťapajna, M., Gregušová, D., Čičo, K., Fedor, J., Carlin, J., Grandjean, N., Killat, N., Kuball, M., Kuzmík, J., : Early stage degradation of InAlN/GaN HEMTs during electrical stress. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 7-10.

 

Moereke, J., Ťapajna, M., Uren, M., Pei, Y., Mishra, U., Kuball, M., : Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability. Phys. Status Solidi A 209 (2012) 2646-2652.

 

Ťapajna, M., Killat, N., Moereke, J., Paskova, T., Evans, K., Leach, J., Li, X., Ozgur, U., Morkoc, H., Chabak, K., Crespo, A., Gillespie, J., Fitch, R., Kossler, M., Walker, D., Trejo, M., Via, G., Blevins, J., Kuball, M., : Non-arrhenius degradation of AlGaN/GaN HEMTs grown on bulk GaN substrates. IEEE Electron Device Lett. 33 (2012) 1126-1128.

 

Ťapajna, M., Jimenez, J., Kuball, M., : On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics. Phys. Status Solidi A 209 (2012) 386-389.

 

Ťapajna, M., Killat, N., Chowdhury, U., Jimenez, J., Kuball, M., : The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability. Microelectr. Reliab. 52 (2012) 29-32.(not IEE SAS).

 

Fröhlich, K., Hudec, B., Ťapajna, M., Hušeková, K., Rosová, A., Eliáš, P., Aarik, J., Rammula, R., Kasikov, A., Arroval, T., Aarik, L., Murakami, K., Rommel, M., Bauer, A., : TiO2-based metal-insulator-metal structures for future DRAM storage capacitors ECS Transactions 50 (2012) 79-87.

 

  • 2011
Kuball, M., Ťapajna, M., Simms, R., Faqir, M., Mishra, U., : AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. Microelectr. Reliab. 51 (2011) 195.(not IEE SAS).

 

Čičo, K., Hušeková, K., Ťapajna, M., Gregušová, D., Stoklas, R., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., Fröhlich, K., : Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics. J. Vacuum Sci Technol. B 29 (2011) 01A808.

 

Killat, N., Ťapajna, M., Faqir, M., Palacios, T., Kuball, M., : Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier. Electronics Lett. 47 (2011) 405-U75. (not IEE SAS).

 

Ťapajna, M., Kaun, S., Wong, M., Gao, F., Palacios, T., Mishra, U., Speck, J., Kuball, M., : Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors. Applied Phys. Lett. 99 (2011) 223501.(not IEE SAS).

 

Paskaleva, A., Ťapajna, M., Dobročka, E., Hušeková, K., Atanassova, E., Fröhlich, K., : Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks. Applied Surface Sci 257 (2011) 7876-7880

 

  • 2010
Gong, Y., Ťapajna, M., Bakalova, S., Zhang, Y., Edgar, J., Dudley, M., Hopkins, M., Kuball, M., :Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device. Applied Phys. Lett. 96 (2010) 223506.(not IEE SAS).

 

Ťapajna, M., Paskaleva, A., Atanassova, E., Dobročka, E., Hušeková, K., Fröhlich, K., : Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures Semicond. Sci Technol. 25 (2010) 075007.

 

Ťapajna, M., Simms, R., Faqir, M., Kuball, M., Pei, Y., Mishra, U., : Identification of electronic traps in AlGaN/GaN HEMTs using UV light-assisted trapping analysis. In: Inter. Reliability Phys. Symp. (2010) P. 152- 155. (Not IEE SAS).

 

Ťapajna, M., Mishra, U., Kuball, M., : Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress. Applied Phys. Lett. 97 (2010) 023503. (not IEE SAS).

 

Ťapajna, M., Simms, R., Pei, Y., Mishra, U., Kuball, M., : Integrated optical and electrical analysis: identifying location and properties of traps in AlGaN/GaN HEMTs during electrical stress. IEEE Electron Device Lett. 31 (2010) 662. (not IEE SAS).

 

Ťapajna, M., Simms, R., Pei, Y., Mishra, U., Kuball, M., : On the identification of trap location in AlGaN/GaN HEMTs during electrical stress. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 119-122. (Not IEE SAS).

 

  • 2009
Fröhlich, K., Aarik, J., Ťapajna, M., Rosová, A., Aidla, A., Dobročka, E., Hušeková, K., : Epitaxial growth of high-κ TiO2 rutile films on RuO2 electrodes. J. Vacuum Sci Technol. B 27 (2009) 266-270.

 

Ťapajna, M., Kuzmík, J., Čičo, K., Pogany, D., Pozzovivo, G., Strasser, G., Abermann, S., Bertagnolli, E., Carlin, J., Grandjean, N., Fröhlich, K., : Interface states and trapping effects in Al2O3- and ZrO2/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures. Japan. J. Applied Phys. 48 (2009) 090201.

 

Harmatha, L., Ballo, P., Ťapajna, M., Csabay, O., Nemec, M., : The effect of high temperature annealing on the properties of MOS structures on nitrogen doped silicon. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 156-159.

 

Fröhlich, K., Vincze, A., Dobročka, E., Hušeková, K., Čičo, K., Uherek, F., Lupták, R., Ťapajna, M., Machajdík, D., : Thermal stability of GdScO3 dielectric films grown on Si and InAlN/GaN substrates, Mater. Res. Soc. Symp. Proc. 1155 (2009) C09-03.

 

Ťapajna, M., Čičo, K., Kuzmík, J., Pogany, D., Pozzovivo, G., Strasser, G., Carlin, J., Grandjean, N., Fröhlich, K., : Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures. Semicond. Sci Technol. 24 (2009) 035008.

 

  • 2008
Paskaleva, A., Ťapajna, M., Atanassova, E., Fröhlich, K., Vincze, A., Dobročka, E., : Effect of Ti doping on Ta2O5 stacks with Ru and Al gates. Applied Surface Sci 254 (2008) 5879-5885.

 

Ťapajna, M., Dobročka, E., Paskaleva, A., Hušeková, K., Atanassova, E., Fröhlich, K., : Electrical characterization of Ru- and RuO2/Ta2O5 gate stacks for nanoscale DRAM technology. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 267-270.

 

Fröhlich, K., Ťapajna, M., Rosová, A., Dobročka, E., Hušeková, K., Aarik, J., Aidla, A., : Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes. Electrochem. Solid-State Lett. 11 (2008) G19-G21.

 

Hudec, B., Ťapajna, M., Hušeková, K., Aarik, J., Aidla, A., Fröhlich, K., : Low equivalent oxide thickness metal/insulator/metal structures for DRAM applications. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 123-126.

 

Benko, P., Ťapajna, M., Paskaleva, A., Atanassova, E., Fröhlich, K., : Measurement of electrical properties on MOS structure with Ta2O5 gate dielectric layer and Ru-based gate electrodes. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 28-31.

 

Ťapajna, M., Rosová, A., Dobročka, E., Štrbik, V., Gaži, Š., Fröhlich, K., Benko, P., Harmatha, L., Manke, C., Baumann, P., : Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes. J. Applied Phys. 103 (2008) 073702.

 

  • 2007
Ťapajna, M., Rosová, A., Hušeková, K., Roozeboom, F., Dobročka, E., Fröhlich, K., : Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1-xOy ultrathin gate dielectrics gated with Ru electrode. Microelectr. Engn. 84 (2007) 2366-2369.

 

Pozzovivo, G., Kuzmík, J., Golka, K., Schrenk, W., Strasser, G., Pogany, D., Čičo, K., Ťapajna, M., Fröhlich, K., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., : Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors. Applied Phys. Lett. 91 (2007) 043509.

 

Písečný, P., Harmatha, L., Jakabovič, J., Ťapajna, M., Lupták, R., Čičo, K., : The properties of oxygen plasma annealed La2O3 films for CMOS technology. In: APCOM 2007. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 243-246.

 

Machajdík, D., Kobzev, A., Hušeková, K., Ťapajna, M., Fröhlich, K., Schram, T., : Thermal stability of advanced gate stacks consisting of a Ru electrode and Hf-based gate dielectrics for CMOS technology. Vacuum 81 (2007) 1379-1384.

 

  • 2006
Harmatha, L., Ťapajna, M., Slugeň, V., Ballo, P., Písečný, P., Šik, J., Kögel, G., : Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study. Microelectr. J. 37 (2006) 283-289.

 

Ťapajna, M., Hušeková, K., Machajdík, D., Kobzev, A., Schram, T., Lupták, R., Harmatha, L., Fröhlich, K., :Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology. Microelectr. Engn. 83 (2006) 2412.

 

Fröhlich, K., Espinos, J., Ťapajna, M., Hušeková, K., Lupták, R., : Energy band diagram of the Ru/Hf0.75Si0.25Oy/Si gate stack. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 29-32.

 

Fröhlich, K., Lupták, R., Ťapajna, M., Hušeková, K., Weber, U., Baumann, P., Lindner, J., : Fixed oxide charge in Ru-based chemical vapour deposited high-κ gate stacks In: Defects in high-κ gate dielectric stacks. Ed. E.P. Gusev. Springer 2006. P. 277-286.

 

Manke, C., Boissiere, O., Weber, U., Barbar, G., Baumann, P., Lindner, J., Ťapajna, M., Fröhlich, K., :Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures. Microelectr. Engn. 83 (2006) 2277.

 

Ťapajna, M., Hušeková, K., Fröhlich, K., Dobročka, E., Roozeboom, F., : Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 21-24.

 

Ťapajna, M., Harmatha, L., Hušeková, K., : Measurement of generation parameters on Ru/HfO2/Si MOS capacitor. Solid-State Electr. 50 (2006) 177-180.

 

Franta, M., Rosová, A., Ťapajna, M., Dobročka, E., Fröhlich, K., : Microstructure of HfO2 and HfxSi1-xOy dielectric films prepared on Si for advanced CMOS application. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 47-50.

 

Ťapajna, M., Hušeková, K., Espinos, J., Harmatha, L., Fröhlich, K., : Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high-κ dielectric. Materials Sci Semicond Process. 9 (2006) 969-974.

 

Fröhlich, K., Lupták, R., Hušeková, K., Čičo, K., Ťapajna, M., Weber, U., Baumann, P., Lindner, J., Espinos, J., : Properties of Ru/HfxSi1-xOy/Si metal oxide semiconductor gate stack structures grown by atomic vapor deposition. J. Electrochem. Soc. 153 (2006) F176-F179.

 

Stuchlíková, Ľ., Harmatha, L., Ťapajna, M., Ballo, P., Písečný, P., Benkovič, M., Jakabovič, J., : The effect of rapid thermal annealing on oxygen precipitation in nitrogen doped silicon substrate. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 43-46.

 

  • 2005
Ťapajna, M., Harmatha, L., Fröhlich, K., Hušeková, K., De Gendt, S., Schram, T., : Electrical characterisation of Ru/Hf-based high-k dielectric gate stacks for advanced CMOS technology. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 98-101.

 

Lupták, R., Fröhlich, K., Rosová, A., Hušeková, K., Ťapajna, M., Machajdík, D., Jergel, M., Espinos, J., Mansilla, C., : Growth of gadolinium oxide films for advanced MOS structure. Microelectr. Engn. 80 (2005) 154-157.

 

Ťapajna, M., Harmatha, L., Hušeková, K., Fröhlich, K., : Measurement of generation parameters on Ru/HfO2/Si MOS capacitor, Measurement Sci Rev. 5 (2005) 42.

 

Fröhlich, K., Lupták, R., Hušeková, K., Čičo, K., Ťapajna, M., Weber, U., Baumann, P., Lindner, J., : Properties of Ru/HfxSi1-xOy/SI MOS gate stack structures grown by MOCVD. In: Proc. 207th Electrochemical Soc Meeting. Eds. E.P.Gusev et al. Pennington: The Electrochem. Soc, 2005. P. 339.

 

Lupták, R., Fröhlich, K., Hušeková, K., Ťapajna, M., Machajdík, D., Jergel, M., Espinos, J., Mansilla, C., : Structure and electrical properties of the thin Gd2O3 films. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 200-203.

 

  • 2004
Ťapajna, M., Písečný, P., Lupták, R., Hušeková, K., Fröhlich, K., Harmatha, L., Hooker, J., Roozeboom, F., Jergel, M., : Application of Ru-based gate materials for CMOS technology. Materials Sci Semicond. Process. 7 (2004) 271-276.

 

Ťapajna, M., Harmatha, L., : Determining the generation lifetime in a MOS capacitor using linear sweep techniques, Solid-State Electr. 48 (2004) 2339-2342. (Not IEE SAS).

 

Ťapajna, M., Pjenčák, J., Vrbický, A., Harmatha, L., Kúdela, P., : Determining the generation lifetime in a MOS capacitor using linear sweep techniques, J. Electr. Engn. 55 (2004) 239-244. (Not IEE SAS).

 

Fröhlich, K., Hušeková, K., Machajdík, D., Lupták, R., Ťapajna, M., Hooker, J., : Growth and properties of ruthenium based metal gates for pMOS devices. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 163-166.

 

Fröhlich, K., Hušeková, K., Machajdík, D., Lupták, R., Ťapajna, M., Hooker, J., Roozeboom, F., Kobzev, A., Wiemer, C., Ferrari, C., Fanciulli, M., Rossel, C., Cabral, C., : Preparation of SrRuO3 films for advanced CMOS metal gates. Materials Sci Semicond. Process. 7 (2004) 265-269.

 

Ťapajna, M., Písečný, P., Harmatha, L., Fröhlich, K., Hušeková, K., Lupták, R., Hooker, J., Jakabovič, J., : Ruthenium-based gate materials for advanced MOS technology. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 270-273.

 

Ťapajna, M., Čičo, K., Lupták, R., Hušeková, K., Fröhlich, K., Harmatha, L., Hooker, J., Roozeboom, F., : Thermal stability of ruthenium MOS gate electrodes. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 167-170.