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2011
Novák, J., Vávra, I., Hasenöhrl, S., Reiffers, M., Štrichovanec, P., and Magen, C.: Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE, J. Crystal Growth 318 (2011) 576-579.*
2010
Novák, J., Vávra, I., Križanová, Z., Hasenöhrl, S., Šoltýs, J., Reiffers, M., and Štrichovanec, P.: Dependence of the magnetic properties on the surface strain in InMnAs epitaxial structures, Applied Surface Sci 256 (2010) 5672-5675.
2009
Novák, J., Vávra, I., Šoltýs, J., Hasenöhrl, S., Reiffers, M., and Štrichovanec, P.: Effect of nanodimension on the properties of III-V ferromagnetic semiconductors. In: Proc. 17th Conf. Slovak Physicists. Ed. M. Reiffers. Bratislava: Slovak Phys. Soc., 2009. ISBN 978-80-969124-7-6. P. 13-16.
2008
Novák, J., Vávra, I., Hasenöhrl, S., Šoltýs, J., Štrichovanec, P., and Balazsi, K.: Influence of GaAs cap layer on the relaxation of InMnAs dots. In: Proc. 14th Inter. Conf. Applied Phys. Condensed Matter: APCOM 2008. Eds. J. Vajda et al. Bratislava: STU, 2008. ISBN 978-80-227-2902-4. P. 171-174.
2007
Štrichovanec, P., Kúdela, R., Vávra, I., Kováč, J., Šoltýs, J., and Novák, J.: Characterization of corrugated MQW heterostructure prepared on patterned (001) GaAs substrate by MOVPE, Physica Status Solidi c 4 (2007) 1499-1502.
Novák, J., Hasenöhrl, S., Kučera, M., Vávra, I., Štrichovanec, P., Kovác, J., and Vincze, A.: Photoluminiscence and TEM characterization of (AlyGa1-y)1-x InxP layers grown on graded buffers, Physica Status Solidi c 4 (2007) 1503-1507.
Gregušová, D., Kučera, M., Hasenöhrl, S., Vávra, I., Štrichovanec, P., Martaus, J., and Novák, J.: Impact of growth conditions on the spatial non-uniformities of composition in InGaP epitaxial layers, Physica Status Solidi c 4 (2007) 1419-1422.
2006
Štrichovanec, P., Kúdela, R., Vávra, I., and Novák, J.: Characterization of QWIP structures prepared on GaAs-patterned substrates, Microeletr. J. 37 (2006) 888-891.
Novák, J., Štrichovanec, P., Vávra, I., Kúdela, R., and Kučera, M.: Study of the optical and structural properties of multi quantum well structures grown on high-index surfaces, Microelectron. J. 37 (2006) 1515-1518.
Eliáš, P., Štrichovanec, P., Kostič, I., and Novák, J.: Conformal, planarizing and bridging AZ5214-E layers deposited by a `draping` technique on non-planar III-V substrates, J. Micromech. Microengn. 16 (2006) 2608–2617.
Štrichovanec, P., Kúdela, R., Vávra, I., Srnánek, R., and Novák, J.: Dark current of AlGaAs/GaAs n-QWIP prepared on patterned (001) GaAs substrate by MOVPE. In: ASDAM 2006. Proc. 6th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 233-236.
Eliáš, P., Gregušová, D., Štrichovanec, P., Kostič, I., and Novák, J.: Deposition of AZ5214-E layers on non-planar substrates with a “draping” technique. In: ASDAM 2006. Proc. 6th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 97-100.
2005
Štrichovanec, P., Novák, J., Vávra, I., Kúdela, R., Kučera, M., and Šoltýs, J.: QWIP structures prepared on wet-etched non-planar GaAs, Phys. Status Solidi c 2 (2005) 1384-1388.
Štrichovanec, P., Kúdela, R., Vávra, I., Kováč, J., Šoltýs, J., and Novák, J.: QWIP structures prepared on patterned GaAs substrates. In: IXth Inter. Workshop on MOCVD. Lausanne 2005. Book of Extended Abstracts p. D07.
Štrichovanec, P., Kúdela, R., Vávra, I., Kováč, J., and Novák, J.: Electrical and optical properties of QWIP structures grown by MOVPE. In: 14th Inter. Workshop on Heterostructure Technol. (HETECH 05). Sci Program. & Book of Abstracts. Bratislava: ElÚ SAV 2005.
2003
Kúdela, R., Štrichovanec, P., Gregušová, D., Cambel, V., Šoltýs, J., Hasenöhrl, S., Novák, J., Kostič, I., Attolini, G., and Pelosi, C.: MOVPE growth of AlGaAs/GaAs and InGaP/GaAs structures on patterned GaAs substrates. In: Booklet of Extended Abstracts from 10th Int. Workshop on Metal-Organic Vapour Phase Epitaxy – EW MOVPE X. Univ. of Lecce 2003. P. 219.