Ing. Peter ELIÁŠ

  • 2022

Rosová, A., Dobročka, E., Eliáš, P., Hasenöhrl, S., Kučera, M., Gucmann, F., and Kuzmík, J.: In(Ga)N 3D growth on GaN-buffered on-axis and off-axis (0001) sapphire substrates by MOCVD, Nanomater. 12 (2022) 3496.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Kováč, J.jr., and Kováč, J.: Investigation of a nanostructured GaP/MoS2 p-n heterojunction photodiode, AIP Adv. 12 (2022) 065004.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Kováč, J.jr., and Kováč, J.: MOVPE growth of edge rich GaP surfaces for preparation of molybdenum disulphide. In Proc. 10th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. M. Feiler et al. Žilina: EDIS 2022. ISBN 978-80-554-1884-1. P. 21-24.

  • 2021

Gucmann, F., Kučera, M., Hasenőhrl, S., Eliáš, P., Rosová, A., Dobročka, E., Stoklas, R., and Kuzmík, J.: InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures, Semicond. Sci Technol. 36 (2021) 075025.

Gregušová, D., Dobročka, E., Eliáš, P., Stoklas, R., Blaho, M., Pohorelec, O., Haščík, Š., Kučera, M., and Kúdela, R.: GaAs nanomembranes in the high electron mobility transistor technology, Materials 14 (2021) 3461.

Pudiš, D., Urbancová, P., Novák, J., Kuzma, A., Lettrichová, I., Goraus, M., Eliáš, P., Laurenčíková, A., Jandura, D., Šušlik, Ľ., and Hasenöhrl, S.: Near-field analysis of GaP nanocones, Applied Surface Sci 539 (2021) 148213.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., and Kováč, J.Jr.: Influence of edge rich surface on growth of MoS2 from thin molybdenum layer. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 5-8.

  • 2020

Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Kováč, J.jr., Urbancová, P., and Pudiš, D.: Twinned nanoparticle structures for surface enhanced Raman scattering, Applied Surface Sci 528 (2020) 146548.

Ďurišová, J., Novák, J., Mizera, T., Pudiš, D., Eliáš, P., and Hasenöhrl, S.: Extinction measurement of gap nanocones. In Proc. 8th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2020. ISBN 978-80-554-1735-6. P. 123-126.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Kováč, J. jr., and Kováč, J.: MOS2/GAP heterojunction – formation and properties. In Proc. 8th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2020. ISBN 978-80-554-1735-6. P. 21-24.

Kučera, M., Hasenőhrl, S., Dobročka, E., Rosová, A., Eliáš, P., Gucmann, F., and Kuzmík, J.: Morphology, crystalline quality, and optical properties of MOCVDgrown InN/InAlN heterostructures. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 131-134.

  • 2019

Eliáš, P. and Haščík, Š.: Fabrication of nanocones by RIE on GaP, J. Phys.: Conf. Ser. 1319 (2019) 012017.

Novák, J., Eliáš, P., Hasenöhrl, S., and Laurenčíková, A., Urbancová, P., and Pudiš, D.: Nanocone structures with limited interspace grown by MOVPE, Lithuanian J. Phys. 59 (2019) 179-184.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., and Novotný, I.: Raman enhancement of Ag nanoparticles. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 23-26.

  • 2018

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Dobročka, E., Kováč, J.jr., Kováč, J., Ďurišová, J., and Pudiš, D.: Nanorods and nanocones for advanced sensor applications, Applied Surface Sci 461 (2018) 61-65. (APVV 14-0297, 16-0129, VEGA 2/0104, 2/0149/17)

Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., Szobolovszký, R., and Novák, J.: GaP nanocones covered with silver nanoparticles for surface-enhanced Raman spectroscopy, Applied Surface Sci 461 (2018) 149-153.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Vávra, I., Kováč, J.jr., and Kováč, J.: Deposition and properties of sulphide compunds on Gallium Phosphide nanocones. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 37-40.

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J.jr., Szobolovszký, R., and Novák, J.: Ag decorated GaP nanocones for SERS. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 204-207.

  • 2017

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Dobročka, E., Novák, J., : Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires. Applied Surface Sci 395 (2017) 162-165.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J., : Methanol sensor for integration with GaP nanowire photocathode. Proc. SPIE 10248, Nanotechnology VIII (2017) 102480E.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Novotný, I., Kováč, J., Valentin, M., Kováč, J., Ďurišová, J., Pudiš, D., : Optical and mechanical properties of a compact ZnO layer with embedded GaP nanowires. Applied Surface Sci 395 (2017) 180-184.

Laurenčíková, A., Dérer, J., Hasenöhrl, S., Eliáš, P., Novák, J., : Preparation of methanol concentration sensor with nanostructured surface In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 243-246.

Novák, J., Hasenöhrl, S., Eliáš, P., Laurenčíková, A., Kováč, J., Szobolovszký, R., Nevřela, J., : Preparation of nanocones for SERS applications In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 1-4.

  • 2015

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Novák, J., : Covering of GaP NW arrays with ZnO layer prepared at different sputering conditions In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 71-74.

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Kováč, J., Kováč, J., Eliáš, P., Novák, J., : Formation of compact covering of vertically standing GaP nanowire arrays by Ga-doped ZnO layer. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 93.

  • 2014

Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J., Mikolášek, M., Vávra, I., Novák, J., : Analysis of the core–shell interface between zinc-blende GaP and wurtzite ZnO. Solid-State Electr. 100 (2014) 7-10.

Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Rosová, A., Novák, J., : Annealing of gold nanoparticles on GaP(111)B: initial stage of GaP nanowire growth. Phys. Status Solidi RRL 8 (2014) 321-324.

Novák, J., Šutta, P., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., : Columnar microstructure of the ZnO shell layer deposited on the GaP nanowires. Applied Surface Sci 312 (2014) 162-166.

Laurenčíková, A., Hasenöhrl, S., Dérer, J., Eliáš, P., Hronec, P., Kováč, J., Novák, J., : Fabrication of GaP nanowire arrays on top InGaP solar cells In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 259-262.

Novák, J., Eliáš, P., Hasenöhrl, S., Vávra, I., Križanová, Z., Novotný, I., Kováč, J., : Growth and properties of core-shel GaP/ZnO nanowires. AIP Conf. Proc. 1598 (2014) 118.

  • 2013

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., Novák, J., :Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Sci 267 (2013) 60-64.

Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., Mikulics, M., Grünberg, P., : Properties of individual GaP/ZnO core-shell nanowires with radial PN junction, Proc. SPIE 8766 (2013) 8766-8.

Novák, J., Križanová, Z., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., Kováč, J., Šutta, P., Mikulics, M., : Structural and optical properties of individual GaP/ZnO core-shell nanowires. Vacuum 98 (2013) 106-110.

Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Laurenčíková, A., Novák, J., : Zinc-doped gallium phosphide nanowires for photovoltaic structures,. Applied Surface Sci 269 (2013) 72-76.

  • 2012

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., Mikulics, M., : Electrical and photoluminescence properties of individual GaP nanowires doped by zinc Phys. Status Solidi a 209 (2012) 2505-2509.

Laurenčíková, A., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Novák, J., : GaP/ZnO nanowires with a radial pn heterojunction. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 115-118.

Novák, J., Mikulics, M., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., : Photoluminescence of single GaP/ZnO core-shell nanowires. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 127-130.

Novotný, I., Tvarožek, V., Šutta, P., Netrvalová, M., Novák, J., Vávra, I., Eliáš, P., : Preparation of shell nanocrystalline Ga-doped ZnO ultra-thin films by sputtering. In: 28th Inter. Conf. Microelectr. Piscataway: IEEE, 2012. ISBN 978-1-4673-0235-7. P. 269-272.

Novák, J., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Križanová, Z., Vávra, I., Stoklas, R., : Preparation of thin Ga-doped ZnO layers for core–shell GaP/ZnO nanowires. Applied Surface Sci 258 (2012) 7607-7611.

Kováč, J., Čaplovičová, M., Búc, D., Brath, T., Kováč, J., Eliáš, P., Hasenöhrl, S., Novák, J., : Properties of GaP/ZnO heterostructures for photovoltaics. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 263-266.

Fröhlich, K., Hudec, B., Ťapajna, M., Hušeková, K., Rosová, A., Eliáš, P., Aarik, J., Rammula, R., Kasikov, A., Arroval, T., Aarik, L., Murakami, K., Rommel, M., Bauer, A., : TiO2-based metal-insulator-metal structures for future DRAM storage capacitors ECS Transactions 50 (2012) 79-87.

  • 2011

Hasenöhrl, S., Eliáš, P., Vávra, I., Novotný, I., Kováč, J., Novák, J., : GaP/ZnO core-shell nanowires – growth and characterization. In: EW-MOVPE XIV. Ed. J. Prazmowska. Wroclaw: House of Wroclaw Univ. Technol. 2011. ISBN 978-83-7493-599-9. P. 259-262.

Šoltýs, J., Kúdela, R., Kučera, M., Eliáš, P., Novák, J., Cambel, V., Vávra, I., Kostič, I., : Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape. J. Crystal Growth 316 (2011) 67-70.

Kúdela, R., Gregušová, D., Ščepka, T., Eliáš, P., Gaži, Š., : MOVPE grown InGaP/(Al, Ga)As free standing structures. In: EW-MOVPE XIV. Ed. J. Prazmowska. Wroclaw: House of Wroclaw Univ. Technol. 2011. ISBN 978-83-7493-599-9. P. 57-61.

Eliáš, P., Kostič, I., Šoltýs, J., : Patterning of pyramidal recesses in (1 0 0)InP substrate. Microelectr. Engn. 88 (2011) 36-40.

Cambel, V., Gregušová, D., Eliáš, P., Fedor, J., Kostič, I., Maňka, J., Ballo, P., : Switching magnetization magnetic force microscopy – an alternative to conventional lift-mode MFM, J. Electr. Engn. 62 (2011) 37-43.

  • 2010

Gregušová, D., Kúdela, R., Eliáš, P., Šoltýs, J., Kostič, I., Cambel, V., : GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs. J. Micromech. Microeng. 20 (2010) 097001.

Cambel, V., Eliáš, P., Gregušová, D., Martaus, J., Fedor, J., Karapetrov, G., Novosad, V., : Magnetic elements for switching magnetization magnetic force microscopy tips. J. Magnetism Magn. Mater. 322 (2010) 2715-2721.

Cambel, V., Eliáš, P., Gregušová, D., Fedor, J., Martaus, J., Karapetrov, G., Novosad, V., Kostič, I., : Novel magnetic tips developed for the switching magnetization magnetic force microscopy. J. Nanosci Nanotechnol. 10 (2010) 4477-4481.

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Vávra, I., : Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE. Mater. Sci Semicond. Proc. 13 (2010) 167-172.

  • 2008

Novák, J., Eliáš, P., Šoltýs, J., Hasenöhrl, S., Vávra, I., : InMnAs dots grown on GaAs surfaces etched via AlAs sacrificial layer. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 219-222.

Eliáš, P., Kostič, I., Kúdela, R., Novák, J., : Localised etching of (100) GaAs via an AlAs sacrificial layer. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 303-306.

  • 2007

Šoltýs, J., Cambel, V., Kúdela, R., Eliáš, P., : Study into the shape of oxide lines formed by LAO – influence an oxidized material. Surface Sci 601 (2007) 2876-2880.

Eliáš, P., Šoltýs, J., Kostič, I., : Study of ordinary facets revealed in (100) InP by etching in HCl. Mater. Sci Engn. B 138 (2007) 172-179.

  • 2006

Haščík, Š., Eliáš, P., Šoltýs, J., Martaus, J., Hotový, I., : CCl4-based reactive ion etching of semi-insulating GaAs and InP. Czechoslov. J. Phys. B 56 (2006) S1169-S1173.

Eliáš, P., Haščík, Š., Martaus, J., Kostič, I., Šoltýs, J., Hotový, I., : CCl4-based RIE pattern transfer into facets of mesas formed by wet etching in InP(100). Electrochem. Solid-State Lett. 9 (2006) G27-G30.

Eliáš, P., Gregušová, D., Martaus, J., Kostič, I., : Conformal AZ5214-E resist deposition on patterned (1 0 0) InP substrates. J. Micromech. Microengn. 16 (2006) 191–197.

Eliáš, P., Štrichovanec, P., Kostič, I., Novák, J., : Conformal, planarizing and bridging AZ5214-E layers deposited by a ‚draping‘ technique on non-planar III–V substrates. J. Micromech. Microengn. 16 (2006) 2608–2617.

Eliáš, P., Gregušová, D., Štrichovanec, P., Kostič, I., Novák, J., : Deposition of AZ5214-E layers on non-planar substrates with a “draping” technique. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 97-100.

Gregušová, D., Eliáš, P., Öszi, Z., Kúdela, R., Šoltýs, J., Fedor, J., Cambel, V., Kostič, I., : Technology and properties of a vector hall sensor. Microelectronics J. 37 (2006) 1543-1546.

  • 2005

Eliáš, P., Martaus, J., Šoltýs, J., Kostič, I., : Micromachining of mesa and pyramidal-shaped objects in (1 0 0) InP substrates. J. Micromech. Microengn. 15 (2005) 1007-1014.

  • 2004

Eliáš, P., Šoltýs, J., Kostič, I., : Formation of micro- and nano-striations at (211)A facets during wet etching of InP in HCl. Superlatt. Microstruct. 36 (2004) 315-323.

Eliáš, P., Kostič, I., Šoltýs, J., Hasenöhrl, S., : Wet-etch bulk micromachining of (100) InP substrates. J. Micromech. Microengn. 14 (2004) 1205–1214.

  • 2002

Eliáš, P., Hasenöhrl, S., Fedor, J., Cambel, V., : Hall bar device processing on patterned substrates using optical lithography. Sensors Actuators A 101 (2002) 150-155.

Cambel, V., Eliáš, P., Gregušová, D., Hasenöhrl, S., Kúdela, R., Fedor, J., : Mikroskopická magnetometria. In: 12. Konf. slov. fyzikov. Eds. M.Reiffers, L.Just. Košice: Slov. fyzik. spol. 2002. P. 68.

Eliáš, P., Kostič, I., Hasenöhrl, S., : Polar diagram of wet-etched (100) InP. In: 14th Indium Phosphide and Related Materials Conf. Piscataway: IEEE 2002. ISBN: 1092-8669. P. 229-231.

  • 2001

Eliáš, P., Cambel, V., Hasenöhrl, S., Kostič, I., : MOCVD growth of InP and InGaAs on InP non-planar substrates patterned with {1 1 0} quasi facets. J. Crystal Growth 233 (2001) 141-149.

  • 2000

Cambel, V., Karapetrov, G., Eliáš, P., Hasenöhrl, S., Kwok, W., Krause, J., Maňka, J., : Approaching the pT range with a 2DEG InGaAs/InP Hall sensor at 77 K. Microelectr. Engn. 51-52 (2000) 333-342.

Eliáš, P., Hasenöhrl, S., Cambel, V., Kostič, I., : Crystallographic dependence of OMVPE InGaAs/InP lateral growth on patterned (100) InP substrates prepared by wet etching. Thin Solid Films 380 (2000) 105-107.

Kúdela, R., Kučera, M., Olejníková, B., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in InGaP/GaAs/InGaP quantum wells. J. Crystal Growth 212 (2000) 21-28.

  • 1999

Kúdela, R., Kučera, M., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in MOVPE grown InGaP/GaAs structures. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: IP ASCR 1999. P. 131-133.

Kicin, S., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., Vávra, I., Hudek, P., : Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR Materials Sci Engn. B 65 (1999) 106-110.

Eliáš, P., Cambel, V., Hasenöhrl, S., Hudek, P., Novák, J., : SEM and AFM characterisation of high MESA patterned InP subtrated prepared by wet etching Mater. Sci Engn. B 66 (1999) 15-20.

  • 1998

Kicin, S., Novák, J., Eliáš, P., Hudek, P., : Fabrication of quantum wires structures. In: ELITECH 98. Bratislava: TU 1998. P. 153.

Cambel, V., Kúdela, R., Gregušová, D., Hasenöhrl, S., Eliáš, P., Novák, J., : Characterization of 2DEG Hall probes in high magnetic field at 4,2K. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 31.

Cambel, V., Gregušová, D., Eliáš, P., Hasenöhrl, S., Olejníková, B., Novák, J., Schaepers, T., Neurohr, K., Fox, A., : Characterization of InGaAs/InP microscopic Hall probe arrays with 2DEG active layer Mater. Sci Engn. B 51 (1998) 188.

Cambel, V., Olejníková, B., Eliáš, P., Kúdela, R., Novák, J., Kučera, M., : Microscopic 2DEG linear Hall probe arrays Superlattice Microstruct. 24 (1998) 181.

Hasenöhrl, S., Kučera, M., Novák, J., Bujdák, M., Eliáš, P., Kúdela, R., : MOCVD growth of InxGa1-xAs/GaAs multiple quantum well and superlattice structures for optical modulators Solid State Electron. 42 (1998) 263.

Morvic, M., Betko, J., Hasenöhrl, S., Gregušová, D., Cambel, V., Eliáš, P., Novák, J., : On quantum Hall resistance and Shubnikov de Haas effect measurements on InP/InGaAs structures. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 285.

Eliáš, P., Gregušová, D., Cambel, V., Hasenöhrl, S., Kúdela, R., Hudek, P., Novák, J., : Preparation of microscopic Hall probes and arrays. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 273.

Kicin, S., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., Hudek, P., : Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 203.

Cambel, V., Eliáš, P., Kúdela, R., Novák, J., Olejníková, B., Mozolová, Ž., Majoros, M., Kvitkovič, J., Hudek, P., : Preparation, characterization and application of microscopic Hall probe arrays Solid State Electron. 42 (1998) 247.

Ďurica, M., Cambel, V., Gregušová, D., Eliáš, P., Hasenöhrl, S., Kúdela, R., : Testing superconducting tapes by a 2DEG Hall probe array. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 277.

Kúdela, R., Eliáš, P., Kučera, M., Bonsch, P., Wullner, D., Fehly, D., Wehmann, H., Schlachetzki, A., : UV detectors based on InGaP. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 231.

  • 1997

Kováč, P., Cambel, V., Gregušová, D., Eliáš, P., Hušek, I., Kúdela, R., Hasenöhrl, S., Ďurica, M., : Testing of homogenity of Bi(2223)/Ag tapes by Hall probe array IoP Conf. Series No. 158 (1997) 1311.

  • 1996

Cambel, V., Eliáš, P., Kúdela, R., Ďurica, M., Novák, J., : Microscopic linear Hall probe arrays Electron. Lett. 32 (1996) 1236.

Cambel, V., Eliáš, P., Kúdela, R., Olejníková, B., Novák, J., Ďurica, M., Majoros, M., Kvitkovič, J., Mozolová, Ž., Hudek, P., : Preparation, characterization and application of microscopic linear hall probe arrays. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 153.

  • 1995

Novák, J., Eliáš, P., : A silicon-InGaAs tandem photodetector for radiation thermometry Measurement Sci Technol. 6 (1995) 1547.

Gregušová, D., Eliáš, P., Malacký, L., Kúdela, R., Škriniarová, J., : Wet chemical MESA etching of InGaP and GaAs with solutions based on HCl, CH3COOH and H2O2 Physica Status Solidi A 151 (1995) 113.

  • 1992

Novák, J., Eliáš, P., : The InP based photodiodes as sensors for radiation thermometry Proc. SPIE 1712 (1992) 430.