- 2020
Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Kováč, J.jr., Urbancová, P., and Pudiš, D.: Twinned nanoparticle structures for surface enhanced Raman scattering, Applied Surface Sci 528 (2020) 146548.
Ďurišová, J., Novák, J., Mizera, T., Pudiš, D., Eliáš, P., and Hasenöhrl, S.: Extinction measurement of gap nanocones. In Proc. 8th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2020. ISBN 978-80-554-1735-6. P. 123-126.
Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Kováč, J. jr., and Kováč, J.: MOS2/GAP heterojunction – formation and properties. In Proc. 8th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2020. ISBN 978-80-554-1735-6. P. 21-24.
Kučera, M., Hasenőhrl, S., Dobročka, E., Rosová, A., Eliáš, P., Gucmann, F., and Kuzmík, J.: Morphology, crystalline quality, and optical properties of MOCVDgrown InN/InAlN heterostructures. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 131-134.
- 2019
Eliáš, P. and Haščík, Š.: Fabrication of nanocones by RIE on GaP, J. Phys.: Conf. Ser. 1319 (2019) 012017.
Novák, J., Eliáš, P., Hasenöhrl, S., and Laurenčíková, A., Urbancová, P., and Pudiš, D.: Nanocone structures with limited interspace grown by MOVPE, Lithuanian J. Phys. 59 (2019) 179-184.
Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., and Novotný, I.: Raman enhancement of Ag nanoparticles. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 23-26.
- 2018
Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Dobročka, E., Kováč, J.jr., Kováč, J., Ďurišová, J., and Pudiš, D.: Nanorods and nanocones for advanced sensor applications, Applied Surface Sci 461 (2018) 61-65. (APVV 14-0297, 16-0129, VEGA 2/0104, 2/0149/17)
Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., Szobolovszký, R., and Novák, J.: GaP nanocones covered with silver nanoparticles for surface-enhanced Raman spectroscopy, Applied Surface Sci 461 (2018) 149-153.
Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Vávra, I., Kováč, J.jr., and Kováč, J.: Deposition and properties of sulphide compunds on Gallium Phosphide nanocones. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 37-40.
Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J.jr., Szobolovszký, R., and Novák, J.: Ag decorated GaP nanocones for SERS. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 204-207.
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Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Dobročka, E., Novák, J., : Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires. Applied Surface Sci 395 (2017) 162-165. (APVV 0395-12). (APVV 14-0297). (VEGA 2/0098/13). (CENTE).
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Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J., : Methanol sensor for integration with GaP nanowire photocathode. Proc. SPIE 10248, Nanotechnology VIII (2017) 102480E.
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Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Novotný, I., Kováč, J., Valentin, M., Kováč, J., Ďurišová, J., Pudiš, D., : Optical and mechanical properties of a compact ZnO layer with embedded GaP nanowires. Applied Surface Sci 395 (2017) 180-184. (APVV 0395-12). (APVV 14-0297). (VEGA 2/0098/13).
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Laurenčíková, A., Dérer, J., Hasenöhrl, S., Eliáš, P., Novák, J., : Preparation of methanol concentration sensor with nanostructured surface In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 243-246.. (APVV 14-0297). (VEGA 2/0104/17). (CENTE II).
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Novák, J., Hasenöhrl, S., Eliáš, P., Laurenčíková, A., Kováč, J., Szobolovszký, R., Nevřela, J., : Preparation of nanocones for SERS applications In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 1-4. (APVV 14-0297). (APVV 0301-10). (VEGA 2/0104/17).
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Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Novák, J., : Covering of GaP NW arrays with ZnO layer prepared at different sputering conditions In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 71-74.. (APVV 0395-12). (VEGA 2/0098/13). (CENTE).
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Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Kováč, J., Kováč, J., Eliáš, P., Novák, J., : Formation of compact covering of vertically standing GaP nanowire arrays by Ga-doped ZnO layer. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 93.
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Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J., Mikolášek, M., Vávra, I., Novák, J., : Analysis of the core–shell interface between zinc-blende GaP and wurtzite ZnO. Solid-State Electr. 100 (2014) 7-10. (APVV 0301-10). (APVV 0395-12). (VEGA 2/0098/13).
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Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Rosová, A., Novák, J., : Annealing of gold nanoparticles on GaP(111)B: initial stage of GaP nanowire growth. Phys. Status Solidi RRL 8 (2014) 321-324. (APVV 0301-10). (CENTE).
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Novák, J., Šutta, P., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., : Columnar microstructure of the ZnO shell layer deposited on the GaP nanowires. Applied Surface Sci 312 (2014) 162-166. (APVV 0301-10). (APVV 0395-12). (VEGA 2/0098/13).
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Laurenčíková, A., Hasenöhrl, S., Dérer, J., Eliáš, P., Hronec, P., Kováč, J., Novák, J., : Fabrication of GaP nanowire arrays on top InGaP solar cells In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 259-262. (APVV 0301-10). (APVV 0395-12). (VEGA 2/0098/13). (CENTE).
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Novák, J., Eliáš, P., Hasenöhrl, S., Vávra, I., Križanová, Z., Novotný, I., Kováč, J., : Growth and properties of core-shel GaP/ZnO nanowires. AIP Conf. Proc. 1598 (2014) 118.
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Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., Novák, J., :Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Sci 267 (2013) 60-64. (ITMS 2624220028). (APVV 0301-10). (ITMS 26240220041).
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Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., Mikulics, M., Grünberg, P., : Properties of individual GaP/ZnO core-shell nanowires with radial PN junction, Proc. SPIE 8766 (2013) 8766-8.
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Novák, J., Križanová, Z., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., Kováč, J., Šutta, P., Mikulics, M., : Structural and optical properties of individual GaP/ZnO core-shell nanowires. Vacuum 98 (2013) 106-110. (APVV 0301-10). (VEGA 2/0081/09).
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Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Laurenčíková, A., Novák, J., : Zinc-doped gallium phosphide nanowires for photovoltaic structures,. Applied Surface Sci 269 (2013) 72-76. (VEGA 2/0081/09). (APVV 0301-10). (APVV LPP-0162-09).
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Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., Mikulics, M., : Electrical and photoluminescence properties of individual GaP nanowires doped by zinc Phys. Status Solidi a 209 (2012) 2505-2509. (APVV 0301-10). (APVV LPP-0162-09). (VEGA 2/0081/09).
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Laurenčíková, A., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Novák, J., : GaP/ZnO nanowires with a radial pn heterojunction. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 115-118.
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Novák, J., Mikulics, M., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., : Photoluminescence of single GaP/ZnO core-shell nanowires. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 127-130.
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Novotný, I., Tvarožek, V., Šutta, P., Netrvalová, M., Novák, J., Vávra, I., Eliáš, P., : Preparation of shell nanocrystalline Ga-doped ZnO ultra-thin films by sputtering. In: 28th Inter. Conf. Microelectr. Piscataway: IEEE, 2012. ISBN 978-1-4673-0235-7. P. 269-272.
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Novák, J., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Križanová, Z., Vávra, I., Stoklas, R., : Preparation of thin Ga-doped ZnO layers for core–shell GaP/ZnO nanowires. Applied Surface Sci 258 (2012) 7607-7611.(VEGA 2/0081/09). (APVV 0301-10).
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Kováč, J., Čaplovičová, M., Búc, D., Brath, T., Kováč, J., Eliáš, P., Hasenöhrl, S., Novák, J., : Properties of GaP/ZnO heterostructures for photovoltaics. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 263-266.
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Fröhlich, K., Hudec, B., Ťapajna, M., Hušeková, K., Rosová, A., Eliáš, P., Aarik, J., Rammula, R., Kasikov, A., Arroval, T., Aarik, L., Murakami, K., Rommel, M., Bauer, A., : TiO2-based metal-insulator-metal structures for future DRAM storage capacitors ECS Transactions 50 (2012) 79-87.
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Hasenöhrl, S., Eliáš, P., Vávra, I., Novotný, I., Kováč, J., Novák, J., : GaP/ZnO core-shell nanowires – growth and characterization. In: EW-MOVPE XIV. Ed. J. Prazmowska. Wroclaw: House of Wroclaw Univ. Technol. 2011. ISBN 978-83-7493-599-9. P. 259-262.
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Šoltýs, J., Kúdela, R., Kučera, M., Eliáš, P., Novák, J., Cambel, V., Vávra, I., Kostič, I., : Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape. J. Crystal Growth 316 (2011) 67-70.(VEGA 2/0081/09).
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Kúdela, R., Gregušová, D., Ščepka, T., Eliáš, P., Gaži, Š., : MOVPE grown InGaP/(Al, Ga)As free standing structures. In: EW-MOVPE XIV. Ed. J. Prazmowska. Wroclaw: House of Wroclaw Univ. Technol. 2011. ISBN 978-83-7493-599-9. P. 57-61.
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Eliáš, P., Kostič, I., Šoltýs, J., : Patterning of pyramidal recesses in (1 0 0)InP substrate. Microelectr. Engn. 88 (2011) 36-40. (VEGA 2/0081/09).
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Cambel, V., Gregušová, D., Eliáš, P., Fedor, J., Kostič, I., Maňka, J., Ballo, P., : Switching magnetization magnetic force microscopy – an alternative to conventional lift-mode MFM, J. Electr. Engn. 62 (2011) 37-43.
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Gregušová, D., Kúdela, R., Eliáš, P., Šoltýs, J., Kostič, I., Cambel, V., : GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs. J. Micromech. Microeng. 20 (2010) 097001.
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Cambel, V., Eliáš, P., Gregušová, D., Martaus, J., Fedor, J., Karapetrov, G., Novosad, V., : Magnetic elements for switching magnetization magnetic force microscopy tips. J. Magnetism Magn. Mater. 322 (2010) 2715-2721.
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Cambel, V., Eliáš, P., Gregušová, D., Fedor, J., Martaus, J., Karapetrov, G., Novosad, V., Kostič, I., : Novel magnetic tips developed for the switching magnetization magnetic force microscopy. J. Nanosci Nanotechnol. 10 (2010) 4477-4481.
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Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Vávra, I., : Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE. Mater. Sci Semicond. Proc. 13 (2010) 167-172.
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Novák, J., Eliáš, P., Šoltýs, J., Hasenöhrl, S., Vávra, I., : InMnAs dots grown on GaAs surfaces etched via AlAs sacrificial layer. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 219-222.
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Eliáš, P., Kostič, I., Kúdela, R., Novák, J., : Localised etching of (100) GaAs via an AlAs sacrificial layer. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 303-306.
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Šoltýs, J., Cambel, V., Kúdela, R., Eliáš, P., : Study into the shape of oxide lines formed by LAO – influence an oxidized material. Surface Sci 601 (2007) 2876-2880.
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Eliáš, P., Šoltýs, J., Kostič, I., : Study of ordinary facets revealed in (100) InP by etching in HCl. Mater. Sci Engn. B 138 (2007) 172-179. (APVV 51-045705).
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Haščík, Š., Eliáš, P., Šoltýs, J., Martaus, J., Hotový, I., : CCl4-based reactive ion etching of semi-insulating GaAs and InP. Czechoslov. J. Phys. B 56 (2006) S1169-S1173.
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Eliáš, P., Haščík, Š., Martaus, J., Kostič, I., Šoltýs, J., Hotový, I., : CCl4-based RIE pattern transfer into facets of mesas formed by wet etching in InP(100). Electrochem. Solid-State Lett. 9 (2006) G27-G30.
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Eliáš, P., Gregušová, D., Martaus, J., Kostič, I., : Conformal AZ5214-E resist deposition on patterned (1 0 0) InP substrates. J. Micromech. Microengn. 16 (2006) 191–197.
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Eliáš, P., Štrichovanec, P., Kostič, I., Novák, J., : Conformal, planarizing and bridging AZ5214-E layers deposited by a ‚draping‘ technique on non-planar III–V substrates. J. Micromech. Microengn. 16 (2006) 2608–2617.
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Eliáš, P., Gregušová, D., Štrichovanec, P., Kostič, I., Novák, J., : Deposition of AZ5214-E layers on non-planar substrates with a “draping” technique. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 97-100.
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Gregušová, D., Eliáš, P., Öszi, Z., Kúdela, R., Šoltýs, J., Fedor, J., Cambel, V., Kostič, I., : Technology and properties of a vector hall sensor. Microelectronics J. 37 (2006) 1543-1546.
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Eliáš, P., Martaus, J., Šoltýs, J., Kostič, I., : Micromachining of mesa and pyramidal-shaped objects in (1 0 0) InP substrates. J. Micromech. Microengn. 15 (2005) 1007-1014.
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Eliáš, P., Šoltýs, J., Kostič, I., : Formation of micro- and nano-striations at (211)A facets during wet etching of InP in HCl. Superlatt. Microstruct. 36 (2004) 315-323.
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Eliáš, P., Kostič, I., Šoltýs, J., Hasenöhrl, S., : Wet-etch bulk micromachining of (100) InP substrates. J. Micromech. Microengn. 14 (2004) 1205–1214.
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Eliáš, P., Hasenöhrl, S., Fedor, J., Cambel, V., : Hall bar device processing on patterned substrates using optical lithography. Sensors Actuators A 101 (2002) 150-155.
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Cambel, V., Eliáš, P., Gregušová, D., Hasenöhrl, S., Kúdela, R., Fedor, J., : Mikroskopická magnetometria. In: 12. Konf. slov. fyzikov. Eds. M.Reiffers, L.Just. Košice: Slov. fyzik. spol. 2002. P. 68.
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Eliáš, P., Kostič, I., Hasenöhrl, S., : Polar diagram of wet-etched (100) InP. In: 14th Indium Phosphide and Related Materials Conf. Piscataway: IEEE 2002. ISBN: 1092-8669. P. 229-231.
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Eliáš, P., Cambel, V., Hasenöhrl, S., Kostič, I., : MOCVD growth of InP and InGaAs on InP non-planar substrates patterned with {1 1 0} quasi facets. J. Crystal Growth 233 (2001) 141-149. | ||||
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Cambel, V., Karapetrov, G., Eliáš, P., Hasenöhrl, S., Kwok, W., Krause, J., Maňka, J., : Approaching the pT range with a 2DEG InGaAs/InP Hall sensor at 77 K. Microelectr. Engn. 51-52 (2000) 333-342.
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Eliáš, P., Hasenöhrl, S., Cambel, V., Kostič, I., : Crystallographic dependence of OMVPE InGaAs/InP lateral growth on patterned (100) InP substrates prepared by wet etching. Thin Solid Films 380 (2000) 105-107.
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Kúdela, R., Kučera, M., Olejníková, B., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in InGaP/GaAs/InGaP quantum wells. J. Crystal Growth 212 (2000) 21-28.
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Kúdela, R., Kučera, M., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in MOVPE grown InGaP/GaAs structures. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: IP ASCR 1999. P. 131-133.
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Kicin, S., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., Vávra, I., Hudek, P., : Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR Materials Sci Engn. B 65 (1999) 106-110.
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Eliáš, P., Cambel, V., Hasenöhrl, S., Hudek, P., Novák, J., : SEM and AFM characterisation of high MESA patterned InP subtrated prepared by wet etching Mater. Sci Engn. B 66 (1999) 15-20.
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Kicin, S., Novák, J., Eliáš, P., Hudek, P., : Fabrication of quantum wires structures. In: ELITECH 98. Bratislava: TU 1998. P. 153.
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Cambel, V., Kúdela, R., Gregušová, D., Hasenöhrl, S., Eliáš, P., Novák, J., : Characterization of 2DEG Hall probes in high magnetic field at 4,2K. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 31.
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Cambel, V., Gregušová, D., Eliáš, P., Hasenöhrl, S., Olejníková, B., Novák, J., Schaepers, T., Neurohr, K., Fox, A., : Characterization of InGaAs/InP microscopic Hall probe arrays with 2DEG active layer Mater. Sci Engn. B 51 (1998) 188.
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Cambel, V., Olejníková, B., Eliáš, P., Kúdela, R., Novák, J., Kučera, M., : Microscopic 2DEG linear Hall probe arrays Superlattice Microstruct. 24 (1998) 181.
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Hasenöhrl, S., Kučera, M., Novák, J., Bujdák, M., Eliáš, P., Kúdela, R., : MOCVD growth of InxGa1-xAs/GaAs multiple quantum well and superlattice structures for optical modulators Solid State Electron. 42 (1998) 263.
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Morvic, M., Betko, J., Hasenöhrl, S., Gregušová, D., Cambel, V., Eliáš, P., Novák, J., : On quantum Hall resistance and Shubnikov de Haas effect measurements on InP/InGaAs structures. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 285.
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Eliáš, P., Gregušová, D., Cambel, V., Hasenöhrl, S., Kúdela, R., Hudek, P., Novák, J., : Preparation of microscopic Hall probes and arrays. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 273.
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Kicin, S., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., Hudek, P., : Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 203.
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Cambel, V., Eliáš, P., Kúdela, R., Novák, J., Olejníková, B., Mozolová, Ž., Majoros, M., Kvitkovič, J., Hudek, P., : Preparation, characterization and application of microscopic Hall probe arrays Solid State Electron. 42 (1998) 247.
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Ďurica, M., Cambel, V., Gregušová, D., Eliáš, P., Hasenöhrl, S., Kúdela, R., : Testing superconducting tapes by a 2DEG Hall probe array. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 277.
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Kúdela, R., Eliáš, P., Kučera, M., Bonsch, P., Wullner, D., Fehly, D., Wehmann, H., Schlachetzki, A., : UV detectors based on InGaP. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 231.
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Kováč, P., Cambel, V., Gregušová, D., Eliáš, P., Hušek, I., Kúdela, R., Hasenöhrl, S., Ďurica, M., : Testing of homogenity of Bi(2223)/Ag tapes by Hall probe array IoP Conf. Series No. 158 (1997) 1311.
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Cambel, V., Eliáš, P., Kúdela, R., Ďurica, M., Novák, J., : Microscopic linear Hall probe arrays Electron. Lett. 32 (1996) 1236.
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Cambel, V., Eliáš, P., Kúdela, R., Olejníková, B., Novák, J., Ďurica, M., Majoros, M., Kvitkovič, J., Mozolová, Ž., Hudek, P., : Preparation, characterization and application of microscopic linear hall probe arrays. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 153.
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