Ing. Róbert KÚDELA, CSc.

  • 2019

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

  • 2018

Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

  • 2017
Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M.,Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A., : Current conduction mechanism and electrical break-down in InN grown on GaN. Applied Phys. Lett. 110 (2017) 232103. (APVV 15-0031). (CENTE II).

 

Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Micusik, M., Gregušová, D., : Optimization of UV-assisted wet oxidation of GaAs,. J. Vacuum Sci Technol. B 35 (2017) 01A116. (VEGA 2/0105/13). (APVV 15-0243). (CENTE II).

 

Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P., : Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144. (VEGA 2/0105/13). (CENTE). (APVV 14-0297).

 

  • 2015
Kuzmík, J., Haščík, Š., Kučera, M., Kúdela, R., Dobročka, E., Adikimenakis, A., Mičušík, M., Gregor, M., Plecenik, A., Georgakilas, A., : Elimination of surface band bending on N-polar InN with thin GaN capping,. Applied Phys. Lett. 107 (2015) 191605. (APVV 0367-11). (VEGA 2/0138/14). (CENTE).

 

Gucmann, F., Kúdela, R., Dobročka, E., Mičušík, M., Rosová, A., Novák, J., Gregušová, D., : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide In: 18. Škola vákuovej techniky: Nanosvet s vákuom. Bratislava: SVS, 2015. ISBN 978-80-971179-6-2. S. 27-30.. (VEGA 2/0105/13). (CENTE). (VEGA 2/0098/13).

 

Gucmann, F., Kúdela, R., Kordoš, P., Dobročka, E., Gaži, Š., Dérer, J., Liday, J., Vogrinčič, P., Gregušová, D., : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap. J. Vacuum Sci Technol. B 33 (2015) 01A111. (VEGA 2/0105/13). (VEGA 2/0098/13). (CENTE).

 

Ščepka, T., Polakovič, T., Šoltýs, J., Tóbik, J., Kulich, M., Kúdela, R., Dérer, J., Cambel, V., : Individual vortex nucleation/annihilation in ferromagnetic nanodots with broken symmetry observed by micro/Hall magnetometry. AIP Adv. 5 (2015) 117205.. (APVV 0088-12). (APVV 0036-11). (CENTE).

 

Gregušová, D., Kúdela, R., Gucmann, F., Stoklas, R., Blaho, M., Ťapajna, M., Kordoš, P., Fröhlich, K., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 58.. (VEGA 2/0105/13). (APVV 14-0297). (CENTE).

 

Kúdela, R., Gregušová, D., Šoltýs, J., Kučera, M., Dobročka, E., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 87-88.. (VEGA 2/0105/13). (APVV 14-0297).

 

  • 2014
Gucmann, F., Kúdela, R., Fröhlich, K., Liday, J., Vogrinčič, P., Gaži, Š., Stoklas, R., Kordoš, P., Novák, J., Gregušová, D., : III-As high electron mobility transistors with recessed ex-situ gate oxide In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 5-8. (VEGA 2/0105/13). (VEGA 2/0098/13). (CENTE).

 

Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., Kordoš, P., : InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator. Applied Phys. Lett. 105 (2014) 183504. (VEGA 2/0105/13). (VEGA 2/0138/14). (CENTE).

 

Ščepka, T., Šoltýs, J., Precner, M., Fedor, J., Tóbik, J., Gregušová, D., Gucmann, F., Kúdela, R., Cambel, V., : Vortex dynamics in ferromagnetic nanoelements observed by micro-hall probes. Acta Phys. Polonica A 126 (2014) 390-391. (APVV 0088-12). (Vega 2/0037/12). (CENTE).

 

  • 2013
Kúdela, R., Šoltýs, J., Vincze, A., Novák, J., : Tellurium delta-doped InGaP layers grown by metalorganic vapour phase epitaxy. Phys. Status Solidi RRL 7 (2013) 443–446. (APVV 0301-10). (VEGA 2/0081/09).

 

  • 2012
Kordoš, P., Kúdela, R., Stoklas, R., Čičo, K., Mikulics, M., Gregušová, D., Novák, J., : Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition. Applied Phys. Lett. 100 (2012) 142113. (APVV LPP-0162-09).

 

Ščepka, T., Gregušová, D., Gaži, Š., Haščík, Š., Fedor, J., Šoltýs, J., Kúdela, R., Cambel, V., : Detection elements for on-cantilever laboratory. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 91-94. (CENTE).

 

Kúdela, R., Gregušová, D., Stoklas, R., : Devices with Te-doped InGaP layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 111-114.

 

Kordoš, P., Fox, A., Kúdela, R., Mikulics, M., Stoklas, R., Gregušová, D., : GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD. Semicond. Sci Technol. 27 (2012) 115002. (VEGA 2/0081/09). (VEGA 2/0098/09). (APVV LPP-0162-09).

 

Kučera, M., Kúdela, R., Novák, J., : Kučera, M., Kúdela R., and Novák, J.: Photoreflectance study of the role of a thin AlOx layer in a GaAs surface passivation and the Schottky barrier forming. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 231-234.

 

Precner, M., Gregušová, D., Šoltýs, J., Fedor, J., Gucmann, F., Tóbik, J., Kúdela, R., Cambel, V., : Nucleation and annihilation of magnetic vortices in Pacman-like nanodots observed by micro-Hall probes. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 87-90.

 

Gregušová, D., Kúdela, R., Stoklas, R., Blaho, M., Gucmann, F., Fedor, J., Kordoš, P., : The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 107-110.

 

  • 2011
Šoltýs, J., Kúdela, R., Kučera, M., Eliáš, P., Novák, J., Cambel, V., Vávra, I., Kostič, I., : Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape. J. Crystal Growth 316 (2011) 67-70.(VEGA 2/0081/09).

 

Kúdela, R., Gregušová, D., Ščepka, T., Eliáš, P., Gaži, Š., : MOVPE grown InGaP/(Al, Ga)As free standing structures. In: EW-MOVPE XIV. Ed. J. Prazmowska. Wroclaw: House of Wroclaw Univ. Technol. 2011. ISBN 978-83-7493-599-9. P. 57-61.

 

  • 2010
Martaus, J., Cambel, V., Gregušová, D., Kúdela, R., Fedor, J., : 50-nm local anodic oxidation technology of semiconductor heterostructures. J. Nanosci Nanotechnol. 10 (2010) 4448-4453.

 

Gregušová, D., Kúdela, R., Eliáš, P., Šoltýs, J., Kostič, I., Cambel, V., : GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs. J. Micromech. Microeng. 20 (2010) 097001.

 

  • 2009
Kúdela, R., Kučera, M., Dobročka, E., Šoltýs, J., : AlGaAs/InGaP interfaces in structures prepared by MOVPE. J. Crystal Growth 311 (2009) 3123-3129. (APVV 51-045705).

 

Kúdela, R., Gregušová, D., Stoklas, R., Šoltýs, J., Kučera, M., Dobročka, E., Kordoš, P., : HEMT transistors with aluminum oxide and InGaP layers. In: EW-MOVPE XIII. Ulm Univ. 2009. P. 225-228.

 

Gregušová, D., Martaus, J., Fedor, J., Kúdela, R., Kostič, I., Cambel, V., : On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography. Ultramicroscopy 109 (2009) 1080-1084.(APVV 51-045705). (VEGA 2/0098/09).

 

  • 2008
Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices. Ultramicroscopy 108 (2008) 1021-1024.

 

Eliáš, P., Kostič, I., Kúdela, R., Novák, J., : Localised etching of (100) GaAs via an AlAs sacrificial layer. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 303-306.

 

Martaus, J., Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., : New approach to local anodic oxidation of semiconductor heterostructures. Ultramicroscopy 108 (2008) 1086-1089.

 

Martaus, J., Cambel, V., Gregušová, D., Kúdela, R., : Sub-micron Hall probes prepared by tip-induced local anodic oxidation. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 195-198.

 

  • 2007
Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : AFM nanooxidation process – technology perspective for mesoscopic structures. Surface Sci. 601 (2007) 2717-2723. (APVV 51-045705).

 

Martaus, J., Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., : AFM tip induced local anodic oxidation of InGaP/AlGaAs/GaAs heterostructures. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 299-302.

 

Štrichovanec, P., Kúdela, R., Vávra, I., Kováč, J., Šoltýs, J., Novák, J., : Characterization of corrugated MQW heterostructure prepared on patterned (001) GaAs substrate by MOVPE Physica Status Solidi c 4 (2007) 1499-1502.

 

Cambel, V., Karapetrov, G., Novosad, V., Bartolome, E., Gregušová, D., Fedor, J., Kúdela, R., Šoltýs, J., :Novel Hall sensors developed for magnetic field imaging systems. J. Magnetism Magn. Mater. 316 (2007) 232-235. (APVV 51-045705).

 

Kúdela, R., Martaus, J., Cambel, V., Kučera, M., Dobročka, E., : Novel MOVPE grown 2DEG structures for local anodic oxidation. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 49-52.

 

Dubecký, F., Srnánek, R., Ferrari, C., Gombia, E., Kúdela, R., John, J., : Physical properties of low temperature GHaAs/InP strained heterojunction: micro-raman spectroscopy and x-ray diffraction study. In: APCOM 2007. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 187-190.

 

Šoltýs, J., Cambel, V., Kúdela, R., Eliáš, P., : Study into the shape of oxide lines formed by LAO – influence an oxidized material. Surface Sci 601 (2007) 2876-2880.

 

Šoltýs, J., Gregušová, D., Kúdela, R., Kostič, I., Cambel, V., : Study of epitaxially overgrown pyramids developed for active tips in scanning force microscopy. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 297-298.

 

  • 2006
Martaus, J., Cambel, V., Kúdela, R., Gregušová, D., Šoltýs, J., : 2D electron transport through potential barrier prepared by LAO on shallow GaAs/AlxGa1-xAs/InGaP heterostructures. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 253-256.

 

Štrichovanec, P., Kúdela, R., Vávra, I., Srnánek, R., Novák, J., : Dark current of AlGaAs/GaAs n-QWIP prepared on patterned (001) GaAs substrate by MOVPE. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 233-236.

 

Srnánek, R., Dubecký, F., Zalusky, F., Irmer, G., Kúdela, R., Vincze, A., Novotný, I., John, J., : Diagnostics of LT GaAs/InP structures by micro-Raman spectroscopy. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 55-58.

 

Šoltýs, J., Gregušová, D., Kúdela, R., Šatka, A., Kostič, I., Cambel, V., : Formation of sharp-apex pyramids for active tips used in scanning probe microscopy. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 105-108.

 

Cambel, V., Fedor, J., Gregušová, D., Kúdela, R., : Hallovská magnetometria, Čs. čas. pro fyziku 56 (2006) 152-157.

 

Štrichovanec, P., Kúdela, R., Vávra, I., Novák, J., : Characterization of QWIP structures prepared on GaAs-patterned substrates. Microeletr. J. 37 (2006) 888-891.

 

Novák, J., Štrichovanec, P., Vávra, I., Kúdela, R., Kučera, M., : Study of the optical and structural properties of multi quantum well structures grown on high-index surfaces. Microelectron. J. 37 (2006) 1515-1518.

 

Belkin, A., Fedor, J., Pankowski, P., Iavarone, M., Novosad, V., Karapetrov, G., Cambel, V., Gregušová, D.,Kúdela, R., : Switching of magnetic domains in Permalloy microstructures using two-dimensional electron gas. Applied Physics Lett. 89 (2006) 182513.

 

Gregušová, D., Eliáš, P., Öszi, Z., Kúdela, R., Šoltýs, J., Fedor, J., Cambel, V., Kostič, I., : Technology and properties of a vector hall sensor. Microelectronics J. 37 (2006) 1543-1546.

 

Kordoš, P., Kúdela, R., Gregušová, D., Donoval, D., : The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors. Semicond. Sci Technol. 21 (2006) 1592-1596.

 

Ferrari, C., Dubecký, F., Kúdela, R., John, J., : X-ray diffraction characterization of low temperature grown GaAs/InP epilayers. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 143-146.

 

  • 2005
Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., : Growth and characterisation of InxGa1-xP layers with composition close to crossover from direct to indirect band gap. J. Crystal Growth 275 (2005) e1281-e1286.

 

Štrichovanec, P., Novák, J., Vávra, I., Kúdela, R., Kučera, M., Šoltýs, J., : QWIP structures prepared on wet-etched non-planar GaAs. Phys. Status Solidi c 2 (2005) 1384-1388.

 

  • 2004
Pelosi, C., Attolini, G., Frigeri, P., Bersani, M., Giubertoni, D., Vanzetti, L., Kúdela, R., : In-depth analysis of the interfaces in InGaP/GaAs heterosystems European Physical J. 27 (2004) 379-383.

 

Kicin, S., Kromka, A., Kúdela, R., Hasenöhrl, S., Schwarz, A., Novák, J., : Micro-Raman study of InGaP composition grown on V-grooved substrates. Materials Sci Engn. B 113 (2004) 111-116.

 

Cambel, V., Gregušová, D., Fedor, J., Kúdela, R., Bending, S., : Scanning vector Hall probe microscopy. J. Magnetism Magnetic Mater. 272-276 (2004) 2141-2143.

 

Cambel, V., Šoltýs, J., Moško, M., Kúdela, R., : Two-dimensional electron transport through a barrier prepared by tip-induced oxidation. Superlatt. Microstruct. 36 (2004) 359-367.

 

  • 2003
Hasenöhrl, S., Novák, J., Kúdela, R., Betko, J., Morvic, M., Fedor, J., : Anisotropy in transport properties of ordered strained InGaP. J. Crystal Growth 248 (2003) 369.

 

Gregušová, D., Cambel, V., Fedor, J., Kúdela, R., Šoltýs, J., Lalinský, T., Kostič, I., Bending, S., : Fabrication of a vector Hall sensor for magnetic microscopy. Applied Phys. Lett. 82 (2003) 3704-3706.

 

Cambel, V., Gregušová, D., Kúdela, R., : Formation of GaAs three-dimensional objects using AlAs “facet-forming” sacrificial layer and H3PO4, H2O2, H2O based solution. J. Applied Phys. 94 (2003) 4643-4648.

 

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Influence of ordered and random parts on properties of InGaP alloy grown by MOVPE. In: EW MOVPE X. Univ. Lecce 2003. P. 161.

 

Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., Kostič, I., Attolini, G., Pelosi, C., : Investigation of the GaAs-pyramids overgrowth using MOCVD. J. Crystal Growth 248 (2003) 417-420.

 

Kúdela, R., Štrichovanec, P., Gregušová, D., Cambel, V., Šoltýs, J., Hasenöhrl, S., Novák, J., Kostič, I., Attolini, G., Pelosi, C., : MOVPE growth of AlGaAs/GaAs and InGaP/GaAs structures on patterned GaAs substrates. In: EW MOVPE X. Univ. Lecce 2003. P. 219.

 

  • 2002
Hasenöhrl, S., Kúdela, R., Novák, J., Tuomi, T., Knuuttila, L., : Anisotropic surface structure in ordered strained InGaP. Materials Sci Engn. B 88 (2002) 134-138.

 

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Effect of strain and ordering on the band-gap energy of InGaP. Materials Sci Engn. B 88 (2002) 139-142.

 

Cambel, V., Eliáš, P., Gregušová, D., Hasenöhrl, S., Kúdela, R., Fedor, J., : Mikroskopická magnetometria. In: 12. Konf. slov. fyzikov. Eds. M.Reiffers, L.Just. Košice: Slov. fyzik. spol. 2002. P. 68.

 

Kúdela, R., Kučera, M., Gregušová, D., Cambel, V., Novák, J., : MOVPE growth of 1220 nm (InGa)(AsP) LED structures. In: ASDAM ’02. Ed. J.Breza and D.Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 183.

 

Kúdela, R., Kučera, M., Novák, J., Ferrari, C., Pelosi, C., : Study of narrow InGaP/(In)GaAs quantum wells. J. Crystal Growth 242 (2002) 132-140.

 

  • 2001
Kuzmík, J., Hasenöhrl, S., Kúdela, R., Haščík, Š., Mozolová, Ž., Lalinský, T., Breza, J., Vogrinčič, P., Škriniarová, J., Fox, A., Kordoš, P., : InGaAs/InGaP HEMTs: technological optimization and analytical modelling. Vacuum 61 (2001) 333-337.

 

Longo, M., Parisini, A., Tarricone, L., Toni, L., Kúdela, R., : Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers. Materials Sci & Engn. B 86 (2001) 157-164.

 

  • 2000
Attolini, G., Bocchi, C., Germini, F., Pelosi, C., Parisini, A., Tarricone, L., Kúdela, R., Hasenöhrl, S., : Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE Materials Chemistry & Physics 66 (2000) 246-252.

 

Kúdela, R., Morvic, M., Kučera, M., Kicin, S., Novák, J., : Electrical properties of 2DEG in the GaAs/InGaP based structures. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 223-226.

 

Kúdela, R., Kučera, M., Olejníková, B., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in InGaP/GaAs/InGaP quantum wells. J. Crystal Growth 212 (2000) 21-28.

 

  • 1999
Kúdela, R., Kučera, M., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in MOVPE grown InGaP/GaAs structures. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: IP ASCR 1999. P. 131-133.

 

Hasenöhrl, S., Novák, J., Kučera, M., Kúdela, R., : Influence of growth conditions on resistivity of ordered InxGa1-xP grown by LP-MOCVD. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: Inst. Phys. ASCR 1999. P. 127-130.

 

  • 1998
Munzar, L., Dobročka, E., Vávra, I., Kúdela, R., Harvanka, M., Christensen, N., : Antiphasing mechanism of ordered InGaP layers grown on GaAs Phys. Rev. B 57 (1998) 4642.

 

Wehmann, H., Fehly, D., Wullner, D., Bonsch, P., Schlachetzki, A., Kúdela, R., : GaAs and InP on Si with InGaP buffer layers. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 127.

 

Cambel, V., Kúdela, R., Gregušová, D., Hasenöhrl, S., Eliáš, P., Novák, J., : Characterization of 2DEG Hall probes in high magnetic field at 4,2K. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 31.

 

Cambel, V., Olejníková, B., Eliáš, P., Kúdela, R., Novák, J., Kučera, M., : Microscopic 2DEG linear Hall probe arrays Superlattice Microstruct. 24 (1998) 181.

 

Hasenöhrl, S., Kučera, M., Novák, J., Bujdák, M., Eliáš, P., Kúdela, R., : MOCVD growth of InxGa1-xAs/GaAs multiple quantum well and superlattice structures for optical modulators Solid State Electron. 42 (1998) 263.

 

Kúdela, R., Olejníková, B., Kučera, M., Hasenöhrl, S., : MOVPE growth of InGaP/GaAs interfaces. In: HEAD 97. Eds. P. Kordoš et al. NATO ASI Ser. 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 123.

 

Eliáš, P., Gregušová, D., Cambel, V., Hasenöhrl, S., Kúdela, R., Hudek, P., Novák, J., : Preparation of microscopic Hall probes and arrays. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 273.

 

Cambel, V., Eliáš, P., Kúdela, R., Novák, J., Olejníková, B., Mozolová, Ž., Majoros, M., Kvitkovič, J., Hudek, P., : Preparation, characterization and application of microscopic Hall probe arrays Solid State Electron. 42 (1998) 247.

 

Novák, J., Hasenöhrl, S., Cambel, V., Kúdela, R., Kučera, M., : Resistivity anisotropy in ordered InGaP grown at 640C. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 23.

 

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., : Resistivity anisotrophy in ordered InGaP grown at 640 C Applied Phys. Lett. 73 (1998) 369.

 

Ďurica, M., Cambel, V., Gregušová, D., Eliáš, P., Hasenöhrl, S., Kúdela, R., : Testing superconducting tapes by a 2DEG Hall probe array. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 277.

 

Kúdela, R., Eliáš, P., Kučera, M., Bonsch, P., Wullner, D., Fehly, D., Wehmann, H., Schlachetzki, A., : UV detectors based on InGaP. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 231.

 

  • 1997
Jakabovič, J., Kovačik, T., Kováč, J., Tomáška, M., Škriniarová, J., Šatka, A., Kúdela, R., : Preparation and properties of InGaP/GaAs heterojunction bipolar transistors, J. Electr. Engbn. 48 (1997) 152.

 

Malacký, L., Kúdela, R., Morvic, M., Novák, J., Wehmann, H., : Properties of silicon-pulse-doped InGaP layers grown by LP- MOCVD Mater. Sci Engn. B 44 (1997) 33.

 

Kuzmík, J., Darmo, J., Kúdela, R., Haščík, Š., Mozolová, Ž., : Schottky contacts on reactive-ion etched InGaP J. Vacuum Sci Technol. B 15 (1997) 2016.

 

Kováč, P., Cambel, V., Gregušová, D., Eliáš, P., Hušek, I., Kúdela, R., Hasenöhrl, S., Ďurica, M., : Testing of homogenity of Bi(2223)/Ag tapes by Hall probe array IoP Conf. Series No. 158 (1997) 1311.

 

Kúdela, R., Novák, J., Kučera, M., : Zn-doped InGaP grown by the LP-MOCVD J. Electron. Mater. 25 (1997) 7.

 

  • 1996
Malacký, L., Kúdela, R., Morvic, M., Černiansky, M., Peiner, E., Wehmann, H., : Deltadoped InGaP grown by low pressure metallorganic chemical vapour deposition Applied Phys. Lett. 69 (1996) 1731.

 

Kúdela, R., Vávra, I., Novák, J., Kučera, M., : Dependence of properties of LP MOCVD InGaP layers on growth conditions. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 29.

 

Cambel, V., Eliáš, P., Kúdela, R., Ďurica, M., Novák, J., : Microscopic linear Hall probe arrays Electron. Lett. 32 (1996) 1236.

 

Hasenöhrl, S., Kučera, M., Novák, J., Bujdák, M., Kúdela, R., : MOCVD growth of InxGa1-xAs/GaAs multiple quantum welland superlattice structures for quantum modulators. In: ASDAM 96. Ed. T.Lalinský et al. Bratislava: IEE SAS 1996. P. 149.

 

Dobročka, E., Vávra, I., Kúdela, R., Harvanka, M., : Ordering in InGaP prepared by MOCVD. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 217.

 

Jakabovič, J., Kovačik, T., Kováč, J., Tomáška, M., Škriniarová, J., Šatka, A., Kúdela, R., : Preparation and properties of InGaP/GaAs heterojunction bipolar transistors with tunneling emitter. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 109.

 

Cambel, V., Eliáš, P., Kúdela, R., Olejníková, B., Novák, J., Ďurica, M., Majoros, M., Kvitkovič, J., Mozolová, Ž., Hudek, P., : Preparation, characterization and application of microscopic linear hall probe arrays. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 153.

 

Kuzmík, J., Darmo, J., Haščík, Š., Kúdela, R., Mozolová, Ž., : Study of Schottky contact formation on RIE-etched InGaP. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 9.

 

Korytár, D., Francesio, L., Kúdela, R., : X-ray diffraction study of MOCVD grown InGaP. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 209.

 

  • 1995
Gregušová, D., Eliáš, P., Malacký, L., Kúdela, R., Škriniarová, J., : Wet chemical MESA etching of InGaP and GaAs with solutions based on HCl, CH3COOH and H2O2 Physica Status Solidi A 151 (1995) 113.

 

  • 1993
Kúdela, R., : Growth of In1-xGaxAs by vapour phase epitaxy and analysis of growth condictions J. Crystal Growth 133 (1993) 289.

 

  • 1989
Kúdela, R., Morvic, M., : Observation of immiscibility in InGaAsP substrates. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 121.

 

Morvic, M., Novák, J., Kúdela, R., Malacký, L., : Planar detector-construction and properties. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 319.

 

  • 1987
Kúdela, R., Morvic, M., : Phase diagram and LPE growth of quaternary InGaAsP on GaAs J. Crystal Growth 82 (1987) 717.

 

  • 1986
Kúdela, R., Morvic, M., : Immiscibility in In1-xGaxP1-xAsy lattice matched to GaAs Phys. Status Solidi A 95 (1986) K1.

 

  • 1985
Kúdela, R., : Problémy prípravy epitaxných vrstiev InGaAsP na GaAs. In: Materiály pro elektroniku. České Budějovice: DT ČSVTS 1985. S. 143.

 

  • 1984
Novák, J., Kúdela, R., Morvic, M., : Fototranzistor pre pásma 1,0-1,2µm. In: Optické komunikácie 84. Praha: ČSVTS 1984. S. 73.

 

Kúdela, R., Morvic, M., : Príprava InGaPAs pre fotodiody. In: Optické komunikácie 84. Praha: ČSVTS 1984. S. 72.

 

  • 1983
Kúdela, R., Morvic, M., : Príprava InGaAsP na GaAs kvapalnou epitaxiou, Elektrotechn. časopis 34 (1983) 79.

 

  • 1980
Kordoš, P., Morvic, M., Benč, V., Novák, J., Kúdela, R., Šafránková, J., : Príprava a vlastnosti epitaxných vrstiev Ga1-xInxAs na substrátoch GaAs, Elektrotechn. časopis 31 (1980) 427-429.