Ing. Slavomír KIČIN, PhD.

2004

KičinS., Kromka, A., Kúdela, R., Hasenöhrl, S., Schwarz, A., and Novák, J.: Micro-Raman study of InGaP composition grown on V-grooved substrates, Materials Sci Engn. B 113 (2004) 111-116.

2002

Cambel, V., KičinS., Kuliffayová, M., Kováčová, E., Novák, J., Kostič, I., and Förster, A.: Preparation of patterned GaAs structures for MEMS and MOEMS, Materials Sci Engn. C 19 (2002) 161-165.

KičinS., Cambel, V., Kuliffayová, M., Gregušová, D., Kováčová, E., Novák, J., Kostič, I., and Förster, A.: Fabrication of GaAs symmetric pyramidal mesas by wet-chemical etching using AlAs interlayer, J. Applied Phys. 91 (2002) 878-880.

2001

KičinS., Novák, J., Hasenöhrl, S., Kučera, M., and Meertens, D.: Photoluminiscence characterization of InGaP/GaAs/InGaP quantum wires, Materials Sci Engn. B 80(2001) 184-187.

2000

Novák, J., KicinS., Hasenöhrl, S., Vávra, I., Kucera, M., and Hudek, P.: InGaP/GaAs/InGaP quantum wires grown on pre-patterned substrates by MOVPE, Microelectronic Engn. 51-52 (2000) 11-17.

Kúdela, R., Morvic, M., Kučera, M., KičinS., and Novák, J.: Electrical properties of 2DEG in the GaAs/InGaP based structures. In: ASDAM 2000 : 3rd Int. EuroConf. on Advanced Semiconductor Devices and Microsystems. Piscataway, IEEE 2000. P. 223-226.

1999

KicinS., Novák, J., Kucera, M., Hasenöhrl, S., Eliáš, P., Vávra, I., and Hudek, P.: Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR, Materials Sci & Engn. B 65 (1999) 106-110.

Kičin S., Hasenöhrl S., Novák J., Vávra I., Kučera M., and Hudek P.: InGaP/GaAs/ InGaP quantum well OMVPE growth on pre-patterned GaAs substrates. In: EW MOVPE VIII. 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques. Prague June 8-11, 1999. Eds. V.Gregor and K.Závěta. Praha, Inst. of Physics ASCR 1999. P. 135-138.

Hudek P., KičinS., Novák, J., Hasenöhrl, S., and Kučera, M.: MOVPE growth of GaAs/InGaP low-dimensional structures on patterned GaAs substrates. In: Proc. of the 2ndConf. on Electrical Engn. & Information Technology for PhD students. Bratislava, FEI STU 1999. P. 1256-6.

1998

KičinS., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., and Hudek, P.: Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR. In: Heterostructure Epitaxy and Devices – HEAD’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht, Kluwer Academic Publ. 1998. P. 203.

KičinS., Novák, J., Eliáš, P., and Hudek, P.: Fabrication of quantum wires structures. In: 1st Conf. on Electr. Engn. And Inf. Technology for PhD students – ELITECH 98. Bratislava TU 1998. P. 153.

1997

Novák, J., S. KičinS., Hasenöhrl, S., Eliáš, P., Kúdela, R., and Cambel, V.: Fabrication of large density InGaP/GaAs quantum wires by MOVPE selective growth. In: In: Workshop Booklet from 7th European Workshop on MOVPE and Related Growth Techniques. Berlin 1997. C2.

1996

Srnánek, R., Németh, Š., Kováč, J., KičinS., Grietens, B., Borghs, G., Novák, J., Šestáková, V., and Pekárek, L.: Classification of morphological defects on GaAs/AlAsSb/GaSb structures prepared by MBE, J. of Crystal Growth 165 (1996) 156.

Srnánek, R., Németh, Š., Kováč, J., Šatka, A., Uherek, F., Škriniarová, J., Jakabovič, J., Hotový, I., KičinS., Borghs, G., Grietens, B., Novák, J., Šestáková, V., Pekárek, L., and Pérotin, M.: Characterization of GaAs/AlAsSb/GaSb heterostructures prepared by MBE. In: Int. Conf. on Advanced Semiconductor Devices and Microsystems – ASDAM ’96. Ed. T.Lalinský. Bratislava 1996. P. 181.