Ing. Stanislav HASENÖHRL

  • 2020

Chauhan, P., Hasenöhrl, S., Minj, A., Chauvat, M.P., Ruterana, P., and Kuzmík, J.: Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer, Applied Surface Sci 502 (2020) 144086.

  • 2019

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

Hasenöhrl, S., Chauhan, P., Dobročka, E., Stoklas, R., Vančo, Ľ., Veselý, M., Bouazzaoui, F., Chauvat, M.-P., Reterana, P., and Kuzmík, J.: Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures, Applied Phys. Express 12 (2019) 014001.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M.-P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J.jr., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., and Kuzmík, J.: Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD, J. Applied Phys. 125 (2019) 105304.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Vančo Ľ., Stoklas, R., Kováč, J., Šiffalovič, P., and Kuzmík, J.: Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer, Applied Surface Sci 470 (2019) 1-7.

Ťapajna, M., Egyenes-Pörsök, F., Hasenöhrl, S., Blaho, M., Pohorelec, O., Vincze, A., Muška, M., Noga, P., and Gregušová, D.: Investigation of GaN P-N junction processed by Mg ion implantation. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 43-46.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., and Novotný, I.: Raman enhancement of Ag nanoparticles. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 23-26.

  • 2018

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, , Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

Dobročka, E., Hasenöhrl, S., Chauhan, P., and Kuzmík, J.: Non-conventional scans in high-resolution X-ray diffraction analysis of epitaxial systems, Applied Surface Sci 461 (2018) 23-32.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Dobročka, E., Kováč, J.jr., Kováč, J., Ďurišová, J., and Pudiš, D.: Nanorods and nanocones for advanced sensor applications, Applied Surface Sci 461 (2018) 61-65.

Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., Szobolovszký, R., and Novák, J.: GaP nanocones covered with silver nanoparticles for surface-enhanced Raman spectroscopy, Applied Surface Sci 461 (2018) 149-153.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Vávra, I., Kováč, J.jr., and Kováč, J.: Deposition and properties of sulphide compunds on Gallium Phosphide nanocones. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 37-40.

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J.jr., Szobolovszký, R., and Novák, J.: Ag decorated GaP nanocones for SERS. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 204-207.

Ťapajna, M., Vincze, A., Noga, P., Dobrovodsky, J., Šagátová, A., Hasenöhrl, S., Gregušová, D., and Kuzmík, J.: Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 141-144. (VEGA 2/0012/18, APVV 14-0716, ITMS 26220220179)

  • 2017
Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Dobročka, E., Novák, J., : Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires. Applied Surface Sci 395 (2017) 162-165. (APVV 0395-12). (APVV 14-0297). (VEGA 2/0098/13). (CENTE).

 

Brytavskyi, I., Gregušová, D., Ťapajna, M., Stoklas, R., Blaho, M., Seifertová, A., Hasenöhrl, S., Dobročka, E., Kuzmík, J., : Hafnium oxide as a promising material for gate isolation in GaN-based MOS HFETs In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 207-210.. (VEGA 2/0109/17). (VEGA 2/0104/17).

 

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J., : Methanol sensor for integration with GaP nanowire photocathode. Proc. SPIE 10248, Nanotechnology VIII (2017) 102480E.

 

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Novotný, I., Kováč, J., Valentin, M., Kováč, J., Ďurišová, J., Pudiš, D., : Optical and mechanical properties of a compact ZnO layer with embedded GaP nanowires. Applied Surface Sci 395 (2017) 180-184. (APVV 0395-12). (APVV 14-0297). (VEGA 2/0098/13).

 

Laurenčíková, A., Dérer, J., Hasenöhrl, S., Eliáš, P., Novák, J., : Preparation of methanol concentration sensor with nanostructured surface In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 243-246.. (APVV 14-0297). (VEGA 2/0104/17). (CENTE II).

 

Novák, J., Hasenöhrl, S., Eliáš, P., Laurenčíková, A., Kováč, J., Szobolovszký, R., Nevřela, J., : Preparation of nanocones for SERS applications In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 1-4. (APVV 14-0297). (APVV 0301-10). (VEGA 2/0104/17).

 

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., Kováč, J., Valentin, M., Kováč, J., : Reinforcement role of GaP nanowires in a ZnO layer prepared by RF sputtering,. Vacuum 138 (2017) 218-223. (APVV 0395-12). (APVV 14-0297). (VEGA 2/0098/13). (CENTE).

 

Chauhan, P., Hasenöhrl, S., Hulman, M., Kováč, J., Rosová, A., Šiffalovič, P., Kuzmík, J., : Study of surface morphology and optical properties of InAlN epilayers grown on c-sapphire at different temperatures by MOCVD In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 125-128.. (APVV 15-0031).

 

  • 2016
Laurenčíková, A., Lettrichová, I., Pudiš, D., Hasenöhrl, S., Šušlik, Ľ., Haščík, Š., Dérer, J., Novák, J., : Integration of fresnel structure on AlGaAs/GaAs led devices In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 179-182.

 

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., : Young modulus and microhardness of ZnO nanolayers prepared by RF sputtering In: 19. Škola vák. techniky. Eds. M. Michalka, A. Vincze. Bratislava: SVS, 2016. P. 34-38. ISBN 978-80-971179-7-9.. (APVV 0395-12). (APVV 14-0297). (VEGA 2/0098/13).

 

  • 2015
Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Novák, J., : Covering of GaP NW arrays with ZnO layer prepared at different sputering conditions In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 71-74.. (APVV 0395-12). (VEGA 2/0098/13). (CENTE).

 

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Kováč, J., Kováč, J., Eliáš, P., Novák, J., : Formation of compact covering of vertically standing GaP nanowire arrays by Ga-doped ZnO layer. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 93.

 

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., Kováč, J., Valentin, M., Kováč, J., : Optical and mechanical properties of compact ZnO layer with embedded GaP nanowires. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 104.

 

Novák, J., Telek, P., Hasenöhrl, S., Laurenčíková, A., : Spin injection in AlGaAs/GaAs LED with an incorporated in MnAs layer In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 31-33. (APVV 0301-10). (APVV 0395-12). (VEGA 2/0098/13).

 

  • 2014
Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J., Mikolášek, M., Vávra, I., Novák, J., : Analysis of the core–shell interface between zinc-blende GaP and wurtzite ZnO. Solid-State Electr. 100 (2014) 7-10. (APVV 0301-10). (APVV 0395-12). (VEGA 2/0098/13).

 

Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Rosová, A., Novák, J., : Annealing of gold nanoparticles on GaP(111)B: initial stage of GaP nanowire growth. Phys. Status Solidi RRL 8 (2014) 321-324. (APVV 0301-10). (CENTE).

 

Novák, J., Šutta, P., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., : Columnar microstructure of the ZnO shell layer deposited on the GaP nanowires. Applied Surface Sci 312 (2014) 162-166. (APVV 0301-10). (APVV 0395-12). (VEGA 2/0098/13).

 

Laurenčíková, A., Hasenöhrl, S., Dérer, J., Eliáš, P., Hronec, P., Kováč, J., Novák, J., : Fabrication of GaP nanowire arrays on top InGaP solar cells In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 259-262. (APVV 0301-10). (APVV 0395-12). (VEGA 2/0098/13). (CENTE).

 

Novák, J., Eliáš, P., Hasenöhrl, S., Vávra, I., Križanová, Z., Novotný, I., Kováč, J., : Growth and properties of core-shel GaP/ZnO nanowires. AIP Conf. Proc. 1598 (2014) 118.

 

Búc, D., Kováč, J., Kutiš, V., Murín, J., Čaplovičová, M., Škriniarová, J., Novák, P., Novák, J., Hasenöhrl, S., Dobročka, E., : Residual stress in RF magnetron deposited ZnO/GaP thin films and nanowires In: Proc. of the jointly organized WCCM XI, ECCM V, ECFD VI. Eds. E. Oñate et al. Barcelona: CIMNE 2014. ISBN: 978-84-942844-7-2. P. 2846-2856. (VEGA 2-0147-11).

 

  • 2013
Novák, J., Laurenčíková, A., Vávra, I., Hasenöhrl, S., Reiffers, M., : Magnetic properties of InMnAs nanodots prepared by MOVPE. J. Magnetism Magnetic Mater. 327 (2013) 20-23. (VEGA 2/0081/09). (APVV 0301-10).

 

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., Novák, J., :Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Sci 267 (2013) 60-64. (ITMS 2624220028). (APVV 0301-10). (ITMS 26240220041).

 

Lettrichová, I., Pudiš, D., Laurenčíková, A., Hasenöhrl, S., Novák, J., Škriniarová, J., Kováč, J., : Predefined planar structures in semiconductor surfaces patterned by NSOM lithography Proc. SPIE 8816 (2013) 8816-45.

 

Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., Mikulics, M., Grünberg, P., : Properties of individual GaP/ZnO core-shell nanowires with radial PN junction, Proc. SPIE 8766 (2013) 8766-8.

 

Novák, J., Križanová, Z., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., Kováč, J., Šutta, P., Mikulics, M., : Structural and optical properties of individual GaP/ZnO core-shell nanowires. Vacuum 98 (2013) 106-110. (APVV 0301-10). (VEGA 2/0081/09).

 

Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Laurenčíková, A., Novák, J., : Zinc-doped gallium phosphide nanowires for photovoltaic structures,. Applied Surface Sci 269 (2013) 72-76. (VEGA 2/0081/09). (APVV 0301-10). (APVV LPP-0162-09).

 

  • 2012
Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., Mikulics, M., : Electrical and photoluminescence properties of individual GaP nanowires doped by zinc Phys. Status Solidi a 209 (2012) 2505-2509. (APVV 0301-10). (APVV LPP-0162-09). (VEGA 2/0081/09).

 

Laurenčíková, A., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Novák, J., : GaP/ZnO nanowires with a radial pn heterojunction. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 115-118.

 

Novák, J., Mikulics, M., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., : Photoluminescence of single GaP/ZnO core-shell nanowires. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 127-130.

 

Novák, J., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Križanová, Z., Vávra, I., Stoklas, R., : Preparation of thin Ga-doped ZnO layers for core–shell GaP/ZnO nanowires. Applied Surface Sci 258 (2012) 7607-7611.(VEGA 2/0081/09). (APVV 0301-10).

 

Kováč, J., Čaplovičová, M., Búc, D., Brath, T., Kováč, J., Eliáš, P., Hasenöhrl, S., Novák, J., : Properties of GaP/ZnO heterostructures for photovoltaics. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 263-266.

 

Križanová, Z., Vávra, I., Hasenöhrl, S., Novák, J., : TEM analysis of InMnAs layers and dots prepared by low pressure MOVPE. Vacuum 86 (2012) 657-660. (VEGA 2/0081/09). (VEGA 2/6100/26).

 

  • 2011
Hasenöhrl, S., Novák, J., Vávra, I., Šoltýs, J., Kučera, M., Šatka, A., : Epitaxial growth of GaP/InxGa1-xP (xIn ≥ 0,27) virtual substrate for optoelectronic applications, J. Electr. Engn. 62 (2011) 93-98.

 

Hasenöhrl, S., Eliáš, P., Vávra, I., Novotný, I., Kováč, J., Novák, J., : GaP/ZnO core-shell nanowires – growth and characterization. In: EW-MOVPE XIV. Ed. J. Prazmowska. Wroclaw: House of Wroclaw Univ. Technol. 2011. ISBN 978-83-7493-599-9. P. 259-262.

 

Kováč, J., Brath, T., Novotný, I., Bruncko, J., Búc, D., Kadar, O., Hasenöhrl, S., Novák, J., : Growth and characterization of GaP/ZnO heterojunction properties. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 40-43.

 

Novák, J., Telek, P., Vávra, I., Hasenöhrl, S., Reiffers, M., : MOVPE growth and properties of light emitting diodes with an incorporated InMnAs ferromagnetic layer. J. Crystal Growth 315 (2011) 78-81. (VEGA 2/0081/09).

 

Novák, J., Vávra, I., Hasenöhrl, S., Reiffers, M., Štrichovanec, P., Magen, C., : Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE. J. Crystal Growth 318 (2011) 576-579. (VEGA 2/0081/09).

 

  • 2010
Novák, J., Vávra, I., Križanová, Z., Hasenöhrl, S., Šoltýs, J., Reiffers, M., Štrichovanec, P., : Dependence of Curie temperature on surface strain in InMnAs epitaxial structures. Applied Surface Sci 256 (2010) 5672-5675.

 

Telek, P., Hasenöhrl, S., Šoltýs, J., Vávra, I., Držík, M., Novák, J., : Design, preparation and properties of spin-LED structures based on InMnAs. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 175-178.

 

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Vávra, I., : Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE. Mater. Sci Semicond. Proc. 13 (2010) 167-172.

 

  • 2009
Novák, J., Vávra, I., Šoltýs, J., Hasenöhrl, S., Reiffers, M., Štrichovanec, P., : Effect of nanodimension on the properties of III-V ferromagnetic semiconductors. In: Proc. 17th Conf. Slovak Physicists. Ed. M. Reiffers. Bratislava: Slovak Phys. Soc., 2009. ISBN 978-80-969124-7-6. P. 13-16.

 

  • 2008
Novák, J., Vávra, I., Hasenöhrl, S., Šoltýs, J., Štrichovanec, P., Balazsi, K., : Influence of GaAs cap layer on the relaxation of InMnAs dots. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 171-174.

 

Novák, J., Eliáš, P., Šoltýs, J., Hasenöhrl, S., Vávra, I., : InMnAs dots grown on GaAs surfaces etched via AlAs sacrificial layer. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 219-222.

 

Hasenöhrl, S., Kučera, M., Morvic, M., Novák, J., : OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 111-114.

 

  • 2007
Gregušová, D., Kučera, M., Hasenöhrl, S., Vávra, I., Štrichovanec, P., Martaus, J., Novák, J., : Impact of growth conditions on the spatial non-uniformities of composition in InGaP epitaxial layers. Physica Status Solidi c 4 (2007) 1419-1422.

 

Novák, J., Hasenöhrl, S., Vávra, I., Kučera, M., : Influence of surface strain on the MOVPE growth on InGaP epitaxial layers. Applied Phys. 87 (2007) 511-516.

 

Hasenöhrl, S., Kučera, M., Morvic, M., Novák, J., : Manganese incorporation during the OMVPE growth of GaAs. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 117-120.

 

Novák, J., Hasenöhrl, S., Kučera, M., Vávra, I., Štrichovanec, P., Kováč, J., Vincze, A., : Photoluminiscence and TEM characterization of (AlyGa1-y)1-x InxP layers grown on graded buffers. Physica Status Solidi c 4 (2007) 1503-1507.

 

Novák, J., Hasenöhrl, S., Vávra, I., Sedlačková, K., Kučera, M., Radnóczi, G., : Role of the V-III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE. J. Crystal Growth 298 (2007) 76-80.

 

  • 2006
Peternai, L., Kováč, J., Irmer, G., Hasenöhrl, S., Novák, J., Srnánek, R., : Investigation of graded InxGa1-xP buffer by Raman scattering method. Microelectr. J. 37 (2006) 487-490.

 

Vincze, A., Šatka, A., Peternai, L., Kováč, J., Hasenöhrl, S., Veselý, M., : SIMS and SEM analysis of In1-x-yP LED structure grown on In1-xP graded buffer. Applied Surface Sci 252 (2006) 7279-7282.

 

Novák, J., Hasenöhrl, S., Vávra, I., Kučera, M., : Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates. Applied Surface Sci 252 (2006) 4178-4184.

 

  • 2005
Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., : Growth and characterisation of InxGa1-xP layers with composition close to crossover from direct to indirect band gap. J. Crystal Growth 275 (2005) e1281-e1286.

 

  • 2004
Hasenöhrl, S., Novák, J., Vávra, I., Šatka, A., : Material properties of graded composition InxGa1−xP buffer layers grown on GaP by organometallic vapor phase epitaxy. J. Crystal Growth 272 (2004) 633-641.

 

Kicin, S., Kromka, A., Kúdela, R., Hasenöhrl, S., Schwarz, A., Novák, J., : Micro-Raman study of InGaP composition grown on V-grooved substrates. Materials Sci Engn. B 113 (2004) 111-116.

 

Novák, J., Hasenöhrl, S., Kučera, M., Šoltýs, J., : Nano-patterning surfaces by the self-organized growth of ordered and strained epitaxial layers. Superlatt. Microstruct. 36 (2004) 123-131.

 

Kováč, J., Peternai, L., Jakabovič, J., Šatka, A., Hasenöhrl, S., Novák, J., Gottschalch, V., Rheinländer, B., : New development of LED structures directly grown on GaP substrate. In: Proc. Inter. Conf. Electroluminiscence 2004. Toronto: 2004. P. 236-240.

 

Hasenöhrl, S., Betko, J., Morvic, M., Novák, J., Fedor, J., : Resistivity and mobility in ordered InGaP grown by MOVPE. Physica Status Solidi (c) 1 (2004) 382-387.

 

Eliáš, P., Kostič, I., Šoltýs, J., Hasenöhrl, S., : Wet-etch bulk micromachining of (100) InP substrates. J. Micromech. Microengn. 14 (2004) 1205–1214.

 

  • 2003
Hasenöhrl, S., Novák, J., Kúdela, R., Betko, J., Morvic, M., Fedor, J., : Anisotropy in transport properties of ordered strained InGaP. J. Crystal Growth 248 (2003) 369.

 

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Influence of ordered and random parts on properties of InGaP alloy grown by MOVPE. In: EW MOVPE X. Univ. Lecce 2003. P. 161.

 

Kúdela, R., Štrichovanec, P., Gregušová, D., Cambel, V., Šoltýs, J., Hasenöhrl, S., Novák, J., Kostič, I., Attolini, G., Pelosi, C., : MOVPE growth of AlGaAs/GaAs and InGaP/GaAs structures on patterned GaAs substrates. In: EW MOVPE X. Univ. Lecce 2003. P. 219.

 

Hasenöhrl, S., Betko, J., Morvic, M., Novák, J., Fedor, J., : Temperature dependent magnetoresistance characterization of ordered strained InGaP grown by MOVPE. In: EW MOVPE X. Univ. Lecce 2003. P. 163.

 

  • 2002
Hasenöhrl, S., Kúdela, R., Novák, J., Tuomi, T., Knuuttila, L., : Anisotropic surface structure in ordered strained InGaP. Materials Sci Engn. B 88 (2002) 134-138.

 

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Effect of strain and ordering on the band-gap energy of InGaP. Materials Sci Engn. B 88 (2002) 139-142.

 

Eliáš, P., Hasenöhrl, S., Fedor, J., Cambel, V., : Hall bar device processing on patterned substrates using optical lithography. Sensors Actuators A 101 (2002) 150-155.

 

Cambel, V., Eliáš, P., Gregušová, D., Hasenöhrl, S., Kúdela, R., Fedor, J., : Mikroskopická magnetometria. In: 12. Konf. slov. fyzikov. Eds. M.Reiffers, L.Just. Košice: Slov. fyzik. spol. 2002. P. 68.

 

Eliáš, P., Kostič, I., Hasenöhrl, S., : Polar diagram of wet-etched (100) InP. In: 14th Indium Phosphide and Related Materials Conf. Piscataway: IEEE 2002. ISBN: 1092-8669. P. 229-231.

 

  • 2001
Novák, J., Hasenöhrl, S., Alonso, M., Garriga, M., : Influence of tensile and compressive strain on the band gap energy of ordered InGaP. Applied Phys. Lett. 79 (2001) 2758-2760.

 

Kuzmík, J., Hasenöhrl, S., Kúdela, R., Haščík, Š., Mozolová, Ž., Lalinský, T., Breza, J., Vogrinčič, P., Škriniarová, J., Fox, A., Kordoš, P., : InGaAs/InGaP HEMTs: technological optimization and analytical modelling. Vacuum 61 (2001) 333-337.

 

Eliáš, P., Cambel, V., Hasenöhrl, S., Kostič, I., : MOCVD growth of InP and InGaAs on InP non-planar substrates patterned with {1 1 0} quasi facets. J. Crystal Growth 233 (2001) 141-149.

 

Kicin, S., Novák, J., Hasenöhrl, S., Kučera, M., Meertens, D., : Photoluminescence characterization of InGaP/GaAs/InGaP quantum wires. Materials Sci & Engn. B 80 (2001) 184-187.

 

Lalinský, T., Škriniarová, J., Kuzmík, J., Hasenöhrl, S., Fox, A., Tomáška, M., Mozolová, Ž., Kordoš, P., Kovačik, T., Haščík, Š., : Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs. Vacuum 61 (2001) 323-327.

 

  • 2000
Cambel, V., Karapetrov, G., Eliáš, P., Hasenöhrl, S., Kwok, W., Krause, J., Maňka, J., : Approaching the pT range with a 2DEG InGaAs/InP Hall sensor at 77 K. Microelectr. Engn. 51-52 (2000) 333-342.

 

Eliáš, P., Hasenöhrl, S., Cambel, V., Kostič, I., : Crystallographic dependence of OMVPE InGaAs/InP lateral growth on patterned (100) InP substrates prepared by wet etching. Thin Solid Films 380 (2000) 105-107.

 

Attolini, G., Bocchi, C., Germini, F., Pelosi, C., Parisini, A., Tarricone, L., Kúdela, R., Hasenöhrl, S., : Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE Materials Chemistry & Physics 66 (2000) 246-252.

 

Kúdela, R., Kučera, M., Olejníková, B., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in InGaP/GaAs/InGaP quantum wells. J. Crystal Growth 212 (2000) 21-28.

 

Novák, J., Kicin, S., Hasenöhrl, S., Vávra, I., Kučera, M., Hudek, P., : InGaP/GaAs/InGaP quantum wires grown on pre-patterned substrates by MOVPE. Microelectr. Engn. 51-52 (2000) 11-17.

 

  • 1999
Novák, J., Hasenöhrl, S., Cambel, V., Kučera, M., Wehmann, H., Wuellner, D., : Electrical and morphological properties of InGaP Mater. Sci Engn. B 66 (1999) 102-105.

 

Kúdela, R., Kučera, M., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in MOVPE grown InGaP/GaAs structures. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: IP ASCR 1999. P. 131-133.

 

Mareš, J., Krištofik, J., Hubík, P., Feng, X., Novák, J., Hasenöhrl, S., : Highly disordered two-dimensional electron systém in a weak magnetic field Europhys. Lett. 45 (1999) 374-380.

 

Hasenöhrl, S., Novák, J., Kučera, M., Kúdela, R., : Influence of growth conditions on resistivity of ordered InxGa1-xP grown by LP-MOCVD. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: Inst. Phys. ASCR 1999. P. 127-130.

 

Kicin, S., Hasenöhrl, S., Novák, J., Vávra, I., Kučera, M., Hudek, P., : InGaP/GaAs/ InGaP quantum well OMVPE growth on pre-patterned GaAs substrates. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: Inst. Phys. ASCR 1999. P. 135-138.

 

Dubecký, F., Darmo, J., Zaťko, B., Krempasky, M., Hasenöhrl, S., Procházková, O., Bešše, I., Sekáčová, M., Boháček, P., Pelfer, P., Nečas, V., : Investigation of X-ray and γ-ray detectors based on GaAs and InP with electrodes grown by MOCVD. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: Inst. Phys. ASCR 1999. P. 263.

 

Hudek, P., Kicin, S., Novák, J., Hasenöhrl, S., Kučera, M., : MOVPE growth of GaAs/InGaP low-dimensional structures on patterned GaAs substrates. In: ELITECH `99. Eds.: J.Tóbik, R.Redhammer. Bratislava: STU 1999. P. 125-126.

 

Kicin, S., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., Vávra, I., Hudek, P., : Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR Materials Sci Engn. B 65 (1999) 106-110.

 

Eliáš, P., Cambel, V., Hasenöhrl, S., Hudek, P., Novák, J., : SEM and AFM characterisation of high MESA patterned InP subtrated prepared by wet etching Mater. Sci Engn. B 66 (1999) 15-20.

 

  • 1998
Cambel, V., Kúdela, R., Gregušová, D., Hasenöhrl, S., Eliáš, P., Novák, J., : Characterization of 2DEG Hall probes in high magnetic field at 4,2K. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 31.

 

Cambel, V., Gregušová, D., Eliáš, P., Hasenöhrl, S., Olejníková, B., Novák, J., Schaepers, T., Neurohr, K., Fox, A., : Characterization of InGaAs/InP microscopic Hall probe arrays with 2DEG active layer Mater. Sci Engn. B 51 (1998) 188.

 

Hasenöhrl, S., Kučera, M., Novák, J., Bujdák, M., Eliáš, P., Kúdela, R., : MOCVD growth of InxGa1-xAs/GaAs multiple quantum well and superlattice structures for optical modulators Solid State Electron. 42 (1998) 263.

 

Kúdela, R., Olejníková, B., Kučera, M., Hasenöhrl, S., : MOVPE growth of InGaP/GaAs interfaces. In: HEAD 97. Eds. P. Kordoš et al. NATO ASI Ser. 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 123.

 

Morvic, M., Betko, J., Hasenöhrl, S., Gregušová, D., Cambel, V., Eliáš, P., Novák, J., : On quantum Hall resistance and Shubnikov de Haas effect measurements on InP/InGaAs structures. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 285.

 

Mareš, J., Krištofik, J., Hubík, P., Hulicius, E., Melichar, K., Pangrác, J., Novák, J., Hasenöhrl, S., : Out-of-plane weak localization in two-dimensional electron structures Phys. Rev. Lett. 80 (1998) 4020.

 

Eliáš, P., Gregušová, D., Cambel, V., Hasenöhrl, S., Kúdela, R., Hudek, P., Novák, J., : Preparation of microscopic Hall probes and arrays. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 273.

 

Kicin, S., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., Hudek, P., : Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 203.

 

Novák, J., Hasenöhrl, S., Cambel, V., Kúdela, R., Kučera, M., : Resistivity anisotropy in ordered InGaP grown at 640C. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 23.

 

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., : Resistivity anisotrophy in ordered InGaP grown at 640 C Applied Phys. Lett. 73 (1998) 369.

 

Novák, J., Hasenöhrl, S., Kučera, M., Hjelt, K., Tuomi, T., : Sulphur doping of GaSb grown by atmospheric pressure MOVPE J. Crystal Growth 183 (1998) 69.

 

Mareš, J., Krištofik, J., Hubík, P., Novák, J., Hasenöhrl, S., : Temperature dependent quasiplateaux of Hall effect in multi-d-layers. In: HEAD 97. Eds. P. Kordoš et al. NATO ASI Ser. 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 75.

 

Ďurica, M., Cambel, V., Gregušová, D., Eliáš, P., Hasenöhrl, S., Kúdela, R., : Testing superconducting tapes by a 2DEG Hall probe array. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 277.

 

  • 1997
Kováč, P., Cambel, V., Gregušová, D., Eliáš, P., Hušek, I., Kúdela, R., Hasenöhrl, S., Ďurica, M., : Testing of homogenity of Bi(2223)/Ag tapes by Hall probe array IoP Conf. Series No. 158 (1997) 1311.

 

  • 1996
Rheinländer, B., Gottschalch, V., Kováč, J., Uherek, F., Šatka, A., Hasenöhrl, S., Barna, A., Wood, J., : (AlGa)InAs-InP resonant-cavity structure for infrared region PIN photodiodes. In: Proc. 23th Inter. Conf. Phys. Semicond. Vol. 4. Eds.: M.Scheffler and R.Zimmermann. Singapore: World Sci 1996. P. 3239.

 

Kováč, J., Uherek, F., Šatka, A., Waclawek, J., Jakabovič, J., Srnánek, R., Rheinländer, B., Gottschalch, V.,Hasenöhrl, S., Novák, J., Barna, A., Wood, J., : InAlGaAS-InGaAs-InP RCE PIN Photodiode for 1300nm wavelength region. In: 8th Inter. Conf. Indium Phosphide Related Materials – IPRM ’96. Ed. J.Lorenzo. Piscataway: IEEE 1996. P. 219.

 

Hasenöhrl, S., Hardtdegen, H., Ungermanns, C., : Influence of carrier Gas on AlAs, GaAs and InP MOCVD growth. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 21.

 

Hasenöhrl, S., Kučera, M., Novák, J., Bujdák, M., Kúdela, R., : MOCVD growth of InxGa1-xAs/GaAs multiple quantum welland superlattice structures for quantum modulators. In: ASDAM 96. Ed. T.Lalinský et al. Bratislava: IEE SAS 1996. P. 149.

 

Uherek, F., Šatka, A., Kováč, J., Jakabovič, J., Srnánek, R., Borgulová, J., Gottschalch, V., Hasenöhrl, S., Rheinländer, B., : RCE PIN photodiodes for 1300 nm wavelength. In: ASDAM 96. Ed. T.Lalinský et al. Bratislava: IEE SAS 1996. P. 117.

 

  • 1995
Hasenöhrl, S., Hardtdegen, H., Ungermanns, C., : MOCVD growth of GaAs, AlAs an InP using H2/N2 ambient mixturees. In: 6th Europ. Workshop MOVPE and Related Growth Techn. Gent: 1995 D-12.

 

  • 1994
Hardtdegen, H., Ungermanns, C., Hollfelder, M., Raafat, T., Carius, R., Hasenöhrl, S., Lüth, H., : A new approach towards low-pressure metalorganic vapor phase epitaxy of (AlGa)As using triethylgallium and dimethylethylaminealane J. Crystal Growth 145 (1994) 478-484.

 

  • 1993
Novák, J., Hasenöhrl, S., Malacký, L., : Large activation of praseodymium in In0.53Ga0.47As Semicond. Sci Technol. 8 (1993) 747.

 

Hjelt, K., Sopanen, M., Lipsanen, H., Tuomi, T., Hasenöhrl, S., : Praseodymium dioxide doping of In1-xGaxAsyP1-y epilayer grown with liquid phase epitaxy. In: Rare Earth Doped Semicond. Mater. Research Soc Symp. Proc. 301 (1993) 27.

 

  • 1992
Hjelt, K., Sopanen, M., Lipsanen, H., Tuomi, T., Hasenöhrl, S., : The effect of praseodymium dioxide on the optical properties of LPE-grown InGaAsP layers. In: Optoelectr. Lab. Annual Report. Helsinki: Univ. Technol. 1992. P. 26.

 

  • 1991
Novák, J., Hasenöhrl, S., Kuliffayová, M., : Gettering properties of PrO2 in In0.53Ga0.47As LPE growth J. Crystal Growth 110 (1991) 862.

 

Kuliffayová, M., Novák, J., Hasenöhrl, S., Kacerovský, P., : Growth and properties of the n-type In0.53Ga0.47As LPE layers using rare-earth element oxide, Crystal Propert. Preparation 32-34 (1991) 607.

 

  • 1989
Hasenöhrl, S., Novák, J., : Nízkoteplotná difúzia Zn do InO.53Ga0.47As, Elektrotechn. časopis 40 (1989) 251.

 

Kuliffayová, M., Novák, J., Morvic, M., Hasenöhrl, S., : Preparation of the undoped InGaAs/InP LPE layers, Crystal Propert. Preparation 19-20 (1989) 227.

 

Hasenöhrl, S., Novák, J., Morvic, M., : Zn difussion in GaInAs, Crystal Proper. Preparation 19-20 (1989) 235.

 

  • 1988
Kollár, L., Ušák, P., Kokavec, J., Hasenöhrl, S., Morvic, M., : Meranie parametrov Hallových sond na báze GaAs, Elektrotechn. časopis 39 (1988) 912.