Juraj ARBET

  • 2019

Huran, J., Boháček, P., Perný, M., Mikolášek, M., Skuratov, V.A., Kobzev, A.P., Šály, V., and Arbet, J.: Radiation hardness investigation of heterojunction solar cell structures with TCO antireflection films, J. Phys.: Conf. Ser. 1319 (2019) 012016.

  • 2018

Balalykin, N.I., Huran, J., Nozdrin, M.A., Feshchenko, A.A., Kobzev, A.P., Sasinková, V., Boháček, P., and Arbet, J.: Reactive magnetron sputtering of N-doped carbon thin films on quartz glass for transmission photocathode applications, J. Phys.: Conf. Ser. 992 (2018) 012031.

  • 2017
Huran, J., Mikolášek, M., Perný, M., Šály, V., Kleinová, A., Sasinková, V., Kobzev, A.P., and Arbet, J.: HWCVD of B-doped silicon carbide thin films for SHJ solar cell technology, J. Integrated Ferroelectr. 184 (2017) 23-31.

Zaťko, B., Hrubčín, L., Sedlačková, K., Boháček, P., Šagátová, A., Sekáčová, M., Arbet, J., Skuratov, V., Nečas, V., : High energy ion detection using 4H-SiC semiconductor detector In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 154-157.. (VEGA 2/0152/16)(APVV 0321-11)(ITMS 26220220170).

 

Perný, M., Šály, V., Packa, J., Mikolášek, M., Váry, M., Huran, J., Hrubčín, L., Skuratov, V., Arbet, J., :Influnce of exposure with Xe radiation on heterojunction solar cell a-SiC/c-Si studied by impedance spectroscopy. J. Phys.: Conf. Ser. 829 (2017) 012016. (APVV 0443-12)(VEGA 1/0651/16).

 

Huran, J., Boháček, P., Kleinová, A., Sasinková, V., Kobzev, A., Arbet, J., Kováčová, E., Sekáčová, M., : PECVD silicon carbide films for electromagnetic energy absorption in the 0.1-2.0THz frequency range In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 203-206.. (APVV 0443-12)(ITMS 26220220170).

 

Huran, J., Balalykin, N., Boháček, P., Nozdrin, M., Kováčová, E., Kobzev, A., Haščík, Š., Sekáčová, M., Arbet, J., Ryzá, J., : PECVD silicon carbide films on quartz glass as prospective transmission photocathodes In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 150-153.. (APVV 0443-12).

 

Huran, J., Boháček, P., Hrubčín, L., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Kováčová, E.,Arbet, J., : PECVD silicon carbide thin films for harsh environment applications In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 215-218.. (APVV 0443-12)(VEGA 1/0651/16)(ITMS 26220220170).

 

2016
Huran, J., Balalykin, N., Haščík, Š., Feshchenko, A., Kobzev, A., Sasinková, V., Kleinová, A., Arbet, J., : Dry etching of phosphorus doped SiC thin films prepared by PECVD technology for transmission photocathode In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 35-38. (APVV 0443-12).

 

Zaťko, B., Hrubčín, L., Šagátová, A., Boháček, P., Dubecký, F., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., Skuratov, V., : Particle detectors based on 4H-SiC epitaxial layer and their properties In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 141-144. (VEGA 2/0152/16)(APVV 0321-11)(APVV 0443-12)(ITMS 26220220170).

 

Huran, J., Boháček, P., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Hrubčín, L., Arbet, J., Sekáčová, M., : Silicon carbide thin films deposited by PECVD technology for applications in photoelectrochemical water splitting devices In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 215-219. (APVV 0443-12).

 

Zaťko, B., Šagátová, A., Boháček, P., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., : The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs. J. Instrument. 11 (2016) C01076. (VEGA 2/0062/13)(VEGA 2/0175/13)(APVV 0321-11)(APVV 0443-12)(ITMS 26220220170)(CENTE).

 

Zaťko, B., Šagátová, A., Boháček, P., Sekáčová, M., Arbet, J., Nečas, V., : The thermal neutron detection using 4H-SiC detectors with 6LiF conversion layer. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 37-41. (VEGA 2/0152/16)(APVV 0321-11)(CENTE II)(APVV 0443-12).

 

Balalykin, N., Huran, J., Nozdrin, M., Feshchenko, A., Kobzev, A., Arbet, J., : Transmission photocathodes based on stainless steel mesh and quartz glass coated with n doped DLC thin films prepared by reactive magnetron sputtering. J. Phys.:Conf. Ser. 700 (2016) 012050.

 

Huran, J., Perný, M., Hrubčín, L., Skuratov, V., Šály, V., Mikolášek, M., Kobzev, A., Arbet, J., : Xe ion irradiation of heterojunction solar cell structures with ITO antireflection film In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 151-154. (APVV 0443-12)(APVV 0321-11).

 

2015
Huran, J., Mikolášek, M., Boháček, P., Kleinová, A., Sasinková, V., Kobzev, A., Sekáčová, M., Arbet, J., : HWCD technology of silicon carbide thin films: properties In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 104-107. (APVV 0443-12)(APVV 0321-11)(VEGA 2/0062/13)(VEGA 2/0175/13)(VEGA 2/0173/13).

 

Huran, J., Boháček, P., Kobzev, A., Kleinová, A., Sasinková, V., Sekáčová, M., Arbet, J., : Plasma-enhanced chemical vapour deposition of B-doped silicon carbide thin films for heterojunction application. In: 22nd Inter. Symp. on Plasma Chemistry. Antwerpy 2015. Proc. Extend. Abstracts P-III-6-22. (APVV 0443-12)(VEGA 2/0062/13)(VEGA 2/0175/13)(VEGA 2/0173/13).

 

Sasinková, V., Huran, J., Kleinová, A., Boháček, P., Arbet, J., Sekáčová, M., : Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment,. Proc. SPIE 9563 (2015) 95630V. (APVV 0443-12)(VEGA 2/0062/13)(VEGA 2/0175/13)(VEGA 2/0173/13).

 

Huran, J., Balalykin, N., Feshchenko, A., Kobzev, A., Sasinková, V., Kleinová, A., Arbet, J., : Transmission photocathodes based on quartz glass coated with N or P-doped SiC thin films prepared by HWCVD technology In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 186-189. (APVV 0443-12).

 

2014
Huran, J., Balalykin, N., Feshchenko, A., Kováč, J., Kobzev, A., Arbet, J., : Deuterated diamond like carbon films prepared by reactive magnetron sputtering for transmission photocathode application In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 247-250. (APVV 0443-12).

 

Huran, J., Kleinová, A., Sasinková, V., Kobzev, A., Boháček, P., Sekáčová, M., Arbet, J., : Plasma enhanced chemical vapor deposition of low-k a-SiC:H thin films:FTIR study of chemical bonding In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 168-171. (APVV 0443-12)(APVV 0321-11)(VEGA 2/0062/13)(VEGA 2/0175/13)(VEGA 2/0173/13).

 

Huran, J., Boháček, P., Kulikov, S., Bulavin, M., Sasinková, V., Kleinová, A., Kobzev, A., Sekáčová, M., Arbet, J., : Radiation hardness investigation of PECVD silicon carbide layers for PV applications.. In: 40th IEEE Photovoltaic Specialist Conf. – PVSC. IEEE 2014. ISBN: 978-147994398-2. P. 1815-1820. (APVV 0443-12)(VEGA 2/0062/13)(VEGA 2/0175/13)(VEGA 2/0173/13).

 

2013
Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Sasinková, V., Balalykin, N., Sekáčová, M.,Arbet, J., : Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.. (APVV 0713-07)(APVV 0321-11)(VEGA 2/0062/13)(VEGA 2/0175/13)(VEGA 2/0173/13).

 

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Sasinková, V., Balalykin, N., Sekáčová, M.,Arbet, J., : Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications.. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.

 

Huran, J., Valovič, A., Boháček, P., Shvetsov, V., Kobzev, A., Borzakov, S., Kleinová, A., Sekáčová, M.,Arbet, J., Sasinková, V., : The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition,. Applied Surface Sci 267 (2013) 88-91. (APVV 0713-07)(VEGA 2/0192/10)(VEGA 2/0144/10).