Mgr. Agáta LAURENČÍKOVÁ, PhD.

  • 2021

Pudiš, D., Urbancová, P., Novák, J., Kuzma, A., Lettrichová, I., Goraus, M., Eliáš, P., Laurenčíková, A., Jandura, D., Šušlik, Ľ., and Hasenöhrl, S.: Near-field analysis of GaP nanocones, Applied Surface Sci 539 (2021) 148213.

Škriniarová, J., Hronec, P., Chlpík, J., Laurenčíková, A., Kováč, J.jr., Novák, J., and Andok, R.: Investigation of volume fraction of GaP nanowires by SEM characterization and spectroscopic ellipsometry, Optik 234 (2021) 166572.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., and Kováč, J.Jr.: Influence of edge rich surface on growth of MoS2 from thin molybdenum layer. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 5-8.

  • 2020

Lettrichová, I., Pudiš, D., Laurenčíková, A., Novák, J., Kuzma, A., Goraus, M., Gaso, P., and Jandura, D.: Near and far-field analysis of Fresnel structures applied in the LED surface, Applied Surface Sci 531 (2020) 147300.

Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Kováč, J.jr., Urbancová, P., and Pudiš, D.: Twinned nanoparticle structures for surface enhanced Raman scattering, Applied Surface Sci 528 (2020) 146548.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Kováč, J. jr., and Kováč, J.: MOS2/GAP heterojunction – formation and properties. In Proc. 8th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2020. ISBN 978-80-554-1735-6. P. 21-24.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Novák, J., Kuzma, A., Goraus, M., Gaso, P., and Jandura, D.: Near and far field of LED with 1D fresnel structure. In Proc. 8th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2020. ISBN 978-80-554-1735-6. P. 135-138.

  • 2019

Novák, J., Eliáš, P., Hasenöhrl, S., and Laurenčíková, A., Urbancová, P., and Pudiš, D.: Nanocone structures with limited interspace grown by MOVPE, Lithuanian J. Phys. 59 (2019) 179-184.

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., and Novotný, I.: Raman enhancement of Ag nanoparticles. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 23-26.

  • 2018

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Dobročka, E., Kováč, J.jr., Kováč, J., Ďurišová, J., and Pudiš, D.: Nanorods and nanocones for advanced sensor applications, Applied Surface Sci 461 (2018) 61-65.

Lettrichová, I., Laurenčíková, A., Pudiš, D., Novák, J., Goraus, M., Kováč, J.jr., Gaso, P., and Nevrela, J.: 2D periodic structures patterned on 3D surfaces by interference lithography for SERS, Applied Surface Sci 461 (2018) 171-174.

Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., Szobolovszký, R., and Novák, J.: GaP nanocones covered with silver nanoparticles for surface-enhanced Raman spectroscopy, Applied Surface Sci 461 (2018) 149-153.

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J.jr., Szobolovszký, R., and Novák, J.: Ag decorated GaP nanocones for SERS. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 204-207.

Lettrichová, I., Pudiš, D., Gaso, P., Jandura, D., Kováč, J.jr., Laurenčíková, A., Novák, J., and Goraus, M.: Polymer-based 3D microcones for application in SERS, Proc. SPIE 10976 (2018) 109760V.

Lettrichová, I., Laurenčíková, A., Pudiš, D., Novák, J., Goraus, M., Kováč, J.jr., Gaso, P., and Nevrela, J.: 2D periodic structures patterned on GaP nanocones by interference lithography. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 41-44.

Huran, J., Balalykin, N.I., Nozdrin, M.A., Sasinková, V., Kleinová, A., Kobzev, A.P., Kováčová, E., Laurenčíková, A., and Arbet, J.: Electron emission from N-doped carbon-based very thin films prepared by reactive magnetron sputtering. In Proc. 6th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. P. 13-16. ISBN 978-80-554-1450-8.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Vávra, I., Kováč, J.jr., and Kováč, J.: Deposition and properties of sulphide compunds on Gallium Phosphide nanocones. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 37-40.

Lettrichová, I., Pudiš, D., Gaso, P., Novák, J., Laurenčíková, A., Kováč, J.jr., Jandura, D., and Goraus, M.: GaP nanocones for SERS detection in lab-on-a-chip. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 57-60.

Huran, J., Balalykin, N.I., Kováčová, E., Nozdrin, M.A., Sasinková, V., Kleinová, A., Kobzev, A.P., and Laurenčíková, A.: Photo-induced electron emission properties of N-doped carbon-based very thin films. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 65-68.

  • 2017

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Dobročka, E., Novák, J., : Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires. Applied Surface Sci 395 (2017) 162-165.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J., : Methanol sensor for integration with GaP nanowire photocathode. Proc. SPIE 10248, Nanotechnology VIII (2017) 102480E.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Novotný, I., Kováč, J., Valentin, M., Kováč, J., Ďurišová, J., Pudiš, D., : Optical and mechanical properties of a compact ZnO layer with embedded GaP nanowires. Applied Surface Sci 395 (2017) 180-184.

Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Würfl, H., Kuzmík, J., : Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs. Physica Status Solidi a 214 (2017) 1700407.

Laurenčíková, A., Dérer, J., Hasenöhrl, S., Eliáš, P., Novák, J., : Preparation of methanol concentration sensor with nanostructured surface In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 243-246.

Novák, J., Hasenöhrl, S., Eliáš, P., Laurenčíková, A., Kováč, J., Szobolovszký, R., Nevřela, J., : Preparation of nanocones for SERS applications In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 1-4.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Gašo, P., Šušlik, Ľ., Jandura, D., Novák, J., : Radiation pattern of LED with 1D fresnel structure in the surface In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 247-250.

Ďurišová, J., Pudiš, D., Laurenčíková, A., Novák, J., Šušlik, Ľ., : Reflectance suppression of ZnO coated GaP nanowires. Thin Solid Films 640 (2017) 88–92.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., Kováč, J., Valentin, M., Kováč, J., : Reinforcement role of GaP nanowires in a ZnO layer prepared by RF sputtering,. Vacuum 138 (2017) 218-223.

  • 2016

Laurenčíková, A., Lettrichová, I., Pudiš, D., Hasenöhrl, S., Šušlik, Ľ., Haščík, Š., Dérer, J., Novák, J., : Integration of fresnel structure on AlGaAs/GaAs led devices In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 179-182.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Gašo, P., Šušlik, Ľ., Jandura, D., Ďurišová, J., Novák, J., : LED with 1D and 2D Fresnel structure in the surface In: 19. Škola vák. techniky. Eds. M. Michalka, A. Vincze. Bratislava: SVS, 2016. P. 87-90. ISBN 978-80-971179-7-9.. (APVV 0395-12).

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., : Young modulus and microhardness of ZnO nanolayers prepared by RF sputtering In: 19. Škola vák. techniky. Eds. M. Michalka, A. Vincze. Bratislava: SVS, 2016. P. 34-38. ISBN 978-80-971179-7-9.

  • 2015

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Novák, J., : Covering of GaP NW arrays with ZnO layer prepared at different sputering conditions In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 71-74.

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Kováč, J., Kováč, J., Eliáš, P., Novák, J., : Formation of compact covering of vertically standing GaP nanowire arrays by Ga-doped ZnO layer. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 93.

Šušlik, Ľ., Laurenčíková, A., Durisova, J., Novák, J., Lettrichová, I., Pudiš, D., : GaP nanowires organized in 2D PhC prepared by interference lithography In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 231-234.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., Kováč, J., Valentin, M., Kováč, J., : Optical and mechanical properties of compact ZnO layer with embedded GaP nanowires. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 104.

Novák, J., Telek, P., Hasenöhrl, S., Laurenčíková, A., : Spin injection in AlGaAs/GaAs LED with an incorporated in MnAs layer In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 31-33.

  • 2014

Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J., Mikolášek, M., Vávra, I., Novák, J., : Analysis of the core–shell interface between zinc-blende GaP and wurtzite ZnO. Solid-State Electr. 100 (2014) 7-10.

Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Rosová, A., Novák, J., : Annealing of gold nanoparticles on GaP(111)B: initial stage of GaP nanowire growth. Phys. Status Solidi RRL 8 (2014) 321-324.

Novák, J., Šutta, P., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., : Columnar microstructure of the ZnO shell layer deposited on the GaP nanowires. Applied Surface Sci 312 (2014) 162-166.

Laurenčíková, A., Hasenöhrl, S., Dérer, J., Eliáš, P., Hronec, P., Kováč, J., Novák, J., : Fabrication of GaP nanowire arrays on top InGaP solar cells In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 259-262.

Pudiš, D., Škriniarová, J., Lettrichová, I., Laurenčíková, A., Benčurová, A., Kováč, J., Novák, J., : Near-field scanning optical microscopy and lithography for LED characterization and semiconductor patterning. Proc. SPIE 9441 (2014) 94410P.

Kováč, J., Flickyngerová, S., Weis, M., Novotný, I., Laurenčíková, A., Novák, J., : Properties of polymer- GaP/ZnO nanowire hybrid organic photovoltaic devices In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 95-98.

  • 2013

Novák, J., Laurenčíková, A., Vávra, I., Hasenöhrl, S., Reiffers, M., : Magnetic properties of InMnAs nanodots prepared by MOVPE. J. Magnetism Magnetic Mater. 327 (2013) 20-23.

Krmelová, V., Janek, L., Sroková, I., Sasinková, V., Laurenčíková, A., : Novel fillers for natural rubber blends: organically modified montmorillonite and starch Hutnické listy 66 (2013) 48-50.

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., Novák, J., :Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Sci 267 (2013) 60-64.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Hasenöhrl, S., Novák, J., Škriniarová, J., Kováč, J., : Predefined planar structures in semiconductor surfaces patterned by NSOM lithography Proc. SPIE 8816 (2013) 8816-45.

Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., Mikulics, M., Grünberg, P., : Properties of individual GaP/ZnO core-shell nanowires with radial PN junction, Proc. SPIE 8766 (2013) 8766-8.

Chromik, Š., Štrbik, V., Dobročka, E., Laurenčíková, A., Reiffers, M., Liday, J., Španková, M., : Significant increasing of onset temperature of FM transition in LSMO thin films,. Applied Surface Sci 269 (2013) 98-101.

Novák, J., Križanová, Z., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., Kováč, J., Šutta, P., Mikulics, M., : Structural and optical properties of individual GaP/ZnO core-shell nanowires. Vacuum 98 (2013) 106-110.

Truchly, M., Plecenik, T., Gregor, M., Satrapinskyy, L., Laurenčíková, A., Chromik, Š., Iida, K., Kurth, F., Plecenik, A., Kúš, P., : Surface conductivity properties of high-Tc superconductors. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 153-156.

Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Laurenčíková, A., Novák, J., : Zinc-doped gallium phosphide nanowires for photovoltaic structures,. Applied Surface Sci 269 (2013) 72-76.

  • 2012

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., Mikulics, M., : Electrical and photoluminescence properties of individual GaP nanowires doped by zinc Phys. Status Solidi a 209 (2012) 2505-2509.

Laurenčíková, A., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Novák, J., : GaP/ZnO nanowires with a radial pn heterojunction. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 115-118.

Sroková, I., Janíčková, J., Janek, L., Sasinková, V., Laurenčíková, A., : Hydrophobic CMS and its usage in the rubber blend Hutnické listy 65 (2012) 16-18.

Woch, W., Laurenčíková, A., Przewoznik, ., Zalecki, R., Kolodziejczyk, A., Sojková, M., Chromik, Š., : Magnetization, susceptibility and critical currents of (Tl2-xRex)Ba2CaCu2Oy thin films Acta Phys. Polonica A 121 (2012) 845-849.

Chromik, Š., Lalinský, T., Dobročka, E., Gierlowski, P., Štrbik, V., Laurenčíková, A., Španková, M., : Mutual compatibility of AlGaN HEMT and HTS (YBCO) technology. Supercond. Sci Technol. 25 (2012) 035008.

Novák, J., Mikulics, M., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., : Photoluminescence of single GaP/ZnO core-shell nanowires. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 127-130.

Truchly, M., Plecenik, T., Krško, O., Gregor, M., Satrapinskyy, L., Roch, T., Grančič, B., Mikula, M.,Laurenčíková, A., Chromik, Š., Kúš, P., Plecenik, A., : Studies of YBa2Cu3O6+x degradation and surface conductivity properties by scanning spreading resistance microscopy. Physica C 483 (2012) 61-66.

  • 2011

Štrbik, V., Beňačka, Š., Gaži, Š., Šmatko, V., Chromik, Š., Laurenčíková, A., Vávra, I., : Effect of gallium focused ion beam irradiation on properties of YBa2Cu3Ox/La0,67Sr0,33MnO3 heterostructures. J. Electr. Engn. 62 (2011) 109-113.

Štrbik, V., Beňačka, Š., Šmatko, V., Gaži, Š., Chromik, Š., Laurenčíková, A., Vávra, I., Vrabček, P., : SFS heterostructures prepared by focused-ion-beam technique. In: Measurement 2011. Eds. J. Maňka et al. Bratislava: IMS SAS, 2011. ISBN 978-80-969-672-4-7. P. 119-122.

  • 2010

Laurenčíková, A., Sojková, M., Chromik, Š., Štrbik, V., Kostič, I., : Tl-based patterned superconducting structures: fabrication and study. Supercond. Sci Technol. 23 (2010) 045007.

  • 2009

Laurenčíková, A., Sojková, M., Gaži, Š., Štrbik, V., Polák, M., Kostič, I., Chromik, Š., : The influence of the rhenium in the precursor film on the properties of the thin superconducting films based on thallium. Physica C 469 (2009) 308-311.

  • 2007

Laurenčíková, A., Sojková, M., Štrbik, V., Matkovičová, Z., Plesch, G., Kostič, I., : Influence of the reaction conditions on the formation of Tl(Re)-Ba-Ca-Cu-O superconducting thin films by thallination in open system Central European J. Phys. 5 (2007) 229-235.

Matkovičová, Z., Štrbik, V., Plesch, G., Sojková, M., Laurenčíková, A., : Tl-based superconducting films prepared by aerosol spray deposition and thallinated in an open system Central European J. Phys. 5 (2007) 398-404.