Mgr. Agáta LAURENČÍKOVÁ, PhD.

  • 2019

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., and Novotný, I.: Raman enhancement of Ag nanoparticles. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 23-26.

  • 2018

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Dobročka, E., Kováč, J.jr., Kováč, J., Ďurišová, J., and Pudiš, D.: Nanorods and nanocones for advanced sensor applications, Applied Surface Sci 461 (2018) 61-65.

Lettrichová, I., Laurenčíková, A., Pudiš, D., Novák, J., Goraus, M., Kováč, J.jr., Gaso, P., and Nevrela, J.: 2D periodic structures patterned on 3D surfaces by interference lithography for SERS, Applied Surface Sci 461 (2018) 171-174.

Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., Szobolovszký, R., and Novák, J.: GaP nanocones covered with silver nanoparticles for surface-enhanced Raman spectroscopy, Applied Surface Sci 461 (2018) 149-153.

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J.jr., Szobolovszký, R., and Novák, J.: Ag decorated GaP nanocones for SERS. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 204-207.

Lettrichová, I., Laurenčíková, A., Pudiš, D., Novák, J., Goraus, M., Kováč, J.jr., Gaso, P., and Nevrela, J.: 2D periodic structures patterned on GaP nanocones by interference lithography. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 41-44.

Huran, J., Balalykin, N.I., Nozdrin, M.A., Sasinková, V., Kleinová, A., Kobzev, A.P., Kováčová, E., Laurenčíková, A., and Arbet, J.: Electron emission from N-doped carbon-based very thin films prepared by reactive magnetron sputtering. In Proc. 6th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. P. 13-16. ISBN 978-80-554-1450-8.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Vávra, I., Kováč, J.jr., and Kováč, J.: Deposition and properties of sulphide compunds on Gallium Phosphide nanocones. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 37-40.

Lettrichová, I., Pudiš, D., Gaso, P., Novák, J., Laurenčíková, A., Kováč, J.jr., Jandura, D., and Goraus, M.: GaP nanocones for SERS detection in lab-on-a-chip. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 57-60.

Huran, J., Balalykin, N.I., Kováčová, E., Nozdrin, M.A., Sasinková, V., Kleinová, A., Kobzev, A.P., and Laurenčíková, A.: Photo-induced electron emission properties of N-doped carbon-based very thin films. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 65-68. (VEGA 2/0149/17, APVV 04443-12)

  • 2017
Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Dobročka, E., Novák, J., : Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires. Applied Surface Sci 395 (2017) 162-165. (APVV 0395-12). (APVV 14-0297). (VEGA 2/0098/13). (CENTE).

 

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J., : Methanol sensor for integration with GaP nanowire photocathode. Proc. SPIE 10248, Nanotechnology VIII (2017) 102480E.

 

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Novotný, I., Kováč, J., Valentin, M., Kováč, J., Ďurišová, J., Pudiš, D., : Optical and mechanical properties of a compact ZnO layer with embedded GaP nanowires. Applied Surface Sci 395 (2017) 180-184. (APVV 0395-12). (APVV 14-0297). (VEGA 2/0098/13).

 

Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Würfl, H., Kuzmík, J., : Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs. Physica Status Solidi a 214 (2017) 1700407. (HiPoSwitch). (APVV 15-0031). (SAFEMOST). (VEGA 2/0109/17).

 

Laurenčíková, A., Dérer, J., Hasenöhrl, S., Eliáš, P., Novák, J., : Preparation of methanol concentration sensor with nanostructured surface In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 243-246.. (APVV 14-0297). (VEGA 2/0104/17). (CENTE II).

 

Novák, J., Hasenöhrl, S., Eliáš, P., Laurenčíková, A., Kováč, J., Szobolovszký, R., Nevřela, J., : Preparation of nanocones for SERS applications In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 1-4. (APVV 14-0297). (APVV 0301-10). (VEGA 2/0104/17).

 

Lettrichová, I., Pudiš, D., Laurenčíková, A., Gašo, P., Šušlik, Ľ., Jandura, D., Novák, J., : Radiation pattern of LED with 1D fresnel structure in the surface In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 247-250..(APVV 0395-12).

 

Ďurišová, J., Pudiš, D., Laurenčíková, A., Novák, J., Šušlik, Ľ., : Reflectance suppression of ZnO coated GaP nanowires. Thin Solid Films 640 (2017) 88–92. (APVV 0395-12). (APVV 14-0297).

 

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., Kováč, J., Valentin, M., Kováč, J., : Reinforcement role of GaP nanowires in a ZnO layer prepared by RF sputtering,. Vacuum 138 (2017) 218-223. (APVV 0395-12). (APVV 14-0297). (VEGA 2/0098/13). (CENTE).

 

  • 2016
Laurenčíková, A., Lettrichová, I., Pudiš, D., Hasenöhrl, S., Šušlik, Ľ., Haščík, Š., Dérer, J., Novák, J., : Integration of fresnel structure on AlGaAs/GaAs led devices In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 179-182.

 

Lettrichová, I., Pudiš, D., Laurenčíková, A., Gašo, P., Šušlik, Ľ., Jandura, D., Ďurišová, J., Novák, J., : LED with 1D and 2D Fresnel structure in the surface In: 19. Škola vák. techniky. Eds. M. Michalka, A. Vincze. Bratislava: SVS, 2016. P. 87-90. ISBN 978-80-971179-7-9.. (APVV 0395-12).

 

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., : Young modulus and microhardness of ZnO nanolayers prepared by RF sputtering In: 19. Škola vák. techniky. Eds. M. Michalka, A. Vincze. Bratislava: SVS, 2016. P. 34-38. ISBN 978-80-971179-7-9.. (APVV 0395-12). (APVV 14-0297). (VEGA 2/0098/13).

 

  • 2015
Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Novák, J., : Covering of GaP NW arrays with ZnO layer prepared at different sputering conditions In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 71-74.. (APVV 0395-12). (VEGA 2/0098/13). (CENTE).

 

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Kováč, J., Kováč, J., Eliáš, P., Novák, J., : Formation of compact covering of vertically standing GaP nanowire arrays by Ga-doped ZnO layer. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 93.

 

Šušlik, Ľ., Laurenčíková, A., Durisova, J., Novák, J., Lettrichová, I., Pudiš, D., : GaP nanowires organized in 2D PhC prepared by interference lithography In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 231-234.. (APVV 0395-12).

 

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., Kováč, J., Valentin, M., Kováč, J., : Optical and mechanical properties of compact ZnO layer with embedded GaP nanowires. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 104.

 

Novák, J., Telek, P., Hasenöhrl, S., Laurenčíková, A., : Spin injection in AlGaAs/GaAs LED with an incorporated in MnAs layer In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 31-33. (APVV 0301-10). (APVV 0395-12). (VEGA 2/0098/13).

 

  • 2014
Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J., Mikolášek, M., Vávra, I., Novák, J., : Analysis of the core–shell interface between zinc-blende GaP and wurtzite ZnO. Solid-State Electr. 100 (2014) 7-10. (APVV 0301-10). (APVV 0395-12). (VEGA 2/0098/13).

 

Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Rosová, A., Novák, J., : Annealing of gold nanoparticles on GaP(111)B: initial stage of GaP nanowire growth. Phys. Status Solidi RRL 8 (2014) 321-324. (APVV 0301-10). (CENTE).

 

Novák, J., Šutta, P., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., : Columnar microstructure of the ZnO shell layer deposited on the GaP nanowires. Applied Surface Sci 312 (2014) 162-166. (APVV 0301-10). (APVV 0395-12). (VEGA 2/0098/13).

 

Laurenčíková, A., Hasenöhrl, S., Dérer, J., Eliáš, P., Hronec, P., Kováč, J., Novák, J., : Fabrication of GaP nanowire arrays on top InGaP solar cells In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 259-262. (APVV 0301-10). (APVV 0395-12). (VEGA 2/0098/13). (CENTE).

 

Pudiš, D., Škriniarová, J., Lettrichová, I., Laurenčíková, A., Benčurová, A., Kováč, J., Novák, J., : Near-field scanning optical microscopy and lithography for LED characterization and semiconductor patterning. Proc. SPIE 9441 (2014) 94410P.

 

Kováč, J., Flickyngerová, S., Weis, M., Novotný, I., Laurenčíková, A., Novák, J., : Properties of polymer- GaP/ZnO nanowire hybrid organic photovoltaic devices In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 95-98. (APVV 0301-10).

 

  • 2013
Novák, J., Laurenčíková, A., Vávra, I., Hasenöhrl, S., Reiffers, M., : Magnetic properties of InMnAs nanodots prepared by MOVPE. J. Magnetism Magnetic Mater. 327 (2013) 20-23. (VEGA 2/0081/09). (APVV 0301-10).

 

Krmelová, V., Janek, L., Sroková, I., Sasinková, V., Laurenčíková, A., : Novel fillers for natural rubber blends: organically modified montmorillonite and starch Hutnické listy 66 (2013) 48-50.

 

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., Novák, J., :Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Sci 267 (2013) 60-64. (ITMS 2624220028). (APVV 0301-10). (ITMS 26240220041).

 

Lettrichová, I., Pudiš, D., Laurenčíková, A., Hasenöhrl, S., Novák, J., Škriniarová, J., Kováč, J., : Predefined planar structures in semiconductor surfaces patterned by NSOM lithography Proc. SPIE 8816 (2013) 8816-45.

 

Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., Mikulics, M., Grünberg, P., : Properties of individual GaP/ZnO core-shell nanowires with radial PN junction, Proc. SPIE 8766 (2013) 8766-8.

 

Chromik, Š., Štrbik, V., Dobročka, E., Laurenčíková, A., Reiffers, M., Liday, J., Španková, M., : Significant increasing of onset temperature of FM transition in LSMO thin films,. Applied Surface Sci 269 (2013) 98-101.(VEGA 2/0144/10). (VEGA 2-0164-11). (APVV-0494-11).

 

Novák, J., Križanová, Z., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., Kováč, J., Šutta, P., Mikulics, M., : Structural and optical properties of individual GaP/ZnO core-shell nanowires. Vacuum 98 (2013) 106-110. (APVV 0301-10). (VEGA 2/0081/09).

 

Truchly, M., Plecenik, T., Gregor, M., Satrapinskyy, L., Laurenčíková, A., Chromik, Š., Iida, K., Kurth, F., Plecenik, A., Kúš, P., : Surface conductivity properties of high-Tc superconductors. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 153-156. (APVV-0494-11).

 

Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Laurenčíková, A., Novák, J., : Zinc-doped gallium phosphide nanowires for photovoltaic structures,. Applied Surface Sci 269 (2013) 72-76. (VEGA 2/0081/09). (APVV 0301-10). (APVV LPP-0162-09).

 

  • 2012
Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., Mikulics, M., : Electrical and photoluminescence properties of individual GaP nanowires doped by zinc Phys. Status Solidi a 209 (2012) 2505-2509. (APVV 0301-10). (APVV LPP-0162-09). (VEGA 2/0081/09).

 

Laurenčíková, A., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Novák, J., : GaP/ZnO nanowires with a radial pn heterojunction. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 115-118.

 

Sroková, I., Janíčková, J., Janek, L., Sasinková, V., Laurenčíková, A., : Hydrophobic CMS and its usage in the rubber blend Hutnické listy 65 (2012) 16-18.

 

Woch, W., Laurenčíková, A., Przewoznik, ., Zalecki, R., Kolodziejczyk, A., Sojková, M., Chromik, Š., : Magnetization, susceptibility and critical currents of (Tl2-xRex)Ba2CaCu2Oy thin films Acta Phys. Polonica A 121 (2012) 845-849. (VEGA 2/0139/08). (VEGA 2/7125/27). (APVV LPP-0078-07).

 

Chromik, Š., Lalinský, T., Dobročka, E., Gierlowski, P., Štrbik, V., Laurenčíková, A., Španková, M., : Mutual compatibility of AlGaN HEMT and HTS (YBCO) technology. Supercond. Sci Technol. 25 (2012) 035008. (VEGA 2-0164-11). (VEGA 2/0144/10). (VEGA-2-0163-09). (APVV 0450-10). (APVV 51-040605).

 

Novák, J., Mikulics, M., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., : Photoluminescence of single GaP/ZnO core-shell nanowires. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 127-130.

 

Truchly, M., Plecenik, T., Krško, O., Gregor, M., Satrapinskyy, L., Roch, T., Grančič, B., Mikula, M.,Laurenčíková, A., Chromik, Š., Kúš, P., Plecenik, A., : Studies of YBa2Cu3O6+x degradation and surface conductivity properties by scanning spreading resistance microscopy. Physica C 483 (2012) 61-66.

 

  • 2011
Štrbik, V., Beňačka, Š., Gaži, Š., Šmatko, V., Chromik, Š., Laurenčíková, A., Vávra, I., : Effect of gallium focused ion beam irradiation on properties of YBa2Cu3Ox/La0,67Sr0,33MnO3 heterostructures. J. Electr. Engn. 62 (2011) 109-113.

 

Štrbik, V., Beňačka, Š., Šmatko, V., Gaži, Š., Chromik, Š., Laurenčíková, A., Vávra, I., Vrabček, P., : SFS heterostructures prepared by focused-ion-beam technique. In: Measurement 2011. Eds. J. Maňka et al. Bratislava: IMS SAS, 2011. ISBN 978-80-969-672-4-7. P. 119-122.

 

  • 2010
Laurenčíková, A., Sojková, M., Chromik, Š., Štrbik, V., Kostič, I., : Tl-based patterned superconducting structures: fabrication and study. Supercond. Sci Technol. 23 (2010) 045007.

 

  • 2009
Laurenčíková, A., Sojková, M., Gaži, Š., Štrbik, V., Polák, M., Kostič, I., Chromik, Š., : The influence of the rhenium in the precursor film on the properties of the thin superconducting films based on thallium. Physica C 469 (2009) 308-311. (APVV 51-040605). (VEGA 2/5130/25).

 

  • 2007
Laurenčíková, A., Sojková, M., Štrbik, V., Matkovičová, Z., Plesch, G., Kostič, I., : Influence of the reaction conditions on the formation of Tl(Re)-Ba-Ca-Cu-O superconducting thin films by thallination in open system Central European J. Phys. 5 (2007) 229-235.

 

Matkovičová, Z., Štrbik, V., Plesch, G., Sojková, M., Laurenčíková, A., : Tl-based superconducting films prepared by aerosol spray deposition and thallinated in an open system Central European J. Phys. 5 (2007) 398-404.