Mgr. Mária SEKÁČOVÁ

2019

Zaťko, B., Hrubčín, L., Boháček, P., Osvald, J., Šagátová, A., Sekáčová, M., Kováčová, E., and Nečas, V.: Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer, AIP Conf. Proc. 2131 (2019) 020054.

2018

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., Boháček, P., and Sekáčová, M.: Comparison of semi-insulating GaAs and 4H-SiC-based semiconductor detector covered by LiF film for thermal neutron detection, Applied Surface Sci 461 (2018) 242-248.

Zaťko, B., Zápražný, Z., Jakůbek, J., Šagátová, A., Boháček, P., Sekáčová, M., Korytár, D., Nečas, V., Žemlička, J., Mora, Y., and Pichotka, M.: Imaging performance of Timepix detector based on semi-insulating GaAs, J. Instrument. 13 (2018) C01034.

Šagátová, A., Zaťko, B., Kubanda, D., Boháček, P., Sekáčová, M., and Nečas, V.: Optimization of X-ray imaging by Timepix based radiation camera with SI GaAs sensor, AIP Conf. Proc. 1996 (2018) 020039.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Boháček, P., Sekáčová, M., Zaťko, B., Gombia, E., Kováč, J., and Nečas, V.: Study of metal/semi-insulating GaAs/metal contacts: symmetrical geometry. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. ISBN 978-80-554-1450-8. P. 17-20.

Huran, J., Boháček, P., Sasinková, V., Kleinová, A., Kobzev, A.P., Kováčová, E., Sekáčová, M., and Arbet, J.: Amorphous silicon carbide films wit wide range of phosphorus concentration: Structural and electrical properties. In Proc. 6th Conf. on Advances in Electron. Photon. Technol. – ADEPT. Bratislava: FEI STU 2018. P. 216-219. ISBN 978-80-554-1450-8.

Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kováčová, E., and Nečas, V.: Neutron detection using epitaxial 4H-SiC detector structures. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 39-42.

Kubanda, D., Zaťko, B., Žemlička, J., Šagátová, A., Boháček, P., Sekáčová, M., Kováčová, E., and Nečas, V.: Performance of bulk semi-insulating GaAs-based sensors with different pixel sizes for Timepix radiation camera. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 121-124.

Šagátová, A., Zaťko, B., Kubanda, D., Boháček, P., Sekáčová, M., and Nečas, V.: Optimal irradiation geometry for Timepix imaging detector with GaAs sensor compared with Si based sensor. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 149-152.

  • 2017
Zaťko, B., Hrubčín, L., Sedlačková, K., Boháček, P., Šagátová, A., Sekáčová, M., Arbet, J., Skuratov, V., Nečas, V., : High energy ion detection using 4H-SiC semiconductor detector In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 154-157.

 

Huran, J., Boháček, P., Kleinová, A., Sasinková, V., Kobzev, A., Arbet, J., Kováčová, E., Sekáčová, M., : PECVD silicon carbide films for electromagnetic energy absorption in the 0.1-2.0THz frequency range In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 203-206.

 

Huran, J., Balalykin, N., Boháček, P., Nozdrin, M., Kováčová, E., Kobzev, A., Haščík, Š., Sekáčová, M., Arbet, J., Ryzá, J., : PECVD silicon carbide films on quartz glass as prospective transmission photocathodes In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 150-153.

 

Dubecký, F., Hubík, P., Kindl, D., Gombia, E., Boháček, P., Sekáčová, M., Nečas, V., : Study of Mg contact on semi-insulating GaAs In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 158-162.

 

  • 2016
Szundiová, B., Zaťko, B., Boháček, P., Sekáčová, M., Nečas, V., : Electrical and detection properties of bulk semi-insulating GaAs detectors. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 275-278.

 

Dubecký, F., Vanko, G., Kindl, D., Hubík, P., Gombia, E., Boháček, P., Sekáčová, M., Zaťko, B., : Investigation of metal contacts on semi-insulating GaAs: physics, technology and applications In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 219-222.

 

Zaťko, B., Hrubčín, L., Šagátová, A., Boháček, P., Dubecký, F., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., Skuratov, V., : Particle detectors based on 4H-SiC epitaxial layer and their properties In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 141-144.

 

Dubecký, F., Oswald, J., Kindl, D., Hubík, P., Dubecký, M., Gombia, E., Šagátová, A., Boháček, P.,Sekáčová, M., Nečas, V., : Photocurrent spectra of semi-insulating GaAs M-S-M diodes: role of the contacts. Solid-State Electr. 118 (2016) 30-35.

 

Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kohout, Z., Granja, C., Nečas, V., :Radiation detector based on 4H-SiC used for thermal neutron detection. J. Instrument. 11 (2016) C11022.

 

Huran, J., Boháček, P., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Hrubčín, L., Arbet, J.,Sekáčová, M., : Silicon carbide thin films deposited by PECVD technology for applications in photoelectrochemical water splitting devices In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 215-219.

 

Zaťko, B., Šagátová, A., Boháček, P., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., : The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs. J. Instrument. 11 (2016) C01076.

 

Zaťko, B., Šagátová, A., Boháček, P., Sekáčová, M., Arbet, J., Nečas, V., : The thermal neutron detection using 4H-SiC detectors with 6LiF conversion layer. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 37-41.

 

Dubecký, F., Hubík, P., Kindl, D., Gombia, E., Boháček, P., Sekáčová, M., Nečas, V., : Unexpected current lowering of Mg contact on SI-GaAs. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 188-192.

 

  • 2015
Huran, J., Mikolášek, M., Boháček, P., Kleinová, A., Sasinková, V., Kobzev, A., Sekáčová, M., Arbet, J., : HWCD technology of silicon carbide thin films: properties In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 104-107.

 

Boháček, P., Zaťko, B., Šagátová, A., Hybler, P., Sekáčová, M., : Influence of 5 MeV electron irradiation on galvanomagnetic parameters of semi-insulating GaAs In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 234-237.

 

Dubecký, F., Kindl, D., Hubík, P., Oswald, J., Mičušík, M., Gombia, E., Boháček, P., Sekáčová, M., Zaťko, B., Šagátová, A., : Peculiarities of metal contacts on semi-insulating GaAs: electrical, photoelectronic and XPS characterization In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 216-220..

 

Huran, J., Boháček, P., Kobzev, A., Kleinová, A., Sasinková, V., Sekáčová, M., Arbet, J., : Plasma-enhanced chemical vapour deposition of B-doped silicon carbide thin films for heterojunction application. In: 22nd Inter. Symp. on Plasma Chemistry. Antwerpy 2015. Proc. Extend. Abstracts P-III-6-22.

 

Sasinková, V., Huran, J., Kleinová, A., Boháček, P., Arbet, J., Sekáčová, M., : Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment,. Proc. SPIE 9563 (2015) 95630V.

 

Dubecký, F., Kindl, D., Hubík, P., Gombia, E., Boháček, P., Sekáčová, M., : Role of the metal contact in electrical transport through M/S-GaAs/M structures In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 112-115.

 

Dubecký, F., Kindl, D., Osvald, J., Hubík, P., Micusik, M., Boháček, P., Sekáčová, M., Gombia, E., Šagátová, A., : Study of novel metal contacts on semi-insulating GaAs: electrical, photoelectronic and XPS characterization. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 42-43.

 

Zaťko, B., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : The effect of high-energy electrons irradiation on the current-voltage characteristics of Schottky barriers detectors based on semi-insulating GaAs In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 154-157.

 

  • 2014
Zaťko, B., Dubecký, F., Sedlačková, K., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : Analysis of detection properties of particle detectors based on 4H-SiC high quality epitaxial layer In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 65-68.

 

Boháček, P., Zaťko, B., Šagátová, A., Hybler, P., Sekáčová, M., : Electrical properties of semi-insulating GaAs irradiated with 5 MeV electrons In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 45-48.

 

Dubecký, F., Osvald, J., Kindl, D., Hubík, P., Gombia, E., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., Mudroň, J., : Photocurrent spectroscopy of semi-insulating GaAs M-S-M diodes with a new contact metallization. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 214-218.

 

Huran, J., Kleinová, A., Sasinková, V., Kobzev, A., Boháček, P., Sekáčová, M., Arbet, J., : Plasma enhanced chemical vapor deposition of low-k a-SiC:H thin films:FTIR study of chemical bonding In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 168-171.

 

Huran, J., Boháček, P., Kulikov, S., Bulavin, M., Sasinková, V., Kleinová, A., Kobzev, A., Sekáčová, M., Arbet, J., : Radiation hardness investigation of PECVD silicon carbide layers for PV applications.. In: 40th IEEE Photovoltaic Specialist Conf. – PVSC. IEEE 2014. ISBN: 978-147994398-2. P. 1815-1820.

 

Boháček, P., Dubecký, F., Sekáčová, M., Zaťko, B., : Temperature dependences of current-voltage characteristics on metal/semi-insulating GaAs structures. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 145-148.

 

  • 2013
Dubecký, F., Kováč, J., Kováč, J., Zaťko, B., Osvald, J., Hubík, P., Kindl, D., Vanko, G., Gombia, E., Ferrari, C., Boháček, P., Šagátová, A., Nečas, V., Sekáčová, M., : 4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: design, technology and performance testing, Proc. SPIE 8777B (2013) 8777-56.

 

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Sasinková, V., Balalykin, N., Sekáčová, M., Arbet, J., : Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.

 

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Sasinková, V., Balalykin, N., Sekáčová, M., Arbet, J., : Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications.. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.

 

Zaťko, B., Dubecký, F., Sedlačková, K., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : Analysis of 4H-SiC Schottky diode as a detector of ionizing radiation. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 174-177.

 

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Borzakov, S., Hrubčín, L., Sekáčová, M., Balalykin, N., : Neutron-irradation effect on the electrical chracteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology. Phys. Status Solidi a 210 (2013) 2756-2761.

 

Huran, J., Kováč, J., Boháček, P., Kováč, J., Kleinová, A., Mikolášek, M., Sekáčová, M., : Spectral response study of Schottky photodetectors based on nanocrystalline silicon carbide thin films prepared by PECVD technology at different conditions. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 93-96.

 

Huran, J., Valovič, A., Boháček, P., Shvetsov, V., Kobzev, A., Borzakov, S., Kleinová, A., Sekáčová, M., Arbet, J., Sasinková, V., : The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition,. Applied Surface Sci 267 (2013) 88-91.

 

  • 2012
Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detector of fast neutrons based on silicon carbide epitaxial layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 151-154.

 

Huran, J., Kučera, M., Boháček, P., Kobzev, A., Kleinová, A., Sekáčová, M., Kováčová, E., : Electron cyclotron resonance plasma technology of silicon carbon nitride thin films. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 267-270.

 

Huran, J., Valovič, A., Kučera, M., Kleinová, A., Kováčová, E., Boháček, P., Sekáčová, M., : Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties. J. Electr. Engn. 65 (2012) 333-335.

 

Huran, J., Balalykin, N., Shirkov, G., Boháček, P., Kobzev, A., Valovič, A., Malinovsky, L., Sekáčová, M., :Characterization of nanocrystalline diamond/amorphous composite carbon films prepared by PECVD technology. Phys. Procedia 32 (2012) 875-879.

 

Dubecký, F., Hubík, P., Gombia, E., Kindl, D., Dubecký, M., Mudroň, J., Boháček, P., Sekáčová, M., : Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 143-146.

 

  • 2011
Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Sekáčová, M., Nečas, V., : Detection of fast neutrons using detectors based on semi-insulating GaAs. J. Instrument. 6 (2011) C12047.

 

Zaťko, B., Dubecký, F., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detection of fast neutrons using semi-insulating GaAs coated by high density polyethylene. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 244-247.

 

Boháček, P., Dubecký, F., Zaťko, B., Sekáčová, M., Huran, J., Nečas, V., Mudroň, J., : Technology and performance study of a two-line monolithic X- and \gamma -ray detection chip Based on Semi-Insulating GaAs. IEEE Trans. Nuclear Sci 58 (2011) 3354-3358.

 

  • 2010
Boháček, P., Dubecký, F., Zaťko, B., Sekáčová, M., Huran, J., Šalát, T., Nečas, V., Mudroň, J., : Performance study of 2×64 pixel two-line monolithic x-ray detection chip on semi-insulating GaAs. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 244-247.

 

  • 2008
Boháček, P., Dubecký, F., Hubík, P., Zaťko, B., Chromik, Š., Sekáčová, M., : New kind of quasi-ohmic metallization in semi-insulating GaAs: Role in electrical charge transport. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 32-35.

 

Boháček, P., Zaťko, B., Dubecký, F., Chromik, Š., Huran, J., Sekáčová, M., : Role of new ohmic electrode metallization in detection performance of bulk semi-insulating GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 591 (2008) 105-108.

 

  • 2007
Boháček, P., Dubecký, F., Sekáčová, M., : Charge carrier transport in semi-insulating GaAs M-S-M structures: role of electrode technology. In: APCOM 2007. Eds.: D. Pudiš et al. Žilina: ŽU, 2007. ISBN: 978-80-8070-709-5. P. 175-178.

 

Dubecký, F., Boháček, P., Sekáčová, M., Zaťko, B., Lalinský, T., Linhart, V., Šagátová-Perďochová, A., Mudroň, J., Pospíšil, S., : Role of electrode metallization in performance of semi-insulating GaAs radiation detectors. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 87-89.

 

Boháček, P., Dubecký, F., Sekáčová, M., : Simulation of the reverse I-V characteristics of the Schottky barrier radiation detector structures prepared on semi-insulating GaAs. Semicond. Sci Technol. 22 (2007) 763-768.

 

  • 2006
Boháček, P., Dubecký, F., Sekáčová, M., : Current-voltage characteristics of semi-insulating GaAs Schottky barrier structures: measurement and simulation. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 169-172.

 

Šagátová-Perďochová, A., Dubecký, F., Nečas, V., Haščík, Š., Sekáčová, M., Huran, J., : Investigation of etched trenches in technology of LEG semi-insulating GaAs monolithic linear detector array. Nuclear Physics B – Proc. Suppl. 150 (2006) 194-199.

 

Dubecký, F., Zaťko, B., Boháček, P., Sekáčová, M., Nečas, V., : Performance study of semi-insulating GaAs radiation detectors I: role of key physical parameters of base material. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 326-330.

 

Dubecký, F., Makovník, M., Pivarč, J., Boháček, P., Sekáčová, M., Zaťko, B., Linhart, V., Šagátová-Perďochová, A., Pospíšil, S., : Performance study of semi-insulating GaAs radiation detectors II: role of electrode metallisation. In: APCOM 2006. Eds. M. Weis, J. Vajda. Bratislava: FEI STU 2006. P. 331-334.

 

  • 2005
Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., Huran, J., : Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images. Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

 

Dubecký, F., Hulicius, E., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Sekáčová, M., Boháček, P., Pangrác, J., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with blocking electrode formed by P+ homo- and heterojunction. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 153-156.

 

Dubecký, F., Zaťko, B., Gombia, E., Sekáčová, M., Boháček, P., Huran, J., : Recent progress in development of monolithic strip line X-ray detectors based on semi-insulating InP. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 157-160.

 

  • 2004
Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Šagátová-Perďochová, A., Sekáčová, M., Boháček, P., Hudec, M., Huran, J., : Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 314-320.

 

Dubecký, F., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Šagátová-Perďochová, A., Boháček, P., : Digital X-ray scanner based on monolithic line of semi-insulating GaAs radiation detectors. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 21-24.

 

Šagátová-Perďochová, A., Nečas, V., Ly Anh, T., Dubecký, F., Boháček, P., Sekáčová, M., Pavlicová, V., :Influence of top contact topology on detection properties of semi-insulating GaAs detectors. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 103-110.

 

Dubecký, F., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Šagátová-Perďochová, A., Boháček, P., : Monolithic array of semi-insulating GaAs detectors: Technology, performance and application in digital x-ray scanner. In: SIMC-XIII-2004. Ed. Wang, Z. et al. Piscataway: IEEE, 2004. P. 255-258.

 

Zaťko, B., Dubecký, F., Boháček, P., Gombia, E., Frigeri, P., Mosca, R., Franchi, S., Huran, J., Nečas, V.,Sekáčová, M., Förster, A., Kordoš, P., : On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 111-120.

 

Dubecký, F., Ščepko, P., Nečas, V., Zaťko, B., Sekerka, V., Sekáčová, M., Hudec, M., Huran, J., : Quantum digital x-ray scanner based on SI GaAs detectors: overal description and first imaging results. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 46-51.

 

Dubecký, F., Boháček, P., Zaťko, B., Sekáčová, M., Huran, J., Šmatko, V., Fornari, R., Gombia, E., Mosca, R., Pelfer, P., : Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 181-191.

 

  • 2003
Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Boháček, P., Šagátová-Perďochová, A., Hudec, M., Sekáčová, M., Huran, J., : Modular X-ray scanner based on GaAs detectors: status of development. In: APCOM 2003. Eds.: P. Bury et al. Žilina: FEE ŽU, 2003. ISBN: 80-8070-088-5. P. 115-119.

 

  • 2002
Boháček, P., Korytár, D., Ferrari, C., Dubecký, F., Surma, B., Zaťko, B., Šmatko, V., Huran, J., Fornari, R.,Sekáčová, M., Strzelecka, S., : Correlation of crystal defects and galvanomagnetic parameters of semi-insulating InP with performance of radiation detectors fabricated from characterised materials. Materials Sci Engn. B 91-92 (2002) 516-520.

 

Dubecký, F., Zaťko, B., Nečas, V., Ščepko, P., Gajtanská, M., Sekáčová, M., Šagátová-Perďochová, A., Sekerka, V., Huran, J., Boháček, P., Hudec, M., : Development and performance of imaging radiation detector based on semi-insulating GaAs: Application in γ-ray computer tomograph for industrial purposes. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 258.

 

Morvic, M., Boháček, P., Betko, J., Dubecký, F., Huran, J., Sekáčová, M., : Electrical properties of semi-insulating GaAs irradiated with neutrons. Nuclear Instr. Methods in Phys. Res. B 197 (2002) 240-246.

 

Ly Anh, T., Šagátová-Perďochová, A., Nečas, V., Boháček, P., Sekáčová, M., : Gamma-radiation hardness of bulk semi-insulating GaAs. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 292.

 

Dubecký, F., Zaťko, B., Sekáčová, M., Ferrari, C., Boháček, P., Nečas, V., : On the role of quasi-ohmic back contact in electrical charge transport of diodes based on semi-insulating GaAs. In: APCOM 2002. Eds.: J.Mudroň et al. Liptovský Mikuláš: Military Academy, 2002. ISBN: 80-8040-186-1. P. 90-94.

 

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Fornari, R., Gombia, E., Boháček, P., Krempasky, M., Pelfer, P., : Recent improvements in detection performances of radiation detectors based on bulk semi-insulating InP. Nuclear Instrum. Methods in Physics Research A 487 (2002) 27-32.

 

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Huran, J., Boháček, P., Ferrari, C., Kordoš, P., Förster, A., : Role of minority carrier extraction in performance of radiation detectors based on semi-insulating GaAs. In: ASDAM ’02. Ed. J. Breza and D. Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 145.

 

Šagátová-Perďochová, A., Dubecký, F., Ly Anh, T., Nečas, V., Boháček, P., Sekáčová, M., : The role of semi-insulating GaAs detector topology in detection performance. In: SIMC-XII-2002. Eds.: J.Breza et al. Piscataway: IEEE 2002. P. 265.

 

  • 2001
Nečas, V., Ly Anh, T., Sekáčová, M., Darmo, J., Dubecký, F., Šagátová-Perďochová, A., : Investigation of performance of semi-insulating GaAs detectors irradiated by high γ doses. Nuclear Instr. Methods in Phys. A 458 (2001) 348-351.

 

Dubecký, F., Zaťko, B., Boháček, P., Nečas, V., Sekáčová, M., Krempasky, M., : On performance and radiation hardness of radiation detectors based on semi-insulating InP. In: APCOM 2001. Liptovský Mikuláš: Military Academy, 2001. P. 71-76.

 

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Nečas, V., Pelfer, P., Senderák, R., Somora, M., Haralabidis, N., Loukas, D., Misiakos, K., Hlaváč, S., Kolesár, F., Boháček, P., Ruček, M., : On technology and performance of SAMO:: X- and γ-ray 32-pixel line detector based on semi-insulating GaAs and InP. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 152-157.

 

Pelfer, P., Dubecký, F., Fornari, R., Pikna, M., Gombia, E., Darmo, J., Krempasky, M., Sekáčová, M., :Present status and perspectives of the radiation detectors based on InP materials. Nuclear Instr. Methods in Phys. A 458 (2001) 400-405.

 

Darmo, J., Dubecký, F., Zaťko, B., Boháček, P., Sekáčová, M., Kvitkovič, J., Nečas, V., Pelfer, P., : The semi-insulating GaAs-based particle detector at IEE SAS: first imaging results. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 418-421.

 

  • 2000
Zaťko, B., Dubecký, F., Darmo, J., Euthymiou, P., Nečas, V., Krempasky, M., Sekáčová, M., Korytár, D., Csabay, O., Harmatha, L., Pelfer, P., : Electrical and detection performance of radiation detector based on bulk semi-insulating InP: Role of detector volume. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 429-432.

 

Dubecký, F., Zaťko, B., Darmo, J., Sekáčová, M., Krempasky, M., Nečas, V., Hlaváč, S., Ruček, M., Senderák, R., Szentpali, B., : On spectrometric performance of GaAs based radiation detectors. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 475-478.

 

Dubecký, F., Huran, J., Darmo, J., Zaťko, B., Krempasky, M., Boháček, P., Sekáčová, M., Bešše, I., Nečas, V., Hotový, I., Fornari, R., Gombia, E., Pelfer, P., : Performance of radiation detectors based on semiinsulating GaAs and InP. In: Sensors Microsystems. Singapore: World Sci 2000. P. 437-441.

 

Dubecký, F., Zaťko, B., Darmo, J., Sekáčová, M., Nečas, V., Förster, A., Kordoš, P., : Radiation detector based on bulk semi-insulating GaAs: Role of detector geometry abnd electrode technology. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 187-190.

 

Zaťko, B., Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Nečas, V., Boháček, P., Ruček, M., : Role of electron technology in performance of radiation detectors based on bulk semi-insulating GaAs. In: APCOM 2000. Liptovský Mikuláš: Military Academy 2000. P. 133-136.

 

Pelfer, P., Dubecký, F., Fornari, R., Pikna, M., Gombia, E., Zaťko, B., Darmo, J., Krempasky, M., Sekáčová, M., : Semi-insulating InP detectors for solar neutrino experiment. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 99-104.

 

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Boháček, P., Bešše, I., Ruček, M., Nečas, V., Pelfer, P., Senderák, R., Pinčík, E., Somora, M., Kolesár, F., Hudek, P., Kostič, I., : Technology and performance of x-and γ-ray 32 pixel line detector based on semi-insulating GaAs, J. Electrical Engn. 51 (2000) 30-35.

 

Dubecký, F., Darmo, J., Zaťko, B., Fornari, R., Nečas, V., Krempasky, M., Pelfer, P., Sekáčová, M., Boháček, P., : X-ray and gamma-ray detectors based on bulk semi-insulating GaAs&InP: Present status and prospects. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 151-158.

 

  • 1999
Dubecký, F., Darmo, J., Zaťko, B., Krempasky, M., Hasenöhrl, S., Procházková, O., Bešše, I., Sekáčová, M., Boháček, P., Pelfer, P., Nečas, V., : Investigation of X-ray and γ-ray detectors based on GaAs and InP with electrodes grown by MOCVD. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: Inst. Phys. ASCR 1999. P. 263.

 

Dubecký, F., Darmo, J., Krempasky, M., Nečas, V., Pelfer, P., Boháček, P., Sekáčová, M., : Study of key physical parameters of bulk semi-insulating GaAs for radiation detector fabrication. In: SIMC-X. Eds.: Z.Liliental-Weber and C.Miner. Piscataway: IEEE 1999. P. 149-152.

 

Dubecký, F., Krempasky, M., Darmo, J., Nečas, V., Hudek, P., Somora, M., Sekáčová, M., Zaťko, B., Kolesár, F., Boháček, P., Ruček, M., Kostič, I., : Study of performance of the first 32 pixel line chip for x-and γ-ray detection based on bulk semi-insulating GaAs. In: APCOM ’99. Eds. P. Macko et al. Lipt. Mikuláš: Military Acad. 1999. ISBN: 80-8040-098-9. P. 58.

 

Dubecký, F., Krempasky, M., Darmo, J., Somora, M., Nečas, V., Hlaváč, S., Hudek, P., Sekáčová, M., Zaťko, B., Kolesár, F., Boháček, P., Ruček, M., Belov, M., : The first results on GaAs 32 pixel line chip for x- and ç-ray detection. In: Proc. 3rd Inter. Symp. Microelectr. Technolog. Microsyst. Košice: FEI-TU 1999. P. 127-131.

 

  • 1998
Dubecký, F., Fornari, R., Darmo, J., Pikna, M., Gombia, E., Krempasky, M., Sekáčová, M., Hudek, P., Ruček, M., : Electrical and detection properties of the particle detectors based on LEC semi-insulating InP Nuclear Instr. Methods in Phys. Research A 408 (1998) 491.

 

Pelfer, P., Dubecký, F., Fornari, R., Darmo, J., Pikna, M., Krempasky, M., Gombia, E., Sekáčová, M., Ruček, M., : On the electrical and detection performance of particle detectors based on bulk semi-insulating InP. In: ASDAM 98. Eds. J.Breza et al. Piscataway: IEEE 1998. ISBN 0-7803-4909-1. P. 335.

 

Dubecký, F., Darmo, J., Krempasky, M., Pikna, M., Šatka, A., Nečas, V., Pelfer, P., Boháček, P., Sekáčová, M., : Role of physical parameters of bulk semi-insulating GaAs in detection performance of particle detectors. In: ASDAM 98. Eds. J.Breza et al. Piscataway: IEEE 1998. ISBN 0-7803-4909-1. P. 339.

 

Pelfer, P., Dubecký, F., Fornari, R., Pikna, M., Krempasky, M., Gombia, E., Darmo, J., Mosca, R., Sekáčová, M., : Semi-insulating InP particle detectors for X- and gamma-ray detection, Mater. Res. Soc Symp. 487 (1998) 477.

 

  • 1997
Dubecký, F., Krempasky, M., Boháček, P., Sekáčová, M., Fornari, R., Gombia, E., Pikna, M., Pelfer, P., : Electrical and detection characteristics of improved particle detectors based on semi-insulating InP. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 269.

 

Dubecký, F., Krempasky, M., Pelfer, P., Darmo, J., Pikna, M., Šatka, A., Sekáčová, M., Ruček, M., : GaAs detectors for hard X-ray astronomy Nuclear Phys. (Proc. Suppl.) B 54 (1997) 368.

 

  • 1996
Pinčík, E., Kučera, M., Brunel, M., Jergel, M., Čičmanec, P., Krempasky, M., Sekáčová, M., Kákoš, J., : A comparison of the GaAs surface modifications after the interactions with proton high energy beam and hydrogen inductively coupled plasma. In: ASDAM 96. Ed. T.Lalinský et al. Bratislava: IEE SAS 1996. P. 97.

 

Dubecký, F., Krempasky, M., Darmo, J., Sekáčová, M., Pikna, M., Fornari, R., Gombia, E., Pelfer, P., Hudek, P., : Electrical and detection properties of particle detectors based on LEC semiinsulating InP. In: ASDAM 96. Ed. T.Lalinský et al. Bratislava: IEE SAS 1996. P. 157.

 

Boháček, P., Krempasky, M., Korytár, D., Sekáčová, M., Senderák, R., : Mapping of the recidual voltage of Hall devices fabriced by P+Si coinplantation on GaAs wafers Physica Status Solidi A 155 (1996) 381.

 

  • 1995
Krempasky, M., Sekáčová, M., Dubecký, F., Darmo, J., Senderák, R., Kostič, I., : The preparation of LEC SI GaAs radiation detectors. In: Proc. Inter. Workshop Solid State Phys. Radioact. Irrad. Eds. P.Šutta and J. Mudroň. Liptov. Mikuláš: Military Acad. 1995. P. 117.