RNDr. Dagmar GREGUŠOVÁ, DrSc.

  • 2019

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

Brytavskyi, I., Hušeková, K., Myndrul, V., Pavlenko, M., Coy, E., Zaleski, K., Gregušová, D., Yate, L., Smyntyna, V., and Iatsunskyi, I.: Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers, Applied Surface Sci 471 (2019) 686-693.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

Pohorelec, O., Ťapajna, M., Gregušová, D., Fröhlich, K., and Kuzmík, J.: Investigation of threshold voltage instabilities in MOS-gated InGaN/AlGaN/GaN HEMTs. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 123-126.

Ťapajna, M., Egyenes-Pörsök, F., Hasenöhrl, S., Blaho, M., Pohorelec, O., Vincze, A., Muška, M., Noga, P., and Gregušová, D.: Investigation of GaN P-N junction processed by Mg ion implantation. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 43-46.

  • 2018

Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, , Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Characterization of monolithic InAlN/GaN NAND logic cell supported by circuit and device simulations, IEEE Trans. Electron Devices 65 (2018) 2666-2669.

Blaho, M., Gregušová, D., Haščík, Š., Kuzmík, J., Chvála, A., Marek, J., and Šatka, A.: Technology and performance of E/D-mode InAlN/GaN HEMTs for mixed-signal electronics. In 2018 22nd Inter. Microwave Radar Conf. (MIKON). Poznan: Warsaw Univ. Technol. 2018, p. 440-441. ISBN 978-83-949421-1-3.

Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Vilhan, M., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Simulation analysis of InAlN/GaN monolithic NAND logic cell. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 167-171.

Ťapajna, M., Vincze, A., Noga, P., Dobrovodsky, J., Šagátová, A., Hasenöhrl, S., Gregušová, D., and Kuzmík, J.: Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 141-144. (VEGA 2/0012/18, APVV 14-0716, ITMS 26220220179)

  • 2017
Blaho, M., Gregušová, D., Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., Kuzmík, J., : Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs. Applied Phys. Lett. 111 (2017) 033506. (APVV 15-0673). (CENTE).

Graff, A., Simon-Najasek, M., Altmann, F., Kuzmík, J., Gregušová, D., Haščík, Š.,  Jung, J., Baur, T., Grunenputt, J., and Blanck, H.: High resolution physical analysis of ohmic contact formation at GaN-HEMT devices, Microelectron. Reliab. 76-77 (2017) 338.

Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A., : Current conduction mechanism and electrical break-down in InN grown on GaN. Applied Phys. Lett. 110 (2017) 232103. (APVV 15-0031). (CENTE II).

 

Brytavskyi, I., Gregušová, D., Ťapajna, M., Stoklas, R., Blaho, M., Seifertová, A., Hasenöhrl, S., Dobročka, E., Kuzmík, J., : Hafnium oxide as a promising material for gate isolation in GaN-based MOS HFETs In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 207-210.. (VEGA 2/0109/17). (VEGA 2/0104/17).

 

Chvála, A., Nagy, L., Marek, J., Priesol, J., Blaho, M., Kuzmík, J., Gregušová, D., Príbytný, P., Bernát, M., Donoval, D., Šatka, A., : Characterization of monolithic InAlN/GaN NAND logic cell supported by device simulation In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 40-43. (APVV 15-0673). (APVV 0367-11).

 

Stoklas, R., Gregušová, D., Blaho, M., Fröhlich, K., Novák, J., Matys, M., Yatabe, Z., Kordoš, P., Hashizume, T., : Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction,. Semicond. Sci Technol. 32 (2017) 045018. (VEGA 2/0105/13). (VEGA 2/0138/14). (APVV 14-0297). (CENTE).

 

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pecz, B., Brunner, F., Kuzmík, J., : Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties. Applied Surface Sci 426 (2017) 656-661. (CENTE II). (APVV 15-0031). (VEGA 2/0138/14).

 

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pecz, B., Kuzmík, J., : Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density. J. Vacuum Sci Technol. B 35 (2017) 01A107. (SAFEMOST). (VEGA 2/0138/14). (CENTE).

 

Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Micusik, M., Gregušová, D., : Optimization of UV-assisted wet oxidation of GaAs,. J. Vacuum Sci Technol. B 35 (2017) 01A116. (VEGA 2/0105/13). (APVV 15-0243). (CENTE II).

 

Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Würfl, H., Kuzmík, J., : Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs. Physica Status Solidi a 214 (2017) 1700407. (HiPoSwitch). (APVV 15-0031). (SAFEMOST). (VEGA 2/0109/17).

 

Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P., : Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144. (VEGA 2/0105/13). (CENTE). (APVV 14-0297).

 

Nagy, L., Chvála, A., Stopjaková, V., Blaho, M., Kuzmík, J., Gregušová, D., Priesol, J., Šatka, A., : Towards standard digital cells on InAlN/GaN heterostructure In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 255-258.. (APVV 15-0673).

 

  • 2016
Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., Kuzmík, J., : DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.(SAFEMOST). (APVV 15-0243). (APVV 15-0673).

 

Mikulics, M., Arango, Y., Winden, A., Adam, R., Hardtdegen, A., Grützmacher, D., Plinski, E., Gregušová, D., Novák, J., Kordoš, P., Moonshiram, A., Marso, M., Sofer, Z., Lüth, H., Hardtdegen, H., : Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes. Applied Phys. Lett. 108 (2016) 061107. (VEGA 2/0105/13). (VEGA 2/0098/13). (APVV 14-0297).

 

Ťapajna, M., Hušeková, K., Pohorelec, O., Válik, L., Haščík, Š., Gucmann, F., Fröhlich, K., Gregušová, D., Kuzmík, J., : Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown Al2O3 gate dielectric In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 207-211. (SAFEMOST). (APVV 15-0031). (VEGA 2/0138/14).

 

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Priesol, J., Kuzmík, J., : Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 177-180. (APVV 15-0673).

 

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Carlin, J., Grandjean, N., Konstantinidis, G., Kuzmík, J., : Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics. Semicond. Sci Technol. 31 (2016) 065011. (CENTE). (APVV 0367-11). (VEGA 2/0138/14).

 

Stoklas, R., Gregušová, D., Fröhlich, K., Kuzmík, J., : Temperature-dependent of sub-threshold slope of AlGaN/GaN MOSHFETs with HfO2 gate oxide prepared by ALD In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 189-192. (VEGA 2/0105/13). (VEGA 2/0138/14). (CENTE). (APVV 15-0673).

 

Florovič, M., Škriniarová, J., Gregušová, D., Kováč, J., Kordoš, P., : Trap analysis in GaN-based heterostructures using current transients measurements In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 185-188. (VEGA 2/0105/13).

 

Ťapajna, M., Válik, L., Gregušová, D., Fröhlich, K., Gucmann, F., Hashizume, T., Kuzmík, J., : Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 1-4.. (SAFEMOST). (APVV 15-0031). (VEGA 2/0138/14).

 

  • 2015
Gucmann, F., Kúdela, R., Dobročka, E., Mičušík, M., Rosová, A., Novák, J., Gregušová, D., : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide In: 18. Škola vákuovej techniky: Nanosvet s vákuom. Bratislava: SVS, 2015. ISBN 978-80-971179-6-2. S. 27-30.. (VEGA 2/0105/13). (CENTE). (VEGA 2/0098/13).

 

Gucmann, F., Kúdela, R., Kordoš, P., Dobročka, E., Gaži, Š., Dérer, J., Liday, J., Vogrinčič, P., Gregušová, D., : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap. J. Vacuum Sci Technol. B 33 (2015) 01A111. (VEGA 2/0105/13). (VEGA 2/0098/13). (CENTE).

 

Čičo, K., Jančovič, P., Dérer, J., Šmatko, V., Rosová, A., Blaho, M., Hudec, B., Gregušová, D., Fröhlich, K., :Resistive switching in nonplanar HfO2-based structures with variable series resistance. J. Vacuum Sci Technol. B 33 (2015) 01A108.. (APVV 0509-10). (VEGA 2/0138/14). (CENTE II).

 

Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J., Grandjean, N., Kuzmík, J., : Self-aligned normally-off metal-oxide-semiconductor n+++GaN/InAlN/GaN high-electron mobility transistors. Phys. Status Solidi A 112 (2015) 1086-1090. (MORGaN). (APVV 0367-11). (VEGA 2/0138/14). (CENTE).

 

Gregušová, D., Kúdela, R., Gucmann, F., Stoklas, R., Blaho, M., Ťapajna, M., Kordoš, P., Fröhlich, K., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 58.. (VEGA 2/0105/13). (APVV 14-0297). (CENTE).

 

Kúdela, R., Gregušová, D., Šoltýs, J., Kučera, M., Dobročka, E., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 87-88.. (VEGA 2/0105/13). (APVV 14-0297).

 

  • 2014
Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmík, J., : Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth. Applied Phys. Lett. 104 (2014) 013506. (HiPoSwitch). (APVV 0367-11). (VEGA 2/0105/13).

 

Kuzmík, J., Jurkovič, M., Gregušová, D., Ťapajna, M., Brunner, F., Cho, E., Meneghesso, G., Würfl, H., :Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown. J. Applied Phys. 115 (2014) 164504. (HiPoSwitch). (CENTE II). (APVV 0104-10).

 

Stoklas, R., Gregušová, D., Blaho, M., Čičo, K., Fröhlich, K., Novák, J., Kordoš, P., : Gate leakage reduction of AlGaN/GaN MOS-HFETs with HfO2 prepared by ALD In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 133-136.. (VEGA 2/0105/13). (VEGA 2/0138/14). (APVV 0301-10). (CENTE).

 

Ťapajna, M., Killat, N., Palankovski, V., Gregušová, D., Čičo, K., Carlin, J., Grandjean, N., Kuball, M., Kuzmík, J., : Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors,. IEEE Trans. Electron Dev. 61 (2014) 2793-2801. (KCMTE). (MORGaN). (APVV 0104-10).

 

Gucmann, F., Kúdela, R., Fröhlich, K., Liday, J., Vogrinčič, P., Gaži, Š., Stoklas, R., Kordoš, P., Novák, J.,Gregušová, D., : III-As high electron mobility transistors with recessed ex-situ gate oxide In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 5-8. (VEGA 2/0105/13). (VEGA 2/0098/13). (CENTE).

 

Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E., Hashizume, T., Kuzmík, J., : Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations. J. Applied Phys. 116 (2014) 104501.(HiPoSwitch). (CENTE). (APVV 0367-11). (VEGA 2/0138/14).

 

Mikulics, M., Hardtdegen, H., Adam, R., Grützmacher, D., Gregušová, D., Novák, J., Kordoš, P., Sofer, Z., Serafini, J., Zhang, J., Sobolewski, R., Marso, M., : Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures. Semicond. Sci Technol. 29 (2014) 045022.

 

Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., Kordoš, P., : InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator. Applied Phys. Lett. 105 (2014) 183504. (VEGA 2/0105/13). (VEGA 2/0138/14). (CENTE).

 

Blaho, M., Dérer, J., Liday, J., Vogrinčič, P., Kordoš, P., Novák, J., Gregušová, D., : Low temperature ohmic contacts for self/aligned GaN-based HEMTs In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 124-128. (VEGA 2/0105/13). (VEGA 2/0098/13). (CENTE).

 

Fox, A., Mikulics, M., Hardtdegen, H., Trellenkamp, S., Arango, Y., Grützmacher, D., Sofer, Z., Gregušová, D., Novák, J., Kordoš, P., Marso, M., : Novel double-level-gate technology In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 89-92.

 

Mikulics, M., Hardtdegen, H., Arango, Y., Adam, R., Fox, A., Grützmacher, D., Gregušová, D., Stanček, S., Novák, J., Kordoš, P., Sofer, Z., Juul, L., Marso, M., : Reduction of skin effect losses in double-level-T-gate structure. Applied Phys. Lett. 105 (2014) 232102.

 

Stoklas, R., Gregušová, D., Hušeková, K., Marek, J., Kordoš, P., : Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator. Semicond. Sci Technol. 29 (2014) 045003. (VEGA 2-0147-11). (VEGA 2/0105/13). (APVV LPP-0162-09). (APVV 0367-11). (ENIAC).

 

Ščepka, T., Šoltýs, J., Precner, M., Fedor, J., Tóbik, J., Gregušová, D., Gucmann, F., Kúdela, R., Cambel, V., : Vortex dynamics in ferromagnetic nanoelements observed by micro-hall probes. Acta Phys. Polonica A 126 (2014) 390-391. (APVV 0088-12). (Vega 2/0037/12). (CENTE).

 

  • 2013
Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E., Kuzmík, J., : Bulk and interface trapping in the gate dielectric of GaN based metal–oxide–semiconductor high-electron mobility transistors. Applied Phys. Lett. 102 (2013) 243509. (HiPoSwitch). (APVV 0367-11). (APVV 0104-10).

 

Kordoš, P., Stoklas, R., Gregušová, D., Hušeková, K., Carlin, J., Grandjean, N., : Defect states characterization of non-annealed and annealed Zr2/InAlN/GaN structures by capacitance measurements,. Applied Phys. Lett. 102 (2013) 063502. (VEGA 2-0147-11). (VEGA 2/0105/13). (APVV 0367-11).

 

Kordoš, P., Stoklas, R., Hušeková, K., Gregušová, D., : Characterization of GaN-based MOS structures by capacitance measurements. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 28-31. (VEGA 2-0147-11). (VEGA 2/0105/13). (ENIAC).

 

Blaho, M., Gregušová, D., Jurkovič, M., Haščík, Š., Fedor, J., Kordoš, P., Fröhlich, K., Brunner, F., Cho, E., Hilt, O., Würfl, H., Kuzmík, J., : Ni/Au-Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOSHEMTs. Microelectr. Engn. 112 (2013) 204-207. (HiPoSwitch). (APVV 0104-10). (APVV 0367-11).

 

Jurkovič, M., Gregušová, D., Palankovski, V., Haščík, Š., Blaho, M., Čičo, K., Fröhlich, K., Carlin, J., Grandjean, N., Kuzmík, J., : Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region,. IEEE Electron Dev. Lett. 34 (2013) 432-434. (MORGaN). (APVV 0104-10).

 

Gregušová, D., Hušeková, K., Stoklas, R., Blaho, M., Jurkovič, M., Carlin, J., Grandjean, N., and Kordoš, P.: Zr2/InAlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with InAlN barrier of different compositions, Japan. J. Applied Phys. 52 (2013) 08JN07.

 

  • 2012
Kordoš, P., Kúdela, R., Stoklas, R., Čičo, K., Mikulics, M., Gregušová, D., Novák, J., : Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition. Applied Phys. Lett. 100 (2012) 142113. (APVV LPP-0162-09).

 

Stoklas, R., Gregušová, D., Novák, J., Kordoš, P., Tajima, M., Hashizume, T., : Current instabilities and other reliability aspects in AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 36-40.

 

Ščepka, T., Gregušová, D., Gaži, Š., Haščík, Š., Fedor, J., Šoltýs, J., Kúdela, R., Cambel, V., : Detection elements for on-cantilever laboratory. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 91-94. (CENTE).

 

Kúdela, R., Gregušová, D., Stoklas, R., : Devices with Te-doped InGaP layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 111-114.

 

Ťapajna, M., Gregušová, D., Čičo, K., Fedor, J., Carlin, J., Grandjean, N., Killat, N., Kuball, M., Kuzmík, J., : Early stage degradation of InAlN/GaN HEMTs during electrical stress. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 7-10.

 

Kordoš, P., Fox, A., Kúdela, R., Mikulics, M., Stoklas, R., Gregušová, D., : GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD. Semicond. Sci Technol. 27 (2012) 115002. (VEGA 2/0081/09). (VEGA 2/0098/09). (APVV LPP-0162-09).

 

Jurkovič, M., Gregušová, D., Haščík, Š., Blaho, M., Molnár, M., Palankovski, V., Donoval, D., Carlin, J., Grandjean, N., Kuzmík, J., : GaN/InAlN/AlN/GaN normally-off HEMT with etched access region. In: WOCSDICE-EXMATEC 2012.Eds. Y. Cordier and J.-Y. Duboz. Island of Porquerolles: CRHEA & CNRS 2012.

 

Čičo, K., Gregušová, D., Kuzmík, J., Jurkovič, M., Alexewicz, A., di Forte Poisson, M., Pogany, D., Strasser, G., Delage, S., Fröhlich, K., : Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation. Solid-State Electr. 67 (2012) 74-78. (MORGaN).

 

Mikulics, M., Hardtdegen, H., Gregušová, D., Sofer, Z., Šimek, P., Trellenkamp, S., Grützmacher, D., Lüth, H., Kordoš, P., Marso, M., : Non-uniform distribution of induced strain in gate recessed AlGaN/GaN structure evaluated by micro PL measurements. Semicond. Sci Technol. 27 (2012) 105008.

 

Precner, M., Gregušová, D., Šoltýs, J., Fedor, J., Gucmann, F., Tóbik, J., Kúdela, R., Cambel, V., : Nucleation and annihilation of magnetic vortices in Pacman-like nanodots observed by micro-Hall probes. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 87-90.

 

Jurkovič, M., Gregušová, D., Haščík, Š., Blaho, M., Čičo, K., Palankovski, V., Carlin, J., Grandjean, N., Kuzmík, J., : Polarization engineered normally-off GaN/InAlN/AlN/GaN HEMT In: Inter. Workshop on Nitride Semicond. 2012 – IWN. Sapporo 2012.

 

Gregušová, D., Kúdela, R., Stoklas, R., Blaho, M., Gucmann, F., Fedor, J., Kordoš, P., : The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 107-110.

 

Fox, A., Mikulics, M., Winden, A., Hardtdegen, H., Gregušová, D., Adam, R., Sobolewski, R., Marso, M., Grützmacher, D., Kordoš, P., : Towards future III-nitride based THz OEICs in the UV range. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 191-194.

 

  • 2011
Čičo, K., Hušeková, K., Ťapajna, M., Gregušová, D., Stoklas, R., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., Fröhlich, K., : Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics. J. Vacuum Sci Technol. B 29 (2011) 01A808.

 

Mikulics, M., Kordoš, P., Gregušová, D., Adam, R., Kočan, M., Wu, S., Zhang, J., Sobolewski, R., Grützmacher, D., Marso, M., : Monolithic integration of ultrafast photodetector and MESFET in the GaN material system. IEEE Photonics Technol. Lett. 23 (2011) 1189-1191.

 

Kúdela, R., Gregušová, D., Ščepka, T., Eliáš, P., Gaži, Š., : MOVPE grown InGaP/(Al, Ga)As free standing structures. In: EW-MOVPE XIV. Ed. J. Prazmowska. Wroclaw: House of Wroclaw Univ. Technol. 2011. ISBN 978-83-7493-599-9. P. 57-61.

 

Stoklas, R., Gregušová, D., Gaži, Š., Novák, J., Kordoš, P., : Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering. J. Vacuum Sci Technol. B 29 (2011) 01A809.

 

Cambel, V., Gregušová, D., Eliáš, P., Fedor, J., Kostič, I., Maňka, J., Ballo, P., : Switching magnetization magnetic force microscopy – an alternative to conventional lift-mode MFM, J. Electr. Engn. 62 (2011) 37-43.

 

  • 2010
Martaus, J., Cambel, V., Gregušová, D., Kúdela, R., Fedor, J., : 50-nm local anodic oxidation technology of semiconductor heterostructures. J. Nanosci Nanotechnol. 10 (2010) 4448-4453.

 

Gregušová, D., Hori, Y., Mizue, C., Stoklas, R., Sugawara, K., Hashizume, T., Kordoš, P., : Density of trap states in Al2O3/AlGaN/GaN MOS structures with gate oxide prepared by atomic layer deposition. In: Inter. RCIQE/CREST Joint Workshop 2010. Hokkaido Univ. 2010. P. 34-35.

 

Gregušová, D., Kúdela, R., Eliáš, P., Šoltýs, J., Kostič, I., Cambel, V., : GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs. J. Micromech. Microeng. 20 (2010) 097001.

 

Mikulics, M., Stoklas, R., Dadgar, A., Gregušová, D., Novák, J., Grützmacher, D., Krost, A., Kordoš, P., :InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN. Applied Phys. Lett. 97 (2010) 173505.

 

Cambel, V., Eliáš, P., Gregušová, D., Martaus, J., Fedor, J., Karapetrov, G., Novosad, V., : Magnetic elements for switching magnetization magnetic force microscopy tips. J. Magnetism Magn. Mater. 322 (2010) 2715-2721.

 

Cambel, V., Eliáš, P., Gregušová, D., Fedor, J., Martaus, J., Karapetrov, G., Novosad, V., Kostič, I., : Novel magnetic tips developed for the switching magnetization magnetic force microscopy. J. Nanosci Nanotechnol. 10 (2010) 4477-4481.

 

Čičo, K., Gregušová, D., Gaži, Š., Šoltýs, J., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., Fröhlich, K., : Optimization of the ohmic contact processing in InAlN/GaN high electron mobility transistors for lower temprerature of annealing, Phys. Status Solidi c 7 (2010) 108-111.

 

Gregušová, D., Gaži, Š., Sofer, Z., Stoklas, R., Dobročka, E., Mikulics, M., Greguš, J., Novák, J., Kordoš, P., : Oxidized Al film as an insulation layer in AlGaN/GaN Metal–Oxide–Semiconductor heterostructure field effect transistors Japan. J. Applied Phys. 49 (2010) art. no. 046504. (VEGA 2/0098/09).

 

Stoklas, R., Gregušová, D., Blaho, M., Kordoš, P., Tajima, M., Hashizume, T., : Preparation and properties of AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 155-158.

 

Kordoš, P., Mikulics, M., Fox, A., Gregušová, D., Čičo, K., Carlin, J., Grandjean, N., Novák, J., Fröhlich, K., :RF performance of InAlN/GaN HFETs and MOSHFETs with up to 21. IEEE Electron Dev. Lett. 31 (2010) 180-182.

 

Gregušová, D., Stoklas, R., Mizue, C., Hori, Y., Novák, J., Hashizume, T., Kordoš, P., : Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition. J. Applied Phys. 107 (2010) 106104. (APVV LPP-0162-09).

 

Kordoš, P., Stoklas, R., Gregušová, D., Gaži, Š., Novák, J., : Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurement. Applied Phys. Lett. 96 (2010) 013505. (VEGA 2/0098/09).

 

Gregušová, D., Mizue, C., Hori, Y., Stoklas, R., Novák, J., Hashizume, T., Kordoš, P., : Trapping effects in Al2O3/AlGaN/GaN MOS structures with gate oxide prepared by different deposition techniques. . In: 10th Expert Evaluation & Control Compound Semicond Mater. & Technol. – EXMATEC 2010. Eds. D. Pavlidis et al. Darmstadt/Seeheim: TU Darmstadt 2010. ISBN: 978-3-00-030837-6. P. 139-140.

 

  • 2009
Kúdela, R., Gregušová, D., Stoklas, R., Šoltýs, J., Kučera, M., Dobročka, E., Kordoš, P., : HEMT transistors with aluminum oxide and InGaP layers. In: EW-MOVPE XIII. Ulm Univ. 2009. P. 225-228.

 

Kordoš, P., Stoklas, R., Gregušová, D., Novák, J., : Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis. Applied Phys. Lett. 94 (2009) 223512. (VEGA 2/0098/09).

 

Gregušová, D., Stoklas, R., Eickelkamp, M., Fox, A., Novák, J., Vescan, A., Grützmacher, D., Kordoš, P., :Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements. Semicond. Sci Technol. 24 (2009) 075014. (VEGA 2/0098/09).

 

Kordoš, P., Fox, A., Stoklas, R., Eickelkamp, M., Gregušová, D., Grützmacher, D., Vescan, A., : Improved high-frequency performance of Al2O3/AlGaN/GaN MISHFETs compared to AlGaN/GaN HFETs. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 25-28.

 

Gregušová, D., Martaus, J., Fedor, J., Kúdela, R., Kostič, I., Cambel, V., : On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography. Ultramicroscopy 109 (2009) 1080-1084.(APVV 51-045705). (VEGA 2/0098/09).

 

  • 2008
Stoklas, R., Gaži, Š., Gregušová, D., Novák, J., Kordoš, P., : Enhancement of effective carrier velocity in AlGaN/GaN MOSHFETs with Al2O3 gate oxide. Physica Status Solidi c 5 (2008) 1935-1937.

 

Donoval, D., Florovič, M., Gregušová, D., Kováč, J., Kordoš, P., : High-temperature performance of AlGaN/GaN HFETs and MOSHFETs. Microelectron. Reliab. 48 (2008) 1669.

 

Kordoš, P., Florovič, M., Stoklas, R., Gregušová, D., Donoval, D., : Characterization of Al2O3/AlGaN/GaN MOSHFETs AND AlGaN/GaN HFET by measurements at elevated temperatures. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 109-112.

 

Čičo, K., Gregušová, D., Kuzmík, J., di Forte Poisson, M., Lalinský, T., Pogany, D., Delage, S., Fröhlich, K., : InAlN/GaN MOSHEMT with Al2O3 insulating film. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 87-91.

 

Stoklas, R., Gregušová, D., Novák, J., Kordoš, P., : Influence of annealing on electrical properties of AlGaN/GaN HFETs and MOSHFETs using Al2O3. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 263-266.

 

Kordoš, P., Donoval, D., Florovič, M., Kováč, J., Gregušová, D., : Investigation of trap effects in AlGaN/GaN field-effect transistors by temperature dependent threshold voltage analysis. Applied Phys. Lett. 92 (2008) 152113. (VEGA 2/6099/26).

 

Stoklas, R., Gregušová, D., Novák, J., Vescan, A., Kordoš, P., : Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis. Applied Phys. Lett. 93 (2008) 124103.

 

Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices. Ultramicroscopy 108 (2008) 1021-1024.

 

Martaus, J., Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., : New approach to local anodic oxidation of semiconductor heterostructures. Ultramicroscopy 108 (2008) 1086-1089.

 

Florovič, M., Kordoš, P., Donoval, D., Gregušová, D., Kováč, J., : Performance of AlGaN/GaN heterostructure field – effect transistors at higher ambient temperatures. J. Electr. Engn. 59 (2008) 53-56.

 

Martaus, J., Cambel, V., Gregušová, D., Kúdela, R., : Sub-micron Hall probes prepared by tip-induced local anodic oxidation. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 195-198.

 

Kordoš, P., Gregušová, D., Stoklas, R., Gaži, Š., Novák, J., : Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness,. Solid-State Electr. 52 (2008) 973-979. (VEGA 2/6099/26).

 

  • 2007
Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : AFM nanooxidation process – technology perspective for mesoscopic structures. Surface Sci. 601 (2007) 2717-2723. (APVV 51-045705).

 

Martaus, J., Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., : AFM tip induced local anodic oxidation of InGaP/AlGaAs/GaAs heterostructures. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 299-302.

 

Gregušová, D., Stoklas, R., Čičo, K., Lalinský, T., Kordoš, P., : AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with 4nm thick Al2O3 gate oxide. Semicond. Sci Technol. 22 (2007) 947-951.

 

Bartolome, E., Pavau, A., Guitierrez, J., Granados, X., Pomar, A., Puig, T., Obradors, X., Cambel, V., Šoltýs, J., Gregušová, D., Chen, D., Sanchez, A., : Artificial magnetic granularity effects on patterned epitaxial YBa2Cu3O7-x thin films. Phys. Rev. B 76 (2007) 094508.

 

Gregušová, D., Stoklas, R., Čičo, K., Heidelberg, G., Marso, M., Novák, J., Kordoš, P., : Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide, Physica Status Solidi c 4 (2007) 2720-2723. (VEGA 2/6099/26).

 

Gregušová, D., Kučera, M., Hasenöhrl, S., Vávra, I., Štrichovanec, P., Martaus, J., Novák, J., : Impact of growth conditions on the spatial non-uniformities of composition in InGaP epitaxial layers. Physica Status Solidi c 4 (2007) 1419-1422.

 

Kordoš, P., Gregušová, D., Stoklas, R., Čičo, K., Novák, J., : Improved transport properties of Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect tranzistor. Applied Phys. Lett. 90 (2007) 123513.

 

Cambel, V., Karapetrov, G., Novosad, V., Bartolome, E., Gregušová, D., Fedor, J., Kúdela, R., Šoltýs, J., :Novel Hall sensors developed for magnetic field imaging systems. J. Magnetism Magn. Mater. 316 (2007) 232-235. (APVV 51-045705).

 

Čičo, K., Kuzmík, J., Gregušová, D., Stoklas, R., Lalinský, T., Georgakilas, A., Pogany, D., Fröhlich, K., :Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures. Microelectr. Reliability 47 (2007) 790-793.

 

Gregušová, D., Stoklas, R., Čičo, K., Lalinský, T., Fröhlich, K., Novák, J., Kordoš, P., : Preparation and properties of MOSHFETs based on MOVPE grown AlGaN/GaN heterostructure and MOCVD deposited Al2O3 gate oxide. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 85-88.

 

Šoltýs, J., Gregušová, D., Kúdela, R., Kostič, I., Cambel, V., : Study of epitaxially overgrown pyramids developed for active tips in scanning force microscopy. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 297-298.

 

Kordoš, P., Gregušová, D., Stoklas, R., Lalinský, T., Novák, J., : Transconductance enhancement in AlGaN/GaN MOSHEFTs with Al2O3 gate oxide. In: Proc. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits. Ed. G. Meneghesso. Venice: 2007. P. 381-384.

 

  • 2006
Martaus, J., Cambel, V., Kúdela, R., Gregušová, D., Šoltýs, J., : 2D electron transport through potential barrier prepared by LAO on shallow GaAs/AlxGa1-xAs/InGaP heterostructures. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 253-256.

 

Heidelberg, G., Bernát, J., Fox, A., Marso, M., Lüth, H., Gregušová, D., Kordoš, P., : Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHEFTs. Physica Status Solidi a 203 (2006) 1876-1881.

 

Eliáš, P., Gregušová, D., Martaus, J., Kostič, I., : Conformal AZ5214-E resist deposition on patterned (1 0 0) InP substrates. J. Micromech. Microengn. 16 (2006) 191–197.

 

Eliáš, P., Gregušová, D., Štrichovanec, P., Kostič, I., Novák, J., : Deposition of AZ5214-E layers on non-planar substrates with a “draping” technique. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 97-100.

 

Šoltýs, J., Gregušová, D., Kúdela, R., Šatka, A., Kostič, I., Cambel, V., : Formation of sharp-apex pyramids for active tips used in scanning probe microscopy. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 105-108.

 

Cambel, V., Fedor, J., Gregušová, D., Kúdela, R., : Hallovská magnetometria, Čs. čas. pro fyziku 56 (2006) 152-157.

 

Kordoš, P., Bernát, J., Gregušová, D., Marso, M., Lüth, H., : Impact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors. Semicond. Sci Technol. 21 (2006) 67-71.

 

Stoklas, R., Čičo, K., Gregušová, D., Novák, J., Kordoš, P., : Preparation and properties of AlGaN/GaN MOSHFETs with MOCVD Al2O3 as gate oxide. In: ASDAM 2006. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 249-252.

 

Čičo, K., Kuzmík, J.,%Gregušová, D., Donoval, D., : The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors. Semicond. Sci Technol. 21 (2006) 1592-1596.

 

  • 2005
Gregušová, D., Bernát, J., Držík, M., Marso, M., Uherek, F., Novák, J., Kordoš, P., : Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs. Phys. Status Solidi c 2 (2005) 2619-2622.

 

Cambel, V., Fedor, J., Gregušová, D., Kováč, P., Hušek, I., : Large-scale high-resolution scanning Hall probe microscope used for MgB2 filament characterization. Supercond. Sci Technol. 18 (2005) 417-421.

 

Lalinský, T., Vanko, G., Gregušová, D., Mozolová, Ž., Haščík, Š., Kordoš, P., : Schottky gate contacts for AlGaN/GaN based HEMTs. In: Proc. IMAPS CS Inter. Conf. EDS’05. Brno: VUT 2005. P. 242-247. ISBN 80-214-2990-9.

 

Bernát, J., Gregušová, D., Heidelberg, G., Fox, A., Marso, M., Lüth, H., Kordoš, P., : SiO2/AlGaN/GaN MOSHFET with 0.7 μm gate-length and fmax/fT of 40/24 GHz Electronics Lett. 41 (2005) 667-668.

 

  • 2004
Cambel, V., Gregušová, D., Fedor, J., Kúdela, R., Bending, S., : Scanning vector Hall probe microscopy. J. Magnetism Magnetic Mater. 272-276 (2004) 2141-2143.

 

Gregušová, D., Novák, J., Hardtdegen, H., Šoltýs, J., Kostič, I., Greguš, J., : Smooth GaN recess wet photoelectrochemical etching. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 199-202.

 

  • 2003
Gregušová, D., Cambel, V., Fedor, J., Kúdela, R., Šoltýs, J., Lalinský, T., Kostič, I., Bending, S., :Fabrication of a vector Hall sensor for magnetic microscopy. Applied Phys. Lett. 82 (2003) 3704-3706.

 

Cambel, V., Gregušová, D., Kúdela, R., : Formation of GaAs three-dimensional objects using AlAs “facet-forming” sacrificial layer and H3PO4, H2O2, H2O based solution. J. Applied Phys. 94 (2003) 4643-4648.

 

Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., Kostič, I., Attolini, G., Pelosi, C., : Investigation of the GaAs-pyramids overgrowth using MOCVD. J. Crystal Growth 248 (2003) 417-420.

 

Kúdela, R., Štrichovanec, P., Gregušová, D., Cambel, V., Šoltýs, J., Hasenöhrl, S., Novák, J., Kostič, I., Attolini, G., Pelosi, C., : MOVPE growth of AlGaAs/GaAs and InGaP/GaAs structures on patterned GaAs substrates. In: EW MOVPE X. Univ. Lecce 2003. P. 219.

 

Fedor, J., Cambel, V., Gregušová, D., Hanzelka, P., Dérer, J., Volko, J., : Scanning vector Hall probe microscope. Rev. Sci Instruments 74 (2003) 5105-5110.

 

  • 2002
Kicin, S., Cambel, V., Kuliffayová, M., Gregušová, D., Kováčová, E., Novák, J., Kostič, I., Förster, A., :Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. J. Applied Physics 91 (2002) 878-880.

 

Cambel, V., Eliáš, P., Gregušová, D., Hasenöhrl, S., Kúdela, R., Fedor, J., : Mikroskopická magnetometria. In: 12. Konf. slov. fyzikov. Eds. M.Reiffers, L.Just. Košice: Slov. fyzik. spol. 2002. P. 68.

 

Kúdela, R., Kučera, M., Gregušová, D., Cambel, V., Novák, J., : MOVPE growth of 1220 nm (InGa)(AsP) LED structures. In: ASDAM ’02. Ed. J.Breza and D.Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 183.

 

  • 1998
Cambel, V., Kúdela, R., Gregušová, D., Hasenöhrl, S., Eliáš, P., Novák, J., : Characterization of 2DEG Hall probes in high magnetic field at 4,2K. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 31.

 

Cambel, V., Gregušová, D., Eliáš, P., Hasenöhrl, S., Olejníková, B., Novák, J., Schaepers, T., Neurohr, K., Fox, A., : Characterization of InGaAs/InP microscopic Hall probe arrays with 2DEG active layer Mater. Sci Engn. B 51 (1998) 188.

 

Morvic, M., Betko, J., Hasenöhrl, S., Gregušová, D., Cambel, V., Eliáš, P., Novák, J., : On quantum Hall resistance and Shubnikov de Haas effect measurements on InP/InGaAs structures. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 285.

 

Eliáš, P., Gregušová, D., Cambel, V., Hasenöhrl, S., Kúdela, R., Hudek, P., Novák, J., : Preparation of microscopic Hall probes and arrays. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 273.

 

Ďurica, M., Cambel, V., Gregušová, D., Eliáš, P., Hasenöhrl, S., Kúdela, R., : Testing superconducting tapes by a 2DEG Hall probe array. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 277.

 

Škriniarová, J., Kováč, J., Breza, J., Gregušová, D., : Wet etching of InGaP and GaAs in HCl, H3PO4: H2O2 Sensors Materials 10 (1998) 213-218.

 

  • 1997
Škriniarová, J., Kováč, J., Breza, J., Gregušová, D., : Chemical etching of InGaP and GaAs in solutions of HCl, H3PO4 and H2O2, J. Electr. Engn. 48 (1997) 85.

 

Kováč, P., Cambel, V., Gregušová, D., Eliáš, P., Hušek, I., Kúdela, R., Hasenöhrl, S., Ďurica, M., : Testing of homogenity of Bi(2223)/Ag tapes by Hall probe array IoP Conf. Series No. 158 (1997) 1311.

 

  • 1996
Škriniarová, J., Kováč, J., Breza, J., Gregušová, D., : Chemical etching of InGaP and GaAs in HCl: H3PO4: H2O2. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 93.

 

  • 1995
Gregušová, D., Eliáš, P., Malacký, L., Kúdela, R., Škriniarová, J., : Wet chemical MESA etching of InGaP and GaAs with solutions based on HCl, CH3COOH and H2O2 Physica Status Solidi A 151 (1995) 113.

 

  • 1994
Betko, J., Kordoš, P., Kuklovský, S., Förster, A., Gregušová, D., Lüth, H., : Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature Materials Sci Engn. B 28 (1994) 147.

 

Lalinský, T., Gregušová, D., Mozolová, Ž., Breza, J., : High temperature stable Ir-Al/n-GaAs Schottky diodes Applied Phys. Lett. 64 (1994) 1818.

 

Gregušová, D., Lalinský, T., Mozolová, Ž., Machajdík, D., Pochaba, I., Vávra, I., Porges, M., : Characterization of WN x metallization prepared by ion implantation of nitrogen Thin Solid Films 249 (1994) 250.

 

  • 1993
Gregušová, D., Lalinský, T., Mozolová, Ž., Breza, J., Vogrinčič, P., : The effect of oxygen in WN films on thermal stability of WN /GaAs interface J. Mater. Sci 4 (1993) 197.

 

Gregušová, D., Lalinský, T., Machajdík, D., Pochaba, I., Porges, M., : The characterization of WNo films prepared by ion implantation of nitrogen. In: 7th Czecho-Slovak Conf. Thin Films. Ed.: V.Tvarožek. Lipt. Mikuláš: 1993. P. 93.

 

  • 1992
Lalinský, T., Kuzmík, J., Gregušová, D., Mozolová, Ž., Breza, J., Feciško, M., Seidel, P., : Properties of WN x/GaAs Schottky contacts prepared by ion implantation of nitrogen J. Materials Sci 3 (1992) 157.

 

  • 1989
Šafránková, J., Lalinský, T., Kuzmík, J., Mozolová, Ž., Porges, M., Gregušová, D., : Preparation and properties of GaAs double-Schottky-interdigitated photodetectors, Crystal Propert. Preparation 19-20 (1989) 315.

 

Lalinský, T., Kuzmík, J., Porges, M., Mozolová, Ž., Gregušová, D., : Technology and characterization of a submicrometer GaAs length GaAs MESFETs, Crystal Propert. Preparation 19-20 (1989) 259.

 

  • 1987
Lalinský, T., Gregušová, D., Moštenický, I., Měřínsky, K., : Technology and electrical characterization of GaAs MESFET structures. In: Gallium Arsenide. Proc. 2nd Conf. Phys. Technol. GaAs and other III-V Semicond. Ed. E.Lendway. Aedermannsdorf: Trans. Techn. Publ. 1987. P. 297.

 

  • 1986
Lalinský, T., Chromik, Š., Porges, M., Gregušová, D., Kuzmík, J., Breza, J., : Problémy technológie, elektrickej charakterizácie a spoľahlivosti ohmických kontaktov na GaAs, Elektrotechn. časopis 37 (1986) 354.