RNDr. Kristína HUŠEKOVÁ

  • 2019

Chymo, F., Fröhlich, K., Kundrata, I., Hušeková, K., Harmatha, L., Racko, J., Breza, J., and Mikolášek, M.: Characterization of MIS photoanode with a thin SiO2 layer for photoelectrochemical water splitting, AIP Conf. Proc. 2131 (2019) 020020.

Brytavskyi, I., Hušeková, K., Myndrul, V., Pavlenko, M., Coy, E., Zaleski, K., Gregušová, D., Yate, L., Smyntyna, V., and Iatsunskyi, I.: Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers, Applied Surface Sci 471 (2019) 686-693.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

Chymo, F., Fröhlich, K., Harmatha, L., Hušeková, K., Ondrejka, P., Kemeny, M.,  Hotový, I., and Mikolášek, M.: Development and characterization of photo-electrochemical MIS structures for hydrogen generation applications. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 103-106.

  • 2018

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dinesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A  215 (2018) 1800090.

Mikolášek, M., Fröhlich, K., Hušeková, K., Racko, J., Rehacek, V., Chymo, F., Ťapajna, M., and Harmatha, L.: Silicon based MIS photoanode for water oxidation: a comparison of RuO2 and Ni Schottky contacts, Applied Surface Sci 461 (2018) 48-53.

Mikolášek, M., Chymo, F., Fröhlich, K., Hušeková, K., Ondrejka, P., Racko, J., Hotovy, I., Breza, J., and Harmatha, L.: MIS structures with RuO2 Schottky contact for photoelectrochemical water splitting. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 163-166.

  • 2017
Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pecz, B., Brunner, F., Kuzmík, J., : Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties. Applied Surface Sci 426 (2017) 656-661. (CENTE II). (APVV 15-0031). (VEGA 2/0138/14).

 

  • 2016
Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., Kuzmík, J., : DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.(SAFEMOST). (APVV 15-0243). (APVV 15-0673).

 

Ťapajna, M., Hušeková, K., Pohorelec, O., Válik, L., Haščík, Š., Gucmann, F., Fröhlich, K., Gregušová, D., Kuzmík, J., : Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown Al2O3 gate dielectric In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 207-211. (SAFEMOST). (APVV 15-0031). (VEGA 2/0138/14).

 

  • 2014
Aarik, L., Arroval, T., Rammula, R., Mändar, H., Sammelselg, V., Hudec, B., Hušeková, K., Fröhlich, K., Aarik, J., : Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors,. Thin Solid Films 565 (2014) 19-24. (APVV 0133-07). (VEGA 2/0138/14).

 

Arroval, T., Aarik, L., Rammula, R., Mändar, H., Aarik, J., Hudec, B., Hušeková, K., Fröhlich, K., : Influence of growth temperature on the structure and electrical properties of high-permittivity TiO2 films in TiCl4-H2O and TiCl4-O3 atomic-layer-deposition processes,. Phys. Status Solidi a 211 (2014) 425-432. (VEGA 2-0147-11).

 

Murakami, K., Rommel, M., Hudec, B., Rosová, A., Hušeková, K., Dobročka, E., Rammula, R., Kasikov, A., Han, J., Lee, W., Song, S., Paskaleva, A., Bauer, A., Frey, L., Fröhlich, K., Aarik, J., Hwang, C., : Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes. ACS Applied Mater. Interfaces 6 (2014) 2486-2492. (VEGA 2-0147-11). (APVV 0509-10).

 

Stoklas, R., Gregušová, D., Hušeková, K., Marek, J., Kordoš, P., : Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator. Semicond. Sci Technol. 29 (2014) 045003. (VEGA 2-0147-11). (VEGA 2/0105/13). (APVV LPP-0162-09). (APVV 0367-11). (ENIAC).

 

  • 2013
Aarik, J., Arroval, T., Aarik, L., Rammula, R., Kasikov, A., Mändar, H., Hudec, B., Hušeková, K., Fröhlich, K., : Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current. J. Crystal Growth 382 (2013) 61-66. (VEGA 2-0147-11).

 

Kordoš, P., Stoklas, R., Gregušová, D., Hušeková, K., Carlin, J., Grandjean, N., : Defect states characterization of non-annealed and annealed Zr2/InAlN/GaN structures by capacitance measurements,. Applied Phys. Lett. 102 (2013) 063502. (VEGA 2-0147-11). (VEGA 2/0105/13). (APVV 0367-11).

 

Kordoš, P., Stoklas, R., Hušeková, K., Gregušová, D., : Characterization of GaN-based MOS structures by capacitance measurements. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 28-31. (VEGA 2-0147-11). (VEGA 2/0105/13). (ENIAC).

 

Hudec, B., Hušeková, K., Rosová, A., Šoltýs, J., Rammula, R., Kasikov, A., Uustare, T., Mičušík, M., Omastová, M., Aarik, J., Fröhlich, K., : Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor. J. Phys. D 46 (2013) 385304. (APVV 0133-07). (VEGA 2-0147-11). (KCMTE).

 

Gregušová, D., Hušeková, K., Stoklas, R., Blaho, M., Jurkovič, M., Carlin, J., Grandjean, N., Kordoš, P., :Zr2/InAlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with InAlN barrier of different compositions. Japan. J. Applied Phys. 52 (2013) 08JN07. (VEGA 2/0098/09). (VEGA 2/0081/09). (VEGA 2-0147-11). (APVV LPP-0162-09).

 

  • 2012
Aarik, J., Hudec, B., Hušeková, K., Rammula, R., Kasikov, A., Arroval, T., Uustare, T., Fröhlich, K., : Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes. Semicond. Sci Technol. 27 (2012) 074007. (APVV 0509-10). (VEGA 2-0147-11).

 

Fröhlich, K., Hudec, B., Ťapajna, M., Hušeková, K., Rosová, A., Eliáš, P., Aarik, J., Rammula, R., Kasikov, A., Arroval, T., Aarik, L., Murakami, K., Rommel, M., Bauer, A., : TiO2-based metal-insulator-metal structures for future DRAM storage capacitors ECS Transactions 50 (2012) 79-87.

 

  • 2011
Hudec, B., Hušeková, K., Dobročka, E., Aarik, J., Rammula, R., Kasikov, A., Tarre, A., Vincze, A., Fröhlich, K., : Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer. J. Vacuum Sci Technol. B 29 (2011) 01AC09. (APVV 0133-07). (VEGA 2/0031/08).

 

Čičo, K., Hušeková, K., Ťapajna, M., Gregušová, D., Stoklas, R., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., Fröhlich, K., : Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics. J. Vacuum Sci Technol. B 29 (2011) 01A808.

 

Hudec, B., Hušeková, K., Tarre, A., Han, J., Han, S., Rosová, A., Lee, W., Kasikov, A., Song, S., Aarik, J., Hwang, C., Fröhlich, K., : Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes. Microelectr. Engn. 88 (2011) 1514-1516. (CENTE II). (APVV 0133-07). (VEGA 2-0147-11).

 

Fröhlich, K., Hudec, B., Hušeková, K., Aarik, J., Tarre, A., Kasikov, A., Rammula, R., Vincze, A., : Low equivalent oxide thickness TiO2 based capacitors for DRAM applications, ECS Trans. 41 no. 2 (2011) 73.

 

Fröhlich, K., Hudec, B., Aarik, J., Tarre, A., Machajdík, D., Kasikov, A., Hušeková, K., Gaži, Š., : Post-deposition processing and oxygen content of TiO2-based capacitors. Microelectr. Engn. 88 (2011) 1525-1528. (APVV 0133-07).

 

Paskaleva, A., Ťapajna, M., Dobročka, E., Hušeková, K., Atanassova, E., Fröhlich, K., : Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks. Applied Surface Sci 257 (2011) 7876-7880.(APVV 0133-07). (VEGA 2/0031/08).

 

  • 2010
Kováč, P., Hušek, I., Kulich, M., Hušeková, K., Melišek, T., Dobročka, E., : Effects influencing the grain connectivity in ex-situ MgB2 wires. Physica C 470 (2010) 340-344. (VEGA 2/0037/09).

 

Ťapajna, M., Paskaleva, A., Atanassova, E., Dobročka, E., Hušeková, K., Fröhlich, K., : Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures Semicond. Sci Technol. 25 (2010) 075007.

 

Hušeková, K., Dobročka, E., Rosová, A., Šoltýs, J., Šatka, A., Fillot, F., Fröhlich, K., : Growth of RuO2 thin films by liquid injection atomic layer deposition. Thin Solid Films 518 (2010) 4701-4704.

 

Hudec, B., Hušeková, K., Dobročka, E., Lalinský, T., Aarik, J., Aidla, A., Fröhlich, K., : High-permittivity metal-insulator-metak capacitors with TiO2 rutile dielectric and RuO2 bottom electrode IOP Conf. Series: Mater. Sci Engn. 8 (2010) 012024.

 

Jurkovič, M., Hušeková, K., Čičo, K., Dobročka, E., Nemec, M., Fedor, J., Fröhlich, K., : Characterization of high permittivity GdScO3 films prepared by liquid injection MOCVD. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 247-250.

 

Hušeková, K., Hušek, I., Kováč, P., Kulich, M., Dobročka, E., Štrbik, V., : Properties of MgB2 superconductor chemically treated by accetic acid. Physica C 470 (2010) 331-335. (VEGA 2/0037/09).

 

Hudec, B., Hranai, M., Hušeková, K., Aarik, J., Tarre, A., Fröhlich, K., : Resistive switching in RuO2/TiO2/RuO2 MIM structures for non-volatile memory application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 255-258.

 

Hudec, B., Hušeková, K., Aarik, J., Tarre, A., Kasikov, A., Fröhlich, K., : RuO2/TiO2 based MIM capacitors for DRAM application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 341-344.

 

  • 2009
Fröhlich, K., Aarik, J., Ťapajna, M., Rosová, A., Aidla, A., Dobročka, E., Hušeková, K., : Epitaxial growth of high-κ TiO2 rutile films on RuO2 electrodes. J. Vacuum Sci Technol. B 27 (2009) 266-270. (APVV 0133-07). (VEGA 2/0031/08).

 

Čičo, K., Kuzmík, J., Liday, J., Hušeková, K., Pozzovivo, G., Carlin, J., Grandjean, N., Pogany, D., Vogrinčič, P., Fröhlich, K., : InAlN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases. J. Vacuum Sci Technol. B 27 (2009) 218-222. (VEGA 2/0031/08).

 

Hušeková, K., Jurkovič, M., Čičo, K., Machajdík, D., Dobročka, E., Lupták, R., Fröhlich, K., : Preparation of high permitivity GdScO3 films by liquid injection MOCVD, ECS Trans. 25 (2009) 1061.

 

Vincze, A., Lupták, R., Hušeková, K., Dobročka, E., Fröhlich, K., : Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD. Vacuum 84 (2009) 170. (VEGA 2/0031/08).

 

Fröhlich, K., Vincze, A., Dobročka, E., Hušeková, K., Čičo, K., Uherek, F., Lupták, R., Ťapajna, M., Machajdík, D., : Thermal stability of GdScO3 dielectric films grown on Si and InAlN/GaN substrates, Mater. Res. Soc. Symp. Proc. 1155 (2009) C09-03.

 

  • 2008
Ťapajna, M., Dobročka, E., Paskaleva, A., Hušeková, K., Atanassova, E., Fröhlich, K., : Electrical characterization of Ru- and RuO2/Ta2O5 gate stacks for nanoscale DRAM technology. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 267-270.

 

Fröhlich, K., Ťapajna, M., Rosová, A., Dobročka, E., Hušeková, K., Aarik, J., Aidla, A., : Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes. Electrochem. Solid-State Lett. 11 (2008) G19-G21. (VEGA 2/0031/08).

 

Vincze, A., Lupták, R., Hušeková, K., Fröhlich, K., : High κ semiconductor structures investigation using SIMS. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 246-249.

 

Hudec, B., Ťapajna, M., Hušeková, K., Aarik, J., Aidla, A., Fröhlich, K., : Low equivalent oxide thickness metal/insulator/metal structures for DRAM applications. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 123-126.

 

  • 2007
Ťapajna, M., Rosová, A., Hušeková, K., Roozeboom, F., Dobročka, E., Fröhlich, K., : Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1-xOy ultrathin gate dielectrics gated with Ru electrode. Microelectr. Engn. 84 (2007) 2366-2369.

 

Machajdík, D., Kobzev, A., Hušeková, K., Ťapajna, M., Fröhlich, K., Schram, T., : Thermal stability of advanced gate stacks consisting of a Ru electrode and Hf-based gate dielectrics for CMOS technology. Vacuum 81 (2007) 1379-1384.

 

  • 2006
Ťapajna, M., Hušeková, K., Machajdík, D., Kobzev, A., Schram, T., Lupták, R., Harmatha, L., Fröhlich, K., :Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology. Microelectr. Engn. 83 (2006) 2412.

 

Fröhlich, K., Espinos, J., Ťapajna, M., Hušeková, K., Lupták, R., : Energy band diagram of the Ru/Hf0.75Si0.25Oy/Si gate stack. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 29-32.

 

Fröhlich, K., Lupták, R., Ťapajna, M., Hušeková, K., Weber, U., Baumann, P., Lindner, J., : Fixed oxide charge in Ru-based chemical vapour deposited high-κ gate stacks In: Defects in high-κ gate dielectric stacks. Ed. E.P. Gusev. Springer 2006. P. 277-286.

 

Fröhlich, K., Lupták, R., Dobročka, E., Hušeková, K., Čičo, K., Rosová, A., Lukosius, M., Abrutis, A., Písečný, P., Espinos, J., : Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition. Materials Sci Semicond Process. 9 (2006) 1065-1072.

 

Ťapajna, M., Hušeková, K., Fröhlich, K., Dobročka, E., Roozeboom, F., : Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 21-24.

 

Ťapajna, M., Harmatha, L., Hušeková, K., : Measurement of generation parameters on Ru/HfO2/Si MOS capacitor. Solid-State Electr. 50 (2006) 177-180.

 

Rossel, C., Rosová, A., Hušeková, K., Machajdík, D., Fröhlich, K., : Phase stability of La0.5Sr0.5CoO3−y films upon annealing in hydrogen atmosphere. J. Applied Phys. 100 (2006) 044501.

 

Ťapajna, M., Hušeková, K., Espinos, J., Harmatha, L., Fröhlich, K., : Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high-κ dielectric. Materials Sci Semicond Process. 9 (2006) 969-974.

 

Fröhlich, K., Lupták, R., Hušeková, K., Čičo, K., Ťapajna, M., Weber, U., Baumann, P., Lindner, J., Espinos, J., : Properties of Ru/HfxSi1-xOy/Si metal oxide semiconductor gate stack structures grown by atomic vapor deposition. J. Electrochem. Soc. 153 (2006) F176-F179.

 

  • 2005
Ťapajna, M., Harmatha, L., Fröhlich, K., Hušeková, K., De Gendt, S., Schram, T., : Electrical characterisation of Ru/Hf-based high-k dielectric gate stacks for advanced CMOS technology. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 98-101.

 

Lupták, R., Fröhlich, K., Rosová, A., Hušeková, K., Ťapajna, M., Machajdík, D., Jergel, M., Espinos, J., Mansilla, C., : Growth of gadolinium oxide films for advanced MOS structure. Microelectr. Engn. 80 (2005) 154-157.

 

Čičo, K., Rosová, A., Fröhlich, K., Hušeková, K., Valent, P., Jergel, M., : Characterization of Al2O3 gate dielectric films grown on Si substrate. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 196-199.

 

Ťapajna, M., Harmatha, L., Hušeková, K., Fröhlich, K., : Measurement of generation parameters on Ru/HfO2/Si MOS capacitor, Measurement Sci Rev. 5 (2005) 42.

 

Fröhlich, K., Lupták, R., Hušeková, K., Čičo, K., Ťapajna, M., Weber, U., Baumann, P., Lindner, J., : Properties of Ru/HfxSi1-xOy/SI MOS gate stack structures grown by MOCVD. In: Proc. 207th Electrochemical Soc Meeting. Eds. E.P.Gusev et al. Pennington: The Electrochem. Soc, 2005. P. 339.

 

Španková, M., Vávra, I., Chromik, Š., Harasek, S., Lupták, R., Šoltýs, J., Hušeková, K., : Structural properties of Y2O3 thin films grown on Si(1 0 0) and Si(1 1 1) substrates,. Materials Sci Engn. B 116 (2005) 30-33.

 

Lupták, R., Fröhlich, K., Hušeková, K., Ťapajna, M., Machajdík, D., Jergel, M., Espinos, J., Mansilla, C., : Structure and electrical properties of the thin Gd2O3 films. In: APCOM 2005. Eds.: D. Pudiš et al. Žilina: ŽU, 2005. ISBN: 80-8070-411-2. P. 200-203.

 

  • 2004
Písečný, P., Harmatha, L., Espinos, J., Fröhlich, K., Hušeková, K., : Application of lanthanum oxide insulator layer for new high=k Mos technology. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 203.

 

Ťapajna, M., Písečný, P., Lupták, R., Hušeková, K., Fröhlich, K., Harmatha, L., Hooker, J., Roozeboom, F., Jergel, M., : Application of Ru-based gate materials for CMOS technology. Materials Sci Semicond. Process. 7 (2004) 271-276.

 

Fröhlich, K., Hušeková, K., Machajdík, D., Lupták, R., Ťapajna, M., Hooker, J., : Growth and properties of ruthenium based metal gates for pMOS devices. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 163-166.

 

Písečný, P., Hušeková, K., Fröhlich, K., Harmatha, L., Šoltýs, J., Machajdík, D., Espinos, J., Jergel, M., Jakabovič, J., : Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology. Materials Sci Semicond. Process. 7 (2004) 231-236.

 

Fröhlich, K., Hušeková, K., Öszi, Z., Hooker, J., Fanciulli, M., Wiemer, C., Dimoulas, A., Vellianitis, G., Roozeboom, F., : Metal oxide gate electrodes for advanced CMOS technology. Annalen der Physik 13 (2004) 31.

 

Fröhlich, K., Hušeková, K., Machajdík, D., Lupták, R., Ťapajna, M., Hooker, J., Roozeboom, F., Kobzev, A., Wiemer, C., Ferrari, C., Fanciulli, M., Rossel, C., Cabral, C., : Preparation of SrRuO3 films for advanced CMOS metal gates. Materials Sci Semicond. Process. 7 (2004) 265-269.

 

Fröhlich, K., Hušeková, K., Machajdík, D., Hooker, J., Perez, N., Fanciulli, M., Ferrari, C., Wiemer, C., Dimoulas, A., Roozeboom, F., : Ru and RuO2 gate electrodes for advanced CMOS technology. Materials Sci Engn. B 109 (2004) 117–121.

 

Ťapajna, M., Písečný, P., Harmatha, L., Fröhlich, K., Hušeková, K., Lupták, R., Hooker, J., Jakabovič, J., : Ruthenium-based gate materials for advanced MOS technology. In: APCOM 2004. Eds.: D. Barančok et al. Bratislava: FEI STU, 2004. ISBN: 80-227-2073-9. P. 270-273.

 

Ťapajna, M., Čičo, K., Lupták, R., Hušeková, K., Fröhlich, K., Harmatha, L., Hooker, J., Roozeboom, F., : Thermal stability of ruthenium MOS gate electrodes. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 167-170.

 

  • 1986
Toma, S., Hušeková, K., Elečko, P., Gajda, V., : Reactions of hydroxymethylferrocenes with C-acids catalyzed by Ca-2+-montmorillonite, Chem. Papers 40 (1986) 747-753. (Not IEE SAS).

 

Toma, S., Hušeková, K., Elečko, P., : Study of the synthesis of biaryls on homoionic forms of bentonite or montmorillonite, Chem. Papers 40 (1986) 755-761. (Not IEE SAS).