RNDr. Michal KUČERA, PhD.

  • 2019

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

  • 2018

Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

Brunner, R., Pincik, E., Kučera, M., Vojtek, P., and Zábudlá, Z.: Temperature dependence of photoluminescence of porous silicon, J. Energy Power Engn. 12 (2018) 340-345.

  • 2017
Pinčík, E., Brunner, R., Kobayashi, H., Mikula, M., Kučera, M., Švec, P., Greguš, J., Vojtek, P., Zábudlá, Z., Imamura, K., Zahoran, M., : About the optical properties of oxidized black silicon structures. Applied Surface Sci 395 (2017) 185-194.

 

Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A., : Current conduction mechanism and electrical break-down in InN grown on GaN. Applied Phys. Lett. 110 (2017) 232103. (APVV 15-0031). (CENTE II).

 

Brunner, R., Pinčík, E., Kučera, M., Vojtek, P., Zábudlá, Z., : The temperature dependence of photoluminescence peaks of porous silicon structures In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 207-212.. (VEGA 2/0152/16).

 

  • 2016
Brunner, R., Pinčík, E., Kučera, M., Mikula, M., : Photoluminescence investigation of thin film a-Si:H-based structures passivated in cyanide solution. J. Chinese Adv. Mater. Soc 4 (2016) 62-69.

 

Pinčík, E., Kobayashi, H., Brunner, R., Imamura, K., Mikula, M., Kučera, M., Vojtek, P., Zábudlá, Z., Švec, P., Greguš, J., Švec, P., : Physical properties and light-related applications of black silicon structures. J. Mater. Sci Engn. B 6 (2016) 144-152.

 

  • 2015
Kuzmík, J., Haščík, Š., Kučera, M., Kúdela, R., Dobročka, E., Adikimenakis, A., Mičušík, M., Gregor, M., Plecenik, A., Georgakilas, A., : Elimination of surface band bending on N-polar InN with thin GaN capping,. Applied Phys. Lett. 107 (2015) 191605. (APVV 0367-11). (VEGA 2/0138/14). (CENTE).

 

Huran, J., Boháček, P., Kučera, M., Kleinová, A., Sasinková, V., : Plasma deposition of amorphous silicon carbide thin films irradiated with neutrons,. Bull. American Phys. Soc 60 (2015) IW.00005. (APVV 0443-12).

 

Kúdela, R., Gregušová, D., Šoltýs, J., Kučera, M., Dobročka, E., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 87-88.. (VEGA 2/0105/13). (APVV 14-0297).

 

Pinčík, E., Kobayashi, H., Imamura, K., Brunner, R., Mikula, M., Kučera, M., Vojtek, P., Zábudlá, Z., Greguš, J., : The photoluminiscence of black silicon prepared using the SSCT method. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 111.

 

  • 2012
Huran, J., Kučera, M., Boháček, P., Kobzev, A., Kleinová, A., Sekáčová, M., Kováčová, E., : Electron cyclotron resonance plasma technology of silicon carbon nitride thin films. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 267-270.

 

Huran, J., Valovič, A., Kučera, M., Kleinová, A., Kováčová, E., Boháček, P., Sekáčová, M., : Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties. J. Electr. Engn. 65 (2012) 333-335. (CENTE II). (APVV 0713-07). (VEGA 2/0192/10).

 

Kučera, M., Kúdela, R., Novák, J., : Kučera, M., Kúdela R., and Novák, J.: Photoreflectance study of the role of a thin AlOx layer in a GaAs surface passivation and the Schottky barrier forming. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 231-234.

 

Pinčík, E., Kobayashi, H., Rusnák, J., Takahashi, M., Mikula, M., Kim, W., Kučera, M., Brunner, K., Jurečka, S., : Passivation of Si-based structures in HCN and KCN solutions. Applied Surface Sci 258 (2012) 8397-8405.

 

Brunner, K., Pinčík, E., Kobayashi, H., Kučera, M., Takahashi, M., : Photoluminescence spectra of non homogeneous a-Si:H layers. Metallurg. Anal. 32 (2012) 43.

 

Huran, J., Valovič, A., Kobzev, A., Balalykin, N., Kučera, M., Haščík, Š., Malinovsky, L., Kováčová, E., :Stuctural and physical characteristics of PECVD nanocrystalline silicon carbide thin films. Phys. Procedia 32 (2012) 303-307. (APVV 0713-07). (VEGA 2/0192/10).

 

  • 2011
Hasenöhrl, S., Novák, J., Vávra, I., Šoltýs, J., Kučera, M., Šatka, A., : Epitaxial growth of GaP/InxGa1-xP (xIn ≥ 0,27) virtual substrate for optoelectronic applications, J. Electr. Engn. 62 (2011) 93-98.

 

Šoltýs, J., Kúdela, R., Kučera, M., Eliáš, P., Novák, J., Cambel, V., Vávra, I., Kostič, I., : Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape. J. Crystal Growth 316 (2011) 67-70.(VEGA 2/0081/09).

 

Valovič, A., Huran, J., Kobzev, A., Balalykin, N., Kučera, M., Haščík, Š., : Nanocrystalline silicon carbide thin films prepared by plasma enhanced chemical vapor deposition Acta Technica 56 (2011) T291-T298. (APVV 0713-07).

 

Valovič, A., Huran, J., Kučera, M., Kobzev, A., Gaži, Š., : Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology. European Phys. J. Applied Phys. 56 (2011) 24013.

 

  • 2010
Boháček, P., Huran, J., Valovič, A., Kobzev, A., Shvetsov, V., Kučera, M., Malinovsky, L., : N-doped nanocrystalline silicon carbide films prepared by PECVD technology. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 81-84.

 

Pinčík, E., Kobayashi, H., Brunner, K., Takahashi, M., Kučera, M., Rusnák, J., Jergel, M., : On electrical, optical and structural properties of different Si-based structures prepared on a-Si:H/c-Si, porous silicon/c-Si and c-Si, Metallurgical Analysis 30 Suppl. 1 (2010) 80-85.

 

Brunner, K., Pinčík, E., Kobayashi, H., Kučera, M., Takahashi, M., Rusnák, J., : On photoluminescence properties of a-Si:H-based structures. Applied Surface Sci 256 (2010) 5596-5901.

 

Pinčík, E., Kobayashi, H., Rusnák, J., Kim, W., Brunner, K., Malinovsky, L., Matsumoto, T., Imamura, K., Jergel, M., Takahashi, M., Higashi, Y., Kučera, M., Mikula, M., : On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process. Applied Surface Sci 256 (2010) 5757-5764.

 

Brunner, K., Pinčík, E., Kobayashi, H., Kučera, M., Takahashi, M., : Photoluminescence spectra of non-homogeneous a-Si: H layers, Metallurgical Analysis 30 Suppl. 1 (2010) 950-954.

 

  • 2009
Kúdela, R., Kučera, M., Dobročka, E., Šoltýs, J., : AlGaAs/InGaP interfaces in structures prepared by MOVPE. J. Crystal Growth 311 (2009) 3123-3129. (APVV 51-045705).

 

Kúdela, R., Gregušová, D., Stoklas, R., Šoltýs, J., Kučera, M., Dobročka, E., Kordoš, P., : HEMT transistors with aluminum oxide and InGaP layers. In: EW-MOVPE XIII. Ulm Univ. 2009. P. 225-228.

 

Kučera, M., Novák, J., : Radiative-recombination transitions in sulphur-doped GaSb. J. Luminiscence 129 (2009) 238-242.

 

  • 2008
Pinčík, E., Kobayashi, H., Brunner, K., Takahashi, M., Kučera, M., Rusnák, J., Jergel, M., : Electrical, optical and structural properties of different si-based structures prepared on a-Si:H/c-Si, porous Silicon/c-Si, and c-Si Metallurg. Analysis 28 Suppl. 2 (2008) 1229-1237.

 

Hasenöhrl, S., Kučera, M., Morvic, M., Novák, J., : OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 111-114.

 

Brunner, K., Kobayashi, H., Kučera, M., Takahashi, M., Jergel, M., Pinčík, E., : On the relation between structural and photoluminescence properties of passivated a-Si:H / glass samples Metallurg. Analysis 28 Suppl. 2 (2008) 1248-1253.

 

Pinčík, E., Brunner, K., Kobayashi, H., Takahashi, M., Kučera, M., : Photoluminescence of very thin oxide/a-Si:H structures passivated in HCN solutions. Applied Surface Sci 254 (2008) 3710-3714.

 

  • 2007
Gregušová, D., Kučera, M., Hasenöhrl, S., Vávra, I., Štrichovanec, P., Martaus, J., Novák, J., : Impact of growth conditions on the spatial non-uniformities of composition in InGaP epitaxial layers. Physica Status Solidi c 4 (2007) 1419-1422.

 

Novák, J., Hasenöhrl, S., Vávra, I., Kučera, M., : Influence of surface strain on the MOVPE growth on InGaP epitaxial layers. Applied Phys. 87 (2007) 511-516.

 

Hasenöhrl, S., Kučera, M., Morvic, M., Novák, J., : Manganese incorporation during the OMVPE growth of GaAs. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 117-120.

 

Kúdela, R., Martaus, J., Cambel, V., Kučera, M., Dobročka, E., : Novel MOVPE grown 2DEG structures for local anodic oxidation. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 49-52.

 

Pinčík, E., Kobayashi, H., Hajossy, R., Glesková, H., Takahashi, M., Jergel, M., Brunner, K., Ortega, L.,Kučera, M., Kráľ, M., Rusnák, J., : On interface properties of ultra-thin and very-thin oxide/a-Si:H stuctures prepared by oxygen based plasmas and chemical oxidation. Applied Surface Sci 253 (2007) 6697-6715.

 

Novák, J., Hasenöhrl, S., Kučera, M., Vávra, I., Štrichovanec, P., Kováč, J., Vincze, A., : Photoluminiscence and TEM characterization of (AlyGa1-y)1-x InxP layers grown on graded buffers. Physica Status Solidi c 4 (2007) 1503-1507.

 

Novák, J., Hasenöhrl, S., Vávra, I., Sedlačková, K., Kučera, M., Radnóczi, G., : Role of the V-III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE. J. Crystal Growth 298 (2007) 76-80.

 

  • 2006
Kučera, M., Novák, J., : Optical characterization of gallium antimonide highly doped with manganese. J. Phys. Chem. Solids. 67 (2006) 1724-1730.

 

Novák, J., Hasenöhrl, S., Vávra, I., Kučera, M., : Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates. Applied Surface Sci 252 (2006) 4178-4184.

 

Novák, J., Štrichovanec, P., Vávra, I., Kúdela, R., Kučera, M., : Study of the optical and structural properties of multi quantum well structures grown on high-index surfaces. Microelectron. J. 37 (2006) 1515-1518.

 

  • 2005
Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., : Growth and characterisation of InxGa1-xP layers with composition close to crossover from direct to indirect band gap. J. Crystal Growth 275 (2005) e1281-e1286.

 

Štrichovanec, P., Novák, J., Vávra, I., Kúdela, R., Kučera, M., Šoltýs, J., : QWIP structures prepared on wet-etched non-planar GaAs. Phys. Status Solidi c 2 (2005) 1384-1388.

 

  • 2004
Novák, J., Hasenöhrl, S., Kučera, M., Šoltýs, J., : Nano-patterning surfaces by the self-organized growth of ordered and strained epitaxial layers. Superlatt. Microstruct. 36 (2004) 123-131.

 

Pinčík, E., Kobayashi, H., Takahashi, M., Fujiwara, N., Brunner, K., Glesková, H., Jergel, M., Müllerová, J.,Kučera, M., Falcony, C., Ortega, L., Rusnák, J., Mikula, M., Zahoran, M., Juráni, R., Kráľ, M., :Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells. Applied Surface Sci 235 (2004) 351-363.

 

  • 2003
Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Influence of ordered and random parts on properties of InGaP alloy grown by MOVPE. In: EW MOVPE X. Univ. Lecce 2003. P. 161.

 

Pinčík, E., Jergel, M., Falcony, C., Ortega, L., Ivančo, J., Brunner, K., Kučera, M., : Low-energy particle treatment of GaAs surface. Thin Solid Films 433 (2003) 108-113.

 

Pinčík, E., Kobayashi, H., Glesková, H., Kučera, M., Ortega, L., Jergel, M., Falcony, C., Brunner, K., Shimizu, T., Nádaždy, V., Zeman, M., Mikula, M., Kumeda, M., van Swaaijand, R., : Photoluminescence properties of a-Si:H based thin films and corresponding solar cells. Thin Solid Films 433 (2003) 344-351.

 

  • 2002
Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Effect of strain and ordering on the band-gap energy of InGaP. Materials Sci Engn. B 88 (2002) 139-142.

 

Kúdela, R., Kučera, M., Gregušová, D., Cambel, V., Novák, J., : MOVPE growth of 1220 nm (InGa)(AsP) LED structures. In: ASDAM ’02. Ed. J.Breza and D.Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 183.

 

Kučera, M., Novák, J., : Photoluminescence characterisation of Bismuth doped GaSb. In: ASDAM ’02. Ed. J.Breza and D.Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 149.

 

Pinčík, E., Glesková, H., Müllerová, J., Nádaždy, V., Mraz, S., Ortega, L., Jergel, M., Falcony, C., Brunner, K., Gmucová, K., Zeman, M., van Swaaijand, R., Kučera, M., Juráni, R., Zahoran, M., : Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles. Vacuum 67 (2002) 131-141.

 

Kúdela, R., Kučera, M., Novák, J., Ferrari, C., Pelosi, C., : Study of narrow InGaP/(In)GaAs quantum wells. J. Crystal Growth 242 (2002) 132-140.

 

  • 2001
Kicin, S., Novák, J., Hasenöhrl, S., Kučera, M., Meertens, D., : Photoluminescence characterization of InGaP/GaAs/InGaP quantum wires. Materials Sci & Engn. B 80 (2001) 184-187.

 

  • 2000
Kúdela, R., Morvic, M., Kučera, M., Kicin, S., Novák, J., : Electrical properties of 2DEG in the GaAs/InGaP based structures. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 223-226.

 

Kúdela, R., Kučera, M., Olejníková, B., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in InGaP/GaAs/InGaP quantum wells. J. Crystal Growth 212 (2000) 21-28.

 

Pinčík, E., Jergel, M., Kučera, M., van Swaaijand, R., Ivančo, J., Senderák, R., Zeman, M., Müllerová, J., Brunel, M., : Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces. Applied Surface Sci 166 (2000) 72-76.

 

Novák, J., Kicin, S., Hasenöhrl, S., Vávra, I., Kučera, M., Hudek, P., : InGaP/GaAs/InGaP quantum wires grown on pre-patterned substrates by MOVPE. Microelectr. Engn. 51-52 (2000) 11-17.

 

Pinčík, E., Jergel, M., Gmucová, K., Glesková, H., Kučera, M., Müllerová, J., Brunel, M., Mikula, M., : Low-energy argon ion beam treatment of a-Si:H/Si structure. Applied Surface Sci 166 (2000) 61-66.

 

  • 1999
Novák, J., Hasenöhrl, S., Cambel, V., Kučera, M., Wehmann, H., Wuellner, D., : Electrical and morphological properties of InGaP Mater. Sci Engn. B 66 (1999) 102-105.

 

Kúdela, R., Kučera, M., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in MOVPE grown InGaP/GaAs structures. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: IP ASCR 1999. P. 131-133.

 

Hasenöhrl, S., Novák, J., Kučera, M., Kúdela, R., : Influence of growth conditions on resistivity of ordered InxGa1-xP grown by LP-MOCVD. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: Inst. Phys. ASCR 1999. P. 127-130.

 

Kicin, S., Hasenöhrl, S., Novák, J., Vávra, I., Kučera, M., Hudek, P., : InGaP/GaAs/ InGaP quantum well OMVPE growth on pre-patterned GaAs substrates. In: EW MOVPE VIII. Eds. V.Gregor and K.Závěta. Praha: Inst. Phys. ASCR 1999. P. 135-138.

 

Pinčík, E., Jergel, M., Kučera, M., Brunel, M., Čičmanec, P., Šmatko, V., : Modification of the high-doped GaAs surface region bv its exposure to 150 keV proton beam Nuclear Instr. Methods in Phys. Research B 149 (1999) 81.

 

Hudek, P., Kicin, S., Novák, J., Hasenöhrl, S., Kučera, M., : MOVPE growth of GaAs/InGaP low-dimensional structures on patterned GaAs substrates. In: ELITECH `99. Eds.: J.Tóbik, R.Redhammer. Bratislava: STU 1999. P. 125-126.

 

Kicin, S., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., Vávra, I., Hudek, P., : Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR Materials Sci Engn. B 65 (1999) 106-110.

 

Pinčík, E., Bartoš, P., Jergel, M., Falcony, C., Bartoš, J., Kučera, M., Kákoš, J., : The metastability of porous silicon/crystalline silicon structure Thin Solid Films 343-344 (1999) 277-280.

 

Pinčík, E., Ivančo, J., Kučera, M., Almeida, J., Jergel, M., Krempasky, M., Margaritondo, G., Brunel, M., : X-ray photoemission and photoreflectance study of Au/ultraithin Si/n-GaAs Schottky contacts and hydrogen plasma treated semi-insulating GaAs surfaces Thin Solid Films 343-344 (1999) 328-331.

 

  • 1998
Cambel, V., Olejníková, B., Eliáš, P., Kúdela, R., Novák, J., Kučera, M., : Microscopic 2DEG linear Hall probe arrays Superlattice Microstruct. 24 (1998) 181.

 

Hasenöhrl, S., Kučera, M., Novák, J., Bujdák, M., Eliáš, P., Kúdela, R., : MOCVD growth of InxGa1-xAs/GaAs multiple quantum well and superlattice structures for optical modulators Solid State Electron. 42 (1998) 263.

 

Kúdela, R., Olejníková, B., Kučera, M., Hasenöhrl, S., : MOVPE growth of InGaP/GaAs interfaces. In: HEAD 97. Eds. P. Kordoš et al. NATO ASI Ser. 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 123.

 

Kicin, S., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., Hudek, P., : Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 203.

 

Novák, J., Hasenöhrl, S., Cambel, V., Kúdela, R., Kučera, M., : Resistivity anisotropy in ordered InGaP grown at 640C. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 23.

 

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., : Resistivity anisotrophy in ordered InGaP grown at 640 C Applied Phys. Lett. 73 (1998) 369.

 

Novák, J., Hasenöhrl, S., Kučera, M., Hjelt, K., Tuomi, T., : Sulphur doping of GaSb grown by atmospheric pressure MOVPE J. Crystal Growth 183 (1998) 69.

 

Kúdela, R., Eliáš, P., Kučera, M., Bonsch, P., Wullner, D., Fehly, D., Wehmann, H., Schlachetzki, A., : UV detectors based on InGaP. In: HEAD 97. Eds. P.Kordoš and J.Novák. Dordrecht: Kluwer Acad. Pub 1998. P. 231.

 

  • 1997
Novák, J., Kučera, M., Morvic, M., Betko, J., Förster, A., Kordoš, P., : Characterization of low-temperature GaAs by galvanomagnetic and photoluminiscence measurements Mater. Sci Engn. B 44 (1997) 341.

 

Pinčík, E., Jergel, M., Kučera, M., Brunel, M., : The influence of the inductively-coupled hydrogen plasma on the GaAs surface properties Thin Solid Films 299 (1997) 136H.

 

Kúdela, R., Novák, J., Kučera, M., : Zn-doped InGaP grown by the LP-MOCVD J. Electron. Mater. 25 (1997) 7.

 

  • 1996
Pinčík, E., Kučera, M., Brunel, M., Jergel, M., Čičmanec, P., Krempasky, M., Sekáčová, M., Kákoš, J., : A comparison of the GaAs surface modifications after the interactions with proton high energy beam and hydrogen inductively coupled plasma. In: ASDAM 96. Ed. T.Lalinský et al. Bratislava: IEE SAS 1996. P. 97.

 

Kúdela, R., Vávra, I., Novák, J., Kučera, M., : Dependence of properties of LP MOCVD InGaP layers on growth conditions. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 29.

 

Malacký, L., Kuzmík, J., Mozolová, Ž., Kučera, M., Lubke, K., Wehmann, H., : InGaAs/GaAs pseudomorphic double delta dopes Hemts. Some limitations of design. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 277.

 

Hasenöhrl, S., Kučera, M., Novák, J., Bujdák, M., Kúdela, R., : MOCVD growth of InxGa1-xAs/GaAs multiple quantum welland superlattice structures for quantum modulators. In: ASDAM 96. Ed. T.Lalinský et al. Bratislava: IEE SAS 1996. P. 149.

 

Novák, J., Kučera, M., Lauer, S., Benz, K., : Photoluminiscence characterization of sulphur-doped GaSb grown by liquid phase electroepitaxy J. Crystal Growth 158 (1996) 1-5.

 

Pinčík, E., Gmucová, K., Bartoš, J., Kučera, M., Jergel, M., Brunner, K., : Plasma anodic oxidation of semiinsulating GaAs Applied Surface Sci 93 (1996) 119-130.

 

  • 1994
Morvic, M., Kučera, M., : Photoreflectance as a method for determination of InxGa1-x composition, Elektrotechn. časopis 45 (1994) 249.