2019

Brndiarová, J., Šiffalovič, P., Hulman, M., Kalosi, A., Bodik, M., Skákalová, V., Micusik, M., Markovič, Z., Majková, E., and Fröhlich, K.:  Functionalized graphene transistor for ultrasensitive detection of carbon quantum dots, J. Applied Phys. 126 (2019) 214303. (APVV 15-0641, 15-0693, VEGA 2/0136/18)

Búran, M., Vojenčiak, M., Mošať, M., Ghabeli, A., Solovyov, M., Pekarčíková, M., Kopera, Ľ., and Gömöry, F.: Impact of a REBCO coated conductor stabilization layer on the fault current limiting functionality, Supercond. Sci Technol. 32 (2019) 095008. (HORIZON2020 FASTGRID, SASPRO 0061/01/01, VEGA 2/0097/18, 1/0151/17)

Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M.-P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J.jr., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., and Kuzmík, J.: Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD, J. Applied Phys. 125 (2019) 105304. (APVV 15-0031)

Chauhan, P., Hasenöhrl, S., Dobročka, E., Vančo Ľ., Stoklas, R., Kováč, J., Šiffalovič, P., and Kuzmík, J.: Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer, Applied Surface Sci 470 (2019) 1-7. (APVV 15-0031)

Nishida, A., Taka, C., and Chromik, Š.: Scaling analyses on the critical current density in MgB2/SiC/Si thin film processed at higher temperature, IOP Conf. Ser.: Mater. Sci. Engn. 502 (2019) 012184.

Kolenčík, M., Ernst, D., Komár, M., Urík, M., Šebesta, M., Dobročka, E., Černý, I., Illa, R., Kanike, R., Qian, Y., Feng, H., Orlová, D., and Kratošová, G.: Effect of foliar spray application of zinc oxide nanoparticles on quantitative, nutritional, and physiological parameters of foxtail millet (Setaria italica L.) under field conditions, Nanomaterials 9 (2019) 1559.

Vilamová, Z., Konvičková, Z., Mikeš, P., Holišová, V., Mančík, P., Dobročka, E., Kratošová, G., and Seidlerová, J.: Ag-AgCl nanoparticles fixation on electrospun PVA fibres: technological concept and progress, Sci Rep. 9 (2019) 15520.

Branická, E., Ušáková, M., Ušák, E., Šoka, M., and Dobročka, E.: Effect of Eu substitution on magnetic behavior of spinel nickel ferrites, AIP Conf. Proc. 2131 (2019) 020003.

Zajkoska, S.M., Dobročka, E., Hansal, S., Mann, R., Hansal, W.E.G., and Kautek, W.: Tartrate-based electrolyte for electrodeposition of Fe–Sn alloys, Coatings 9 (2019) 313.

Dobročka, E.:  X-ray diffraction analysis of epitaxial layers with depth-dependent composition, Mater. Struct. 26 (2019) 148-150.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Boháček, P., Zaťko, B., Gombia, E., Kováč, J., and Nečas, V.: Role of contacts in metal/semi-insulating GaAs/metal structures: symmetrical geometry, AIP Conf. Proc. 2131 (2019) 020010.  (VEGA 2/0112/17, 2/0152/16)

Dubecký, F., Zaťko, B., Kolesár, V., Kindl, D., Hubík, P., Gombia, E., and Dubecký, M.: Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs, Applied Surface Sci 467-468 (2019) 1219-1225. (VEGA 2/0112/17, 1/0279/16, ITMS 26220220179, 26230120002, 26210120002)

Eliáš, P. and Haščík, Š.: Fabrication of nanocones by RIE on GaP, J. Phys.: Conf. Ser. 1319 (2019) 012017. (APVV 14-0297, 16-0129, VEGA 2/0104/17)

Chymo, F., Fröhlich, K., Kundrata, I., Hušeková, K., Harmatha, L., Racko, J., Breza, J., and Mikolášek, M.: Characterization of MIS photoanode with a thin SiO2 layer for photoelectrochemical water splitting, AIP Conf. Proc. 2131 (2019) 020020. (APVV 17-0169, VEGA 1/0651/16)

Miranda, E., Muñoz-Gorriz, J., Suñé, J., and Fröhlich, K.: SPICE model for the current-voltage characteristic of resistive switching devices including the snapback effect, Microelectron. Engn. 215 (2019) 110998.(APVV 0560-14)

Miranda, E.A. and Fröhlich, K.: Compact modeling of complementary resistive switching devices using memdiodes, IEEE Trans. Electron Devices 66 (2019) 2831-2836. (APVV 0560-14)

Niu, G., Calka, P., Huang, P., Sharath, S.U., Petzold, S., Gloskovskii, A., Fröhlich, K., Zhao, Y., Kang, J., Schubert, M.A., Bärwolf, F., Ren, W., Ye, Z.-G., Perez, E., Wenger, C., Alff, L., and Schroeder, T.: Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy, Mater. Res. Lett. 7 (2019) 117-123.

Hudec, B., Chang, C.-C., Wang, I-T., Fröhlich, K., and Hou, T.-H.: Three-dimensional integration of ReRAMs, Proc. IEEE Conf. Nanotechnol. (2019) 8626351.

Chymo, F., Fröhlich, K., Harmatha, L., Hušeková, K., Ondrejka, P., Kemeny, M.,  Hotový, I., and Mikolášek, M.: Development and characterization of photo-electrochemical MIS structures for hydrogen generation applications. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 103-106. (VEGA 1/0651/16, APVV 17-0169)

Gál, N., Štrbík, V., Gaži, Š. Chromik, Š., and Talacko, M.: Resistance anomalies at superconducting transition in multilayer N/S/F/S/N heterostructures, J. Supercond. Novel Magnet. 32 (2019) 213-217. (APVV 16-0315, VEGA 2/0117/18)

Gömöry, F. and Šouc, J.: AC losses in superconducting fault current limiters. In Superconducting fault current limiters: Innovation for the Electric Grids. Ed. P. Tixador. World Sci Publ. 2019. ISBN 978-981-3272-97-2 P. 45-60.  (EUROTAPES, APVV DO7RP-0003-12, VEGA 1/0162/11)

Gömöry, F., Šouc, J., Adámek, M., Ghabeli, A., Solovyov, M., and Vojenčiak, M.: Impact of critical current fluctuations on the performance of a coated conductor tape, Supercond. Sci Technol. 32 (2019) 124001. (VEGA 1/0151/17, APVV 16-0418)

Tixador, P., Bauer, M., Bruzek, C., Calleja, A., Deutscher, G., Dutoit, B., Gömöry, F., Martini, L., Noe, M., Obradors, X., Pekarcikova, M., and Sirois, F.: Status of the European Union project FASTGRID, IEEE Trans. Applied Supercond. 29 (2019) 5603305. (FASTGRID)

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21. (APVV 15-0031, SAFEMOST, VEGA 2/0012/18)

Hasenöhrl, S., Chauhan, P., Dobročka, E., Stoklas, R., Vančo, Ľ., Veselý, M., Bouazzaoui, F., Chauvat, M.-P., Reterana, P., and Kuzmík, J.: Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures, Applied Phys. Express 12 (2019) 014001. (APVV 15-0031, VEGA 2/0012/18)

Huran, J., Boháček, P., Perný, M., Mikolášek, M., Skuratov, V.A., Kobzev, A.P., Šály, V., and Arbet, J.: Radiation hardness investigation of heterojunction solar cell structures with TCO antireflection films, J. Phys.: Conf. Ser. 1319 (2019) 012016. (APVV 0443-12, VEGA 1/0651/16)

Mikolášek, M., Kemeny, M., Chymo, F., Ondrejka, P., and Huran, J.: Amorphous silicon PEC-PV hybrid structure for photo-electrochemical water splitting, J. Electr. Engn. 70 (2019) 107-111.

Huran, J., Hrubčín, L., Boháček, P., Skuratov, V.A., Kleinová, A., Sasinková, V., Kobzev, A.P., and Kováčová, E.: The effect of Xe ion irradiation on the properties of SiC(P) and SiC(B) film prepared by PECVD technology. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 155-160.(APVV 0443-12, VEGA 1/0651/16)

Huran, J., Balalykin, N.I., Sasinková, V., Nozdrin, M.A., Kováčová, E., Kobzev, A.P., and Kleinová, A.: Raman spectroscopy study of carbon-based very thin films prepared by magnetron sputtering. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 285-288.

Brytavskyi, I., Hušeková, K., Myndrul, V., Pavlenko, M., Coy, E., Zaleski, K., Gregušová, D., Yate, L., Smyntyna, V., and Iatsunskyi, I.: Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers, Applied Surface Sci 471 (2019) 686-693.

Kapolka, M. and Pardo, E.: 3D modelling of macroscopic force-free effects in superconducting thin films and rectangular prisms, Supercond. Sci Technol. 32 (2019) 054001. (SIVVP ITMS 26230120002, VEGA 2/0097/18, APVV 14-0438)

Kopera, L., Kováč, P., Kováč, J., Melišek, T., Hušek, I., and Berek, D.: Small diameter wind and react coil made of anodised Al-sheathed MgB2 wire, Supercond. Sci Technol. 32 (2019) 105003. (APVV 14-0522, 18-15287, VEGA 2/0140/19)

Kováč, P., Bonura, M., Santra, S., Kopera, L., Rosová, A., Senatore, C., and Hušek, I.: Thermal conductivities and thermal runaways of superconducting MgB2 wires stabilized by an Al+Al2O3 sheath, Supercond. Sci Technol. 32 (2019) 115007. (APVV 14-0522, 18-0271, VEGA 2/0140/19)

Santra, S., Grovenor, C.R.M., Speller, S.C., Kováč, P., Kopera, L., and Hušek, I.: Comparison of interfacial and critical current behaviour of Al+Al2O3 sheathed MgB2 wires with Ta and Tidiffusion barriers, J. Alloys Comp. 807 (2019) 151665. (APVV 18-0271)

Kováč, P., Kopera, L., Kováč, J., Melišek, T., Haessler, W., Wang, D., and Ma, Y.: Current densities and strain tolerances of filamentary MgB2 wires made by an internal Mg diffusion process, Supercond. Sci Technol. 32 (2019) 095006. (APVV 14-0522, 18-0271, VEGA 2/0140/19)

Kováč, P., Hušek, I., Rosová, A., Melišek, T., Kováč, J., Kopera, L., Scheiter, J., and Haessler, W.: Strong no-barrier SS sheathed MgB2 composite wire, Physica C 560 (2019) 40-44. (APVV 14-0522, 18-0271, VEGA 2/0140/19)

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119. (APVV 15-0031, H2020 NFFA-Europe no. 654360)

Kundrata, I., Fröhlich, K., Vančo, L., Mičušík, M., and Bachmann, J.: Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films, Beilstein J. Nanotechnol. 10 (2019) 1443-1451. (VEGA 2/0136/18)

Adikimenakis, A., Androulidaki, M., Foundoulaki Salhin, E., Tsagaraki, K., Doundoulakis, G., Kuzmík, J., and Georgakilas, A.: Bandgap, electrical and structural properties of thick InN (0001) films grown under optimal conditions, IOP Conf. Ser.: J. Phys. 1190 (2019) 012010.

An, K., Bhat, V.S., Mruczkiewicz, M., Dubs, C., and Grundler, D.: Optimization of spin-wave propagation with enhanced group velocities by exchange-coupled ferrimagnet-ferromagnet bilayers, Phys. Rev. Applied 11 (2019) 034065. (ERA.Net RUS Plus 177550)

Gruszecki,P., Banerjee, C., Mruczkiewicz, M., Hellwigde, O., Barman, A., and Krawczyk, A.: The influence of the internal domain wall structure on spin wave band structure in periodic magnetic stripe domain patterns, Solid State Phys. 70 (2019) 79-132.

Saha, S., Zelent, M., Finizio, S., Mruczkiewicz, M., Tacchi, S., Suszka, A.K., Wintz, S., Bingham, N.S., Raabe, J., Krawczyk, M., and Heyderman, L.J.: Formation of Néel-type skyrmions in an antidot lattice with perpendicular magnetic anisotropy, Phys. Rev. B 100 (2019) 144435.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., and Novotný, I.: Raman enhancement of Ag nanoparticles. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 23-26. (APVV 14-0297, 16-0129, VEGA 2/0104/17)

Osvald, J.: Simulation of structure parameters’influence on the threshold voltage of normally-off p-GaN/AlGaN/GaN transistors, Phys. Status Solidi a 216 (2019) 1900453. (VEGA 2/0112/17)

Osvald, J.: Threshold voltage dependence of normally-off p-GaN/AlGaN/GaN transistors on structure parameters. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 51-54.(VEGA 2/0112/17)

Pardo, E., Grilli, F., Liu, Y., Wolftädler, S., and Reis, T.: AC loss modeling in superconducting coils and motors with parallel tapes as conductor, IEEE Trans. Applied Supercond. 29 (2019) 5202505. (ASuMED, VEGA 2/0097/18, APVV 14-0438, itms 26230120002, 26210120002)

Fagnard, J.F., Vanderheyden, B., Pardo, E., and Vanderbemden, P.: Magnetic shielding of various geometries of bulk semi-closed superconducting cylinders subjected to axial and transverse fields, Supercond. Sci Technol. 32 (2019) 074007. (VEGA 2/0097/18)

Pohorelec, O., Ťapajna, M., Gregušová, D., Fröhlich, K., and Kuzmík, J.: Investigation of threshold voltage instabilities in MOS-gated InGaN/AlGaN/GaN HEMTs. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 123-126. (APVV 15-0031, VEGA 2/0109/17)

Seiler, E., Gömöry, F., Ries, R., M., and Vojenčiak, M.: Analysis of critical current anisotropy in commercial coated conductors in terms of the maximum entropy approach, Supercond. Sci Technol. 32 (2019) 095004. (SASPRO 1633/03/01, VEGA 2/009718)

Sojková, M., Végso, K., Mrkývkova, N., Hagara, J., Hutár, P., Rosová, A., Čaplovičová, M., Ludacka, U., Skákalová, V., Majková, E., Šiffalovič, P., and Hulman, M.: Tuning the orientation of few-layer MoS2 films using one-zone sulfurization, RSC Adv. 9 (2019) 29645-29651. (APVV 15-0693, 15-0641, 16-0319, 17-0352, 17-0560 VEGA 2/0149/17)

Sojková, M., Šiffalovič, P., Babchenko, O., Vanko, G., Dobročka, E., Hagara, J., Mrkývková, N., Majková, E.,  Ižák, T., Kromka, A., and Hulman, M.: Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond, Sci Rep. 9 (2019) 2001. (APVV 15-0693, 15-0641, 16-0319, 17-0352, VEGA 2/0149/17, P108/12/G108, SASPRO 0068/01/01)

Sojková, M., Šiffalovič, P., Babchenko, O., Vanko, G., Dobročka, E., Hagara, J., Mrkývková, N., Majková, E., Ižák, T., Kromka, A., and Hulman, M.: Carbide-free one-zone sulfurization method grown thin MOS2 layers on polycrystalline CVD diamond. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 281-284. (APVV 15-0693, 17-0352, VEGA 2/0149/17)

Insinga, A., Solovyov, M., Usoskin, A., Rutt, A., Betz, U., Lundeman, J.H., Abrahamsen, A.B., Grivel, J.-C., Gömöry, F., and Wulff, A.C.: Lift-factor analysis of multifilamentary coated conductor produced using two level undercut-profile substrates, IEEE Trans. Applied Supercond. 29 (2019) 8200704.

Solovyov, M. and Gömöry, F.: A–V formulation for numerical modelling of superconductor magnetization in true 3D geometry, Supercond. Sci Technol. 32 (2019) 115001. (APVV 15-0257, 16-0418, VEGA 1/015117)

Šouc, J., Gömöry, F., Solovyov, M., Vojenčiak, M., Kujovič, T., Seiler, E., Kováč, J., Frolek, L., Behúlová, M., Janovec, J., Cuninková, E., Mišík, J., Pekarčíková, M., and Skarba, M.: CORC-like cable production and characterization of the solenoid made from it, Supercond. Sci Technol. 32 (2019) 035007.  (APVV 14-0438)

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361. (APVV 15-0031, VEGA 2/0109/17)

Ťapajna, M., Egyenes-Pörsök, F., Hasenöhrl, S., Blaho, M., Pohorelec, O., Vincze, A., Muška, M., Noga, P., and Gregušová, D.: Investigation of GaN P-N junction processed by Mg ion implantation. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 43-46. (VEGA 2/0109/17, ITMS 26220220179)

Zehetner, J., Vanko, G., and Kasemann, S.: Femtosecond laser ablation supported fabrication of surface structures for sensor and fluidic devices. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 259-262.

Šebesta, M., Kolenčík, M., Urík, M., Bujdoš, M., Vávra, I., Dobročka, E., Smilek, J., Kalina, M., Diviš, P., Pavúk, M., Miglierini, M., Kratošová, G., and Matúš, P.: Increased colloidal stability and decreased solubility-sol-gel synthesis of zinc oxide nanoparticles with humanic acids, J. Nanosci Nanotechnol. 19 (2019) 3024-3030.

Zápražný, Z., Korytár, D., Jergel, M., Halahovets, Y., Kotlár, M., Maťko, I., Hagara, J., Šiffalovič, P., Keckes, J., and Majková, E.: Characterization of the chips generated by the nanomachining of germanium for X-ray crystal optics, Inter. J. Adv. Manufactur. Technol. 102 (2019) 2757-2767. (ITMS 26220220170, APVV 14-0745, VEGA 2/0092/18)

Zápražný, Z., Korytár, D., Jergel, M., Halahovets, Y., Maťko, I., Šiffalovič, P., Kečkéš, J., Mikulík, P., Majková, E., and Thi, T.N.T.: Study of surface quality and subsurface damage of germanium optics produced by single point diamond nanomachining, Proc. SPIE 11032 (2019)11032E. ( ITMS 26220220170, APVV-14-0745, VEGA-2/0092/18).

Nádaždy, P., Hagara, J., Jergel, M., Majková, E., Mikulík, P., Zápražný, Z., Korytár, D., and Šiffalovič, P.: Exploiting the potential of beam-compressing channel-cut monochromators for laboratory high-resolution small-angle X-ray scattering experiments, J. Applied Crystall. 52 (2019) 498-506.  (ITMS 26220220170, APVV 14-0745, 17-0352, VEGA 2/0092/18)

Zaťko, B., Hrubčín, L., Boháček, P., Osvald, J., Šagátová, A., Sekáčová, M., Kováčová, E., and Nečas, V.: Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer, AIP Conf. Proc. 2131 (2019) 020054. (VEGA 2/0152/16, 2/0092/18)

 Šagátová, A., Zaťko, B., and Nečas, V.: Influence of holder quality on radiation hardness of SI GaAs detector, AIP Conf. Proc. 2131 (2019) 020038.(VEGA 2/0152/16, 2/0092/18)

Kubanda, D., Zaťko, B., Šagátová, A., Žemlička, J., Zápražný, Z., Boháček, P., Dudák, J., Kováčová, E., and Nečas, V.: Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera, J. Instrument. 14 (2019) C01023. (VEGA 2/0152/16, 2/0092/18, APVV 0745-14, ITMS 26220220170)