2021

Bublikov, K., Tóbik, J., Sadovnikov, A.V., and Mruczkiewicz, M.: Vortex gyrotropic mode in curved nanodots, J. Magnetism Magnetic Mater. 537 (2021) 168105. (ERDF 313021T081 – CEMEA, APVV 16-0068, 19-0311(RSWFA), Era.Net RUS Plus (TSMFA), VEGA 2/0150/18)

Marcin, M., Pribulová, Z., Kačmarčík, J., Medvecká, Z., Klein, T., Verchenko, V.Yu., Cambel, V., Šoltýs, J., and Samuely, P.: One or two gaps in Mo8Ga41 superconductor? Local Hall-probe magnetometry study, Supercond. Sci Technol. 34 (2021) 035017.

Dobročka, E., Španková, M., Sojková, M., and Chromik, Š.: Texture of YBCO layer grown on GaN/c-sapphire substrates, Applied Surface Sci 543 (2021) 148718. (APVV-16-0315, VEGA 2/0092/18)

Petrisková, P., Monfort, O., Satrapinskyy, L., Dobročka, E., Plecenik, T., Plesch, G., Papšík, R., Bermejo, R., and Lenčéš, Z.: Preparation and photocatalytic activity of TiO2 nanotube arrays prepared on transparent spinel substrate, Ceramics Inter. 47 (2021) 12970–12980. (VEGA 1/0712/18, 2/0164/18, APVV-14-0385)

Ábel, M., Záchenská, J., Dobročka, E., and Zemanová, M.: Electrocatalytic properties of pulse plated Ni-W alloy coatings in alkaline electrolytes, Trans. IMF 99 (2021) 23-28.

Egyenes-Pörsök, F., Hušeková, K., Dobročka, E., Gucmann, F., and Ťapajna, M.: Optimization of Ohmic contact formation for αlpha-Ga2O3 epitaxial layers grown by MOCVD. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 91-94.

Chymo, F., Fröhlich, K., Hušeková, K., Weis, M., and Mikolášek, M.: Characterization of MIS photoanodes with thin Pt layer for water splitting applications. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 207-210.

Ghabeli, A., Ainslie, M., Pardo, E., Queval, L., and Mataira, R.: Modeling the charging process of a coil by an HTS dynamo-type flux pump, Supercond. Sci Technol. 34 (2021) 084002. ( APVV 19-0536, VEGA  2/0097/18).

Ghabeli, A., Pardo, E., and Kapolka, M.: 3D modeling of a superconducting dynamo-type flux pump, Sci Rep. 11 (2021) 10296. (APVV 19-0536, VEGA 2/0097/18)

Gömöry, F. and Šouc, J.: Stability of DC transport in HTS conductor with local critical current reduction, Supercond. Sci Technol. 34 (2021) 025005.  (FASTGRID, VEGA 1/0151/17, APVV-16-0418)

Gregušová, D., Dobročka, E., Eliáš, P., Stoklas, R., Blaho, M., Pohorelec, O., Haščík, Š., Kučera, M., and Kúdela, R.: GaAs nanomembranes in the high electron mobility transistor technology, Materials 14 (2021) 3461. ( APVV-15-0243, VEGA 2/0068/21)

Asubar, J.T., Yatabe, Z., Gregušová, D., and Hashizume, T.: Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation, J. Applied Phys. 129 (2021) 121102.

Gucmann, F., Kučera, M., Hasenőhrl, S., Eliáš, P., Rosová, A., Dobročka, E., Stoklas, R., and Kuzmík, J.: InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures, Semicond. Sci Technol. 36 (2021) 075025. (VEGA 2/0012/18, APVV 15-0031)

Šimkovic, I., Gucmann, F., Mendichi, R., Schieroni, A.G., Piovani, D., Dobročka, E., and Hricovíni, M.: Extraction and characterization of polysaccharide films prepared from Furcellaria lumbricalis and Gigartina skottsbergii seaweeds, Cellulose 28 (2021) 9567–9588. (VEGA 2/0022/18, 2/0100/21)

Gucmann, F., Hušeková, K., Dobročka, E., Nádaždy, P., Egyenes-Pörsök, F., and Ťapajna, M.: Growth and properties of ε-Ga2O3 on sapphire substrates. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 63-66.

Hrdá, J., Tašková, V., Vojteková, T., Pribusová Slušná, L., Dobročka, E., Píš, I., Bondino, F., Hulman, M., and Sojková, M.: Tuning the charge carrier mobility in few-layer PtSe2 films by Se: Pt ratio, RSC Adv. 11 (2021) 27292. (APVV 17-0352, 17-0560, 19-0365, VEGA 2/0059/21, CEMEA ITMS 313021T081)

Hrdá, J., Tašková, V., Vojteková, T., Pribusová Slušná, L., Dobročka, E., Píš, I.. Bondino, F., Hulman, M., and Sojková, M.: Selenium content influences the charge carrier mobility in few-layer PtSe2 films. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 103-106.

Perný, M., Šály, V., Ďurman, V., Packa, J., Kurcz, J., Mikolášek, M., and Huran, J.: Electrical response of silicon heterojunction solar cells with transparent  conductive oxide antireflective coating, Acta Phys. Polonica A 139 (2021) 39-45. (APVV-19-0049, 17-0169, VEGA 1/0529/20)

Huran, J., Balalykin, N.I., Skrypnik, A.P., Sasinková, V., Nozdrin, M.A., Kováčová, E., and Shirkov, G.D.: Electron beam-plasma vacuum deposition of very thin carbon films on quartz. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 13-16.

Bareli, G., Chromik, Š., Camerlingo, C., Talacko, M., Rosová, A., Španková, M., Štrbik, V., Sojková, M., and Jung, G.: Substrate influence on low energy electron beam processing of YBa2Cu3O7−δ thin films, Applied Surface Sci 535 (2021) 147624. (APVV 16-0315, VEGA 2/0117/18)

Izsák, T., Vanko, G., Babchenko, O., Vincze, A., Vojs, M., Zaťko,  B., and Kromka, A.: Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements, Mater. Sci Engn. B 273 (2021) 115434. (APVV 18-0243, 18-0273, VEGA 2/0084/20).

Kočí, M., Izsák, T., Vanko, G., Sojková, M., Husák, M., and Kromka, A.: Development and measurement of gas sensors based on diamond and transition metal. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 115-118.

Potocký, Š., Izsák, T., Varga, M., Bae, S., Lee, S., Joh, H.I., Lee, D.S., and Kromka, A.: Diamond films and structures grown from polyacrylonitrile composites. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 231-234.

Procházka, V., Krátká, M., Izsák, T, Rezek, B., and Kromka, A.: Diamond based solution-gated transistors for biosensor use. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 1-4.

Mikulics, M., Kordoš, P., Gregušová, D., Sofer, Z., Winden, A., Trellenkamp, St., Moers, J., Mayer, J., and Hardtdegen, H.: Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement, Applied Phys. Lett. 118 (2021) 04310.

Mikulics, M., Kordoš, P., Gregušová, D., Gaži, Š., Novák, J., Sofer, Z., Mayer, J., and Hardtdegen, H.: Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer, Sci Technol. 36 (2021) 095040. (VEGA 2/0068/21, APVV-16-0129)

Kováč, J., Kapolka, M., Kováč, P., Kopera, L., Pardo, E.,  Zhu, Y.C., Yao, C., and Ma, Y.: Magnetization AC losses of iron-based Ba-122 superconducting tapes, Cryogenics 116 (2021) 103281. ( VEGA 2/0140/19, APVV-18-0271).

Li, S., Kováč, J., and Pardo, E.: Dependence of resistance and number of tapes on the coupling AC loss of soldered REBCO stacks, IEEE Trans. Applied Supercond. 31 (2021) 5901405.

Kováč, P., Hušek, I., Hain, M., Kopera, L., Melišek, T., and Berek, D.: Longitudinal uniformity of MgB2 wires made by an internal magnesium diffusion process, Supercond. Sci Technol. 34 (2021) 095007. ( APVV 18-15287, VEGA 2/0140/19)

Kováč, P., Kováč, J., Perez, N., Scheiter, J., Búran, M., Kopera, L., Hušek, I., Melišek, T., and Berek, D.: Low‐purity Cu and Al sheathed multi‐core MgB2 wires made by IMD process, Supercond. Sci Technol. 34 (2021) 075010.

Kováč, P., Hušek, I., Melišek, T., Rosová, A., and Dobročka, E.: Effect of grain size selection in ex-situ made MgB2 wires, Physica C 583 (2021) 1353826. (VEGA 2/0140/19)

Šagátová, A., Kováčová, E., Novák, A., Fulöp, M., and Zaťko, B.: Current-voltage characterization of GaAs detectors and their holders irradiated by high-energy electrons, Applied Surface Sci 552 (2021) 149474. ( APVV-18-0273, 18-0243, VEGA 2/0084/20)

Škriniarová, J., Hronec, P., Chlpík, J., Laurenčíková, A., Kováč, J.jr., Novák, J., and Andok, R.: Investigation of volume fraction of GaP nanowires by SEM characterization and spectroscopic ellipsometry, Optik 234 (2021) 166572. (APVV 16-0129-17, VEGA 2/0119/18)

Mošať, M., Šouc, J., Vojenčiak, M., Solovyov, M., Búran, M., and Gömöry, F.: Influence of current change rate during DC current limitation on the coated conductor degradation, IEEE Trans. Applied Supercond. 31 (2021) 5601905. (FastGrid)

Mošková, A., Moško, M., Precner, M., Mikolášek, M., Rosová, A., Mičušík, M., Štrbík, V., Šoltýs, J., Gucmann, F., Dobročka, E., and Fröhlich, K.: Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition, J. Applied Phys. 130 (2021) 035106. (APVV 17-0169, VEGA 2/0136/18, 02/0010/18, 2/0131/19, ERDF 313021T081)

Szulc, K., Mendisch, S., Mruczkiewicz, M., Casoli, F., Becherer, M., and Gubbiotti, G.: Nonreciprocal spin-wave dynamics in Pt/Co/W/Co/Pt multilayers, Phys. Rev. B 103 (2021) 134404. ( APVV 16-0068-NanoSky, APVV-19-0311-RSWFA, ERDF 313021T081)

Grachev, A.A., Matveev, O.V., Mruczkiewicz, M., Morozova, M.A., Beginin, E. N., Sheshukova, S.E., and Sadovnikov, A.V.: Strain-mediated tunability of spin-wave spectra in the adjacent magnonic crystal stripes with piezoelectric layer, Applied Phys. Lett. 118 (2021) 262405. (ITMS 313021T081)

Bruncko, J., Kováč, J., Michalka, M., Netrvalová, M., Kováč, J., Vincze, A., and Novák, J.: Electrical and optical properties of thin ZnO shell layers on GaP nanorods grown by pulsed laser deposition, Thin Solid Films 725 (2021) 138634. (VEGA 1/0714/18, APVV 16-0129)

Pudiš, D., Urbancová, P., Novák, J., Kuzma, A., Lettrichová, I., Goraus, M., Eliáš, P., Laurenčíková, A., Jandura, D., Šušlik, Ľ., and Hasenöhrl, S.: Near-field analysis of GaP nanocones, Applied Surface Sci 539 (2021) 148213. (VEGA 1/0540/18, 1/0069/19, APVV 16-0129, 18-0550)

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., and Kováč, J.Jr.: Influence of edge rich surface on growth of MoS2 from thin molybdenum layer. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 5-8.

Osvald, J.: Vertical current transport in p-GaN/AlGaN/GaN structures. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 29-32.

Grilli, F., Pardo, E., Morandi, A., Gömöry, F., Solovyov, M., Zermono, V.M.R., Brambilla, R., Benkel, T., and Riva, N.: Electromagnetic modeling of superconductors with commercial software: possibilities with two vector potential-based formulations, IEEE Trans. Applied Supercond. 31 (2021) 5900109.

Ainslie, M., Grilli, F., Queval, L., Pardo, E., Perez-Mendez, F., Mataira, R., Morandi, A., Ghabeli, A., Bumby, C., and Brambilla, R.: A new benchmark problem for electromagnetic modelling of superconductors: the high-Tc superconducting dynamo (2020 Supercond. Sci. Technol. 33 105009) , Supercond. Sci Technol. 34 (2021) 029502.

Pohorelec, O., Gregušová, D., Hasenöhrl, S., Dobročka, E., Stoklas, R., Vančo, L., Gregor, M., and Kuzmík, J.: Mg doping of InAlN layers. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 147-150.

Kozak,A., Precner, M., Hutár, P., Bodík, M., Vegso, K., Halahovets, Y., Hulman, M., Siffalovic, P., and Ťapajna, M.: Angular dependence of nanofriction of mono- and few-layer MoSe2, Applied Surface Sci 567 (2021) 150807. (CEMEA SAS, ITMS 313021 T081, APVV-17- 0560, SK-CN-RD-18-0006, 17-0352, 19-0465, 19- 0365, VEGA 2/0131/19).

Ries, R., Seiler, E., Gömöry, F., Medvids, A., Onufrijevs, P., Pira, C., Chyhyrynets, E.,  Malyshev, O.B., and Valizadeh, R.: Improvement of the first flux entry field by laser post-treatment of the thin Nb film on Cu, Supercond. Sci Technol. 34 (2021) 065001. (H2020  730871 ARIES, VEGA 2/0097/18).

Rosová, A., Maťko, I., and Dobročka, E.: BaZrO3 dopant interactions during MgB2 wire formation by modifed internal magnesium difusion process, Applied Phys. A 127 (2021) 152. (APVV18-0271, VEGA 2/0140/19)

Rýger, I., Lobotka, P., Steiger, A., Chromik, Š., Lalinský, T., Raida, Z., Pítra, K., Zehetner, J., Španková, M., Gaži, Š., Sojková, M., and Vanko, G.: Uncooled antenna-coupled microbolometer for detection of terahertz radiation, J. Infrared, Millimet., Terahertz Waves 42 (2021) 462–478. ( APVV 14-0613, 0450-10, 0455-12).

Leith, S., Vogel, M., Fan, J., Seiler, E., Ries, R., and Jiang, X.: Superconducting NbN thin films for use in superconducting radio frequency cavities, Supercond. Sci Technol. 34 (2021) 025006. (Horizon2020 ARIES)

Sojková, M., Hrdá, J., Volkov, S., Vegso, K., Shaji, A., Vojteková, T., Pribusová Slušná, L., Gál, N., Dobročka, E., Šiffalovič, P., Roch, T., Gregor, M., and Hulman, M.: Growth of PtSe2 few-layer films on NbN superconducting substrate, Applied Phys. Lett. 119 (2021) 013101. ( APVV 15-0693, 17-0352, 297, 17-0560, 19-0365, VEGA 2/0149/17, 2/0059/21, CEMEA ERDF ITMS 313021T081)

Bodík, M., Sojková, M., Hulman, M., Ťapajna, M., Truchlý, M., Vegso, K., Jergel, M., Majková, E., Španková, M., and Šiffalovič, P.: Friction control by engineering the crystallographic orientation of the lubricating few-layer MoS2 films, Applied Surface Sci 540 (2021) 148328. (APVV-15-0693, 17-0352, 17-0560, SK-CN-RD-18-0006, 14-0745, VEGA 2/0149/17, 2/0092/18)

Sojková, M., Dobročka, E., Hutár, P., Tašková, V., Pribusová Slušná, L., Stoklas, R., Píš, I., Bondino, F., Munnik, F., and Hulman, M.: High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization, Applied Surface Sci 538 (2021) 147936.

Hotový, I., Spiess, L., Mikolášek, M., Kostič, I., Sojková, M., Romanus, H., Hulman, M., Buc, D., and Řeháček, V.: Layered WS2 thin films prepared by sulfurization of sputtered W films, Applied Surface Sci 544 (2021) 148719. (VEGA 1/0529/20, APVV-16-0266, 17-0169)

Huss-Hansen, M.K., Hodas, M., Mrkývkova, N., Hagara, J., Nádaždy, P., Sojková, M., Høegh, S.O., Vlad, A., Pandit, P., Majková, E., Šiffalovič, P., Schreiber, F., Kjelstrup-Hansen, J., and Knaapila, M.: Early-stage growth observations of orientation-controlled vacuum-deposited naphthyl end-capped oligothiophenes, Phys. Rev. Mater. 5 (2021) 053402. (APVV 17-
0352, CEMEA ITMS No. 313021T081)

Shaji, A., Vegso, K., Sojková, M., Hulman, M., Nádaždy, P., Hutár, P., Pribusová Slušná, L., Hrdá, J., Bodik, M., Hodas, M., Bernstorff, S., Jergel, M., Majková, E., Schreiber, F., and Šiffalovič, P.: Orientation of few-layer MoS2 films: in-situ x-ray scattering study during sulfurization, J. Phys. Chem. C 125 (2021) 9461–9468.

Mrkývkova, N., Cernescu, A., Futera, Z., Nebojsa, A., Dubroka, A., Sojková, M., Hulman, M., Majková, E., Jergel, M., Šiffalovič, P., and Schreiber, F.: Nanoimaging of orientational defects in semiconducting organic films, J. Phys. Chem. C 125 (2021) 9229–9235.

Sojková, M., Hrdá, J., Volkov, S., Végso, K., Shaji, A., Vojteková, T., Pribusová Slušná, L., Gál, N.,  Dobročka, E., Šiffalovič, P., Roch, T., Gregor, M., and Hulman, M.: PtSe2 few-layer films grown on NbN superconducting substrate. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 9-12.

Solovyov, M., Šouc, J., Kucharovič, M., and Gömöry, F.: Design of magnetic cloak for alternating magnetic field with multilayer ReBCO insert, IEEE Trans. Applied Supercond. 31 (2021) 4901205. (APVV 15–0257, 16–0418, VEGA  2/0097/18)

Stoklas, R., Chvála,, Šichman, P., Hasenöhrl, S., Haščík, Š., Priesol, J., Šatka, A., and Kuzmík, J.: Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: role of deep levels, IEEE Trans. Electron Dev. 68 (2021) 2365. (APVV-18-0054, VEGA 2/0012/18, 2/0114/19).

Šichman, P., Haščík, Š., Gregušová, D., Hasenöhrl, S., and Kuzmík, J.: Optimalization of SiCl4 – based reactive ion etching and nickel hard mask for GaN on GaN vertical structures. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 163-166.

Kityk, A., Protsenko, V., Danilov, F.I., Pavlík, V, Hnatko, M, and Šoltýs, J.:  Enhancement of the surface characteristics of Ti-based biomedical alloy by electropolishing in environmentally friendly deep eutectic solvent (Ethaline), Colloids Surfaces A 613 (2021) 126125.

Utschick, C., Som, C., Šouc, J., Grosse, V., Gömöry, F., and Gross, R.: Superconducting wireless power transfer beyond 5 kW at high power density for industrial applications and fast battery charging, IEEE Trans. Applied Supercond. 31 (2021) 5500110.

Španková, M., Sojková, M., Dobročka, E., Hutár, P., Bodík, M., Munnik, F., Hulman, M., and Chromik, Š.: Influence of precursor thin-film quality on the structural properties of large-area MoS2 films grown by sulfurization of MoO3 on c-sapphire, Applied Surface Sci 540 (2021) 148240. (APVV-19-0365, VEGA 2/0117/18, 2/0149/17, ITMS 313021)

Choukourov, A., Nikitin, D., Pleskunov, P., Tafiichuk, R., Biliak, K., Protsak, M., Kishenina, K., Hanuš, J., Dopita, M., Cieslar, M., Popelář, T., Ondič, L., and Varga, M.: Residual- and linker-free metal/polymer nanofluids prepared by direct deposition of magnetron-sputtered Cu nanoparticles into liquid PEG, J. Molecul. Liquids 336 (2021) 116319.

Vetrova, Iu.V., Zelent, M., Šoltýs, J., Gubanov, V.A., Sadovnikov, A.V., Ščepka, T., Dérer, J., Stoklas, R., Cambel, V., and Mruczkiewicz, M.: Investigation of self-nucleated skyrmion states in the ferromagnetic/nonmagnetic multilayer dot, Applied Phys. Lett. 118 (2021) 212409. (ITMS 313021T081,  APVV-16-0068, 19-0311(RSWFA), VEGA 2/0160/19)

Zelent, M., Vetrova, Iu.V., Li, X., Zhou, Y., Šoltýs, J., Gubanov, V.A., Sadovnikov, A.V., Ščepka, T., Dérer, J., Stoklas, R., Cambel, V., and Mruczkiewicz, M.: Skyrmion formation in nanodisks using magnetic force microscopy tip, Nanomater. 11 (2021) 2627. (ERDF 313021T081, APVV 19-0311(RSWFA)), ERA.Net RUS Plus (TSMFA), VEGA 2/0160/19)

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Kováčová, E., Halahovets, Y., Rozov, S.V., and Sandukovskij, V.G.: Study of Schottky barrier detectors based on high quality 4H-SiC epitaxial layer with different thickness, Applied Surface Sci 536 (2021) 147801. (APVV 18-0243, 18-0273, VEGA 2/0084/20, 2/0092/18)

Zápražný, Z., Zaťko, B., Korytár, D., Gál,, Jergel, M., Halahovets, Y., and Ferrari, C.: Testing of thickness homogeneity of Si crystal membranes using GaAs Timepix detector,  J. Instrument. 16 (2021) P06015. (APVV 18-0243, 18-0273, VEGA 2/0041/21, 2/0084/20,  ERDF ITMS2014+: 313011W085, ITMS 26220220170)